JP5081151B2 - スルホニウム塩開始剤 - Google Patents

スルホニウム塩開始剤 Download PDF

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Publication number
JP5081151B2
JP5081151B2 JP2008518789A JP2008518789A JP5081151B2 JP 5081151 B2 JP5081151 B2 JP 5081151B2 JP 2008518789 A JP2008518789 A JP 2008518789A JP 2008518789 A JP2008518789 A JP 2008518789A JP 5081151 B2 JP5081151 B2 JP 5081151B2
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JP
Japan
Prior art keywords
alkyl
acid
group
compounds
phenyl
Prior art date
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JP2008518789A
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English (en)
Japanese (ja)
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JP2009501148A5 (https=
JP2009501148A (ja
Inventor
ヴォルフ,ジャン−ピエール
ラティカ,アッティラ
ビルボーム,ジャン−リュク
イルク,シュテファン
ハヨ,パスカル
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BASF Schweiz AG
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Ciba Holding AG
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Publication of JP2009501148A5 publication Critical patent/JP2009501148A5/ja
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Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01Sulfonic acids
    • C07C309/02Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D209/00Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56Ring systems containing three or more rings
    • C07D209/80[b, c]- or [b, d]-condensed
    • C07D209/82Carbazoles; Hydrogenated carbazoles
    • C07D209/88Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
JP2008518789A 2005-07-01 2006-06-21 スルホニウム塩開始剤 Active JP5081151B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05105991 2005-07-01
EP05105991.3 2005-07-01
PCT/EP2006/063378 WO2007003507A1 (en) 2005-07-01 2006-06-21 Sulphonium salt initiators

Publications (3)

Publication Number Publication Date
JP2009501148A JP2009501148A (ja) 2009-01-15
JP2009501148A5 JP2009501148A5 (https=) 2009-08-06
JP5081151B2 true JP5081151B2 (ja) 2012-11-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518789A Active JP5081151B2 (ja) 2005-07-01 2006-06-21 スルホニウム塩開始剤

Country Status (9)

Country Link
US (1) US7901867B2 (https=)
EP (1) EP1902019B1 (https=)
JP (1) JP5081151B2 (https=)
KR (1) KR101334046B1 (https=)
CN (1) CN101213169A (https=)
AT (1) ATE473209T1 (https=)
DE (1) DE602006015319D1 (https=)
TW (1) TW200710074A (https=)
WO (1) WO2007003507A1 (https=)

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JP4695996B2 (ja) * 2006-02-27 2011-06-08 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
CN101522613B (zh) 2006-10-04 2013-03-06 西巴控股有限公司 锍盐光引发剂
US8227624B2 (en) * 2007-08-07 2012-07-24 Adeka Corporation Aromatic sulfonium salt compound
KR101599562B1 (ko) * 2007-10-10 2016-03-03 바스프 에스이 술포늄 염 개시제
CN101952269B (zh) * 2007-10-10 2014-06-25 巴斯夫欧洲公司 锍盐引发剂
CN101952248B (zh) 2007-10-10 2014-04-16 巴斯夫欧洲公司 锍盐引发剂
KR20110025211A (ko) * 2008-06-12 2011-03-09 바스프 에스이 술포늄 유도체 및 잠재성 산으로서의 그의 용도
JP5385017B2 (ja) * 2008-07-11 2014-01-08 信越化学工業株式会社 レジストパターン形成方法及びフォトマスクの製造方法
JP5721630B2 (ja) * 2008-10-20 2015-05-20 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se スルホニウム誘導体および潜在酸としてのその使用
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Also Published As

Publication number Publication date
KR20080030082A (ko) 2008-04-03
US7901867B2 (en) 2011-03-08
US20090208872A1 (en) 2009-08-20
DE602006015319D1 (de) 2010-08-19
CN101213169A (zh) 2008-07-02
KR101334046B1 (ko) 2013-12-02
EP1902019B1 (en) 2010-07-07
TW200710074A (en) 2007-03-16
JP2009501148A (ja) 2009-01-15
ATE473209T1 (de) 2010-07-15
EP1902019A1 (en) 2008-03-26
WO2007003507A1 (en) 2007-01-11

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