CN101656218B - 用于生产照相机模块的方法以及相应的基底 - Google Patents

用于生产照相机模块的方法以及相应的基底 Download PDF

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Publication number
CN101656218B
CN101656218B CN2009101706321A CN200910170632A CN101656218B CN 101656218 B CN101656218 B CN 101656218B CN 2009101706321 A CN2009101706321 A CN 2009101706321A CN 200910170632 A CN200910170632 A CN 200910170632A CN 101656218 B CN101656218 B CN 101656218B
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China
Prior art keywords
moldings
integrated circuit
camera integrated
substrate
circuit chips
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Expired - Lifetime
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CN2009101706321A
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Chinese (zh)
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CN101656218A (zh
Inventor
维戴达·S·卡尔
塞缪尔·W·塔姆
上官东恺
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Jiangxi Jinghao Optical Co Ltd
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Flextronics International USA Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Lens Barrels (AREA)
CN2009101706321A 2004-02-20 2005-02-18 用于生产照相机模块的方法以及相应的基底 Expired - Lifetime CN101656218B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/784,102 2004-02-20
US10/784,102 US7872686B2 (en) 2004-02-20 2004-02-20 Integrated lens and chip assembly for a digital camera

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800089902A Division CN101124813A (zh) 2004-02-20 2005-02-18 用于数字照相机的集成透镜和芯片组件

Publications (2)

Publication Number Publication Date
CN101656218A CN101656218A (zh) 2010-02-24
CN101656218B true CN101656218B (zh) 2012-02-08

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CN2009101706321A Expired - Lifetime CN101656218B (zh) 2004-02-20 2005-02-18 用于生产照相机模块的方法以及相应的基底
CNA2005800089902A Pending CN101124813A (zh) 2004-02-20 2005-02-18 用于数字照相机的集成透镜和芯片组件

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CNA2005800089902A Pending CN101124813A (zh) 2004-02-20 2005-02-18 用于数字照相机的集成透镜和芯片组件

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Country Link
US (2) US7872686B2 (https=)
EP (2) EP1726157A4 (https=)
JP (1) JP2007523568A (https=)
CN (2) CN101656218B (https=)
CA (1) CA2556477A1 (https=)
TW (1) TWI258052B (https=)
WO (1) WO2005081853A2 (https=)

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JP2007523568A (ja) 2007-08-16
WO2005081853A2 (en) 2005-09-09
TW200530731A (en) 2005-09-16
US20050185088A1 (en) 2005-08-25
CN101656218A (zh) 2010-02-24
US20110115974A1 (en) 2011-05-19
CN101124813A (zh) 2008-02-13
US7872686B2 (en) 2011-01-18
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EP1726157A4 (en) 2009-01-07
TWI258052B (en) 2006-07-11

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