TW200305878A - Resistive cross point memory arrays having a charge injection differential sense amplifier - Google Patents
Resistive cross point memory arrays having a charge injection differential sense amplifier Download PDFInfo
- Publication number
- TW200305878A TW200305878A TW091136912A TW91136912A TW200305878A TW 200305878 A TW200305878 A TW 200305878A TW 091136912 A TW091136912 A TW 091136912A TW 91136912 A TW91136912 A TW 91136912A TW 200305878 A TW200305878 A TW 200305878A
- Authority
- TW
- Taiwan
- Prior art keywords
- preamplifier
- circuit
- coupled
- current
- memory
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 151
- 238000002347 injection Methods 0.000 title claims abstract description 16
- 239000007924 injection Substances 0.000 title claims abstract description 16
- 238000003491 array Methods 0.000 title claims description 9
- 238000013500 data storage Methods 0.000 claims abstract description 21
- 238000005516 engineering process Methods 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 claims description 3
- 230000008521 reorganization Effects 0.000 claims description 3
- 230000003321 amplification Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 230000005415 magnetization Effects 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004793 poor memory Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/136,782 US6597598B1 (en) | 2002-04-30 | 2002-04-30 | Resistive cross point memory arrays having a charge injection differential sense amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200305878A true TW200305878A (en) | 2003-11-01 |
Family
ID=22474333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091136912A TW200305878A (en) | 2002-04-30 | 2002-12-20 | Resistive cross point memory arrays having a charge injection differential sense amplifier |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6597598B1 (enExample) |
| EP (1) | EP1359586A2 (enExample) |
| JP (1) | JP4113033B2 (enExample) |
| KR (1) | KR100939068B1 (enExample) |
| CN (1) | CN100483540C (enExample) |
| TW (1) | TW200305878A (enExample) |
Families Citing this family (69)
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| CA2277717C (en) * | 1999-07-12 | 2006-12-05 | Mosaid Technologies Incorporated | Circuit and method for multiple match detection in content addressable memories |
| US6577525B2 (en) * | 2001-08-28 | 2003-06-10 | Micron Technology, Inc. | Sensing method and apparatus for resistance memory device |
| EP1321941B1 (en) * | 2001-12-21 | 2005-08-17 | Kabushiki Kaisha Toshiba | Magnetic random access memory with stacked memory cells |
| JP2004023062A (ja) * | 2002-06-20 | 2004-01-22 | Nec Electronics Corp | 半導体装置とその製造方法 |
| US7152800B2 (en) * | 2002-08-22 | 2006-12-26 | Texas Instruments Incorporated | Preamplifier system having programmable resistance |
| US7038960B2 (en) * | 2002-09-10 | 2006-05-02 | Silicon Storage Technology, Inc. | High speed and high precision sensing for digital multilevel non-volatile memory system |
| US6885600B2 (en) * | 2002-09-10 | 2005-04-26 | Silicon Storage Technology, Inc. | Differential sense amplifier for multilevel non-volatile memory |
| US6778420B2 (en) * | 2002-09-25 | 2004-08-17 | Ovonyx, Inc. | Method of operating programmable resistant element |
| US6674679B1 (en) * | 2002-10-01 | 2004-01-06 | Hewlett-Packard Development Company, L.P. | Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation |
| ITMI20030075A1 (it) * | 2003-01-20 | 2004-07-21 | Simicroelectronics S R L | Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento. |
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| FR2871279A1 (fr) * | 2004-06-03 | 2005-12-09 | Spintron Sa | Memoire magnetique comportant plusieurs modules d'aimantation |
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| JP4118845B2 (ja) | 2004-07-30 | 2008-07-16 | 株式会社東芝 | 半導体記憶装置 |
| US7224598B2 (en) * | 2004-09-02 | 2007-05-29 | Hewlett-Packard Development Company, L.P. | Programming of programmable resistive memory devices |
