CN101162755B - 半导体器件和制造半导体器件的方法 - Google Patents

半导体器件和制造半导体器件的方法 Download PDF

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Publication number
CN101162755B
CN101162755B CN2006101470283A CN200610147028A CN101162755B CN 101162755 B CN101162755 B CN 101162755B CN 2006101470283 A CN2006101470283 A CN 2006101470283A CN 200610147028 A CN200610147028 A CN 200610147028A CN 101162755 B CN101162755 B CN 101162755B
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CN
China
Prior art keywords
film
tmr
insulating film
interlayer insulating
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2006101470283A
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English (en)
Chinese (zh)
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CN101162755A (zh
Inventor
古田阳雄
松田亮史
上野修一
黑岩丈晴
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Renesas Electronics Corp
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Renesas Technology Corp
Renesas Electronics Corp
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Publication of CN101162755A publication Critical patent/CN101162755A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2006101470283A 2005-11-14 2006-11-13 半导体器件和制造半导体器件的方法 Expired - Fee Related CN101162755B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005328845 2005-11-14
JP328845/2005 2005-11-14
JP2006276259A JP5072012B2 (ja) 2005-11-14 2006-10-10 半導体装置の製造方法
JP276259/2006 2006-10-10

Related Child Applications (1)

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CN2011100485174A Division CN102157680B (zh) 2005-11-14 2006-11-13 半导体器件和制造半导体器件的方法

Publications (2)

Publication Number Publication Date
CN101162755A CN101162755A (zh) 2008-04-16
CN101162755B true CN101162755B (zh) 2011-04-13

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CN2006101470283A Expired - Fee Related CN101162755B (zh) 2005-11-14 2006-11-13 半导体器件和制造半导体器件的方法
CN2011100485174A Expired - Fee Related CN102157680B (zh) 2005-11-14 2006-11-13 半导体器件和制造半导体器件的方法

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Country Status (5)

Country Link
US (3) US7605420B2 (https=)
JP (1) JP5072012B2 (https=)
KR (1) KR101266656B1 (https=)
CN (2) CN101162755B (https=)
TW (1) TW200807775A (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009194210A (ja) 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP5107128B2 (ja) * 2008-04-23 2012-12-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009295737A (ja) 2008-06-04 2009-12-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP2010016031A (ja) * 2008-07-01 2010-01-21 Renesas Technology Corp 半導体記憶装置の製造方法
JP5203844B2 (ja) 2008-08-07 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
JP2012069607A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
EP2652791B1 (en) 2010-12-17 2017-03-01 Everspin Technologies, Inc. Magnetic random access memory integration having improved scaling
TWI445225B (zh) * 2011-11-07 2014-07-11 Voltafield Technology Corp 磁阻元件結構形成方法
US8790935B1 (en) * 2012-10-22 2014-07-29 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device with via integration
JP6177986B2 (ja) * 2013-03-15 2017-08-09 インテル・コーポレーション 埋め込まれた磁気トンネル接合を含む論理チップ
WO2015147875A1 (en) * 2014-03-28 2015-10-01 Intel Corporation Modulation of magnetic properties through implantation and associated structures
US9614143B2 (en) * 2015-06-09 2017-04-04 Qualcomm Incorporated De-integrated trench formation for advanced MRAM integration
US9666790B2 (en) 2015-07-17 2017-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
US10411068B2 (en) 2015-11-23 2019-09-10 Intel Corporation Electrical contacts for magnetoresistive random access memory devices
US9771261B1 (en) * 2016-03-17 2017-09-26 Texas Instruments Incorporated Selective patterning of an integrated fluxgate device
US12387772B2 (en) 2020-08-10 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for MRAM devices with a slot via
US12310246B2 (en) * 2022-05-31 2025-05-20 Allegro Microsystems, Llc Fabricating an electroconductive contact on a top surface of a tunneling magnetoresistance element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174737B1 (en) * 1998-08-31 2001-01-16 Motorola, Inc. Magnetic random access memory and fabricating method thereof
CN1542844A (zh) * 2003-03-24 2004-11-03 ��ʽ���綫֥ 具有磁阻元件的半导体存储装置及其制造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19701009A1 (de) * 1997-01-14 1998-07-16 Leonhard Feiler Verfahren zur Herstellung von Perylen-3,4-dicarbonsäureanhydriden
JP4309075B2 (ja) 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
JP2003086773A (ja) 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置およびその製造方法
JP3843827B2 (ja) 2001-12-07 2006-11-08 ヤマハ株式会社 磁気トンネル接合素子とその製法
JP3888168B2 (ja) 2002-01-21 2007-02-28 ヤマハ株式会社 磁気トンネル接合素子の製法
JP2003243630A (ja) * 2002-02-18 2003-08-29 Sony Corp 磁気メモリ装置およびその製造方法
US6627932B1 (en) * 2002-04-11 2003-09-30 Micron Technology, Inc. Magnetoresistive memory device
JP2004055918A (ja) 2002-07-22 2004-02-19 Toshiba Corp 磁気記憶装置及びその製造方法
US20040032010A1 (en) * 2002-08-14 2004-02-19 Kools Jacques Constant Stefan Amorphous soft magnetic shielding and keeper for MRAM devices
JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
JP2004193282A (ja) 2002-12-10 2004-07-08 Renesas Technology Corp 不揮発性半導体記憶装置
JP2004235443A (ja) * 2003-01-30 2004-08-19 Renesas Technology Corp 薄膜磁性体記憶装置およびその製造方法
JP4618989B2 (ja) * 2003-02-18 2011-01-26 三菱電機株式会社 磁気記憶半導体装置
JP3831353B2 (ja) 2003-03-27 2006-10-11 株式会社東芝 磁気ランダムアクセスメモリ
JP2004296859A (ja) 2003-03-27 2004-10-21 Renesas Technology Corp 磁気記録素子及び磁気記録素子の製造方法
JP4534441B2 (ja) * 2003-07-25 2010-09-01 Ｔｄｋ株式会社 磁気記憶セル及びこれを用いた磁気メモリデバイス
JP4074281B2 (ja) * 2004-09-14 2008-04-09 株式会社東芝 磁気ランダムアクセスメモリ
JP2006261592A (ja) * 2005-03-18 2006-09-28 Fujitsu Ltd 磁気抵抗効果素子及びその製造方法
US7122386B1 (en) * 2005-09-21 2006-10-17 Magic Technologies, Inc. Method of fabricating contact pad for magnetic random access memory
JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174737B1 (en) * 1998-08-31 2001-01-16 Motorola, Inc. Magnetic random access memory and fabricating method thereof
CN1542844A (zh) * 2003-03-24 2004-11-03 ��ʽ���綫֥ 具有磁阻元件的半导体存储装置及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
全文.

Also Published As

Publication number Publication date
US7605420B2 (en) 2009-10-20
KR101266656B1 (ko) 2013-05-22
US7973376B2 (en) 2011-07-05
US20110204458A1 (en) 2011-08-25
US20090315128A1 (en) 2009-12-24
JP5072012B2 (ja) 2012-11-14
TW200807775A (en) 2008-02-01
KR20070051708A (ko) 2007-05-18
CN102157680B (zh) 2013-03-20
CN102157680A (zh) 2011-08-17
CN101162755A (zh) 2008-04-16
US20070108543A1 (en) 2007-05-17
JP2007158301A (ja) 2007-06-21

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