FR2888990B1 - Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique - Google Patents
Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectriqueInfo
- Publication number
- FR2888990B1 FR2888990B1 FR0552279A FR0552279A FR2888990B1 FR 2888990 B1 FR2888990 B1 FR 2888990B1 FR 0552279 A FR0552279 A FR 0552279A FR 0552279 A FR0552279 A FR 0552279A FR 2888990 B1 FR2888990 B1 FR 2888990B1
- Authority
- FR
- France
- Prior art keywords
- piezoelectric layer
- microelectronic device
- transistors surrounded
- transistors
- surrounded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004377 microelectronic Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0552279A FR2888990B1 (fr) | 2005-07-22 | 2005-07-22 | Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique |
US11/996,406 US7968945B2 (en) | 2005-07-22 | 2006-06-21 | Microelectronic device provided with transistors coated with a piezoelectric layer |
PCT/EP2006/064491 WO2007010029A1 (fr) | 2005-07-22 | 2006-07-21 | Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique |
EP06792540A EP1908113A1 (fr) | 2005-07-22 | 2006-07-21 | Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0552279A FR2888990B1 (fr) | 2005-07-22 | 2005-07-22 | Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2888990A1 FR2888990A1 (fr) | 2007-01-26 |
FR2888990B1 true FR2888990B1 (fr) | 2007-09-07 |
Family
ID=36586101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0552279A Active FR2888990B1 (fr) | 2005-07-22 | 2005-07-22 | Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique |
Country Status (4)
Country | Link |
---|---|
US (1) | US7968945B2 (fr) |
EP (1) | EP1908113A1 (fr) |
FR (1) | FR2888990B1 (fr) |
WO (1) | WO2007010029A1 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2916305B1 (fr) | 2007-05-15 | 2009-10-23 | Commissariat Energie Atomique | Dispositif a transistor a canal contraint. |
FR2945669B1 (fr) * | 2009-05-14 | 2011-12-30 | Commissariat Energie Atomique | Transistor organique a effet de champ |
JP5564117B2 (ja) * | 2009-11-06 | 2014-07-30 | ソニー コーポレイション オブ アメリカ | 立体オーバーレイオフセットの作成及び編集 |
US20110248322A1 (en) * | 2010-04-12 | 2011-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Piezoelectric Gate-Induced Strain |
CN102790084B (zh) * | 2011-05-16 | 2016-03-16 | 中国科学院上海微系统与信息技术研究所 | 锗和iii-v混合共平面的soi半导体结构及其制备方法 |
CN102790054B (zh) * | 2011-05-16 | 2015-09-16 | 中国科学院上海微系统与信息技术研究所 | 锗和iii-v混合共平面的半导体结构及其制备方法 |
KR20130014200A (ko) * | 2011-07-29 | 2013-02-07 | 삼성전자주식회사 | 저항 변화 물질을 포함하는 반도체 소자 및 그 제조 방법 |
US8841818B2 (en) | 2011-08-12 | 2014-09-23 | Massachusetts Institute Of Technology | Piezoelectric electromechanical devices |
JP2013179235A (ja) * | 2012-02-29 | 2013-09-09 | Toshiba Corp | 半導体装置 |
US20140084234A1 (en) * | 2012-09-27 | 2014-03-27 | Apple Inc. | Post manufacturing strain manipulation in semiconductor devices |
US9058868B2 (en) | 2012-12-19 | 2015-06-16 | International Business Machines Corporation | Piezoelectronic memory |
US9064959B2 (en) * | 2013-03-13 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for forming a CMOS device |
US20140264632A1 (en) * | 2013-03-18 | 2014-09-18 | Globalfoundries Inc. | Semiconductor structure including a transistor having a layer of a stress-creating material and method for the formation thereof |
US9941472B2 (en) | 2014-03-10 | 2018-04-10 | International Business Machines Corporation | Piezoelectronic device with novel force amplification |
US9251884B2 (en) | 2014-03-24 | 2016-02-02 | International Business Machines Corporation | Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence |
US9287489B1 (en) | 2014-10-31 | 2016-03-15 | International Business Machines Corporation | Piezoelectronic transistor with co-planar common and gate electrodes |
CN105974637B (zh) * | 2016-07-22 | 2019-03-12 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置及其触摸位置检测方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01120072A (ja) * | 1987-11-02 | 1989-05-12 | Nec Corp | アバランシェ注入型電界効果トランジスタ |
JPH0487376A (ja) * | 1990-07-31 | 1992-03-19 | Clarion Co Ltd | 圧力センサ |
US5666305A (en) * | 1993-03-29 | 1997-09-09 | Olympus Optical Co., Ltd. | Method of driving ferroelectric gate transistor memory cell |
US5883419A (en) * | 1994-11-17 | 1999-03-16 | Electronics And Telecommunications Research Institute | Ultra-thin MO-C film transistor |
JPH08181288A (ja) * | 1994-12-21 | 1996-07-12 | Nippon Telegr & Teleph Corp <Ntt> | 強誘電体記憶装置およびその製造方法 |
JP2000183295A (ja) * | 1998-12-16 | 2000-06-30 | Matsushita Electronics Industry Corp | 半導体記憶装置及びその製造方法 |
DE19931124C1 (de) * | 1999-07-06 | 2001-02-15 | Infineon Technologies Ag | Speicherzellenanordnung mit einem ferroelektrischen Transistor |
DE19946437A1 (de) * | 1999-09-28 | 2001-04-12 | Infineon Technologies Ag | Ferroelektrischer Transistor |
JP4557508B2 (ja) * | 2003-06-16 | 2010-10-06 | パナソニック株式会社 | 半導体装置 |
US7586158B2 (en) * | 2005-07-07 | 2009-09-08 | Infineon Technologies Ag | Piezoelectric stress liner for bulk and SOI |
US7670938B2 (en) * | 2006-05-02 | 2010-03-02 | GlobalFoundries, Inc. | Methods of forming contact openings |
-
2005
- 2005-07-22 FR FR0552279A patent/FR2888990B1/fr active Active
-
2006
- 2006-06-21 US US11/996,406 patent/US7968945B2/en active Active
- 2006-07-21 EP EP06792540A patent/EP1908113A1/fr not_active Withdrawn
- 2006-07-21 WO PCT/EP2006/064491 patent/WO2007010029A1/fr not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US7968945B2 (en) | 2011-06-28 |
US20080290384A1 (en) | 2008-11-27 |
WO2007010029A1 (fr) | 2007-01-25 |
FR2888990A1 (fr) | 2007-01-26 |
EP1908113A1 (fr) | 2008-04-09 |
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Legal Events
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