KR101085271B1 - 표시 디바이스용 Ａｌ 합금막, 표시 디바이스 및 스퍼터링 타깃 - Google Patents

표시 디바이스용 Ａｌ 합금막, 표시 디바이스 및 스퍼터링 타깃 Download PDF

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KR101085271B1
KR101085271B1 KR1020097011088A KR20097011088A KR101085271B1 KR 101085271 B1 KR101085271 B1 KR 101085271B1 KR 1020097011088 A KR1020097011088 A KR 1020097011088A KR 20097011088 A KR20097011088 A KR 20097011088A KR 101085271 B1 KR101085271 B1 KR 101085271B1
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South Korea
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film
alloy
atomic
alloy film
display device
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Korean (ko)
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KR20090083427A (ko
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히로시 고또오
가쯔후미 도미히사
아야 히노
히로유끼 오꾸노
준이찌 나까이
노부유끼 가와까미
모또따까 오찌
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가부시키가이샤 고베 세이코쇼
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Priority claimed from PCT/JP2007/072832 external-priority patent/WO2008066030A1/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020097011088A 2006-11-30 2007-11-27 표시 디바이스용 Ａｌ 합금막, 표시 디바이스 및 스퍼터링 타깃 Active KR101085271B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2006324494 2006-11-30
JPJP-P-2006-324494 2006-11-30
JP2007168298A JP4170367B2 (ja) 2006-11-30 2007-06-26 表示デバイス用Ａｌ合金膜、表示デバイス、及びスパッタリングターゲット
JPJP-P-2007-168298 2007-06-26
PCT/JP2007/072832 WO2008066030A1 (fr) 2006-11-30 2007-11-27 Film d'alliage d'al pour un dispositf d'affichage, dispositf d'affichage, et cible de pulvérisation cathodique

Publications (2)

Publication Number Publication Date
KR20090083427A KR20090083427A (ko) 2009-08-03
KR101085271B1 true KR101085271B1 (ko) 2011-11-22

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Country Status (5)

Country Link
US (1) US8786090B2 (enExample)
JP (1) JP4170367B2 (enExample)
KR (1) KR101085271B1 (enExample)
CN (1) CN101542696B (enExample)
TW (1) TW200830558A (enExample)

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JP4611417B2 (ja) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
JP4469913B2 (ja) 2008-01-16 2010-06-02 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
KR101163329B1 (ko) * 2008-02-22 2012-07-05 가부시키가이샤 고베 세이코쇼 터치 패널 센서
US7932727B2 (en) * 2008-03-31 2011-04-26 Christian Bolle Test structure to monitor the release step in a micromachining process
TWI434421B (zh) * 2008-03-31 2014-04-11 Kobe Steel Ltd A display device, a manufacturing method thereof, and a sputtering target
JP2010123754A (ja) * 2008-11-19 2010-06-03 Kobe Steel Ltd 表示装置およびその製造方法
JP5475260B2 (ja) * 2008-04-18 2014-04-16 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
KR20100127290A (ko) * 2008-04-23 2010-12-03 가부시키가이샤 고베 세이코쇼 표시 장치용 Ａｌ 합금막, 표시 장치 및 스퍼터링 타깃
US8535997B2 (en) * 2008-07-03 2013-09-17 Kobe Steel, Ltd. Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
JP5368806B2 (ja) * 2009-01-13 2013-12-18 株式会社神戸製鋼所 表示装置用Ａｌ合金膜および表示装置
JP2010134458A (ja) * 2008-11-05 2010-06-17 Kobe Steel Ltd 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
JP5357515B2 (ja) * 2008-11-05 2013-12-04 株式会社神戸製鋼所 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
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JP4567091B1 (ja) 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Ｃｕ合金膜および表示装置
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102473732B (zh) 2009-07-27 2015-09-16 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
TWI445179B (zh) * 2009-07-27 2014-07-11 Kobe Steel Ltd A wiring structure and a manufacturing method thereof, and a display device having a wiring structure
JP2011035153A (ja) * 2009-07-31 2011-02-17 Kobe Steel Ltd 薄膜トランジスタ基板および表示デバイス
JP2011035152A (ja) * 2009-07-31 2011-02-17 Kobe Steel Ltd 薄膜トランジスタ基板および表示デバイス
KR101791812B1 (ko) * 2009-09-04 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
CN102041479B (zh) * 2009-10-23 2013-08-28 株式会社神户制钢所 Al基合金溅射靶
JP5179604B2 (ja) * 2010-02-16 2013-04-10 株式会社神戸製鋼所 表示装置用Ａｌ合金膜
JP2012015200A (ja) * 2010-06-29 2012-01-19 Kobe Steel Ltd 薄膜トランジスタ基板、および薄膜トランジスタ基板を備えた表示デバイス
JP2012180540A (ja) 2011-02-28 2012-09-20 Kobe Steel Ltd 表示装置および半導体装置用Ａｌ合金膜
JP5524905B2 (ja) 2011-05-17 2014-06-18 株式会社神戸製鋼所 パワー半導体素子用Ａｌ合金膜
JP2013084907A (ja) 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
US9851593B2 (en) * 2012-09-11 2017-12-26 Apple Inc. LCD frame assembly
WO2015118947A1 (ja) * 2014-02-07 2015-08-13 株式会社神戸製鋼所 フラットパネルディスプレイ用配線膜
JP2016018948A (ja) * 2014-07-10 2016-02-01 セイコーエプソン株式会社 導電パターン形成方法、半導体装置、及び電子機器
CN106653773B (zh) * 2016-12-30 2019-10-18 惠科股份有限公司 一种显示面板
JP7053290B2 (ja) 2018-02-05 2022-04-12 株式会社神戸製鋼所 有機ｅｌディスプレイ用の反射アノード電極
JP7311290B2 (ja) * 2019-03-27 2023-07-19 Ｊｘ金属株式会社 分割スパッタリングターゲット及びその製造方法
JP7231487B2 (ja) 2019-05-30 2023-03-01 株式会社神戸製鋼所 反射アノード電極及びその製造方法、薄膜トランジスタ基板、有機ｅｌディスプレイ、並びにスパッタリングターゲット

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Patent Citations (1)

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Publication number Publication date
TW200830558A (en) 2008-07-16
JP2008160058A (ja) 2008-07-10
US20100065847A1 (en) 2010-03-18
CN101542696B (zh) 2011-01-26
KR20090083427A (ko) 2009-08-03
CN101542696A (zh) 2009-09-23
US8786090B2 (en) 2014-07-22
TWI356498B (enExample) 2012-01-11
JP4170367B2 (ja) 2008-10-22

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