FR2737353B1 - Laser a reflecteur de bragg distribue et a reseau echantillonne, tres largement accordable par variation de phase, et procede d'utilisation de ce laser - Google Patents

Laser a reflecteur de bragg distribue et a reseau echantillonne, tres largement accordable par variation de phase, et procede d'utilisation de ce laser

Info

Publication number
FR2737353B1
FR2737353B1 FR9509004A FR9509004A FR2737353B1 FR 2737353 B1 FR2737353 B1 FR 2737353B1 FR 9509004 A FR9509004 A FR 9509004A FR 9509004 A FR9509004 A FR 9509004A FR 2737353 B1 FR2737353 B1 FR 2737353B1
Authority
FR
France
Prior art keywords
laser
same
bragg reflector
distributed bragg
sample array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9509004A
Other languages
English (en)
Other versions
FR2737353A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR9509004A priority Critical patent/FR2737353B1/fr
Priority to US08/679,120 priority patent/US5748660A/en
Priority to GB9614869A priority patent/GB2303739B/en
Priority to DE19629916A priority patent/DE19629916A1/de
Publication of FR2737353A1 publication Critical patent/FR2737353A1/fr
Application granted granted Critical
Publication of FR2737353B1 publication Critical patent/FR2737353B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR9509004A 1995-07-25 1995-07-25 Laser a reflecteur de bragg distribue et a reseau echantillonne, tres largement accordable par variation de phase, et procede d'utilisation de ce laser Expired - Fee Related FR2737353B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9509004A FR2737353B1 (fr) 1995-07-25 1995-07-25 Laser a reflecteur de bragg distribue et a reseau echantillonne, tres largement accordable par variation de phase, et procede d'utilisation de ce laser
US08/679,120 US5748660A (en) 1995-07-25 1996-07-12 Sample grating distributed bragg reflector laser, very widely matchable by phase variation and process for using this laser
GB9614869A GB2303739B (en) 1995-07-25 1996-07-15 Sample grating distributed bragg reflector laser,very widely matchable by phase variation and process for using this laser
DE19629916A DE19629916A1 (de) 1995-07-25 1996-07-24 Verteilter Bragg-Reflektorlaser mit Tastgitter und breiter Abstimmbarkeit durch Phasenänderung sowie Verwendungsverfahren dieses Lasers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9509004A FR2737353B1 (fr) 1995-07-25 1995-07-25 Laser a reflecteur de bragg distribue et a reseau echantillonne, tres largement accordable par variation de phase, et procede d'utilisation de ce laser

Publications (2)

Publication Number Publication Date
FR2737353A1 FR2737353A1 (fr) 1997-01-31
FR2737353B1 true FR2737353B1 (fr) 1997-09-05

Family

ID=9481343

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9509004A Expired - Fee Related FR2737353B1 (fr) 1995-07-25 1995-07-25 Laser a reflecteur de bragg distribue et a reseau echantillonne, tres largement accordable par variation de phase, et procede d'utilisation de ce laser

Country Status (4)

Country Link
US (1) US5748660A (fr)
DE (1) DE19629916A1 (fr)
FR (1) FR2737353B1 (fr)
GB (1) GB2303739B (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6624000B1 (en) * 1999-09-02 2003-09-23 Agility Communications, Inc. Method for making a monolithic wavelength converter assembly
AUPQ300199A0 (en) * 1999-09-21 1999-10-14 University Of Sydney, The A grating design
JP4585168B2 (ja) * 2000-07-05 2010-11-24 三菱電機株式会社 半導体レーザ装置
EP1172907B1 (fr) 2000-07-11 2006-05-31 Corning Incorporated Amplificateur optique à gain stabilisé et adjustable
US6728290B1 (en) * 2000-09-13 2004-04-27 The Board Of Trustees Of The University Of Illinois Current biased dual DBR grating semiconductor laser
GB2371920A (en) * 2001-02-02 2002-08-07 Marconi Caswell Ltd Sampled Gating Distribiuted Reflector Laser
US6574260B2 (en) 2001-03-15 2003-06-03 Corning Lasertron Incorporated Electroabsorption modulated laser
GB2377545A (en) * 2001-07-14 2003-01-15 Marconi Caswell Ltd Tuneable Laser
AU2002319490A1 (en) * 2001-07-30 2003-02-17 Bookham Technology Plc Tuneable laser
GB2378311A (en) * 2001-08-03 2003-02-05 Marconi Caswell Ltd Tunable Laser
US6987784B2 (en) * 2001-09-10 2006-01-17 San Jose Systems, Inc. Wavelength agile laser
US7653093B2 (en) * 2001-09-10 2010-01-26 Imec Widely tunable twin guide laser structure
US6690694B2 (en) 2001-11-08 2004-02-10 Intel Corporation Thermally wavelength tunable lasers
US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
KR20040098421A (ko) * 2003-05-15 2004-11-20 한국전자통신연구원 광대역 파장 가변 추출 격자 분포 궤환 레이저 다이오드
US7567595B2 (en) * 2007-10-01 2009-07-28 Corning Incorporated Laser source with interdigital heater electrodes and underlying current confinement layer
CN104205533B (zh) 2012-03-26 2018-03-30 英特尔公司 包括抗谐振波导的混合激光器
US8861556B2 (en) * 2012-07-05 2014-10-14 Jds Uniphase Corporation Tunable Bragg grating and a tunable laser diode using same
KR101910551B1 (ko) * 2013-09-16 2018-10-22 인텔 코포레이션 광 도파관을 포함하는 하이브리드 광학 장치
US9312662B1 (en) 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69115624T2 (de) * 1990-09-28 1996-05-15 Nippon Electric Co Schaltung und Elektrodenanordnung zur Erzeugung einer breitbandigen Frequenzmodulationscharakteristik in Halbleiterlasern
JP3142333B2 (ja) * 1991-12-17 2001-03-07 株式会社東芝 分布帰還型半導体レ−ザ及びその駆動方法
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
FR2690572B1 (fr) * 1992-04-24 1994-07-22 France Telecom Structure laser a retroaction repartie.
US5379318A (en) * 1994-01-31 1995-01-03 Telefonaktiebolaget L M Ericsson Alternating grating tunable DBR laser
DE69505064T4 (de) * 1994-07-15 2000-02-24 Nec Corp Wellenlängenabstimmbarer Halbleiterlaser

Also Published As

Publication number Publication date
GB2303739B (en) 1999-01-06
US5748660A (en) 1998-05-05
GB9614869D0 (en) 1996-09-04
FR2737353A1 (fr) 1997-01-31
GB2303739A (en) 1997-02-26
DE19629916A1 (de) 1997-01-30

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Legal Events

Date Code Title Description
ST Notification of lapse