CN101542696B - 显示装置用Al合金膜、显示装置以及溅射靶材 - Google Patents

显示装置用Al合金膜、显示装置以及溅射靶材 Download PDF

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Publication number
CN101542696B
CN101542696B CN2007800442895A CN200780044289A CN101542696B CN 101542696 B CN101542696 B CN 101542696B CN 2007800442895 A CN2007800442895 A CN 2007800442895A CN 200780044289 A CN200780044289 A CN 200780044289A CN 101542696 B CN101542696 B CN 101542696B
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Prior art keywords
film
alloy
display device
atomic
alloy film
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Chinese (zh)
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CN101542696A (zh
Inventor
后藤裕史
富久胜文
日野绫
奥野博行
中井淳一
川上信之
越智元隆
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Kobe Steel Ltd
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Kobe Steel Ltd
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Priority claimed from PCT/JP2007/072832 external-priority patent/WO2008066030A1/ja
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6729Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6729Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739Conductor-insulator-semiconductor electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743Silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44Conductive materials thereof
    • H10W20/4403Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H10W20/4407Aluminium alloys

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN2007800442895A 2006-11-30 2007-11-27 显示装置用Al合金膜、显示装置以及溅射靶材 Active CN101542696B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP324494/2006 2006-11-30
JP2006324494 2006-11-30
JP2007168298A JP4170367B2 (ja) 2006-11-30 2007-06-26 表示デバイス用Al合金膜、表示デバイス、及びスパッタリングターゲット
JP168298/2007 2007-06-26
PCT/JP2007/072832 WO2008066030A1 (fr) 2006-11-30 2007-11-27 Film d'alliage d'al pour un dispositf d'affichage, dispositf d'affichage, et cible de pulvérisation cathodique

Publications (2)

Publication Number Publication Date
CN101542696A CN101542696A (zh) 2009-09-23
CN101542696B true CN101542696B (zh) 2011-01-26

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Country Status (5)

Country Link
US (1) US8786090B2 (enExample)
JP (1) JP4170367B2 (enExample)
KR (1) KR101085271B1 (enExample)
CN (1) CN101542696B (enExample)
TW (1) TW200830558A (enExample)

Families Citing this family (36)

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JP4117001B2 (ja) 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP4611417B2 (ja) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
JP4469913B2 (ja) 2008-01-16 2010-06-02 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP5231282B2 (ja) * 2008-02-22 2013-07-10 株式会社神戸製鋼所 タッチパネルセンサー
JP2010123754A (ja) * 2008-11-19 2010-06-03 Kobe Steel Ltd 表示装置およびその製造方法
US7932727B2 (en) * 2008-03-31 2011-04-26 Christian Bolle Test structure to monitor the release step in a micromachining process
US20110008640A1 (en) * 2008-03-31 2011-01-13 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Display device, process for producing the display device, and sputtering target
JP5475260B2 (ja) * 2008-04-18 2014-04-16 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
WO2009131169A1 (ja) * 2008-04-23 2009-10-29 株式会社神戸製鋼所 表示装置用Al合金膜、表示装置およびスパッタリングターゲット
WO2010001998A1 (ja) * 2008-07-03 2010-01-07 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるCu合金膜
JP5357515B2 (ja) * 2008-11-05 2013-12-04 株式会社神戸製鋼所 表示装置用Al合金膜、表示装置およびスパッタリングターゲット
US20110198602A1 (en) * 2008-11-05 2011-08-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Aluminum alloy film for display device, display device, and sputtering target
JP2010134458A (ja) * 2008-11-05 2010-06-17 Kobe Steel Ltd 表示装置用Al合金膜、表示装置およびスパッタリングターゲット
JP5368806B2 (ja) * 2009-01-13 2013-12-18 株式会社神戸製鋼所 表示装置用Al合金膜および表示装置
WO2010058825A1 (ja) * 2008-11-20 2010-05-27 株式会社神戸製鋼所 表示装置用Al合金膜、薄膜トランジスタ基板およびその製造方法、並びに表示装置
JP4567091B1 (ja) 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Cu合金膜および表示装置
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101320229B1 (ko) 2009-07-27 2013-10-21 가부시키가이샤 고베 세이코쇼 배선 구조 및 배선 구조를 구비한 표시 장치
CN102473730B (zh) * 2009-07-27 2015-09-16 株式会社神户制钢所 布线构造及其制造方法、以及具备布线构造的显示装置
JP2011035152A (ja) * 2009-07-31 2011-02-17 Kobe Steel Ltd 薄膜トランジスタ基板および表示デバイス
JP2011035153A (ja) * 2009-07-31 2011-02-17 Kobe Steel Ltd 薄膜トランジスタ基板および表示デバイス
CN104681447A (zh) * 2009-09-04 2015-06-03 株式会社半导体能源研究所 半导体器件的制造方法
CN102041479B (zh) * 2009-10-23 2013-08-28 株式会社神户制钢所 Al基合金溅射靶
JP5179604B2 (ja) * 2010-02-16 2013-04-10 株式会社神戸製鋼所 表示装置用Al合金膜
JP2012015200A (ja) * 2010-06-29 2012-01-19 Kobe Steel Ltd 薄膜トランジスタ基板、および薄膜トランジスタ基板を備えた表示デバイス
JP2012180540A (ja) 2011-02-28 2012-09-20 Kobe Steel Ltd 表示装置および半導体装置用Al合金膜
JP5524905B2 (ja) * 2011-05-17 2014-06-18 株式会社神戸製鋼所 パワー半導体素子用Al合金膜
JP2013084907A (ja) 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
US9851593B2 (en) * 2012-09-11 2017-12-26 Apple Inc. LCD frame assembly
US20160345425A1 (en) * 2014-02-07 2016-11-24 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Wiring film for flat panel display
JP2016018948A (ja) * 2014-07-10 2016-02-01 セイコーエプソン株式会社 導電パターン形成方法、半導体装置、及び電子機器
CN106653773B (zh) * 2016-12-30 2019-10-18 惠科股份有限公司 一种显示面板
JP7053290B2 (ja) * 2018-02-05 2022-04-12 株式会社神戸製鋼所 有機elディスプレイ用の反射アノード電極
JP7311290B2 (ja) * 2019-03-27 2023-07-19 Jx金属株式会社 分割スパッタリングターゲット及びその製造方法
JP7231487B2 (ja) 2019-05-30 2023-03-01 株式会社神戸製鋼所 反射アノード電極及びその製造方法、薄膜トランジスタ基板、有機elディスプレイ、並びにスパッタリングターゲット

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Also Published As

Publication number Publication date
JP4170367B2 (ja) 2008-10-22
KR101085271B1 (ko) 2011-11-22
TWI356498B (enExample) 2012-01-11
TW200830558A (en) 2008-07-16
CN101542696A (zh) 2009-09-23
JP2008160058A (ja) 2008-07-10
US8786090B2 (en) 2014-07-22
US20100065847A1 (en) 2010-03-18
KR20090083427A (ko) 2009-08-03

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