DE60028366D1 - Optischer Verstärker mit verstellbarer stabilisierter Verstärkung - Google Patents
Optischer Verstärker mit verstellbarer stabilisierter VerstärkungInfo
- Publication number
- DE60028366D1 DE60028366D1 DE60028366T DE60028366T DE60028366D1 DE 60028366 D1 DE60028366 D1 DE 60028366D1 DE 60028366 T DE60028366 T DE 60028366T DE 60028366 T DE60028366 T DE 60028366T DE 60028366 D1 DE60028366 D1 DE 60028366D1
- Authority
- DE
- Germany
- Prior art keywords
- optical amplifier
- adjustable stabilized
- stabilized gain
- gain
- adjustable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1221—Detuning between Bragg wavelength and gain maximum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
- H01S5/5072—Gain clamping, i.e. stabilisation by saturation using a further mode or frequency
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00401992A EP1172907B1 (de) | 2000-07-11 | 2000-07-11 | Optischer Verstärker mit verstellbarer stabilisierter Verstärkung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60028366D1 true DE60028366D1 (de) | 2006-07-06 |
DE60028366T2 DE60028366T2 (de) | 2006-10-12 |
Family
ID=8173765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60028366T Expired - Fee Related DE60028366T2 (de) | 2000-07-11 | 2000-07-11 | Optischer Verstärker mit verstellbarer stabilisierter Verstärkung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6563631B2 (de) |
EP (1) | EP1172907B1 (de) |
AU (1) | AU2001264911A1 (de) |
DE (1) | DE60028366T2 (de) |
TW (1) | TW530445B (de) |
WO (1) | WO2002005392A1 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE515435C2 (sv) * | 1999-02-17 | 2001-08-06 | Altitun Ab | Metod för att våglängdslåsa och modkontrollera en avstämbar laser |
US6891664B2 (en) * | 1999-03-22 | 2005-05-10 | Finisar Corporation | Multistage tunable gain optical amplifier |
GB2396956B (en) * | 2001-09-05 | 2005-08-03 | Kamelian Ltd | Variable-gain gain-clamped optical amplifiers |
US7295783B2 (en) | 2001-10-09 | 2007-11-13 | Infinera Corporation | Digital optical network architecture |
KR100395430B1 (ko) * | 2001-10-29 | 2003-08-21 | 이동한 | 라만 광섬유증폭기와 반도체 광증폭기의 결합장치 |
US6751013B1 (en) * | 2002-01-15 | 2004-06-15 | Onetta, Inc. | Gain-clamped semiconductor optical amplifiers with adjustable gain levels |
KR100464359B1 (ko) * | 2002-03-11 | 2005-01-03 | 삼성전자주식회사 | 파장 가변형 레이저 장치 |
US7189497B2 (en) * | 2002-07-24 | 2007-03-13 | Intel Corporation | Method for writing a planar waveguide having gratings of different center wavelengths |
DE10242037A1 (de) * | 2002-09-11 | 2004-03-25 | Bts Media Solutions Gmbh | Anordnung zur Korrektur von Farbvideosignalen |
US7162113B2 (en) * | 2002-10-08 | 2007-01-09 | Infinera Corporation | Deployment of electro-optic amplitude varying elements (AVEs) and electro-optic multi-functional elements (MFEs) in photonic integrated circuits (PICs) |
KR100547817B1 (ko) * | 2003-02-19 | 2006-01-31 | 삼성전자주식회사 | 이득 고정형 반도체 광증폭기 |
JP4439193B2 (ja) * | 2003-03-20 | 2010-03-24 | 富士通株式会社 | 半導体光増幅器及び光増幅方法 |
KR100566187B1 (ko) * | 2003-08-20 | 2006-03-29 | 삼성전자주식회사 | 수평방향 레이징 구조를 갖는 이득 고정 반도체 광증폭기및 그제조방법 |
US7042657B2 (en) * | 2003-08-28 | 2006-05-09 | Board Of Regents The University Of Texas System | Filter for selectively processing optical and other signals |
KR100584412B1 (ko) * | 2003-10-10 | 2006-05-26 | 삼성전자주식회사 | 이득 고정된 반도체 광증폭기 |
US7068866B2 (en) * | 2003-11-03 | 2006-06-27 | Northrop Grumman Corporation | Slow wave optical waveguide for velocity matched semiconductor modulators |
KR100617686B1 (ko) * | 2004-02-25 | 2006-08-28 | 삼성전자주식회사 | 이득 고정 반도체 광증폭기 |
