ATE473209T1 - Sulfoniumsalzinitiatoren - Google Patents
SulfoniumsalzinitiatorenInfo
- Publication number
- ATE473209T1 ATE473209T1 AT06777379T AT06777379T ATE473209T1 AT E473209 T1 ATE473209 T1 AT E473209T1 AT 06777379 T AT06777379 T AT 06777379T AT 06777379 T AT06777379 T AT 06777379T AT E473209 T1 ATE473209 T1 AT E473209T1
- Authority
- AT
- Austria
- Prior art keywords
- c20alkyl
- phenanthryl
- anthryl
- naphthyl
- biphenylyl
- Prior art date
Links
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 title 1
- 239000003999 initiator Substances 0.000 title 1
- -1 biphenylyl Chemical group 0.000 abstract 5
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 abstract 4
- 125000005561 phenanthryl group Chemical group 0.000 abstract 4
- 125000001624 naphthyl group Chemical group 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
- 229910052717 sulfur Inorganic materials 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 150000001450 anions Chemical class 0.000 abstract 1
- 125000004653 anthracenylene group Chemical group 0.000 abstract 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 150000002431 hydrogen Chemical group 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004957 naphthylene group Chemical group 0.000 abstract 1
- 125000005562 phenanthrylene group Chemical group 0.000 abstract 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Paints Or Removers (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05105991 | 2005-07-01 | ||
| PCT/EP2006/063378 WO2007003507A1 (en) | 2005-07-01 | 2006-06-21 | Sulphonium salt initiators |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE473209T1 true ATE473209T1 (de) | 2010-07-15 |
Family
ID=35453417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06777379T ATE473209T1 (de) | 2005-07-01 | 2006-06-21 | Sulfoniumsalzinitiatoren |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7901867B2 (https=) |
| EP (1) | EP1902019B1 (https=) |
| JP (1) | JP5081151B2 (https=) |
| KR (1) | KR101334046B1 (https=) |
| CN (1) | CN101213169A (https=) |
| AT (1) | ATE473209T1 (https=) |
| DE (1) | DE602006015319D1 (https=) |
| TW (1) | TW200710074A (https=) |
| WO (1) | WO2007003507A1 (https=) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4866606B2 (ja) * | 2005-12-28 | 2012-02-01 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| JP4695996B2 (ja) * | 2006-02-27 | 2011-06-08 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| CN101522613B (zh) | 2006-10-04 | 2013-03-06 | 西巴控股有限公司 | 锍盐光引发剂 |
| US8227624B2 (en) * | 2007-08-07 | 2012-07-24 | Adeka Corporation | Aromatic sulfonium salt compound |
| KR101599562B1 (ko) * | 2007-10-10 | 2016-03-03 | 바스프 에스이 | 술포늄 염 개시제 |
| CN101952269B (zh) * | 2007-10-10 | 2014-06-25 | 巴斯夫欧洲公司 | 锍盐引发剂 |
| CN101952248B (zh) | 2007-10-10 | 2014-04-16 | 巴斯夫欧洲公司 | 锍盐引发剂 |
| KR20110025211A (ko) * | 2008-06-12 | 2011-03-09 | 바스프 에스이 | 술포늄 유도체 및 잠재성 산으로서의 그의 용도 |
| JP5385017B2 (ja) * | 2008-07-11 | 2014-01-08 | 信越化学工業株式会社 | レジストパターン形成方法及びフォトマスクの製造方法 |
| JP5721630B2 (ja) * | 2008-10-20 | 2015-05-20 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | スルホニウム誘導体および潜在酸としてのその使用 |
| WO2010066380A1 (en) * | 2008-12-12 | 2010-06-17 | Bayer Schering Pharma Aktiengesellschaft | Triaryl-sulphonium compounds, kit and methods for labeling positron emitting isotopes |
| EP2199856B1 (en) | 2008-12-18 | 2013-08-07 | Agfa Graphics N.V. | Cationic radiation curable compositions |
| KR101700980B1 (ko) * | 2009-02-20 | 2017-01-31 | 산아프로 가부시키가이샤 | 술포늄염, 광산 발생제 및 감광성 수지 조성물 |
| JP5576139B2 (ja) * | 2009-02-20 | 2014-08-20 | サンアプロ株式会社 | スルホニウム塩，光酸発生剤，光硬化性組成物，及びその硬化体 |
