CN101225511A - 清洗cvd腔室的热f2蚀刻方法 - Google Patents
清洗cvd腔室的热f2蚀刻方法 Download PDFInfo
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Abstract
本说明书中公开了一种使用预稀释的氟气的热活化源对半导体加工腔室中不希望有的氮化硅的设备表面进行热清洗的方法。该方法包括：(a)使在惰性气体中预稀释的氟气流过所述腔室；(b)使所述腔室保持在230℃－565℃的升高的温度下以热离解氟气；(c)通过(b)中热解离的氟气与不希望有的氮化硅之间的化学反应生成挥发性反应产物，从表面清除不希望有的氮化硅；(d)从所述腔室中去除挥发性反应产物。
Description
背景技术
[0001]在互补金属氧化物半导体(CMOS)集成电路制备中，低压化学气相沉积(LPCVD)作为系列步骤中的一部分起到非常重要的作用。在热壁反应器中，氮化硅通过二氯硅烷(DCS)与氨的反应而沉积在LPCVD中。反应的主要动力是来自于能在650-850℃之间操作的反应器的热能。但是，因为技术节点从130nm前进至32nm，热预算(thermal budget)成为严重问题。为克服该问题，引入了需要较少热能以反应的新LPCVD前体。例如，作为使用DCS和氨在700℃沉积氮化硅薄膜的备选方案，有机胺取代的硅烷(organic amine substituted silanes)如双(叔丁基胺)硅烷(BTBAS，Bis(Tertiary Butyl Amino)silane)、二异丙基胺硅烷(DIPAS)和二乙基胺硅烷(DEAS)或有机取代的硅烷(organic substituted silane)如四烯丙基硅烷和三乙烯基硅烷以及双叔丁基氨基硅烷(bis-tertiary butyl aminosilane)与氨在600℃或更低温度下反应是有利的，因为这明显地降低了热预算。由这种方法制得的氮化硅薄膜不仅沉积在晶片上，而且也沉积在石英反应器壁和反应器部件上。而且，这种方法制得的氮化物薄膜具有高的拉伸应力，由于反应器中累积的沉积物，这可以导致薄膜碎裂(spalling)而引起的设备晶片的高水平的颗粒污染。为防止晶片污染，必须在累积的沉积物开始碎裂前清洗氮化物炉。由于薄膜碎裂引起的颗粒形成，较高应力薄膜要求对LPCVD反应器和晶片固定器进行更频繁的清洗。
[0002]现行实践是通过冷却石英管至室温手工清洗氮化硅沉积物的LPCVD反应器，然后移走它们并将它们放置在湿HF蚀刻中。湿清洗过程要求设备一共停工8至6小时。与只要求在生产60-90天后进行清洗的DCS氮化物炉相比，BTBAS氮化物炉一般要求在每工作两天后进行清洗。因此，对于在体积半导体(volume semiconductor)生产中实用的有机胺取代的硅烷或有机取代的硅烷氮化物方法来说，这将要求具有2-3小时循环时间的原位清洗。而且，有机胺取代的硅烷或有机取代的硅烷的沉积要求温度范围是500-600℃。因此，作为大约在500-600℃范围的反应器温度函数的清洗时间变得更加重要。
[0003]D.Foster，J.Ellenberger，R.B.Herring，A.D.Johnson和C.L.Hartz，″In-situ process for periodic cleaning of low temperature nitride furnaces″，Proceedingof the 204th Meeting of the Elecirochemical Society，Orlando FL(The ElectrochemicalSociety，Inc.Pennington，NJ，2003年10月)，第285-293页(其主题引入本文供参考)公开了在这个温度范围内使用20％NF3蚀刻SiNX，但是该蚀刻较慢(在550℃和30托下为0.02μm/min)。对于在体积半导体生产中实用的有机胺取代的硅烷或有机取代的硅烷氮化物方法来说，需要更有效的在500℃-600℃附近具有较低的热活化温度的清洗方法。
发明内容
[0004]本发明方法的一个实施方案包括使在惰性气体中预先稀释的氟气流过腔室，并且保持腔室在230-565℃的升高的温度(elevated temperature)下使氟气热离解(disassociate)，从而通过移去由热活化的氟气与不希望有的氮化硅之间的化学反应所形成的挥发性反应产物SiF4清洗CVD腔室。根据本发明的另一实施方案，使用450℃-550℃的升高的温度。
附图说明
[0005]图1是本发明的热F2蚀刻的实施方案的示意图。
[0006]图2图示了在30托下，N2中预稀释的20％F2的氮化硅的热F2蚀刻率与温度的关系。
[0007]图3图示了在30托下，N2中预稀释的20％NF3的氮化硅的热NF3蚀刻率与温度的关系。
具体实施方式
[0008]图1显示了本发明的试验性实施方案的示意图。设备(setup)的中间部件是反应管1，该反应管由镍201合金和焊接到所述管的不锈钢CF法兰(conflate flange)端制成。管的外径(″O.D″)是21/4″并在管中央含有6英寸×1.5英寸的盛装氮化物晶片试样3的镍盘2。通过移去CF法兰，将盘子2在管1的末端插入。反应管1被炉子4包围，该炉子是由Advanced Temperature Systems生产，具有用于提升样品温度的加热器。通过Watlow PID控制器控制反应器温度。通过以50或100sccm流率使来自高压气瓶的N2中预稀释的F2流动，向反应器中引入分子氟气5。流动由STEC型3400加热的质量流动控制器MFC控制。在每次试验前后使用纯氮气6吹扫反应器。使用由MKS系统生产的加热的(100℃)电容压力计(1000托)测量反应器管压。通过在反应器输出侧用闸阀7调节系统的抽吸速度从而手动控制压力。使用Alcatel两段旋转泵8来抽吸系统。
