CN101213169A - 锍盐引发剂 - Google Patents

锍盐引发剂 Download PDF

Info

Publication number
CN101213169A
CN101213169A CNA2006800238530A CN200680023853A CN101213169A CN 101213169 A CN101213169 A CN 101213169A CN A2006800238530 A CNA2006800238530 A CN A2006800238530A CN 200680023853 A CN200680023853 A CN 200680023853A CN 101213169 A CN101213169 A CN 101213169A
Authority
CN
China
Prior art keywords
acid
alkyl
phenyl
compound
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800238530A
Other languages
English (en)
Chinese (zh)
Inventor
J·-P·沃尔夫
A·拉蒂卡
J·-L·伯鲍姆
S·伊尔格
P·哈约茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF Schweiz AG
Original Assignee
Ciba Spezialitaetenchemie Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ciba Spezialitaetenchemie Holding AG filed Critical Ciba Spezialitaetenchemie Holding AG
Publication of CN101213169A publication Critical patent/CN101213169A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
    • C07D209/82—Carbazoles; Hydrogenated carbazoles
    • C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
CNA2006800238530A 2005-07-01 2006-06-21 锍盐引发剂 Pending CN101213169A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05105991 2005-07-01
EP05105991.3 2005-07-01

Publications (1)

Publication Number Publication Date
CN101213169A true CN101213169A (zh) 2008-07-02

Family

ID=35453417

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006800238530A Pending CN101213169A (zh) 2005-07-01 2006-06-21 锍盐引发剂

Country Status (9)

Country Link
US (1) US7901867B2 (https=)
EP (1) EP1902019B1 (https=)
JP (1) JP5081151B2 (https=)
KR (1) KR101334046B1 (https=)
CN (1) CN101213169A (https=)
AT (1) ATE473209T1 (https=)
DE (1) DE602006015319D1 (https=)
TW (1) TW200710074A (https=)
WO (1) WO2007003507A1 (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102300846A (zh) * 2008-12-12 2011-12-28 拜耳先灵医药股份有限公司 用于标记正电子发射同位素的三芳基锍化合物、药盒和方法
CN102471255A (zh) * 2009-10-26 2012-05-23 株式会社艾迪科 芳香族锍盐化合物
CN102603587A (zh) * 2011-01-03 2012-07-25 锦湖石油化学株式会社 锍化合物、光致产酸剂及其制备方法
CN101625523B (zh) * 2008-07-11 2012-09-19 信越化学工业株式会社 光阻图案的形成方法及光掩模的制造方法
CN103642383A (zh) * 2013-12-04 2014-03-19 江南大学 一种本征型光固化抗静电树脂的制备方法
CN103728836A (zh) * 2012-09-15 2014-04-16 罗门哈斯电子材料有限公司 生酸剂化合物和含有其的光致抗蚀剂组合物
TWI496766B (zh) * 2008-10-20 2015-08-21 Basf Se 鋶衍生物及其作為潛酸之用途
TWI573782B (zh) * 2012-12-07 2017-03-11 Ｄｓｐ五協食品＆化學品股份有限公司 新穎鋶鹽化合物、其製造方法及光酸產生劑
CN107365266A (zh) * 2016-05-11 2017-11-21 信越化学工业株式会社 新型锍化合物及其制造方法、抗蚀剂组合物、以及图案形成方法

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4866606B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4695996B2 (ja) * 2006-02-27 2011-06-08 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
CN101522613B (zh) 2006-10-04 2013-03-06 西巴控股有限公司 锍盐光引发剂
US8227624B2 (en) * 2007-08-07 2012-07-24 Adeka Corporation Aromatic sulfonium salt compound
KR101599562B1 (ko) * 2007-10-10 2016-03-03 바스프 에스이 술포늄 염 개시제
CN101952269B (zh) * 2007-10-10 2014-06-25 巴斯夫欧洲公司 锍盐引发剂
CN101952248B (zh) 2007-10-10 2014-04-16 巴斯夫欧洲公司 锍盐引发剂
KR20110025211A (ko) * 2008-06-12 2011-03-09 바스프 에스이 술포늄 유도체 및 잠재성 산으로서의 그의 용도
EP2199856B1 (en) 2008-12-18 2013-08-07 Agfa Graphics N.V. Cationic radiation curable compositions
KR101700980B1 (ko) * 2009-02-20 2017-01-31 산아프로 가부시키가이샤 술포늄염, 광산 발생제 및 감광성 수지 조성물
JP5576139B2 (ja) * 2009-02-20 2014-08-20 サンアプロ株式会社 スルホニウム塩，光酸発生剤，光硬化性組成物，及びその硬化体
JP5448157B2 (ja) * 2009-03-13 2014-03-19 株式会社Ａｄｅｋａ 芳香族スルホニウム塩化合物
JP5491913B2 (ja) * 2009-03-18 2014-05-14 サンアプロ株式会社 化学増幅型ポジ型フォトレジスト組成物及びレジストパターンの製造方法
JP5543757B2 (ja) * 2009-11-11 2014-07-09 サンアプロ株式会社 スルホニウム塩，光酸発生剤，硬化性組成物及びポジ型フォトレジスト組成物
WO2011060293A1 (en) * 2009-11-12 2011-05-19 Ndsu Research Foundation Polymers derived from plant oil
US9382352B2 (en) 2009-11-12 2016-07-05 Ndsu Research Foundation Polymers derived from plant oil
CN106125509B (zh) 2009-12-17 2019-12-17 帝斯曼知识产权资产管理有限公司 用于加成法制造的可led固化的液体树脂组合物
CN102725689B (zh) 2010-01-22 2014-10-08 帝斯曼知识产权资产管理有限公司 能固化成具有选择性视觉效果的层的液体可辐射固化树脂及其使用方法
US8871423B2 (en) * 2010-01-29 2014-10-28 Samsung Electronics Co., Ltd. Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same
WO2011123441A1 (en) 2010-03-30 2011-10-06 Surmodics, Inc. Degradable photo-crosslinker
US10315987B2 (en) 2010-12-13 2019-06-11 Surmodics, Inc. Photo-crosslinker
JP5787720B2 (ja) * 2010-12-16 2015-09-30 キヤノン株式会社 感光性ネガ型樹脂組成物
US8816211B2 (en) * 2011-02-14 2014-08-26 Eastman Kodak Company Articles with photocurable and photocured compositions
EP2502728B1 (en) 2011-03-23 2017-01-04 DSM IP Assets B.V. Lightweight and high strength three-dimensional articles producible by additive fabrication processes
WO2013173734A1 (en) 2012-05-18 2013-11-21 Ndsu Research Foundation Functionalized amphiphilic plant-based polymers
US9631040B2 (en) 2012-05-18 2017-04-25 Ndsu Research Foundation Functionalized amphiphilic plant-based polymers
JP5899068B2 (ja) * 2012-06-28 2016-04-06 東京応化工業株式会社 厚膜用ポジ型レジスト組成物、厚膜レジストパターンの製造方法、接続端子の製造方法
TWI498675B (zh) * 2012-09-15 2015-09-01 羅門哈斯電子材料有限公司 酸產生劑化合物及含該化合物之光阻劑
US9834626B2 (en) 2013-01-15 2017-12-05 Ndsu Research Foundation Plant oil-based materials
WO2015174471A1 (ja) * 2014-05-13 2015-11-19 東洋合成工業株式会社 オニウム塩、光酸発生剤、感光性樹脂組成物及びデバイスの製造方法
US10416558B2 (en) * 2016-08-05 2019-09-17 Shin-Etsu Chemical Co., Ltd. Positive resist composition, resist pattern forming process, and photomask blank
JP6561937B2 (ja) * 2016-08-05 2019-08-21 信越化学工業株式会社 ネガ型レジスト組成物及びレジストパターン形成方法
CN107698477B (zh) 2016-08-08 2020-05-12 常州强力电子新材料股份有限公司 一种新型阳离子型光引发剂及其制备方法和应用
CN109456242B (zh) 2017-09-06 2021-02-12 常州强力电子新材料股份有限公司 硫鎓盐光引发剂、其制备方法、包含其的光固化组合物及其应用
JP2021522086A (ja) 2018-05-03 2021-08-30 ディーエスエム アイピー アセッツ ビー．ブイ．Ｄｓｍ Ｉｐ Ａｓｓｅｔｓ Ｂ．Ｖ． 積層造形によって作られる光造形物品の後加工方法
JP7499071B2 (ja) * 2019-06-04 2024-06-13 住友化学株式会社 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法並びに塩の製造方法
WO2021186846A1 (ja) * 2020-03-17 2021-09-23 サンアプロ株式会社 スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA805273B (en) * 1979-09-28 1981-11-25 Gen Electric Process of deep section curing photocurable compositions
JPH107649A (ja) * 1996-06-18 1998-01-13 Nippon Kayaku Co Ltd 光重合開始剤、これを含有するエネルギー線硬化性組成物及びその硬化物
KR100279497B1 (ko) * 1998-07-16 2001-02-01 박찬구 술포늄 염의 제조방법
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP3476374B2 (ja) * 1998-10-09 2003-12-10 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6723483B1 (en) * 1999-12-27 2004-04-20 Wako Pure Chemical Industries, Ltd. Sulfonium salt compounds
JP3972568B2 (ja) * 2000-05-09 2007-09-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びスルホニウム塩
JP4177952B2 (ja) * 2000-05-22 2008-11-05 富士フイルム株式会社 ポジ型レジスト組成物
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt
JP4150509B2 (ja) * 2000-11-20 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
JP4262402B2 (ja) * 2000-10-20 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP2002202605A (ja) * 2000-12-28 2002-07-19 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
ES2329345T3 (es) * 2001-07-19 2009-11-25 Lamberti Spa Sales de sulfonio como fotoiniciadores para sistemas que se pueden curar por radiacion.
JP2003255542A (ja) * 2002-03-04 2003-09-10 Fuji Photo Film Co Ltd ポジ型感光性組成物
GB0204467D0 (en) 2002-02-26 2002-04-10 Coates Brothers Plc Novel fused ring compounds, and their use as cationic photoinitiators
EP1516230B1 (en) * 2002-06-26 2015-12-30 FujiFilm Electronic Materials USA, Inc. Photosensitive compositions
JP4253486B2 (ja) * 2002-09-25 2009-04-15 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法
AU2003268671A1 (en) * 2002-09-25 2004-04-19 Asahi Denka Co.Ltd. Novel aromatic sulfonium salt compound, photo-acid generator comprising the same and photopolymerizable composition containing the same, resin composition for optical three-dimensional shaping, and method of optically forming three-dimensional shape
JP4115309B2 (ja) 2003-03-24 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4399192B2 (ja) * 2003-06-03 2010-01-13 富士フイルム株式会社 感光性組成物