US8032027B2 (en) | 2005-07-25 | 2011-10-04 | Massachusetts Institute Of Technology | Wide free-spectral-range, widely tunable and hitless-switchable optical channel add-drop filters |
CN100362419C (zh) * | 2005-08-09 | 2008-01-16 | 华中科技大学 | 一种半导体光放大器 |
WO2008008344A2 (en) * | 2006-07-11 | 2008-01-17 | Massachusetts Institute Of Technology | Microphotonic maskless lithography |
WO2008021467A2 (en) * | 2006-08-16 | 2008-02-21 | Massachusetts Institute Of Technology | Balanced bypass circulators and folded universally-balanced interferometers |
WO2008053672A1 (fr) * | 2006-10-31 | 2008-05-08 | Anritsu Corporation | Composant optique à semiconducteur, laser à semiconducteur utilisant le composant optique à semiconducteur et transpondeur optique utilisant le laser à semiconducteur |
WO2008082664A2 (en) * | 2006-12-29 | 2008-07-10 | Massachusetts Institute Of Technology | Fabrication-tolerant waveguides and resonators |
WO2008118465A2 (en) * | 2007-03-26 | 2008-10-02 | Massachusetts Institute Of Technology | Hitless tuning and switching of optical resonator amplitude and phase responses |
WO2009055440A2 (en) * | 2007-10-22 | 2009-04-30 | Massachusetts Institute Of Technology | Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays |
TW201013291A (en) * | 2008-09-19 | 2010-04-01 | Univ Nat Chiao Tung | Adjustable optical-signal delay module and method of same |
GB2465754B (en) * | 2008-11-26 | 2011-02-09 | Univ Dublin City | A semiconductor optical amplifier with a reduced noise figure |
WO2010065710A1 (en) * | 2008-12-03 | 2010-06-10 | Massachusetts Institute Of Technology | Resonant optical modulators |
JP2010232424A (ja) * | 2009-03-27 | 2010-10-14 | Fujitsu Ltd | 半導体光増幅装置及び光モジュール |
US8483521B2 (en) * | 2009-05-29 | 2013-07-09 | Massachusetts Institute Of Technology | Cavity dynamics compensation in resonant optical modulators |
JP5434324B2 (ja) * | 2009-07-14 | 2014-03-05 | 富士通株式会社 | 反射型半導体光増幅器 |
KR101337560B1 (ko) * | 2009-08-18 | 2013-12-06 | 한국전자통신연구원 | 원격 광 증폭된 수동형 광 네트워크 시스템, 광회선단말, 원격노드 및 이를 이용한 광 증폭 방법 및 이득 고정방법 |
US20130016744A1 (en) * | 2011-07-13 | 2013-01-17 | Oracle International Corporation | Laser source with tunable-grating-waveguide reflections |
WO2014055880A2 (en) * | 2012-10-05 | 2014-04-10 | David Welford | Systems and methods for amplifying light |
US20140185980A1 (en) * | 2012-12-31 | 2014-07-03 | Futurewei Technologies, Inc. | Silicon-On-Insulator Platform for Integration of Tunable Laser Arrays |
US9618698B2 (en) * | 2014-11-06 | 2017-04-11 | Huawei Technologies Co., Ltd. | Optical waveguide crossings |
US11177632B2 (en) * | 2020-03-16 | 2021-11-16 | International Business Machines Corporation | Augmented semiconductor lasers with spontaneous emissions blockage |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3467906A (en) | 1967-06-14 | 1969-09-16 | Rca Corp | Constant-gain low-noise light amplifier |
GB8621439D0 (en) | 1986-09-05 | 1986-10-15 | Secr Defence | Electro-optic device |
JPH01124279A (ja) * | 1987-11-09 | 1989-05-17 | Matsushita Electric Ind Co Ltd | 分布帰還型レーザ |
NL8803080A (nl) | 1988-12-16 | 1990-07-16 | Philips Nv | Verstembare halfgeleiderdiodelaser met verdeelde reflectie en vervaardigingswijze van een dergelijke halfgeleiderdiodelaser. |
JPH0357288A (ja) | 1989-07-17 | 1991-03-12 | Siemens Ag | 半導体レーザーを有するデバイスおよびその使用方法 |
US6025939A (en) | 1990-06-06 | 2000-02-15 | Kol Ohr Corporation | Continuously tunable laser |
US5392308A (en) | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
FR2709189B1 (fr) * | 1993-08-20 | 1995-09-15 | Alcatel Nv | Amplificateur optique à semiconducteur, présentant une non-linéarité réduite. |
