CN100483540C - 具有电荷注入差动读出放大器的电阻性交叉点存储阵列 - Google Patents

具有电荷注入差动读出放大器的电阻性交叉点存储阵列 Download PDF

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Publication number
CN100483540C
CN100483540C CNB03124128XA CN03124128A CN100483540C CN 100483540 C CN100483540 C CN 100483540C CN B03124128X A CNB03124128X A CN B03124128XA CN 03124128 A CN03124128 A CN 03124128A CN 100483540 C CN100483540 C CN 100483540C
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China
Prior art keywords
preamplifier
current
read
circuit
memory cell
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Expired - Lifetime
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CNB03124128XA
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Chinese (zh)
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CN1455412A (zh
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L·T·特兰
F·A·佩尔纳
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
CNB03124128XA 2002-04-30 2003-04-29 具有电荷注入差动读出放大器的电阻性交叉点存储阵列 Expired - Lifetime CN100483540C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/136782 2002-04-30
US10/136,782 US6597598B1 (en) 2002-04-30 2002-04-30 Resistive cross point memory arrays having a charge injection differential sense amplifier

Publications (2)

Publication Number Publication Date
CN1455412A CN1455412A (zh) 2003-11-12
CN100483540C true CN100483540C (zh) 2009-04-29

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Country Status (6)

Country Link
US (1) US6597598B1 (enExample)
EP (1) EP1359586A2 (enExample)
JP (1) JP4113033B2 (enExample)
KR (1) KR100939068B1 (enExample)
CN (1) CN100483540C (enExample)
TW (1) TW200305878A (enExample)

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US11817159B2 (en) 2020-07-16 2023-11-14 Changxin Memory Technologies, Inc. Circuit for detecting anti-fuse memory cell state and memory
US11817163B2 (en) 2020-07-16 2023-11-14 Changxin Memory Technologies, Inc. Circuit for detecting state of anti-fuse storage unit and memory device thereof
US11854605B2 (en) 2020-07-16 2023-12-26 Changxin Memory Technologies, Inc. State detection circuit for anti-fuse memory cell, and memory
US11854633B2 (en) 2020-07-16 2023-12-26 Changxin Memory Technologies, Inc. Anti-fuse memory cell state detection circuit and memory

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US6778420B2 (en) * 2002-09-25 2004-08-17 Ovonyx, Inc. Method of operating programmable resistant element
US6674679B1 (en) * 2002-10-01 2004-01-06 Hewlett-Packard Development Company, L.P. Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation
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US6795359B1 (en) * 2003-06-10 2004-09-21 Micron Technology, Inc. Methods and apparatus for measuring current as in sensing a memory cell
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Publication number Priority date Publication date Assignee Title
US11817159B2 (en) 2020-07-16 2023-11-14 Changxin Memory Technologies, Inc. Circuit for detecting anti-fuse memory cell state and memory
US11817163B2 (en) 2020-07-16 2023-11-14 Changxin Memory Technologies, Inc. Circuit for detecting state of anti-fuse storage unit and memory device thereof
US11854605B2 (en) 2020-07-16 2023-12-26 Changxin Memory Technologies, Inc. State detection circuit for anti-fuse memory cell, and memory
US11854633B2 (en) 2020-07-16 2023-12-26 Changxin Memory Technologies, Inc. Anti-fuse memory cell state detection circuit and memory

Also Published As

Publication number Publication date
KR20030085503A (ko) 2003-11-05
US6597598B1 (en) 2003-07-22
KR100939068B1 (ko) 2010-01-28
TW200305878A (en) 2003-11-01
JP4113033B2 (ja) 2008-07-02
JP2003323791A (ja) 2003-11-14
EP1359586A2 (en) 2003-11-05
CN1455412A (zh) 2003-11-12

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