TW200710074A - Sulphonium salt initiators - Google Patents
Sulphonium salt initiatorsInfo
- Publication number
- TW200710074A TW200710074A TW095123894A TW95123894A TW200710074A TW 200710074 A TW200710074 A TW 200710074A TW 095123894 A TW095123894 A TW 095123894A TW 95123894 A TW95123894 A TW 95123894A TW 200710074 A TW200710074 A TW 200710074A
- Authority
- TW
- Taiwan
- Prior art keywords
- c20alkyl
- phenanthryl
- anthryl
- naphthyl
- biphenylyl
- Prior art date
Links
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 title 1
- 239000003999 initiator Substances 0.000 title 1
- -1 biphenylyl Chemical group 0.000 abstract 5
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 abstract 4
- 125000005561 phenanthryl group Chemical group 0.000 abstract 4
- 125000001624 naphthyl group Chemical group 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
- 229910052717 sulfur Inorganic materials 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 150000001450 anions Chemical class 0.000 abstract 1
- 125000004653 anthracenylene group Chemical group 0.000 abstract 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 150000002431 hydrogen Chemical group 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004957 naphthylene group Chemical group 0.000 abstract 1
- 125000005562 phenanthrylene group Chemical group 0.000 abstract 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Paints Or Removers (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05105991 | 2005-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200710074A true TW200710074A (en) | 2007-03-16 |
Family
ID=35453417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095123894A TW200710074A (en) | 2005-07-01 | 2006-06-30 | Sulphonium salt initiators |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7901867B2 (https=) |
| EP (1) | EP1902019B1 (https=) |
| JP (1) | JP5081151B2 (https=) |
| KR (1) | KR101334046B1 (https=) |
| CN (1) | CN101213169A (https=) |
| AT (1) | ATE473209T1 (https=) |
| DE (1) | DE602006015319D1 (https=) |
| TW (1) | TW200710074A (https=) |
| WO (1) | WO2007003507A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI637938B (zh) * | 2016-05-11 | 2018-10-11 | Shin-Etsu Chemical Co., Ltd. | 新穎鋶化合物及其製造方法、光阻組成物及圖案形成方法 |
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|---|---|---|---|---|
| JP4866606B2 (ja) * | 2005-12-28 | 2012-02-01 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| JP4695996B2 (ja) * | 2006-02-27 | 2011-06-08 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| US8012672B2 (en) | 2006-10-04 | 2011-09-06 | Basf Se | Sulphonium salt photoinitiators |
| KR101545931B1 (ko) * | 2007-08-07 | 2015-08-20 | 가부시키가이샤 아데카 | 방향족 술포늄염 화합물 |
| EP2197869B1 (en) | 2007-10-10 | 2013-04-24 | Basf Se | Sulphonium salt initiators |
| WO2009047151A1 (en) | 2007-10-10 | 2009-04-16 | Basf Se | Sulphonium salt initiators |
| EP2197839B1 (en) * | 2007-10-10 | 2013-01-02 | Basf Se | Sulphonium salt initiators |
| US20110171569A1 (en) * | 2008-06-12 | 2011-07-14 | Yuichi Nishimae | Sulfonium derivatives and the use therof as latent acids |
| JP5385017B2 (ja) * | 2008-07-11 | 2014-01-08 | 信越化学工業株式会社 | レジストパターン形成方法及びフォトマスクの製造方法 |
| EP2349993B1 (en) | 2008-10-20 | 2012-12-12 | Basf Se | Sulfonium derivatives and the use therof as latent acids |
| WO2010066380A1 (en) * | 2008-12-12 | 2010-06-17 | Bayer Schering Pharma Aktiengesellschaft | Triaryl-sulphonium compounds, kit and methods for labeling positron emitting isotopes |
| EP2199856B1 (en) | 2008-12-18 | 2013-08-07 | Agfa Graphics N.V. | Cationic radiation curable compositions |
| JP5576139B2 (ja) * | 2009-02-20 | 2014-08-20 | サンアプロ株式会社 | スルホニウム塩，光酸発生剤，光硬化性組成物，及びその硬化体 |
| CN102317258B (zh) * | 2009-02-20 | 2014-06-04 | 三亚普罗股份有限公司 | 锍盐、光酸产生剂及光敏性树脂组合物 |
| JP5448157B2 (ja) * | 2009-03-13 | 2014-03-19 | 株式会社Ａｄｅｋａ | 芳香族スルホニウム塩化合物 |
| JP5491913B2 (ja) * | 2009-03-18 | 2014-05-14 | サンアプロ株式会社 | 化学増幅型ポジ型フォトレジスト組成物及びレジストパターンの製造方法 |
| WO2011052327A1 (ja) * | 2009-10-26 | 2011-05-05 | 株式会社Adeka | 芳香族スルホニウム塩化合物 |
| JP5543757B2 (ja) * | 2009-11-11 | 2014-07-09 | サンアプロ株式会社 | スルホニウム塩，光酸発生剤，硬化性組成物及びポジ型フォトレジスト組成物 |
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| JP5849350B2 (ja) | 2009-12-17 | 2016-01-27 | ディーエスエム アイピー アセッツ ビー．ブイ． | 基材を用いた積層造形法 |
| CN102725689B (zh) | 2010-01-22 | 2014-10-08 | 帝斯曼知识产权资产管理有限公司 | 能固化成具有选择性视觉效果的层的液体可辐射固化树脂及其使用方法 |
| US8871423B2 (en) * | 2010-01-29 | 2014-10-28 | Samsung Electronics Co., Ltd. | Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same |
| EP2552927B1 (en) | 2010-03-30 | 2019-03-13 | SurModics, Inc. | Degradable photo-crosslinkers |
| US10315987B2 (en) | 2010-12-13 | 2019-06-11 | Surmodics, Inc. | Photo-crosslinker |
| JP5787720B2 (ja) | 2010-12-16 | 2015-09-30 | キヤノン株式会社 | 感光性ネガ型樹脂組成物 |
| KR101229312B1 (ko) * | 2011-01-03 | 2013-02-04 | 금호석유화학 주식회사 | 술포늄 화합물, 광산발생제 및 이의 제조방법 |
| US8816211B2 (en) * | 2011-02-14 | 2014-08-26 | Eastman Kodak Company | Articles with photocurable and photocured compositions |
| EP2502728B1 (en) | 2011-03-23 | 2017-01-04 | DSM IP Assets B.V. | Lightweight and high strength three-dimensional articles producible by additive fabrication processes |
| US9631040B2 (en) | 2012-05-18 | 2017-04-25 | Ndsu Research Foundation | Functionalized amphiphilic plant-based polymers |
| WO2013173734A1 (en) | 2012-05-18 | 2013-11-21 | Ndsu Research Foundation | Functionalized amphiphilic plant-based polymers |
| JP5899068B2 (ja) * | 2012-06-28 | 2016-04-06 | 東京応化工業株式会社 | 厚膜用ポジ型レジスト組成物、厚膜レジストパターンの製造方法、接続端子の製造方法 |
| JP5830503B2 (ja) * | 2012-09-15 | 2015-12-09 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 酸発生剤化合物およびそれを含むフォトレジスト |
| JP5739497B2 (ja) * | 2012-09-15 | 2015-06-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 酸発生剤化合物およびそれを含むフォトレジスト |
| TWI573782B (zh) * | 2012-12-07 | 2017-03-11 | Ｄｓｐ五協食品＆化學品股份有限公司 | 新穎鋶鹽化合物、其製造方法及光酸產生劑 |
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| CN103642383B (zh) * | 2013-12-04 | 2016-04-20 | 江南大学 | 一种本征型光固化抗静电树脂的制备方法 |
| WO2015174471A1 (ja) * | 2014-05-13 | 2015-11-19 | 東洋合成工業株式会社 | オニウム塩、光酸発生剤、感光性樹脂組成物及びデバイスの製造方法 |
