CN101319172B - 用于基板的洗涤或蚀刻的碱性水溶液组合物 - Google Patents

用于基板的洗涤或蚀刻的碱性水溶液组合物 Download PDF

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Publication number
CN101319172B
CN101319172B CN2008101083129A CN200810108312A CN101319172B CN 101319172 B CN101319172 B CN 101319172B CN 2008101083129 A CN2008101083129 A CN 2008101083129A CN 200810108312 A CN200810108312 A CN 200810108312A CN 101319172 B CN101319172 B CN 101319172B
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CN
China
Prior art keywords
aqueous solution
solution composition
concentration
carbon atoms
washing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008101083129A
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English (en)
Chinese (zh)
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CN101319172A (zh
Inventor
石川典夫
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Kanto Chemical Co Inc
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Kanto Chemical Co Inc
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Publication of CN101319172A publication Critical patent/CN101319172A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075—Cleaning of glass
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
CN2008101083129A 2007-06-06 2008-06-06 用于基板的洗涤或蚀刻的碱性水溶液组合物 Expired - Fee Related CN101319172B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007150353A JP5142592B2 (ja) 2007-06-06 2007-06-06 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物
JP150353/2007 2007-06-06

Publications (2)

Publication Number Publication Date
CN101319172A CN101319172A (zh) 2008-12-10
CN101319172B true CN101319172B (zh) 2012-06-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101083129A Expired - Fee Related CN101319172B (zh) 2007-06-06 2008-06-06 用于基板的洗涤或蚀刻的碱性水溶液组合物

Country Status (5)

Country Link
US (1) US8123976B2 (enExample)
JP (1) JP5142592B2 (enExample)
KR (1) KR101482154B1 (enExample)
CN (1) CN101319172B (enExample)
TW (1) TWI445816B (enExample)

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JP5720573B2 (ja) * 2009-10-02 2015-05-20 三菱瓦斯化学株式会社 シリコンエッチング液およびエッチング方法
US8883701B2 (en) * 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
US9873833B2 (en) 2014-12-29 2018-01-23 Versum Materials Us, Llc Etchant solutions and method of use thereof
CN105154268A (zh) * 2015-08-29 2015-12-16 江西赛维Ldk太阳能高科技有限公司 一种可减少硅片表面损伤层厚度的清洗液及清洗方法
JP6674628B2 (ja) * 2016-04-26 2020-04-01 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
JP6887722B2 (ja) * 2016-10-25 2021-06-16 株式会社ディスコ ウェーハの加工方法及び切削装置
JP7344471B2 (ja) * 2018-04-26 2023-09-14 三菱瓦斯化学株式会社 樹脂組成物、積層体、樹脂組成物層付き半導体ウェハ、樹脂組成物層付き半導体搭載用基板、及び半導体装置
KR102678071B1 (ko) * 2019-01-08 2024-06-24 동우 화인켐 주식회사 실리콘 막 식각액 조성물 및 이를 사용한 패턴 형성 방법
KR102886894B1 (ko) * 2019-03-26 2025-11-17 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물, 그 제조 방법, 표면 처리 방법 및 반도체 기판의 제조 방법
TW202106647A (zh) 2019-05-15 2021-02-16 美商康寧公司 在高溫下用高濃度鹼金屬氫氧化物減少紋理化玻璃、玻璃陶瓷以及陶瓷製品之厚度的方法
CN112480929A (zh) * 2020-10-23 2021-03-12 伯恩光学(惠州)有限公司 一种玻璃减薄剂
DE102020133278A1 (de) * 2020-12-14 2022-06-15 Schott Ag Verfahren zur Herstellung strukturierter Glasartikel durch alkalische Ätzung
CN114686236A (zh) * 2020-12-30 2022-07-01 伯恩光学(惠州)有限公司 一种玻璃手机前盖减薄剂
CN114685056A (zh) * 2020-12-30 2022-07-01 伯恩光学(惠州)有限公司 一种玻璃手机前盖减薄剂
CN114686235A (zh) * 2020-12-30 2022-07-01 伯恩光学(惠州)有限公司 一种玻璃手机后盖减薄剂
CN114686234A (zh) * 2020-12-30 2022-07-01 伯恩光学(惠州)有限公司 一种玻璃手机后盖减薄剂

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Also Published As

Publication number Publication date
US20090001315A1 (en) 2009-01-01
KR20080107306A (ko) 2008-12-10
JP5142592B2 (ja) 2013-02-13
KR101482154B1 (ko) 2015-01-13
TW200907048A (en) 2009-02-16
JP2008305900A (ja) 2008-12-18
CN101319172A (zh) 2008-12-10
TWI445816B (zh) 2014-07-21
US8123976B2 (en) 2012-02-28

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