KR101482154B1 - 기판의 세정 또는 에칭을 위한 알칼리성 수용액 조성물 - Google Patents
기판의 세정 또는 에칭을 위한 알칼리성 수용액 조성물 Download PDFInfo
- Publication number
- KR101482154B1 KR101482154B1 KR20080053102A KR20080053102A KR101482154B1 KR 101482154 B1 KR101482154 B1 KR 101482154B1 KR 20080053102 A KR20080053102 A KR 20080053102A KR 20080053102 A KR20080053102 A KR 20080053102A KR 101482154 B1 KR101482154 B1 KR 101482154B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- substrate
- cleaning
- aqueous solution
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
- H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007150353A JP5142592B2 (ja) | 2007-06-06 | 2007-06-06 | 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物 |
| JPJP-P-2007-00150353 | 2007-06-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080107306A KR20080107306A (ko) | 2008-12-10 |
| KR101482154B1 true KR101482154B1 (ko) | 2015-01-13 |
Family
ID=40159250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR20080053102A Expired - Fee Related KR101482154B1 (ko) | 2007-06-06 | 2008-06-05 | 기판의 세정 또는 에칭을 위한 알칼리성 수용액 조성물 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8123976B2 (enExample) |
| JP (1) | JP5142592B2 (enExample) |
| KR (1) | KR101482154B1 (enExample) |
| CN (1) | CN101319172B (enExample) |
| TW (1) | TWI445816B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5720573B2 (ja) * | 2009-10-02 | 2015-05-20 | 三菱瓦斯化学株式会社 | シリコンエッチング液およびエッチング方法 |
| US8883701B2 (en) * | 2010-07-09 | 2014-11-11 | Air Products And Chemicals, Inc. | Method for wafer dicing and composition useful thereof |
| US9873833B2 (en) | 2014-12-29 | 2018-01-23 | Versum Materials Us, Llc | Etchant solutions and method of use thereof |
| CN105154268A (zh) * | 2015-08-29 | 2015-12-16 | 江西赛维Ldk太阳能高科技有限公司 | 一种可减少硅片表面损伤层厚度的清洗液及清洗方法 |
| JP6674628B2 (ja) * | 2016-04-26 | 2020-04-01 | 信越化学工業株式会社 | 洗浄剤組成物及び薄型基板の製造方法 |
| JP6887722B2 (ja) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | ウェーハの加工方法及び切削装置 |
| JP7344471B2 (ja) * | 2018-04-26 | 2023-09-14 | 三菱瓦斯化学株式会社 | 樹脂組成物、積層体、樹脂組成物層付き半導体ウェハ、樹脂組成物層付き半導体搭載用基板、及び半導体装置 |
| KR102678071B1 (ko) * | 2019-01-08 | 2024-06-24 | 동우 화인켐 주식회사 | 실리콘 막 식각액 조성물 및 이를 사용한 패턴 형성 방법 |
| KR102886894B1 (ko) * | 2019-03-26 | 2025-11-17 | 가부시키가이샤 후지미인코퍼레이티드 | 표면 처리 조성물, 그 제조 방법, 표면 처리 방법 및 반도체 기판의 제조 방법 |
| TW202106647A (zh) | 2019-05-15 | 2021-02-16 | 美商康寧公司 | 在高溫下用高濃度鹼金屬氫氧化物減少紋理化玻璃、玻璃陶瓷以及陶瓷製品之厚度的方法 |
| CN112480929A (zh) * | 2020-10-23 | 2021-03-12 | 伯恩光学(惠州)有限公司 | 一种玻璃减薄剂 |
| DE102020133278A1 (de) * | 2020-12-14 | 2022-06-15 | Schott Ag | Verfahren zur Herstellung strukturierter Glasartikel durch alkalische Ätzung |
| CN114686236A (zh) * | 2020-12-30 | 2022-07-01 | 伯恩光学(惠州)有限公司 | 一种玻璃手机前盖减薄剂 |
| CN114685056A (zh) * | 2020-12-30 | 2022-07-01 | 伯恩光学(惠州)有限公司 | 一种玻璃手机前盖减薄剂 |
| CN114686235A (zh) * | 2020-12-30 | 2022-07-01 | 伯恩光学(惠州)有限公司 | 一种玻璃手机后盖减薄剂 |
| CN114686234A (zh) * | 2020-12-30 | 2022-07-01 | 伯恩光学(惠州)有限公司 | 一种玻璃手机后盖减薄剂 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990058801A (ko) * | 1997-12-30 | 1999-07-15 | 성재갑 | 망간 착화합물을 함유한 표백세제 조성물 |
| JP3111979B2 (ja) | 1998-05-20 | 2000-11-27 | 日本電気株式会社 | ウエハの洗浄方法 |
| KR20030051721A (ko) * | 2000-10-16 | 2003-06-25 | 말린크로트 베이커, 인코포레이티드 | 초소형 전자 기판 세정용 안정된 알카라인 조성물 |
| KR20070050373A (ko) * | 2005-11-10 | 2007-05-15 | 에포크 머티리얼 컴퍼니, 리미티드 | 수성 알칼리성 포토레지스트 세정용 조성물 및 이의 사용방법 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4022835A (en) * | 1975-03-10 | 1977-05-10 | Ashland Oil, Inc. | Multiple metal deactivators, method for preparing, and use thereof |
