CN100444343C - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN100444343C
CN100444343C CNB2006100061439A CN200610006143A CN100444343C CN 100444343 C CN100444343 C CN 100444343C CN B2006100061439 A CNB2006100061439 A CN B2006100061439A CN 200610006143 A CN200610006143 A CN 200610006143A CN 100444343 C CN100444343 C CN 100444343C
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electrical connection
connection section
semiconductor device
manufacture method
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CN1819133A (zh
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中山浩久
佐藤史郎
庄司正宣
野坂仁志
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

本发明提供一种能够提高外部端子的可靠性的半导体装置的制造方法以及电连接部的处理方法。半导体装置的制造方法包括：(a)在与半导体基板(20)电导通的电连接部(14)上，设置含酸的料浆(54)；(b)通过清洗电连接部(14)，从电连接部(14)上去除料浆(54)；以及，(c)在电连接部(14)上设置导电材料。

Description

半导体装置的制造方法
技术领域
本发明涉及一种半导体装置的制造方法以及电连接部的处理方法
背景技术
BGA或CSP等半导体封装的外部端子，一般使用焊球。焊球设置在半导体封装的内插器的电连接部(突起)上。通常，突起的表面上，形成有电镀保护膜等氧化防止膜，通过这样能够防止突起表面的氧化，提高焊球的置载工序的可靠性。但是，由于这种以往的方法，不但需要增加电镀保护膜等处理工序，而且在例如使用Ni作为电镀保护膜的情况下，通过焊锡接合形成既硬且脆的合金层，从而导致外部端子的机械可靠性下降。作为相关文献，有特开2000-114313号公报。
发明内容
本发明的目的在于：提供一种能够提高外部端子的可靠性的半导体装置的制造方法以及电连接部的处理方法。
(1)本发明中的半导体装置的制造方法，包括：
(a)在与半导体基板电导通、且排列为多行多列的多个电连接部之中，只在位于上述多行多列的外侧的角部的第1电连接部上，设置含酸的料浆；
(b)通过清洗上述第1电连接部，从上述第1电连接部上去除上述料浆；以及，
(c)在上述多个电连接部上，设置导电材料，
在上述(a)工序之前，在上述多个电连接部之中上述第1电连接部以外的第2电连接部上，形成有电镀保护膜。
根据本发明，由于能够通过料浆中含有的酸，将覆盖在电连接部表面的氧化膜去除，因此提高了之后所进行的设置导电材料的工序的可靠性。另外，由于通过进行料浆的涂布工序以及清洗工序，能够去除氧化膜，因此与事先形成电镀保护膜的工序相比，制造工序极为简单。
(2)该半导体装置的制造方法中，
可以让上述导电材料由焊锡构成。
(3)该半导体装置的制造方法中，
可以在上述(c)工序中，借助助焊剂在上述多个电连接部上设置上述焊锡。
(4)该半导体装置的制造方法中，
上述(a)工序中所设置的上述料浆，可由与上述(c)工序中所设置的助焊剂相同的材料构成。通过这样，能够减少制造工序中所使用的化学物质的数目。
(5)该半导体装置的制造方法中，
上述(a)工序中所设置的上述料浆，可由比上述(c)工序中所设置的助焊剂含酸比率大的材料构成。通过这样，能够有效地去除电连接部表面的氧化膜。
(6)该半导体装置的制造方法中，
上述(a)工序中所设置的上述料浆，可由含有比上述(c)工序中所设置的助焊剂的酸还原能力大的酸的材料构成。通过这样，能够有效地去除电连接部表面的氧化膜。
(7)该半导体装置的制造方法中，
上述(a)以及(b)工序可在大气或氧气环境下进行。通过这样，由于即使在工序中电连接部的表面被气体所覆盖的情况下，该气体也能够形成为氧化膜，因此能够通过清洗工序与料浆一并去除。所以，能够让电连接部的导电面可靠地暴露出来。
(8)该半导体装置的制造方法中，
上述料浆的酸可以是有机酸。
(9)该半导体装置的制造方法中，
上述料浆的酸可以是无机酸。
(10)该半导体装置的制造方法中，
上述半导体基板，可置载于内插器中；
上述多个电连接部，可为形成在内插器中的突起。
(11)该半导体装置的制造方法中，
上述多个电连接部，是形成在上述半导体基板上的电极焊盘。
(12)该半导体装置的制造方法中，
上述半导体基板上，可形成有树脂层；
上述多个电连接部，可为形成在上述树脂层上的突起。
(13)该半导体装置的制造方法中，
多个上述电连接部，可被排列成多行多列；
可将上述(a)以及(b)工序，对位于上述多行多列的外侧端部的电连接部进行。
(14)该半导体装置的制造方法中，
可将上述(a)以及(b)工序，对位于上述多行多列的外侧的角部的电连接部进行。通过这样，被排列的多个电连接部的多行多列中的角部，最容易被施加应力。
(15)该半导体装置的制造方法中，
上述多个电连接部，可被在围着给定区域的区域中排列成多行多列；
可将上述(a)以及(b)工序，对最接近上述给定区域的内侧的端部进行。通过这样，由于不会例如因电镀保护膜造成机械可靠性的降低，因此如果对容易施加应力的电连接部进行，会非常有效。
(16)本发明中的电连接部的处理方法，包括：
(a)在电连接部上设置含酸的料浆；以及，
(b)在往上述电连接部上设置导电材料之前，通过清洗上述电连接部，将上述料浆从上述电连接部上去除。
根据本发明，由于能够通过料浆中含有的酸，将覆盖在电连接部表面上的氧化膜去除，因此提高了之后所进行的设置导电材料的工序的可靠性。另外，由于通过进行料浆的涂布工序以及清洗工序，能够去除氧化膜，因此与事先形成电镀保护膜的工序相比，制造工序极为简单。
(17)该电连接部的处理方法中，
上述(a)以及(b)工序可以在大气或氧气环境下进行。通过这样，由于即使在工序中电连接部的表面被气体所覆盖的情况下，该气体也能够形成为氧化膜，因此能够通过清洗工序与料浆一并去除。所以能够让电连接部的导电面可靠地暴露出来。
(18)该电连接部的处理方法中，
上述料浆的酸可以是有机酸。
(19)该电连接部的处理方法中，
上述料浆的酸可以是无机酸。
(20)该电连接部的处理方法中，
上述电连接部可形成在母板上；
上述(b)工序之后，可将电子部件焊接在上述母板的上述电连接部上。
附图说明
图1为说明本发明的第1实施方式的图。
图2为说明本发明的第1实施方式的图。
图3为说明本发明的第1实施方式的图。
图4为说明本发明的第1实施方式的图。
图5为说明本发明的第1实施方式的变形例的图。
图6为说明本发明的第2实施方式的图。
图7为说明本发明的第2实施方式的图。
图8为说明本发明的第2实施方式的变形例的图。
图9为说明本发明的第3实施方式的图。
图10为说明本发明的第3实施方式的图。
图11为说明本发明的第3实施方式的图。
图12为说明本发明的第4实施方式的图。
图13为说明本发明的第4实施方式的图。
图14为说明本发明的第5实施方式的图。
图15为说明本发明的第5实施方式的图。
图中：10-内插器，14-电连接部，20-半导体芯片(半导体基板)，54-料浆，56-助焊剂，58-焊锡，60-外部端子，62-给定区域，120-半导体基板，124-电极焊盘，160-外部端子，220-半导体基板，224-电极焊盘，320-半导体基板，324-电极焊盘，328-树脂层，332-电连接部，360-外部端子，410-母板，412-电连接部。
具体实施方式
下面对照附图对本发明的实施方式进行说明。
(第1实施方式)
图1～图4为表示应用本发明的第1实施方式中的半导体装置的制造方法的图。该半导体装置的制造方法，包括电连接部的处理方法。
本实施方式中，准备内插器(interposer)10。内插器10中置载有半导体芯片(半导体基板)20。即，本实施方式中，准备好将半导体芯片20封装化得到的半导体封装40。
内插器10，是用来置载半导体芯片20的布线基板。内插器10为半导体封装40的一部分。内插器10可以是有机类的树脂基板(例如环氧基板、聚酰亚胺基板)，也可以是无机类基板(例如玻璃基板、陶瓷基板)，或是有机类·无机类的复合构造基板(例如玻璃环氧基板)。
内插器10中，其双面上形成有由导电性材料构成电连接部12、14。电连接部12、14，例如可为布线图形的突起(land)，由金属(例如Cu)形成。另外，内插器10的表面上设有保护膜(例如阻焊剂)16。保护膜16避开电连接部12、14，将布线图形的其他部分保护起来。例如，保护膜16避开电连接部14(或电连接部12)的中央部，覆盖其外周端部来设置。
内插器10可以是单层基板，也可以是多层基板。总之各个电连接部12、14彼此电导通。电连接部12、14的相互的电连接，可以用过孔来实现。
半导体芯片20，具有集成电路22以及与其电连接的电极焊盘(例如Al焊盘(pad))24。电极焊盘24，一般位于半导体芯片20的端部(例如相面对的2边或4边)。另外，半导体芯片20的电极焊盘24侧的表面上，设有钝化膜28。
半导体芯片20，置载于内插器10中的电连接部12侧的面上。通过这样，电连接部14与半导体芯片20电导通。半导体芯片20的置载形态，可以是将电极焊盘24的形成面面向内插器10一侧的面朝下型，也可以是与其相反的面朝上型。在面朝下型的情况下，通常在电极焊盘24上设置有突起(例如Au突起)。这种情况下，半导体芯片20(详细的说是突起)与内插器10(详细的说是电连接部12)这二者之间的电连接，能够通过各向异性导电材料30来实现。各向异性导电材料30，可以是薄膜(ACF)或料浆(ACP)中的任意一种。各向异性导电材料30，具有粘合剂以及分散在该粘合剂中的多个导电粒子，导电粒子介于突起与电连接部12之间，通过这样来实现二者间的电连接。或者，作为面朝下型的其他电连接方式，还可以应用借助导电树脂料浆实现的连接、金属接合(例如Au-Au接合、Au-Sn接合或焊锡接合)、以及借助绝缘树脂的收缩力的方式。另外，在金属接合的情况下，可以在半导体芯片20与内插器10之间，填充底层材料(树脂)。另外，在面朝上型的情况下，通常二者间的电连接用引线实现，并且整体被树脂密封。
本实施方式中，如图2(A)～图4所示，在上述内插器10的电连接部14上形成外部端子60。首先，如图2(A)～图2(C)所示，对电连接部的处理方法进行说明。
如图2(A)所示，在电连接部14的表面上覆盖氧化膜15。该氧化膜15，因自然氧化、半导体芯片20的置载工序的加热、或内插器10的干燥工序的加热等而形成，这一点是公知的。
首先，在电连接部14中设置料浆(paste)54(参照图2(B))。料浆54含有酸。料浆54的酸可以是无机酸或有机酸。无机酸可以使用卤化氢水溶液。作为无机酸的具体例子，例如有氢溴酸(HBr)、盐酸(HCl)、硫酸(H2SO4)、硝酸(HNO3)、磷酸(H3PO4)等。作为有机酸的具体例子，例如有羧酸(RCOOH)。由于无机酸与有机酸相比，还原能力较大，因此如果使用含无机酸的料浆54，则能够有效地去除氧化膜15。另外，由于无机酸中的盐酸、硫酸，还原能力格外强(例如比氢溴酸强)，因此更加优选。
料浆54可以是助焊剂(flux)。这种情况下，料浆54可以含有树脂、活性剂、溶剂、触变剂。作为树脂，可以使用水溶性树脂或松香类树脂。助焊剂的组成中只要含酸即可，没有特别的限定。例如，作为助焊剂的组成，可以用给定比率混合脂肪族乙二醇醚、变性硬化蓖麻油、甘油、有机酸、有机胺的卤盐、以及焊锡粉末来得到。
料浆54，可以由与后述的粘焊锡用的助焊剂56(参照图3(A))相同的材料构成。这样一来，能够减少制造工序中所使用的化学物质的数目。或者，料浆54也可以由含酸率比粘焊锡用的助焊剂56大的材料构成。另外，料浆54，还可以由含有比粘焊锡用的助焊剂56的酸还原能力大的酸的材料构成。通过这样，能够有效地去除电连接部14的表面的氧化膜15。
设置料浆54的方法，如图2(A)所示，可以应用针头转写方式，其通过针头50转写液滴52。作为其他的方式，还可以使用印刷方式(例如丝网印刷方式)、喷墨方式、借助分配器实现的涂布方式等。设置料浆54的区域，只要是包含内插器10中的电连接部14的区域即可，例如图2(B)所示，可以分为各个电连接部14的多个区域来设置。
如图2(B)所示，设置了料浆54之后，放置给定时间，直到作为电连接部14的材料的金属的还原反应结束。例如，在电连接部14的材料是铜、并设置含有氢溴酸的料浆54的情况下，发生以下的化学反应。
CuO(氧化铜)+2HBr(氢溴酸)→CuBr2(溴化铜)+H2O(水)
为了促进上述化学反应，可以进行加热。或者，为了防止料浆54中含有的酸挥发，也可以不加热而在常温下放置。通过防止酸的挥发，能够可靠地保证上述化学反应的发生。
之后，如图2(C)所示，通过清洗电连接部14，从电连接部14上去除料浆54。这样，能够将覆盖在电连接部14的表面上的氧化膜15，与料浆54一并去除。即，能够让电连接部14的导电面可靠地暴露出来。
上述料浆54的涂布工序以及清洗工序，可在大气或氧气环境下进行。由于通过这样，即使在工序中电连接部14的表面上覆盖有某种气体的情况下，该气体也被形成为氧化膜，因此能够通过清洗工序与料浆54一并去除。从而，能够将电连接部14的导电面可靠地暴露出来。另外，上述料浆的涂布工序以及清洗工序，可以对多个电连接部14的全体进行。
接下来，在电连接部14上设置导电材料。在使用焊锡作为导电材料的情况下，如图3(A)以及图3(B)所示，可以在电连接部14上借助助焊剂56设置焊锡58。焊锡58可以作为固体的焊球置载在电连接部14上。粘焊锡用的助焊剂56，用来提高焊锡58的浸润性并且防止完成后的外部端子60的表面的氧化，可以在设置焊锡58之前事先设置在电连接部14上。焊锡58，例如包含有锡(Sn)。
之后，如图4所示，经过回流工序，在电连接部14上形成外部端子60。之后，通过清洗，将残存在外部端子60上的助焊剂56去除。
在多个内插器10的集合体中进行以上工序的情况下，进行个别切断从而得到内插器10。这样，就能够制造出图4所示的半导体装置1。
根据本实施方式中的半导体装置的制造方法，由于能够通过料浆54中含有的酸，将覆盖在电连接部14的表面上的氧化膜15去除，因此可以提高之后进行的设置焊锡58的工序的可靠性。详细的说，即使不形成电镀保护膜，也能够防止电连接部14的氧化，从而能够防止因电镀保护膜形成的硬且脆的合金层，防止外部端子的机械可靠性的降低。另外，通过防止电连接部14的表面的氧化，能够可靠地实现焊锡与电连接部14的电导通。另外，由于通过进行料浆54的涂布工序以及清洗工序，能够去除氧化膜15，因此与事先形成电镀保护膜的工序相比，制造工序极为简单。
接下来，对本实施方式的变形例进行说明。图5为外部端子形成工序之前的内插器的俯视图。本变形例中，对多个电连接部14的一部分，进行上述料浆54的涂布工序以及清洗工序。