| JP6561937B2 (ja) * | 2016-08-05 | 2019-08-21 | 信越化学工業株式会社 | ネガ型レジスト組成物及びレジストパターン形成方法 |
| US10416558B2 (en) * | 2016-08-05 | 2019-09-17 | Shin-Etsu Chemical Co., Ltd. | Positive resist composition, resist pattern forming process, and photomask blank |
| CN107698477B (zh) | 2016-08-08 | 2020-05-12 | 常州强力电子新材料股份有限公司 | 一种新型阳离子型光引发剂及其制备方法和应用 |
| CN109456242B (zh) | 2017-09-06 | 2021-02-12 | 常州强力电子新材料股份有限公司 | 硫鎓盐光引发剂、其制备方法、包含其的光固化组合物及其应用 |
| KR20210005707A (ko) | 2018-05-03 | 2021-01-14 | 디에스엠 아이피 어셋츠 비.브이. | 적층 제조를 통하여 생성된 광-제작된 물품을 후처리하는 방법 |
| JP7499071B2 (ja) * | 2019-06-04 | 2024-06-13 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法並びに塩の製造方法 |
| CN114901638B (zh) * | 2020-03-17 | 2024-10-29 | 三亚普罗股份有限公司 | 锍盐、光酸产生剂、固化性组合物和抗蚀剂组合物 |
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| CA2452566C (en) | 2001-07-19 | 2011-08-23 | Lamberti Spa | Sulfonium salts, methods for their preparation and use thereof as photoinitiators for radiation curable systems |
| JP2003255542A (ja) * | 2002-03-04 | 2003-09-10 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| GB0204467D0 (en) | 2002-02-26 | 2002-04-10 | Coates Brothers Plc | Novel fused ring compounds, and their use as cationic photoinitiators |
| EP1516230B1 (en) | 2002-06-26 | 2015-12-30 | FujiFilm Electronic Materials USA, Inc. | Photosensitive compositions |
| JP5131888B2 (ja) * | 2002-09-25 | 2013-01-30 | 株式会社Ａｄｅｋａ | 新規な芳香族スルホニウム塩化合物、これからなる光酸発生剤およびこれを含む光重合性組成物、光学的立体造形用樹脂組成物並びに光学的立体造形法 |
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| JP4115309B2 (ja) * | 2003-03-24 | 2008-07-09 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP4399192B2 (ja) * | 2003-06-03 | 2010-01-13 | 富士フイルム株式会社 | 感光性組成物 |
-
2006
- 2006-06-21 KR KR1020087002868A patent/KR101334046B1/ko active Active
- 2006-06-21 EP EP06777379A patent/EP1902019B1/en active Active
- 2006-06-21 DE DE602006015319T patent/DE602006015319D1/de active Active
- 2006-06-21 CN CNA2006800238530A patent/CN101213169A/zh active Pending
- 2006-06-21 US US11/922,444 patent/US7901867B2/en active Active
- 2006-06-21 WO PCT/EP2006/063378 patent/WO2007003507A1/en not_active Ceased
- 2006-06-21 JP JP2008518789A patent/JP5081151B2/ja active Active
- 2006-06-21 AT AT06777379T patent/ATE473209T1/de not_active IP Right Cessation
- 2006-06-30 TW TW095123894A patent/TW200710074A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI637938B (zh) * | 2016-05-11 | 2018-10-11 | Shin-Etsu Chemical Co., Ltd. | 新穎鋶化合物及其製造方法、光阻組成物及圖案形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE602006015319D1 (de) | 2010-08-19 |
| JP5081151B2 (ja) | 2012-11-21 |
| EP1902019B1 (en) | 2010-07-07 |
| WO2007003507A1 (en) | 2007-01-11 |
| CN101213169A (zh) | 2008-07-02 |
| KR20080030082A (ko) | 2008-04-03 |
| KR101334046B1 (ko) | 2013-12-02 |
| US7901867B2 (en) | 2011-03-08 |
| EP1902019A1 (en) | 2008-03-26 |
| US20090208872A1 (en) | 2009-08-20 |
| JP2009501148A (ja) | 2009-01-15 |
| ATE473209T1 (de) | 2010-07-15 |
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