FR2713350B1 (fr) | 1993-12-06 | 1995-12-29 | Franck Delorme | Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant. |
FR2716303B1 (fr) | 1994-02-11 | 1996-04-05 | Franck Delorme | Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement. |
DE69521302T2 (de) * | 1994-02-18 | 2002-04-18 | British Telecomm | Gewinngesteuerter faseroptischer verstärker |
JPH07326820A (ja) | 1994-05-30 | 1995-12-12 | Mitsubishi Electric Corp | 波長可変半導体レーザ装置 |
IT1267648B1 (it) * | 1994-12-15 | 1997-02-07 | Cselt Centro Studi Lab Telecom | Amplificatore ottico. |
FR2737353B1 (fr) | 1995-07-25 | 1997-09-05 | Delorme Franck | Laser a reflecteur de bragg distribue et a reseau echantillonne, tres largement accordable par variation de phase, et procede d'utilisation de ce laser |
FR2737582B1 (fr) * | 1995-08-04 | 1997-08-29 | Alcatel Nv | Composant opto-electronique integre |
FR2737942B1 (fr) | 1995-08-18 | 1997-11-07 | Delorme Franck | Composant d'emission laser accordable en longueur d'onde par variation d'absorption |
GB2309581B (en) | 1996-01-27 | 2000-03-22 | Northern Telecom Ltd | Semiconductor lasers |
US5699468A (en) | 1996-06-28 | 1997-12-16 | Jds Fitel Inc. | Bragg grating variable optical attenuator |
US5923684A (en) | 1996-09-26 | 1999-07-13 | Lucent Technologies Inc. | Fiber amplifier with multiple pass pumping |
US5926493A (en) * | 1997-05-20 | 1999-07-20 | Sdl, Inc. | Optical semiconductor device with diffraction grating structure |
US6072812A (en) | 1997-08-01 | 2000-06-06 | Lucent Technologies Inc. | Distributed feedback laser with loss coupling |
DE69834531T2 (de) * | 1997-08-27 | 2007-05-31 | Interuniversitair Micro-Elektronica Centrum Vzw | Optische Entscheidungsschaltung und dessen Verwendung |
US5892781A (en) | 1997-09-02 | 1999-04-06 | E-Tek Dynamics, Inc. | High output fiber amplifier/lasers for fiberoptic networks |
US5936994A (en) * | 1997-09-18 | 1999-08-10 | Northern Telecom Limited | Two-section complex coupled distributed feedback semiconductor laser with enhanced wavelength tuning range |
FR2785730B1 (fr) * | 1998-11-05 | 2001-10-12 | Cit Alcatel | Amplificateur optique a semi-conducteur a gain stabilise reglable et systeme optique utilisant un tel amplificateur |
US6347104B1 (en) * | 1999-02-04 | 2002-02-12 | Genoa Corporation | Optical signal power monitor and regulator |
US6445495B1 (en) * | 1999-03-22 | 2002-09-03 | Genoa Corporation | Tunable-gain lasing semiconductor optical amplifier |
US6339496B1 (en) * | 1999-06-22 | 2002-01-15 | University Of Maryland | Cavity-less vertical semiconductor optical amplifier |
US6249373B1 (en) * | 1999-12-22 | 2001-06-19 | At&T Corp. | Semiconductor optical amplifier with adjustable gain |
KR100350231B1 (ko) * | 2000-02-07 | 2002-08-27 | 한국과학기술연구원 | 광섬유 격자를 이용한 반도체 광증폭기의 이득조절 장치 |
-
2000
- 2000-07-11 EP EP00401992A patent/EP1172907B1/de not_active Expired - Lifetime
- 2000-07-11 DE DE60028366T patent/DE60028366T2/de not_active Expired - Fee Related
-
2001
- 2001-05-23 WO PCT/US2001/016812 patent/WO2002005392A1/en active Application Filing
- 2001-05-23 AU AU2001264911A patent/AU2001264911A1/en not_active Abandoned
- 2001-05-31 US US09/872,691 patent/US6563631B2/en not_active Expired - Lifetime
- 2001-07-11 TW TW090117168A patent/TW530445B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2002005392A1 (en) | 2002-01-17 |
EP1172907A1 (de) | 2002-01-16 |
US20020067540A1 (en) | 2002-06-06 |
US6563631B2 (en) | 2003-05-13 |
TW530445B (en) | 2003-05-01 |
DE60028366T2 (de) | 2006-10-12 |
EP1172907B1 (de) | 2006-05-31 |
AU2001264911A1 (en) | 2002-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |