CN100499168C - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN100499168C CN100499168C CNB2007101012260A CN200710101226A CN100499168C CN 100499168 C CN100499168 C CN 100499168C CN B2007101012260 A CNB2007101012260 A CN B2007101012260A CN 200710101226 A CN200710101226 A CN 200710101226A CN 100499168 C CN100499168 C CN 100499168C
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- semiconductor device
- internal stress
- gate electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000012535 impurity Substances 0.000 claims description 59
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 35
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 27
- 239000002800 charge carrier Substances 0.000 claims description 22
- 230000006835 compression Effects 0.000 claims description 22
- 238000007906 compression Methods 0.000 claims description 22
- 239000011229 interlayer Substances 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 270
- 230000000694 effects Effects 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000001259 photo etching Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 238000000605 extraction Methods 0.000 description 6
- 239000012467 final product Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003170335 | 2003-06-16 | ||
JP2003170335A JP4557508B2 (ja) | 2003-06-16 | 2003-06-16 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100592710A Division CN1317772C (zh) | 2003-06-16 | 2004-06-15 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101038934A CN101038934A (zh) | 2007-09-19 |
CN100499168C true CN100499168C (zh) | 2009-06-10 |
Family
ID=33509118
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100592710A Expired - Lifetime CN1317772C (zh) | 2003-06-16 | 2004-06-15 | 半导体器件及其制造方法 |
CNB2007101012260A Expired - Lifetime CN100499168C (zh) | 2003-06-16 | 2004-06-15 | 半导体器件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100592710A Expired - Lifetime CN1317772C (zh) | 2003-06-16 | 2004-06-15 | 半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (5) | US7205615B2 (zh) |
JP (1) | JP4557508B2 (zh) |
CN (2) | CN1317772C (zh) |
Families Citing this family (81)
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JP4557508B2 (ja) * | 2003-06-16 | 2010-10-06 | パナソニック株式会社 | 半導体装置 |
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JP4994581B2 (ja) * | 2004-06-29 | 2012-08-08 | 富士通セミコンダクター株式会社 | 半導体装置 |
US8669145B2 (en) * | 2004-06-30 | 2014-03-11 | International Business Machines Corporation | Method and structure for strained FinFET devices |
JP2006041118A (ja) * | 2004-07-26 | 2006-02-09 | Toshiba Corp | 半導体装置及びその製造方法 |
US7402535B2 (en) * | 2004-07-28 | 2008-07-22 | Texas Instruments Incorporated | Method of incorporating stress into a transistor channel by use of a backside layer |
DE102004042167B4 (de) * | 2004-08-31 | 2009-04-02 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Ausbilden einer Halbleiterstruktur, die Transistorelemente mit unterschiedlich verspannten Kanalgebieten umfasst, und entsprechende Halbleiterstruktur |
US7736964B2 (en) | 2004-11-22 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method for manufacturing the same |
US7335544B2 (en) * | 2004-12-15 | 2008-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making MOSFET device with localized stressor |
US7195969B2 (en) * | 2004-12-31 | 2007-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained channel CMOS device with fully silicided gate electrode |
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JP4982958B2 (ja) * | 2005-03-24 | 2012-07-25 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
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EP1717864A1 (en) * | 2005-04-27 | 2006-11-02 | STMicroelectronics ( Crolles 2) SAS | Method for managing the stress configuration in the channel of a MOS transistor, and corresponding integrated circuit. |
DE102005020133B4 (de) * | 2005-04-29 | 2012-03-29 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung eines Transistorelements mit Technik zur Herstellung einer Kontaktisolationsschicht mit verbesserter Spannungsübertragungseffizienz |
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US7586158B2 (en) * | 2005-07-07 | 2009-09-08 | Infineon Technologies Ag | Piezoelectric stress liner for bulk and SOI |
US7488670B2 (en) * | 2005-07-13 | 2009-02-10 | Infineon Technologies Ag | Direct channel stress |
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JP5114881B2 (ja) * | 2005-07-26 | 2013-01-09 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
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JP4774882B2 (ja) * | 2005-09-20 | 2011-09-14 | ソニー株式会社 | 絶縁ゲート電界効果トランジスタ及びその製造方法 |
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WO2007046150A1 (ja) * | 2005-10-21 | 2007-04-26 | Fujitsu Limited | フィン型半導体装置及びその製造方法 |
JP4829591B2 (ja) * | 2005-10-25 | 2011-12-07 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP4768399B2 (ja) * | 2005-10-31 | 2011-09-07 | 株式会社東芝 | 半導体装置 |
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KR100834737B1 (ko) * | 2006-08-04 | 2008-06-05 | 삼성전자주식회사 | 반도체 집적 회로 장치의 제조 방법 및 그에 의해 제조된반도체 집적 회로 장치 |
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JP4764160B2 (ja) * | 2005-12-21 | 2011-08-31 | 株式会社東芝 | 半導体装置 |
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US7417289B2 (en) | 2008-08-26 |
CN1574399A (zh) | 2005-02-02 |
JP2005005633A (ja) | 2005-01-06 |
US20090050981A1 (en) | 2009-02-26 |
CN1317772C (zh) | 2007-05-23 |
US8383486B2 (en) | 2013-02-26 |
CN101038934A (zh) | 2007-09-19 |
US20070194388A1 (en) | 2007-08-23 |
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