| US7130235B2 (en) * | 2004-09-03 | 2006-10-31 | Hewlett-Packard Development Company, L.P. | Method and apparatus for a sense amplifier |
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| JP2006127583A (ja) * | 2004-10-26 | 2006-05-18 | Elpida Memory Inc | 不揮発性半導体記憶装置及び相変化メモリ |
| JP4783002B2 (ja) | 2004-11-10 | 2011-09-28 | 株式会社東芝 | 半導体メモリ素子 |
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| US7495971B2 (en) * | 2006-04-19 | 2009-02-24 | Infineon Technologies Ag | Circuit and a method of determining the resistive state of a resistive memory cell |
| EP2089887B1 (en) * | 2006-11-08 | 2015-12-23 | Nxp B.V. | Read enhancement for memory |
| US7567462B2 (en) * | 2006-11-16 | 2009-07-28 | Micron Technology, Inc. | Method and system for selectively limiting peak power consumption during programming or erase of non-volatile memory devices |
| DE102007001859B3 (de) * | 2007-01-12 | 2008-04-24 | Qimonda Ag | Integrierte Schaltung, Speicherbaustein und Verfahren zum Bestimmen eines Speicherzustands einer resistiven Speicherzelle |
| US7400521B1 (en) | 2007-01-12 | 2008-07-15 | Qimoda Ag | Integrated circuit, memory chip and method of evaluating a memory state of a resistive memory cell |
| US9135962B2 (en) * | 2007-06-15 | 2015-09-15 | Micron Technology, Inc. | Comparators for delta-sigma modulators |
| TWI402847B (zh) | 2007-06-25 | 2013-07-21 | Higgs Opl Capital Llc | 相變化記憶體之感測電路 |
| KR100919565B1 (ko) * | 2007-07-24 | 2009-10-01 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치 |
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| WO2009034687A1 (ja) * | 2007-09-10 | 2009-03-19 | Panasonic Corporation | 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法 |
| KR100895387B1 (ko) * | 2007-10-16 | 2009-04-30 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치 |
| TWI347607B (en) | 2007-11-08 | 2011-08-21 | Ind Tech Res Inst | Writing system and method for a phase change memory |
| US20110226148A1 (en) * | 2008-05-16 | 2011-09-22 | Sawka Wayne N | Physical destruction of electrical device and methods for triggering same |
| TWI402845B (zh) | 2008-12-30 | 2013-07-21 | Higgs Opl Capital Llc | 相變化記憶體陣列之驗證電路及方法 |
| TWI412124B (zh) | 2008-12-31 | 2013-10-11 | Higgs Opl Capital Llc | 相變化記憶體 |
| US8363450B2 (en) * | 2009-07-13 | 2013-01-29 | Seagate Technology Llc | Hierarchical cross-point array of non-volatile memory |
| US8514637B2 (en) * | 2009-07-13 | 2013-08-20 | Seagate Technology Llc | Systems and methods of cell selection in three-dimensional cross-point array memory devices |
| JP5284225B2 (ja) * | 2009-09-01 | 2013-09-11 | 株式会社東芝 | 不揮発性半導体記憶装置とその読み出し方法 |
| US8570785B2 (en) | 2010-05-26 | 2013-10-29 | Hewlett-Packard Development Company | Reading a memory element within a crossbar array |
| WO2013015768A1 (en) * | 2011-07-22 | 2013-01-31 | Hewlett-Packard Development Company, L.P. | Circuit and method for reading a resistive switching device in an array |
| US8687398B2 (en) | 2012-02-29 | 2014-04-01 | International Business Machines Corporation | Sense scheme for phase change material content addressable memory |
| CN103366804B (zh) | 2012-03-30 | 2017-10-13 | 硅存储技术公司 | 具有电流注入读出放大器的非易失性存储装置 |
| US9070424B2 (en) * | 2012-06-29 | 2015-06-30 | Samsung Electronics Co., Ltd. | Sense amplifier circuitry for resistive type memory |
| EP2877996A4 (en) * | 2012-07-27 | 2016-03-09 | Hewlett Packard Development Co | DYNAMIC DETECTION CIRCUIT |
| JP5839201B2 (ja) | 2013-03-06 | 2016-01-06 | ソニー株式会社 | 半導体装置および情報読出方法 |
| WO2016068992A1 (en) * | 2014-10-31 | 2016-05-06 | Hewlett Packard Enterprise Development Lp | Reusing sneak current in accessing memory cells |
| US9489999B2 (en) | 2014-11-26 | 2016-11-08 | Qualcomm Incorporated | Magnetic tunnel junction resistance comparison based physical unclonable function |
| US9478308B1 (en) * | 2015-05-26 | 2016-10-25 | Intel IP Corporation | Programmable memory device sense amplifier |
| US10340001B2 (en) * | 2015-08-27 | 2019-07-02 | King Abdullah University Of Science And Technology | Single-readout high-density memristor crossbar |