[0009]用DCS沉积的氮化硅薄膜是在SiO2层上的约1微米厚的氮化硅。将氮化硅晶片劈开成大约2cm×2cm的小块试样3。再将试样放入反应器前，样品首先在氨-过氧化物溶液(RCA-1清洗)中在70℃清洗10min以去除任何有机污染物。然后将试样放入0.5％HF溶液中5-10秒以去除可能已堆积的任何表面氧化物。然后漂洗样品，干燥，然后放入反应器中。
[0010]将氮化硅样品放置在盘子上置于热反应器的中央，相对于盘子，其一端略微升高(约5mm)，并且试样的表面与气体流动平行。反应器管的端部然后通过放置CF真空法兰而密封。进行几次抽吸/真空循环以去除反应器中的大气气体。然后用100sccm的氮气吹扫反应器。一旦吹扫所述腔室，打开炉子4，并且编程以在2h内达到操作温度。一旦炉子达到设定温度，使用额外2小时以保证内部温度达标。使用粘结在所述腔室中的热偶阱(thermal couple well)监视内部温度。一旦反应器的内部温度达标，关闭氮气阀，并且使得系统抽空至＜100毫托。在达到基础真空水平后，通过打开氟气阀将氟气引入反应器。然后对晶片在任何位置进行蚀刻，蚀刻时间为1分钟至10分钟以上，前者针对较重的蚀刻(较高温度和压力)，后者针对较少的蚀刻(较低温度和压力)。通过关闭氟气阀停止蚀刻并且立即打开闸阀7以充分排空所述腔室并使挥发性反应产物被完全从所述腔室抽出。蚀刻时间由氮化硅暴露于氟气的时间长度确定。然后在移出样品试样后冷却反应器。在实际操作环境中，蚀刻和清洗在一般的操作条件下进行。
[0011]在蚀刻前后使用反射仪分析氮化硅样品以通过薄膜厚度的变化确定蚀刻率。然后通过将材料厚度的变化(单位为纳米)除以蚀刻时间来计算蚀刻率。
[0012]因为DOT规程限制在压力不高于400psig气瓶内运输纯氟气，所以使用稀释(不高于20％)分子氟气。使用氮气或其它惰性气体稀释的氟气降低了氟气的危险，同时使可被运输的氟气的量最大化。这就允许使用大量氟气清洗所述腔室而无需现场氟气发生器。
试验I
[0013]在第一次试验中，反应器管保持在400℃、30托。在反应器管中引入不同浓度的在N2中预稀释的F2。使用在N2中预稀释的F2蚀刻的氮化硅(SiNX)的热蚀刻率测量结果与F2浓度的关系如表1所示。
表1氮化硅蚀刻率与F2浓度的关系
| N2中的F2％ | 温度(℃) | 压力(托) | 蚀刻率(nm/min) |
| 2.5 | 400 | 30 | 17 |
| 5 | 400 | 30 | 29 |
| 20 | 400 | 30 | 155 |
[0014]结果显示稀释的分子氟气(不超过20％)具有低热活化温度。F2与氮化硅反应生成可从所述腔室抽出的SiF4。使用2.5％的F2时，蚀刻率是17nm/min，使用5％的F2时，蚀刻率是29nm/min，使用20％的F2时，蚀刻率是155nm/min。结果表明在固定的温度和压力下蚀刻率随F2浓度增加而增加。结果进一步表明即使使用非常低浓度的2.5％F2，蚀刻率在400℃时是0.017μm/min，这与在550℃使用20％NF3的蚀刻率0.02μm/min相当。
试验II
[0015]为进一步确定在N2中预稀释的20％F2对氮化硅的热蚀刻率，进行了试验设计(DOE)研究。DOE研究的参数范围涵盖了温度230℃-511℃和压力10-103托。确定了不同温度和压力下共12个氮化硅的蚀刻率。
[0016]表II给出了在不同温度和压力下用预稀释的20％F2所蚀刻的氮化硅的热蚀刻率的测量结果。结果再次表明稀释(不大于20％)的分子氟气具有低热活化温度，即使在低温例如230℃氮化硅的蚀刻同样发生。
表II氮化硅的蚀刻率
| 试验序号 | 温度(℃) | 压力(托) | 蚀刻率(nm/min) |
| 1 | 230 | 51.5 | 11.2 |
| 2 | 231 | 101 | 17.6 |
| 3 | 234 | 10.3 | 6.6 |
| 4 | 262 | 103 | 60.2 |
| 5 | 374 | 100 | 236.9 |
| 6 | 378 | 55.8 | 139.7 |
| 7 | 403 | 31 | 290.9 |
| 8 | 404 | 30.5 | 271.2 |
| 9 | 405 | 30.4 | 205.9 |
| 10 | 510 | 100 | 770.3 |
| 11 | 511 | 10 | 629.2 |
| 12 | 511 | 51.8 | 713.1 |
[0017]数据表明蚀刻率很大程度上取决于温度以及在较小程度上取决于压力。在300℃以下蚀刻率相当低，在500℃和100托条件下迅速提高至＞600nm/min。
试验III
[0018]以第二个试验为基础，进一步研究了在固定压力不同温度下使用预稀释的20％F2的蚀刻率。在这组试验中，在300℃-550℃温度范围内，在30托下用N2中的20％F2进行了一系列热蚀刻率试验。相对于温度的蚀刻率的试验数据绘制于图2。
[0019]在300℃下20％F2的蚀刻率是53nm/min，在400℃下是139nm/min，在550℃下迅速增加至965nm/min。数据表明蚀刻率随温度增加呈指数增加，如图2中指数拟合的实线所证实。
[0020]图3图示了30托下N2中预稀释的20％NF3对用BTBAS所沉积的氮化硅薄膜的热NF3蚀刻率与500℃-600℃温度范围的函数关系。数据取自D.Foster，J.Ellenberger，R.B.Herring，A.D.Johnson和C.L.Hartz，″In-situ process forperiodic cleaning of low temperature nitride furnaces，″Proceedings of the 204thMeeting of the Electrochemical Society，Orlando FL(The Electrochemical Society，Inc.Pennington，NJ，2003年10月)，第285-293页中的的图1(其主题引入本文供参考)。该实线是指数拟合的。
[0021]虽然20％NF3对氮化硅的蚀刻率也显示为呈指数增加，20％NF3的这种增加的窗口(window)(约580℃)比20％F2(约370℃)高约200度。因为下一代氮化硅沉积方法将在明显低于580℃条件下进行，所以这一结果意义重大。
[0022]如图3的图表所示，在300℃-600℃温度范围内，热的20％NF3的蚀刻率明显低于热的20％F2的蚀刻率(如图2所示)。例如，在500℃和30托下的20％NF3的蚀刻率(约2nm/min)小于在相同温度和压力下的20％F2蚀刻率(约500nm/min)两个数量级以上。
[0023]试验结果表明稀释的分子氟气(不大于20％)具有低得多的热活化温度和高得多的蚀刻率。因此，稀释的分子氟气(不大于20％)以大约300℃-600℃的较低的热活化温度在半导体加工腔室中提供更有效地清洗设备表面的不希望有的氮化硅。
试验IV
[0024]为评价蚀刻对石英反应器潜在的损害，进行了如下试验，研究试验II条件下20％F2和100％NF3对石英的影响。在热F2和NF3暴露后，测量火焰抛光石英(SiO2)的重量损失和表面褪化。这些测量提供了氮化物选择性的估值并说明20％F2和100％NF3对石英反应器潜在的损害。
[0025]表IV是结果总结。除了在550℃下使用氟气蚀刻样品10min以外，全部石英样品都蚀刻20min。目测检查后，用20％氟气蚀刻的石英片表观为在400℃下蚀刻样品时的光滑和轻微混浊(hazy)到在550℃下蚀刻样品时的非常混浊。或者，使用100％NF3蚀刻时除了导致石英片混浊之外还导致其变色(留下呈褐色的外表)。这种石英蚀刻率数据结合上述氮化硅蚀刻率数据表明在400℃下20％F2时不希望有的石英蚀刻类似于550℃下100％NF3的蚀刻，然而20％F2对氮化硅的蚀刻率高得多。
表IV暴露于热F2和NF3后，火焰抛光石英的蚀刻率和表面褪化
| 蚀刻气体 | 温度 | 压力 | 蚀刻率％ | 目测表面损害 |
| (℃) | (托) | (质量损失％/min) | ||
| 空白 | n/a | n/a | n/a | 光滑且透明表观 |
| F2 | 550 | 50 | 0.496 | 非常混浊但是没有变色 |
| F2 | 400 | 50 | 0.045 | 轻微混浊但是没有变色 |
| NF3 | 550 | 100 | 0.023 | 混浊且呈褐色变色 |
| NF3 | 550 | 10 | 0.042 | 轻微混浊且呈褐色变色 |
[0026]虽然已经在细节上描述了具体的实施方案，但本领域普通技术人员将理解在本公开内容的整体教导下，可以形成对这些细节的各种修改及变形。因此，具体公开的方案只是用于说明，并不限制本发明的范围，本发明的范围由所附的权利要求和其任何等价方案给出。
Claims (8)
1.一种使用预稀释的氟气对半导体加工腔室中不希望有的氮化硅的设备表面热清洗的方法，包括：
(a)使在惰性气体中预稀释的氟气流过所述腔室；
(b)使所述腔室保持在230℃-565℃的升高的温度下以热离解氟气；
(c)通过(b)中热解离的氟气与不希望有的氮化硅之间的化学反应生成挥发性反应产物，从表面清除不希望有的氮化硅；
(d)从所述腔室中去除挥发性反应产物。
2.权利要求1的方法，其中所述升高的温度是450-550℃。
3.权利要求1或2的方法，其中惰性气体中预稀释的氟气的氟气浓度不大于20％。
4.权利要求1或2的方法，其中惰性气体选自氮气、氩气、氦气及其混合物。
5.权利要求1或2的方法，其中进一步包括(e)使所述腔室压力保持在10至101托的范围内。
6.权利要求1或2的方法，其中通过有机胺取代的硅烷或有机取代的硅烷与氨反应沉积氮化硅。
7.权利要求6的方法，其中有机胺取代的硅烷选自双叔丁基胺硅烷(BTBAS)、二异丙基胺硅烷DIPAS和二乙基胺硅烷(DEAS)，而有机取代的硅烷选自四烯丙基硅烷和三乙烯基硅烷以及双叔丁基氨基硅烷。
8.权利要求1或2的方法，其中氮化硅通过二氯硅烷(DCS)与氨的反应而沉积。
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112570393A (zh) * | 2019-09-27 | 2021-03-30 | 长鑫存储技术有限公司 | 炉管清洗方法 |
| CN113680767A (zh) * | 2021-07-14 | 2021-11-23 | 深圳市拉普拉斯能源技术有限公司 | 一种lpcvd炉管在线清洗方法 |
