CN101853760B - 电子源基板 - Google Patents
电子源基板 Download PDFInfo
- Publication number
- CN101853760B CN101853760B CN2010101136119A CN201010113611A CN101853760B CN 101853760 B CN101853760 B CN 101853760B CN 2010101136119 A CN2010101136119 A CN 2010101136119A CN 201010113611 A CN201010113611 A CN 201010113611A CN 101853760 B CN101853760 B CN 101853760B
- Authority
- CN
- China
- Prior art keywords
- wiring
- element electrode
- electron
- conductive membrane
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 95
- 239000012528 membrane Substances 0.000 claims description 82
- 238000009792 diffusion process Methods 0.000 abstract description 61
- 239000000203 mixture Substances 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 44
- 229910052708 sodium Inorganic materials 0.000 description 37
- 239000011734 sodium Substances 0.000 description 37
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 36
- 239000000463 material Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 30
- 238000012545 processing Methods 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- 239000011159 matrix material Substances 0.000 description 20
- 239000011521 glass Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 13
- 238000007639 printing Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 239000006071 cream Substances 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000005361 soda-lime glass Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 150000001722 carbon compounds Chemical class 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017399 Au—Ir Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- HBEQXAKJSGXAIQ-UHFFFAOYSA-N oxopalladium Chemical compound [Pd]=O HBEQXAKJSGXAIQ-UHFFFAOYSA-N 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- 229910003445 palladium oxide Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011378 shotcrete Substances 0.000 description 1
- 150000003385 sodium Chemical class 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/92—Means forming part of the tube for the purpose of providing electrical connection to it
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001257176 | 2001-08-28 | ||
| JP257176/2001 | 2001-08-28 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021422109A Division CN1222004C (zh) | 2001-08-28 | 2002-08-23 | 电子源基板及其制造方法和使用该基板的图像形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101853760A CN101853760A (zh) | 2010-10-06 |
| CN101853760B true CN101853760B (zh) | 2011-10-12 |
Family
ID=19084883
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101136119A Expired - Fee Related CN101853760B (zh) | 2001-08-28 | 2002-08-23 | 电子源基板 |
| CN2005100916057A Expired - Fee Related CN1722342B (zh) | 2001-08-28 | 2002-08-23 | 电子源基板和使用该基板的图像形成装置 |
| CNB021422109A Expired - Fee Related CN1222004C (zh) | 2001-08-28 | 2002-08-23 | 电子源基板及其制造方法和使用该基板的图像形成装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005100916057A Expired - Fee Related CN1722342B (zh) | 2001-08-28 | 2002-08-23 | 电子源基板和使用该基板的图像形成装置 |
| CNB021422109A Expired - Fee Related CN1222004C (zh) | 2001-08-28 | 2002-08-23 | 电子源基板及其制造方法和使用该基板的图像形成装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6853128B2 (https=) |
| JP (1) | JP3728281B2 (https=) |
| CN (3) | CN101853760B (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3848341B2 (ja) * | 2004-06-29 | 2006-11-22 | キヤノン株式会社 | 電子放出素子、電子源、画像表示装置、および映像受信表示装置、並びに電子放出素子の製造方法 |
| US7427826B2 (en) * | 2005-01-25 | 2008-09-23 | Canon Kabushiki Kaisha | Electron beam apparatus |
| JP2010009965A (ja) * | 2008-06-27 | 2010-01-14 | Canon Inc | 電子放出素子とその製造方法、電子源及び画像表示装置 |
| JPWO2010001793A1 (ja) * | 2008-06-30 | 2011-12-22 | 国立大学法人東北大学 | ナトリウムを含有するガラス基体を有する電子装置及びその製造方法 |
| JP6584329B2 (ja) * | 2016-01-19 | 2019-10-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1101166A (zh) * | 1992-12-29 | 1995-04-05 | 佳能株式会社 | 电子源和图像形成装置及其驱动方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2654012B2 (ja) | 1987-05-06 | 1997-09-17 | キヤノン株式会社 | 電子放出素子およびその製造方法 |
| JP2654013B2 (ja) | 1987-05-06 | 1997-09-17 | キヤノン株式会社 | 電子放出素子およびその製造方法 |
| US4904895A (en) * | 1987-05-06 | 1990-02-27 | Canon Kabushiki Kaisha | Electron emission device |
| EP0299461B1 (en) * | 1987-07-15 | 1995-05-10 | Canon Kabushiki Kaisha | Electron-emitting device |
| JPH0687392B2 (ja) | 1988-05-02 | 1994-11-02 | キヤノン株式会社 | 電子放出素子の製造方法 |