| JP5448157B2 (ja) * | 2009-03-13 | 2014-03-19 | 株式会社Ａｄｅｋａ | 芳香族スルホニウム塩化合物 |
| JP5491913B2 (ja) * | 2009-03-18 | 2014-05-14 | サンアプロ株式会社 | 化学増幅型ポジ型フォトレジスト組成物及びレジストパターンの製造方法 |
| CN102471255B (zh) * | 2009-10-26 | 2015-06-03 | 株式会社艾迪科 | 芳香族锍盐化合物 |
| JP5543757B2 (ja) * | 2009-11-11 | 2014-07-09 | サンアプロ株式会社 | スルホニウム塩，光酸発生剤，硬化性組成物及びポジ型フォトレジスト組成物 |
| WO2011060293A1 (en) * | 2009-11-12 | 2011-05-19 | Ndsu Research Foundation | Polymers derived from plant oil |
| US9382352B2 (en) | 2009-11-12 | 2016-07-05 | Ndsu Research Foundation | Polymers derived from plant oil |
| CN106125509B (zh) | 2009-12-17 | 2019-12-17 | 帝斯曼知识产权资产管理有限公司 | 用于加成法制造的可led固化的液体树脂组合物 |
| CN102725689B (zh) | 2010-01-22 | 2014-10-08 | 帝斯曼知识产权资产管理有限公司 | 能固化成具有选择性视觉效果的层的液体可辐射固化树脂及其使用方法 |
| US8871423B2 (en) * | 2010-01-29 | 2014-10-28 | Samsung Electronics Co., Ltd. | Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same |
| WO2011123441A1 (en) | 2010-03-30 | 2011-10-06 | Surmodics, Inc. | Degradable photo-crosslinker |
| US10315987B2 (en) | 2010-12-13 | 2019-06-11 | Surmodics, Inc. | Photo-crosslinker |
| JP5787720B2 (ja) * | 2010-12-16 | 2015-09-30 | キヤノン株式会社 | 感光性ネガ型樹脂組成物 |
| KR101229312B1 (ko) * | 2011-01-03 | 2013-02-04 | 금호석유화학 주식회사 | 술포늄 화합물, 광산발생제 및 이의 제조방법 |
| US8816211B2 (en) * | 2011-02-14 | 2014-08-26 | Eastman Kodak Company | Articles with photocurable and photocured compositions |
| EP2502728B1 (en) | 2011-03-23 | 2017-01-04 | DSM IP Assets B.V. | Lightweight and high strength three-dimensional articles producible by additive fabrication processes |
| WO2013173734A1 (en) | 2012-05-18 | 2013-11-21 | Ndsu Research Foundation | Functionalized amphiphilic plant-based polymers |
| US9631040B2 (en) | 2012-05-18 | 2017-04-25 | Ndsu Research Foundation | Functionalized amphiphilic plant-based polymers |
| JP5899068B2 (ja) * | 2012-06-28 | 2016-04-06 | 東京応化工業株式会社 | 厚膜用ポジ型レジスト組成物、厚膜レジストパターンの製造方法、接続端子の製造方法 |
| TWI498675B (zh) * | 2012-09-15 | 2015-09-01 | 羅門哈斯電子材料有限公司 | 酸產生劑化合物及含該化合物之光阻劑 |
| JP5739497B2 (ja) * | 2012-09-15 | 2015-06-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 酸発生剤化合物およびそれを含むフォトレジスト |
| US9465288B2 (en) * | 2012-12-07 | 2016-10-11 | Dsp Gokyo Food & Chemical Co., Ltd. | Sulfonium salt compound, method for producing the same, and photoacid generator |
| US9834626B2 (en) | 2013-01-15 | 2017-12-05 | Ndsu Research Foundation | Plant oil-based materials |
| CN103642383B (zh) * | 2013-12-04 | 2016-04-20 | 江南大学 | 一种本征型光固化抗静电树脂的制备方法 |
| WO2015174471A1 (ja) * | 2014-05-13 | 2015-11-19 | 東洋合成工業株式会社 | オニウム塩、光酸発生剤、感光性樹脂組成物及びデバイスの製造方法 |
| JP6583136B2 (ja) * | 2016-05-11 | 2019-10-02 | 信越化学工業株式会社 | 新規スルホニウム化合物及びその製造方法、レジスト組成物、並びにパターン形成方法 |
| US10416558B2 (en) * | 2016-08-05 | 2019-09-17 | Shin-Etsu Chemical Co., Ltd. | Positive resist composition, resist pattern forming process, and photomask blank |
| JP6561937B2 (ja) * | 2016-08-05 | 2019-08-21 | 信越化学工業株式会社 | ネガ型レジスト組成物及びレジストパターン形成方法 |
| CN107698477B (zh) | 2016-08-08 | 2020-05-12 | 常州强力电子新材料股份有限公司 | 一种新型阳离子型光引发剂及其制备方法和应用 |
| CN109456242B (zh) | 2017-09-06 | 2021-02-12 | 常州强力电子新材料股份有限公司 | 硫鎓盐光引发剂、其制备方法、包含其的光固化组合物及其应用 |
| JP2021522086A (ja) | 2018-05-03 | 2021-08-30 | ディーエスエム アイピー アセッツ ビー．ブイ．Ｄｓｍ Ｉｐ Ａｓｓｅｔｓ Ｂ．Ｖ． | 積層造形によって作られる光造形物品の後加工方法 |
| JP7499071B2 (ja) * | 2019-06-04 | 2024-06-13 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法並びに塩の製造方法 |
| WO2021186846A1 (ja) * | 2020-03-17 | 2021-09-23 | サンアプロ株式会社 | スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物 |
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|---|---|---|---|---|
| ZA805273B (en) * | 1979-09-28 | 1981-11-25 | Gen Electric | Process of deep section curing photocurable compositions |
| JPH107649A (ja) * | 1996-06-18 | 1998-01-13 | Nippon Kayaku Co Ltd | 光重合開始剤、これを含有するエネルギー線硬化性組成物及びその硬化物 |
| KR100279497B1 (ko) * | 1998-07-16 | 2001-02-01 | 박찬구 | 술포늄 염의 제조방법 |
| TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
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| US6723483B1 (en) * | 1999-12-27 | 2004-04-20 | Wako Pure Chemical Industries, Ltd. | Sulfonium salt compounds |
| JP3972568B2 (ja) * | 2000-05-09 | 2007-09-05 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物及びスルホニウム塩 |
| JP4177952B2 (ja) * | 2000-05-22 | 2008-11-05 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| TWI286664B (en) * | 2000-06-23 | 2007-09-11 | Sumitomo Chemical Co | Chemical amplification type positive resist composition and sulfonium salt |
| JP4150509B2 (ja) * | 2000-11-20 | 2008-09-17 | 富士フイルム株式会社 | ポジ型感光性組成物 |
| JP4262402B2 (ja) * | 2000-10-20 | 2009-05-13 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| US6749987B2 (en) * | 2000-10-20 | 2004-06-15 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| JP2002202605A (ja) * | 2000-12-28 | 2002-07-19 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| ES2329345T3 (es) * | 2001-07-19 | 2009-11-25 | Lamberti Spa | Sales de sulfonio como fotoiniciadores para sistemas que se pueden curar por radiacion. |
| JP2003255542A (ja) * | 2002-03-04 | 2003-09-10 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| GB0204467D0 (en) | 2002-02-26 | 2002-04-10 | Coates Brothers Plc | Novel fused ring compounds, and their use as cationic photoinitiators |
| EP1516230B1 (en) * | 2002-06-26 | 2015-12-30 | FujiFilm Electronic Materials USA, Inc. | Photosensitive compositions |
| JP4253486B2 (ja) * | 2002-09-25 | 2009-04-15 | 富士フイルム株式会社 | ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法 |
| AU2003268671A1 (en) * | 2002-09-25 | 2004-04-19 | Asahi Denka Co.Ltd. | Novel aromatic sulfonium salt compound, photo-acid generator comprising the same and photopolymerizable composition containing the same, resin composition for optical three-dimensional shaping, and method of optically forming three-dimensional shape |
| JP4115309B2 (ja) | 2003-03-24 | 2008-07-09 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP4399192B2 (ja) * | 2003-06-03 | 2010-01-13 | 富士フイルム株式会社 | 感光性組成物 |
-
2006
- 2006-06-21 EP EP06777379A patent/EP1902019B1/en active Active
- 2006-06-21 DE DE602006015319T patent/DE602006015319D1/de active Active
- 2006-06-21 CN CNA2006800238530A patent/CN101213169A/zh active Pending
- 2006-06-21 KR KR1020087002868A patent/KR101334046B1/ko active Active
- 2006-06-21 AT AT06777379T patent/ATE473209T1/de not_active IP Right Cessation
- 2006-06-21 US US11/922,444 patent/US7901867B2/en active Active
- 2006-06-21 JP JP2008518789A patent/JP5081151B2/ja active Active
- 2006-06-21 WO PCT/EP2006/063378 patent/WO2007003507A1/en not_active Ceased
- 2006-06-30 TW TW095123894A patent/TW200710074A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080030082A (ko) | 2008-04-03 |
| US7901867B2 (en) | 2011-03-08 |
| US20090208872A1 (en) | 2009-08-20 |
| DE602006015319D1 (de) | 2010-08-19 |
| CN101213169A (zh) | 2008-07-02 |
| KR101334046B1 (ko) | 2013-12-02 |
| EP1902019B1 (en) | 2010-07-07 |
| TW200710074A (en) | 2007-03-16 |
| JP2009501148A (ja) | 2009-01-15 |
| JP5081151B2 (ja) | 2012-11-21 |
| EP1902019A1 (en) | 2008-03-26 |
| WO2007003507A1 (en) | 2007-01-11 |
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