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| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
| TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
| TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基材處理設備及處理基材之方法 |
| KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
| JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
| KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー．ブイ． | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー．ブイ． | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| KR20210010817A (ko) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
| CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
| CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー．ブイ． | 成膜原料混合ガス生成装置及び成膜装置 |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基板處理裝置 |
| TWI846966B (zh) | 2019-10-10 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
| KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
| TW202142733A (zh) | 2020-01-06 | 2021-11-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 反應器系統、抬升銷、及處理方法 |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
| TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 專用於零件清潔的系統 |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
| KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
| TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| KR20210127620A (ko) | 2020-04-13 | 2021-10-22 | 에이에스엠 아이피 홀딩 비.브이. | 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템 |
| JPWO2021210368A1 (zh) * | 2020-04-14 | 2021-10-21 | ||
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
| KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
| KR20210132576A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조 |
| KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
| KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
| TW202147543A (zh) | 2020-05-04 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 半導體處理系統 |
| KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
| TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
| KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
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Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2538657A (en) * | 1945-07-10 | 1951-01-16 | Gen Electric | Tetra allyl silane and polymers thereof |
| US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
| US5714011A (en) * | 1995-02-17 | 1998-02-03 | Air Products And Chemicals Inc. | Diluted nitrogen trifluoride thermal cleaning process |
| JPH1072672A (ja) * | 1996-07-09 | 1998-03-17 | Applied Materials Inc | 非プラズマ式チャンバクリーニング法 |
| US5861065A (en) * | 1997-01-21 | 1999-01-19 | Air Products And Chemicals, Inc. | Nitrogen trifluoride-oxygen thermal cleaning process |
| US5868852A (en) * | 1997-02-18 | 1999-02-09 | Air Products And Chemicals, Inc. | Partial clean fluorine thermal cleaning process |
| US20030010354A1 (en) * | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
| JP2002100618A (ja) * | 2000-07-18 | 2002-04-05 | Showa Denko Kk | 半導体製造装置のクリーニングガス及びクリーニング方法 |
| JP3421329B2 (ja) * | 2001-06-08 | 2003-06-30 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法 |
| AU2002366920A1 (en) * | 2001-12-13 | 2003-07-09 | Showa Denko K.K. | Cleaning gas composition for semiconductor production equipment and cleaning method using the gas |
| JP4430918B2 (ja) * | 2003-03-25 | 2010-03-10 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法及び薄膜形成方法 |
| JP4272486B2 (ja) * | 2003-08-29 | 2009-06-03 | 東京エレクトロン株式会社 | 薄膜形成装置及び薄膜形成装置の洗浄方法 |
-
2006
- 2006-12-13 US US11/638,120 patent/US20080142046A1/en not_active Abandoned
-
2007
- 2007-12-11 EP EP07122918A patent/EP1932941A1/en not_active Withdrawn
- 2007-12-11 TW TW096147311A patent/TW200826172A/zh unknown
- 2007-12-12 JP JP2007321131A patent/JP2008153662A/ja not_active Withdrawn
- 2007-12-12 KR KR1020070129309A patent/KR20080055673A/ko not_active Application Discontinuation
- 2007-12-13 CN CNA2007100932788A patent/CN101225511A/zh active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101899651B (zh) * | 2008-11-12 | 2012-12-26 | 气体产品与化学公司 | 用于应力SiN薄膜的氨基乙烯基硅烷前体 |
| CN105088175A (zh) * | 2014-04-25 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 一种对沉积薄膜反应装置的处理方法、薄膜沉积方法 |
| CN112570393A (zh) * | 2019-09-27 | 2021-03-30 | 长鑫存储技术有限公司 | 炉管清洗方法 |
| CN113680767A (zh) * | 2021-07-14 | 2021-11-23 | 深圳市拉普拉斯能源技术有限公司 | 一种lpcvd炉管在线清洗方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1932941A1 (en) | 2008-06-18 |
| KR20080055673A (ko) | 2008-06-19 |
| US20080142046A1 (en) | 2008-06-19 |
| JP2008153662A (ja) | 2008-07-03 |
| TW200826172A (en) | 2008-06-16 |
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