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101625523B (zh) * 2008-07-11 2012-09-19 信越化学工业株式会社 光阻图案的形成方法及光掩模的制造方法
TWI496766B (zh) * 2008-10-20 2015-08-21 Basf Se 鋶衍生物及其作為潛酸之用途
CN102300846A (zh) * 2008-12-12 2011-12-28 拜耳先灵医药股份有限公司 用于标记正电子发射同位素的三芳基锍化合物、药盒和方法
CN102471255A (zh) * 2009-10-26 2012-05-23 株式会社艾迪科 芳香族锍盐化合物
CN102603587B (zh) * 2011-01-03 2014-06-25 锦湖石油化学株式会社 锍化合物、光致产酸剂及其制备方法
CN102603587A (zh) * 2011-01-03 2012-07-25 锦湖石油化学株式会社 锍化合物、光致产酸剂及其制备方法
CN103728836A (zh) * 2012-09-15 2014-04-16 罗门哈斯电子材料有限公司 生酸剂化合物和含有其的光致抗蚀剂组合物
CN103728836B (zh) * 2012-09-15 2017-04-19 罗门哈斯电子材料有限公司 生酸剂化合物和含有其的光致抗蚀剂组合物
TWI573782B (zh) * 2012-12-07 2017-03-11 Ｄｓｐ五協食品＆化學品股份有限公司 新穎鋶鹽化合物、其製造方法及光酸產生劑
CN103642383A (zh) * 2013-12-04 2014-03-19 江南大学 一种本征型光固化抗静电树脂的制备方法
CN103642383B (zh) * 2013-12-04 2016-04-20 江南大学 一种本征型光固化抗静电树脂的制备方法
CN107365266A (zh) * 2016-05-11 2017-11-21 信越化学工业株式会社 新型锍化合物及其制造方法、抗蚀剂组合物、以及图案形成方法
CN107365266B (zh) * 2016-05-11 2019-06-11 信越化学工业株式会社 新型锍化合物及其制造方法、抗蚀剂组合物、以及图案形成方法

Also Published As

Publication number Publication date
KR20080030082A (ko) 2008-04-03
US7901867B2 (en) 2011-03-08
US20090208872A1 (en) 2009-08-20
DE602006015319D1 (de) 2010-08-19
KR101334046B1 (ko) 2013-12-02
EP1902019B1 (en) 2010-07-07
TW200710074A (en) 2007-03-16
JP2009501148A (ja) 2009-01-15
ATE473209T1 (de) 2010-07-15
JP5081151B2 (ja) 2012-11-21
EP1902019A1 (en) 2008-03-26
WO2007003507A1 (en) 2007-01-11

Similar Documents

Publication Publication Date Title
JP5081151B2 (ja) スルホニウム塩開始剤
JP4966446B2 (ja) 潜伏性酸供与体としてのヨードニウム塩
CN102026967B (zh) 锍盐引发剂
KR101653427B1 (ko) 술포늄 유도체 및 잠재성 산으로서의 그의 용도
CN101952269B (zh) 锍盐引发剂
CN101952248B (zh) 锍盐引发剂

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20080702