| US5023110A (en) * | 1988-05-02 | 1991-06-11 | Canon Kabushiki Kaisha | Process for producing electron emission device |
| JP2630983B2 (ja) | 1988-05-02 | 1997-07-16 | キヤノン株式会社 | 電子放出素子 |
| JP2951984B2 (ja) | 1989-12-28 | 1999-09-20 | キヤノン株式会社 | 電子放出素子列及びそれを用いた画像表示装置 |
| JP2967285B2 (ja) | 1990-03-12 | 1999-10-25 | キヤノン株式会社 | 画像形成装置及び電子放出素子列 |
| JP3167072B2 (ja) | 1992-12-29 | 2001-05-14 | キヤノン株式会社 | 画像形成装置 |
| US5455597A (en) * | 1992-12-29 | 1995-10-03 | Canon Kabushiki Kaisha | Image-forming apparatus, and designation of electron beam diameter at image-forming member in image-forming apparatus |
| CA2126509C (en) * | 1993-12-27 | 2000-05-23 | Toshikazu Ohnishi | Electron-emitting device and method of manufacturing the same as well as electron source and image-forming apparatus |
| JP3416266B2 (ja) | 1993-12-28 | 2003-06-16 | キヤノン株式会社 | 電子放出素子とその製造方法、及び該電子放出素子を用いた電子源及び画像形成装置 |
| JP3241251B2 (ja) * | 1994-12-16 | 2001-12-25 | キヤノン株式会社 | 電子放出素子の製造方法及び電子源基板の製造方法 |
| JP3222338B2 (ja) | 1994-12-22 | 2001-10-29 | キヤノン株式会社 | 電子源および画像形成装置の製造方法 |
| JP3260592B2 (ja) | 1995-06-27 | 2002-02-25 | キヤノン株式会社 | 画像形成装置の製造方法及びこの方法により製造された画像形成装置 |
| AU744766B2 (en) * | 1996-10-07 | 2002-03-07 | Canon Kabushiki Kaisha | Image-forming apparatus and method of driving the same |
| JP3135118B2 (ja) | 1998-11-18 | 2001-02-13 | キヤノン株式会社 | 電子源形成用基板、電子源及び画像形成装置並びにそれらの製造方法 |
| JP2000243327A (ja) | 1999-02-23 | 2000-09-08 | Canon Inc | 電子源基板及びその製造方法及び電子源基板を用いた画像形成装置 |
| JP3710441B2 (ja) | 2001-09-07 | 2005-10-26 | キヤノン株式会社 | 電子源基板およびそれを用いた表示装置 |
-
2002
- 2002-08-21 JP JP2002240020A patent/JP3728281B2/ja not_active Expired - Lifetime
- 2002-08-23 CN CN2010101136119A patent/CN101853760B/zh not_active Expired - Fee Related
- 2002-08-23 CN CN2005100916057A patent/CN1722342B/zh not_active Expired - Fee Related
- 2002-08-23 CN CNB021422109A patent/CN1222004C/zh not_active Expired - Fee Related
- 2002-08-26 US US10/227,206 patent/US6853128B2/en not_active Ceased
-
2007
- 2007-02-08 US US11/704,906 patent/USRE41086E1/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1101166A (zh) * | 1992-12-29 | 1995-04-05 | 佳能株式会社 | 电子源和图像形成装置及其驱动方法 |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2000-311638A 2000.11.07 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1402290A (zh) | 2003-03-12 |
| CN101853760A (zh) | 2010-10-06 |
| JP2003151475A (ja) | 2003-05-23 |
| CN1222004C (zh) | 2005-10-05 |
| USRE41086E1 (en) | 2010-01-26 |
| CN1722342B (zh) | 2010-06-23 |
| US6853128B2 (en) | 2005-02-08 |
| US20030042843A1 (en) | 2003-03-06 |
| CN1722342A (zh) | 2006-01-18 |
| JP3728281B2 (ja) | 2005-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0769796B1 (en) | Method of manufacturing electron-emitting device | |
| JPH097532A (ja) | 画像形成装置 | |
| JPH0845448A (ja) | 画像形成装置及び該画像形成装置の製造方法 | |
| KR100221161B1 (ko) | 전자원, 그것을 포함하는 화상 형성 장치 및 화상 형성 장치의 구동 방법 | |
| USRE41086E1 (en) | Electron source substrate, production method thereof, and image forming apparatus using electron source substrate | |
| US7095168B2 (en) | Electron source forming substrate, and electron source and image display apparatus using the same | |
| KR100362972B1 (ko) | 전자 방출 소자, 전자원 및 화상 형성 장치의 제조 방법 | |
| JPH0945266A (ja) | 画像形成装置 | |
| JP2001319561A (ja) | 電子源及び画像表示装置 | |
| JP3200270B2 (ja) | 表面伝導型電子放出素子、電子源、及び、画像形成装置の製造方法 | |
| US6604970B1 (en) | Methods for producing electron source, image-forming apparatus, and wiring substrate having a stack of insulating layers; and electron source, image-forming apparatus, and wiring substrate produced using the methods | |
| JPH09283061A (ja) | 画像形成装置およびその製造方法 | |
| JP3450533B2 (ja) | 電子源基板および画像形成装置の製造方法 | |
| JP3387710B2 (ja) | 電子源基板の製造方法および画像形成装置の製造方法 | |
| JP3943864B2 (ja) | 電子源基板及びその製造方法並びに電子源基板を用いた画像形成装置 | |
| JPH09245698A (ja) | 電子放出素子、電子源基板、及び画像形成装置の製造方法 | |
| JP3416377B2 (ja) | 電子放出素子、電子源、表示パネルおよび画像形成装置の製造方法 | |
| JP3459705B2 (ja) | 電子源基板の製造方法、及び画像形成装置の製造方法 | |
| JP2000243230A (ja) | 電子源基板及びその製造方法及び電子源基板を用いた画像形成装置 | |
| JPH0922671A (ja) | 電子源基板および画像形成装置ならびにそれらの製造方法 | |
| JPH09245690A (ja) | マトリクス配線の製造方法、電子源の製造方法、電子源及び該電子源を具備した画像表示装置 | |
| JPH09283064A (ja) | 画像形成装置およびその製造方法 | |
| JPH0945222A (ja) | 電子放出素子、それを用いた電子源、画像形成装置 | |
| JP2004200052A (ja) | 電子デバイス形成用基板の製造方法 | |
| JPH09245622A (ja) | 電子放出素子、電子源基板、及び画像形成装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111012 Termination date: 20120823 |