| US9852790B1 (en) | 2016-10-26 | 2017-12-26 | International Business Machines Corporation | Circuit methodology for highly linear and symmetric resistive processing unit |
| CN108154227B (zh) * | 2016-12-06 | 2020-06-23 | 上海磁宇信息科技有限公司 | 一种使用模拟计算的神经网络芯片 |
| US10680105B2 (en) | 2017-03-21 | 2020-06-09 | International Business Machines Corporation | Mobile ferroelectric single domain wall implementation of a symmetric resistive processing unit |
| US10261977B2 (en) * | 2017-05-04 | 2019-04-16 | University Of Rochester | Resistive memory accelerator |
| KR102244183B1 (ko) | 2017-05-27 | 2021-04-26 | 유 린 리 | 구동 시스템 |
| US10290327B2 (en) | 2017-10-13 | 2019-05-14 | Nantero, Inc. | Devices and methods for accessing resistive change elements in resistive change element arrays |
| US10403336B2 (en) | 2017-12-28 | 2019-09-03 | Micron Technology, Inc. | Techniques for precharging a memory cell |
| CN110446292B (zh) * | 2018-05-03 | 2022-07-08 | 李玉麟 | 驱动装置 |
| US11309005B2 (en) * | 2018-10-31 | 2022-04-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Current steering in reading magnetic tunnel junction |
| US11416416B2 (en) * | 2019-01-13 | 2022-08-16 | Ememory Technology Inc. | Random code generator with non-volatile memory |
| KR102768650B1 (ko) | 2019-06-11 | 2025-02-13 | 에스케이하이닉스 주식회사 | 읽기 동작을 제어하는 제어회로를 포함하는 반도체 메모리 장치 |
| US11217281B2 (en) * | 2020-03-12 | 2022-01-04 | Ememory Technology Inc. | Differential sensing device with wide sensing margin |
| US11854633B2 (en) | 2020-07-16 | 2023-12-26 | Changxin Memory Technologies, Inc. | Anti-fuse memory cell state detection circuit and memory |
| US11817163B2 (en) | 2020-07-16 | 2023-11-14 | Changxin Memory Technologies, Inc. | Circuit for detecting state of anti-fuse storage unit and memory device thereof |
| US11817159B2 (en) | 2020-07-16 | 2023-11-14 | Changxin Memory Technologies, Inc. | Circuit for detecting anti-fuse memory cell state and memory |
| CN113948142B (zh) | 2020-07-16 | 2023-09-12 | 长鑫存储技术有限公司 | 反熔丝存储单元状态检测电路及存储器 |
| WO2024232826A1 (en) * | 2023-05-05 | 2024-11-14 | Singapore University Of Technology And Design | Method and apparatus for computing operations on a non-volatile memory device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
| US6259644B1 (en) * | 1997-11-20 | 2001-07-10 | Hewlett-Packard Co | Equipotential sense methods for resistive cross point memory cell arrays |
| US6169686B1 (en) | 1997-11-20 | 2001-01-02 | Hewlett-Packard Company | Solid-state memory with magnetic storage cells |
| US6292389B1 (en) | 1999-07-19 | 2001-09-18 | Motorola, Inc. | Magnetic element with improved field response and fabricating method thereof |
| US6128239A (en) * | 1999-10-29 | 2000-10-03 | Hewlett-Packard | MRAM device including analog sense amplifiers |
| US6185143B1 (en) | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
| US6297983B1 (en) | 2000-02-29 | 2001-10-02 | Hewlett-Packard Company | Reference layer structure in a magnetic storage cell |
| US6356477B1 (en) | 2001-01-29 | 2002-03-12 | Hewlett Packard Company | Cross point memory array including shared devices for blocking sneak path currents |
-
2002
- 2002-04-30 US US10/136,782 patent/US6597598B1/en not_active Expired - Lifetime
- 2002-12-20 TW TW091136912A patent/TW200305878A/zh unknown
-
2003
- 2003-04-24 JP JP2003119280A patent/JP4113033B2/ja not_active Expired - Fee Related
- 2003-04-28 EP EP03252679A patent/EP1359586A2/en not_active Withdrawn
- 2003-04-29 KR KR1020030026958A patent/KR100939068B1/ko not_active Expired - Fee Related
- 2003-04-29 CN CNB03124128XA patent/CN100483540C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030085503A (ko) | 2003-11-05 |
| US6597598B1 (en) | 2003-07-22 |
| CN100483540C (zh) | 2009-04-29 |
| KR100939068B1 (ko) | 2010-01-28 |
| JP4113033B2 (ja) | 2008-07-02 |
| JP2003323791A (ja) | 2003-11-14 |
| EP1359586A2 (en) | 2003-11-05 |
| CN1455412A (zh) | 2003-11-12 |
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