| JPH03198878A (ja) | 1989-11-30 | 1991-08-30 | Oshima Tetsuo | 二機能切替えのできるフイギアスケートボード |
| JPH03274834A (ja) | 1990-03-26 | 1991-12-05 | Nippon Telegr & Teleph Corp <Ntt> | パーソナル通信方式 |
| JP3274834B2 (ja) | 1991-01-24 | 2002-04-15 | 和光純薬工業株式会社 | 表面処理方法及び処理剤 |
| EP0496605B1 (en) * | 1991-01-24 | 2001-08-01 | Wako Pure Chemical Industries Ltd | Surface treating solutions for semiconductors |
| US5380468A (en) * | 1992-10-20 | 1995-01-10 | Man-Gill Chemical Company | Aqueous alkaline composition for cleaning aluminum and tin surfaces |
| JPH08283754A (ja) * | 1995-04-06 | 1996-10-29 | Sanyo Chem Ind Ltd | 燃料油組成物 |
| JP3198878B2 (ja) | 1995-07-27 | 2001-08-13 | 三菱化学株式会社 | 表面処理組成物及びそれを用いた基体の表面処理方法 |
| US5885362A (en) * | 1995-07-27 | 1999-03-23 | Mitsubishi Chemical Corporation | Method for treating surface of substrate |
| JP3678505B2 (ja) * | 1995-08-29 | 2005-08-03 | 信越半導体株式会社 | 半導体ウェーハをエッチングするためのアルカリ溶液の純化方法及び半導体ウェーハのエッチング方法 |
| JP3503326B2 (ja) | 1996-01-30 | 2004-03-02 | 和光純薬工業株式会社 | 半導体表面処理溶液 |
| JP3228211B2 (ja) * | 1997-01-27 | 2001-11-12 | 三菱化学株式会社 | 表面処理組成物及びそれを用いた基体の表面処理方法 |
| AU4189599A (en) * | 1998-05-18 | 1999-12-06 | Mallinckrodt, Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
| JP2004014813A (ja) * | 2002-06-07 | 2004-01-15 | Showa Denko Kk | 金属研磨組成物、それを用いた研磨方法及びそれを用いた基板の製造方法 |
| JP4752270B2 (ja) * | 2002-11-08 | 2011-08-17 | 和光純薬工業株式会社 | 洗浄液及びそれを用いた洗浄方法 |
| JP4288112B2 (ja) | 2003-07-17 | 2009-07-01 | 鶴見曹達株式会社 | 基板処理方法及び基板処理液 |
| JP2005158759A (ja) | 2003-08-29 | 2005-06-16 | Sumitomo Mitsubishi Silicon Corp | シリコン体のアルカリ処理技術 |
| JP4700333B2 (ja) * | 2003-12-22 | 2011-06-15 | シルトロニック・ジャパン株式会社 | シリコンウエーハ用の高純度アルカリエッチング液およびシリコンウエーハアルカリエッチング方法 |
| JP4271073B2 (ja) | 2004-04-16 | 2009-06-03 | 鶴見曹達株式会社 | 基板処理方法および基板処理液 |
| JP4487753B2 (ja) * | 2004-12-10 | 2010-06-23 | 株式会社Sumco | シリコンウェーハ用のアルカリエッチング液及び該エッチング液を用いたエッチング方法 |
-
2007
- 2007-06-06 JP JP2007150353A patent/JP5142592B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-05 KR KR20080053102A patent/KR101482154B1/ko not_active Expired - Fee Related
- 2008-06-06 CN CN2008101083129A patent/CN101319172B/zh not_active Expired - Fee Related
- 2008-06-06 US US12/134,409 patent/US8123976B2/en not_active Expired - Fee Related
- 2008-06-06 TW TW097121237A patent/TWI445816B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990058801A (ko) * | 1997-12-30 | 1999-07-15 | 성재갑 | 망간 착화합물을 함유한 표백세제 조성물 |
| JP3111979B2 (ja) | 1998-05-20 | 2000-11-27 | 日本電気株式会社 | ウエハの洗浄方法 |
| KR20030051721A (ko) * | 2000-10-16 | 2003-06-25 | 말린크로트 베이커, 인코포레이티드 | 초소형 전자 기판 세정용 안정된 알카라인 조성물 |
| KR20070050373A (ko) * | 2005-11-10 | 2007-05-15 | 에포크 머티리얼 컴퍼니, 리미티드 | 수성 알칼리성 포토레지스트 세정용 조성물 및 이의 사용방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090001315A1 (en) | 2009-01-01 |
| KR20080107306A (ko) | 2008-12-10 |
| JP5142592B2 (ja) | 2013-02-13 |
| TW200907048A (en) | 2009-02-16 |
| CN101319172B (zh) | 2012-06-27 |
| JP2008305900A (ja) | 2008-12-18 |
| CN101319172A (zh) | 2008-12-10 |
| TWI445816B (zh) | 2014-07-21 |
| US8123976B2 (en) | 2012-02-28 |
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| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20180108 |
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| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |