ITMI20030075A1 - Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento. - Google Patents

Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento.

Info

Publication number
ITMI20030075A1
ITMI20030075A1 IT000075A ITMI20030075A ITMI20030075A1 IT MI20030075 A1 ITMI20030075 A1 IT MI20030075A1 IT 000075 A IT000075 A IT 000075A IT MI20030075 A ITMI20030075 A IT MI20030075A IT MI20030075 A1 ITMI20030075 A1 IT MI20030075A1
Authority
IT
Italy
Prior art keywords
measured
current mirror
detection amplifier
parallel detection
reference branch
Prior art date
Application number
IT000075A
Other languages
English (en)
Inventor
Massimo Montanaro
Mauro Pagliato
Paolo Rolandi
Original Assignee
Simicroelectronics S R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simicroelectronics S R L filed Critical Simicroelectronics S R L
Priority to IT000075A priority Critical patent/ITMI20030075A1/it
Priority to US10/762,195 priority patent/US7075844B2/en
Publication of ITMI20030075A1 publication Critical patent/ITMI20030075A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
IT000075A 2003-01-20 2003-01-20 Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento. ITMI20030075A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT000075A ITMI20030075A1 (it) 2003-01-20 2003-01-20 Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento.
US10/762,195 US7075844B2 (en) 2003-01-20 2004-01-20 Parallel sense amplifier with mirroring of the current to be measured into each reference branch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000075A ITMI20030075A1 (it) 2003-01-20 2003-01-20 Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento.

Publications (1)

Publication Number Publication Date
ITMI20030075A1 true ITMI20030075A1 (it) 2004-07-21

Family

ID=33398054

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000075A ITMI20030075A1 (it) 2003-01-20 2003-01-20 Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento.

Country Status (2)

Country Link
US (1) US7075844B2 (it)
IT (1) ITMI20030075A1 (it)

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
TWI258768B (en) * 2004-03-10 2006-07-21 Samsung Electronics Co Ltd Sense amplifier and method for generating variable reference level
CN101124723B (zh) * 2004-11-29 2010-06-16 Nxp股份有限公司 Rf功率放大器的电流限制电路
DE602005004253T2 (de) * 2005-01-28 2009-01-08 Stmicroelectronics S.R.L., Agrate Brianza Speicher, bei dem zum Lesen an die Wortleitung eine Spannungs-Rampe angelegt wird, die mit einem Stromgenerator erzeugt wird
EP1699054A1 (en) * 2005-03-03 2006-09-06 STMicroelectronics S.r.l. A memory device with a ramp-like voltage biasing structure and reduced number of reference cells
JP2006294144A (ja) * 2005-04-12 2006-10-26 Toshiba Corp 不揮発性半導体記憶装置
JP4772363B2 (ja) * 2005-04-12 2011-09-14 株式会社東芝 不揮発性半導体記憶装置
US8223553B2 (en) * 2005-10-12 2012-07-17 Macronix International Co., Ltd. Systems and methods for programming a memory device
TWI298886B (en) * 2006-07-06 2008-07-11 Ind Tech Res Inst Multiple state sense amplifier for memory architecture
TWI312154B (en) 2006-07-20 2009-07-11 Ind Tech Res Inst Multiple state sense amplifier for memory architecture
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
CN103366804B (zh) * 2012-03-30 2017-10-13 硅存储技术公司 具有电流注入读出放大器的非易失性存储装置
US8929168B2 (en) * 2013-02-28 2015-01-06 Freescale Semiconductor, Inc. Sense amplifier voltage regulator
US10242736B2 (en) 2014-07-29 2019-03-26 Hewlett Packard Enterprise Development Lp Reference currents for input current comparisons
CN104778963B (zh) * 2015-04-01 2017-04-12 山东华芯半导体有限公司 一种rram灵敏放大器
CN112558681B (zh) * 2019-09-25 2022-10-14 圣邦微电子（北京）股份有限公司 一种电流源电路
CN113852042B (zh) * 2021-10-27 2024-03-12 群联电子股份有限公司 过电流保护电路、存储器存储装置及过电流保护方法

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JP3712083B2 (ja) * 1995-11-28 2005-11-02 株式会社ルネサステクノロジ 内部電源電位供給回路及び半導体装置
KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
US5485422A (en) * 1994-06-02 1996-01-16 Intel Corporation Drain bias multiplexing for multiple bit flash cell
US5594691A (en) * 1995-02-15 1997-01-14 Intel Corporation Address transition detection sensing interface for flash memory having multi-bit cells
US5684732A (en) * 1995-03-24 1997-11-04 Kawasaki Steel Corporation Semiconductor devices
EP0757355B1 (en) * 1995-07-31 2000-04-19 STMicroelectronics S.r.l. Mixed parallel-dichotomic serial sensing method for sensing multiple-levels non-volatile memory cells, and sensing circuit actuating such method
DE69631123D1 (de) 1996-06-18 2004-01-29 St Microelectronics Srl Verfahren und Schaltung zum Lesen von nichtflüchtigen Speicherzellen mit niedriger Versorgungsspannung
US5898617A (en) * 1997-05-21 1999-04-27 Motorola, Inc. Sensing circuit and method
US6122212A (en) * 1998-05-01 2000-09-19 Winbond Electronics Corporation Sense amplifier with feedbox mechanism
US6044019A (en) * 1998-10-23 2000-03-28 Sandisk Corporation Non-volatile memory with improved sensing and method therefor
EP1249841B1 (en) * 2001-04-10 2008-10-29 STMicroelectronics S.r.l. Reading circuit and method for a multilevel non volatile memory
EP1288955A3 (en) * 2001-08-17 2004-09-22 Kabushiki Kaisha Toshiba Semiconductor memory device
US6459613B1 (en) * 2001-10-29 2002-10-01 Winbond Electronics Corporation Current-mode identifying circuit for multilevel flash memories
EP1324344B1 (en) * 2001-12-28 2007-04-04 STMicroelectronics S.r.l. Sense amplifier structure for multilevel non-volatile memory devices and corresponding reading method
US6597598B1 (en) * 2002-04-30 2003-07-22 Hewlett-Packard Development Company, L.P. Resistive cross point memory arrays having a charge injection differential sense amplifier
US6657889B1 (en) * 2002-06-28 2003-12-02 Motorola, Inc. Memory having write current ramp rate control
EP1400980A1 (en) * 2002-09-17 2004-03-24 STMicroelectronics S.r.l. A circuit for biasing an input node of a sense amplifier with a pre-charging stage
US6946882B2 (en) * 2002-12-20 2005-09-20 Infineon Technologies Ag Current sense amplifier
ITTO20030132A1 (it) * 2003-02-25 2004-08-26 Atmel Corp Amplificatore di rilevamento rapido a specchio, di tipo configurabile e procedimento per configurare un tale amplificatore.

Also Published As

Publication number Publication date
US20040228179A1 (en) 2004-11-18
US7075844B2 (en) 2006-07-11

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