JP5142592B2 - 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物 - Google Patents

基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物 Download PDF

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Publication number
JP5142592B2
JP5142592B2 JP2007150353A JP2007150353A JP5142592B2 JP 5142592 B2 JP5142592 B2 JP 5142592B2 JP 2007150353 A JP2007150353 A JP 2007150353A JP 2007150353 A JP2007150353 A JP 2007150353A JP 5142592 B2 JP5142592 B2 JP 5142592B2
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JP
Japan
Prior art keywords
group
aqueous solution
solution composition
concentration
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007150353A
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English (en)
Japanese (ja)
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JP2008305900A5 (enExample
JP2008305900A (ja
Inventor
典夫 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Chemical Co Inc
Original Assignee
Kanto Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc filed Critical Kanto Chemical Co Inc
Priority to JP2007150353A priority Critical patent/JP5142592B2/ja
Priority to KR20080053102A priority patent/KR101482154B1/ko
Priority to TW097121237A priority patent/TWI445816B/zh
Priority to CN2008101083129A priority patent/CN101319172B/zh
Priority to US12/134,409 priority patent/US8123976B2/en
Publication of JP2008305900A publication Critical patent/JP2008305900A/ja
Publication of JP2008305900A5 publication Critical patent/JP2008305900A5/ja
Application granted granted Critical
Publication of JP5142592B2 publication Critical patent/JP5142592B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075—Cleaning of glass
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
JP2007150353A 2007-06-06 2007-06-06 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物 Expired - Fee Related JP5142592B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007150353A JP5142592B2 (ja) 2007-06-06 2007-06-06 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物
KR20080053102A KR101482154B1 (ko) 2007-06-06 2008-06-05 기판의 세정 또는 에칭을 위한 알칼리성 수용액 조성물
TW097121237A TWI445816B (zh) 2007-06-06 2008-06-06 Alkaline aqueous solution composition for substrate cleaning or etching
CN2008101083129A CN101319172B (zh) 2007-06-06 2008-06-06 用于基板的洗涤或蚀刻的碱性水溶液组合物
US12/134,409 US8123976B2 (en) 2007-06-06 2008-06-06 Alkaline aqueous solution composition used for washing or etching substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007150353A JP5142592B2 (ja) 2007-06-06 2007-06-06 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物

Publications (3)

Publication Number Publication Date
JP2008305900A JP2008305900A (ja) 2008-12-18
JP2008305900A5 JP2008305900A5 (enExample) 2010-06-17
JP5142592B2 true JP5142592B2 (ja) 2013-02-13

Family

ID=40159250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007150353A Expired - Fee Related JP5142592B2 (ja) 2007-06-06 2007-06-06 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物

Country Status (5)

Country Link
US (1) US8123976B2 (enExample)
JP (1) JP5142592B2 (enExample)
KR (1) KR101482154B1 (enExample)
CN (1) CN101319172B (enExample)
TW (1) TWI445816B (enExample)

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JP5720573B2 (ja) * 2009-10-02 2015-05-20 三菱瓦斯化学株式会社 シリコンエッチング液およびエッチング方法
US8883701B2 (en) * 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
US9873833B2 (en) 2014-12-29 2018-01-23 Versum Materials Us, Llc Etchant solutions and method of use thereof
CN105154268A (zh) * 2015-08-29 2015-12-16 江西赛维Ldk太阳能高科技有限公司 一种可减少硅片表面损伤层厚度的清洗液及清洗方法
JP6674628B2 (ja) * 2016-04-26 2020-04-01 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
JP6887722B2 (ja) * 2016-10-25 2021-06-16 株式会社ディスコ ウェーハの加工方法及び切削装置
JP7344471B2 (ja) * 2018-04-26 2023-09-14 三菱瓦斯化学株式会社 樹脂組成物、積層体、樹脂組成物層付き半導体ウェハ、樹脂組成物層付き半導体搭載用基板、及び半導体装置
KR102678071B1 (ko) * 2019-01-08 2024-06-24 동우 화인켐 주식회사 실리콘 막 식각액 조성물 및 이를 사용한 패턴 형성 방법
KR102886894B1 (ko) * 2019-03-26 2025-11-17 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물, 그 제조 방법, 표면 처리 방법 및 반도체 기판의 제조 방법
TW202106647A (zh) 2019-05-15 2021-02-16 美商康寧公司 在高溫下用高濃度鹼金屬氫氧化物減少紋理化玻璃、玻璃陶瓷以及陶瓷製品之厚度的方法
CN112480929A (zh) * 2020-10-23 2021-03-12 伯恩光学(惠州)有限公司 一种玻璃减薄剂
DE102020133278A1 (de) * 2020-12-14 2022-06-15 Schott Ag Verfahren zur Herstellung strukturierter Glasartikel durch alkalische Ätzung
CN114686236A (zh) * 2020-12-30 2022-07-01 伯恩光学(惠州)有限公司 一种玻璃手机前盖减薄剂
CN114685056A (zh) * 2020-12-30 2022-07-01 伯恩光学(惠州)有限公司 一种玻璃手机前盖减薄剂
CN114686235A (zh) * 2020-12-30 2022-07-01 伯恩光学(惠州)有限公司 一种玻璃手机后盖减薄剂
CN114686234A (zh) * 2020-12-30 2022-07-01 伯恩光学(惠州)有限公司 一种玻璃手机后盖减薄剂

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Also Published As

Publication number Publication date
US20090001315A1 (en) 2009-01-01
KR20080107306A (ko) 2008-12-10
KR101482154B1 (ko) 2015-01-13
TW200907048A (en) 2009-02-16
CN101319172B (zh) 2012-06-27
JP2008305900A (ja) 2008-12-18
CN101319172A (zh) 2008-12-10
TWI445816B (zh) 2014-07-21
US8123976B2 (en) 2012-02-28

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