如图5所示，多个电连接部14，分别在内插器10上排列成多行多列。例如多个电连接部14的排列形态可以是矩形。而且，本变形例中，对多个电连接部14中容易施加应力的位置，进行上述的料浆54的涂布工序以及清洗工序。可对其他的电连接部14，为了防止氧化而形成电镀保护膜。这样一来，能够提高容易施加应力的部分的机械强度，同时还能发挥形成电镀保护膜的优点(例如提高温度循环可靠性)。另外，这里的应力，包括因内插器10或半导体芯片20的膨胀或收缩而施加的应力。
例如，可以对位于多行多列的外侧的端部(包括最外侧)上的电连接部14a(仅)，或对位于多行多列的外侧的角部上的电连接部14b(仅)，进行料浆54的涂布工序以及清洗工序。
另外，如图5所示，在多个电连接部14在围着给定区域62(例如半导体芯片置载区域)的区域中排列成多行多列的情况下，可以对位于最接近给定区域62的内侧的端部(包括最内侧)上的电连接部14c(仅)，或对给定区域62的角部所对应的电连接部14d(仅)，进行料浆54的涂布工序以及清洗工序。另外，可对电连接部14a(或电连接部14b)与电连接部14c(或电连接部14d)，一起进行料浆54的涂布工序以及清洗工序。
另外，本变形例中所使用的半导体装置，可以是扇入型、扇出型或扇入扇出型中的任意一种。多个电连接部14，如果是扇入型则只设置在半导体芯片20的置载区域的内侧，如果是扇出型则只设置在半导体芯片20的置载区域的外侧，如果是扇入扇出型则设置在半导体芯片20的置载区域的内侧以及外侧。
通过本变形例，由于例如不会因电镀保护膜造成机械可靠性的降低，因此如果对容易施加应力的电连接部14a～14d进行，则很有效果。
(第2实施方式)
图6～图8为表示本发明的第2实施方式中的半导体装置的制造方法的图。
本实施方式中，准备半导体基板120(参照图6)，并对半导体基板120的电极焊盘(电连接部)124，实施第1实施方式中所说明的料浆的涂布工序以及清洗工序，形成外部端子160(参照图7)。外部端子160由导电材料构成，例如可由焊锡或金(Au)等形成。在以晶片状态进行本工序的情况下，准备出半导体晶片作为半导体基板120。半导体晶片，被在外部端子160的形成工序完成之后切断，以便得到多个独立的半导体芯片。
半导体基板120，具有集成电路122以及与其电连接的电极焊盘(Al焊盘)124。电极焊盘124，一般位于半导体晶片的各个半导体芯片所对应的区域的端部(例如相面对的2边或4边)。另外，半导体基板120的电极焊盘124侧的表面上，设有钝化膜128。
如图8所示，作为本实施方式的变形例，准备出在包含集成电路222的区域中设有电极焊盘224的半导体基板220，并对该半导体基板220的电极焊盘224实施上述料浆的涂布工序以及清洗工序。多个电极焊盘224，被在集成电路222上(详细的说在钝化膜126上)排列成多行多列。
根据本变形例，由于电极焊盘224设置在集成电路222上，因此要求能耐应力的构造，而通过使用本变形例，能够满足该要求。
另外，本变形例还能够应用于第1实施方式的变形例中。即，可以只对多个电极焊盘224中容易施加机械应力的位置，实施上述料浆的涂布工序以及清洗工序。
(第3实施方式)
图9～图11为本发明的第3实施方式中的半导体装置的制造方法。图10为图9的X-X线剖面图。
本实施方式中，准备出半导体基板320，其被在所谓晶片级中实施过再配置布线(参照图10)，并对半导体基板320的电连接部(例如突起)332，实施第1实施方式中所说明的料浆的涂布工序以及清洗工序，形成外部端子360(参照图11)。外部端子360由导电材料构成，例如可由焊锡或金(Au)等形成。在以晶片状态进行本工序的情况下，准备出半导体晶片作为半导体基板320。半导体晶片被在外部端子360的形成工序完成之后切断，以便得到多个独立的半导体芯片。
半导体基板320，具有集成电路322以及与其电连接的电极焊盘(Al焊盘)324。电极焊盘324，一般位于半导体晶片的各个半导体芯片所对应的区域的端部(例如相面对的2边或4边)。另外，半导体基板320的电极焊盘324侧的表面上，设有钝化膜326。
半导体基板320中，在集成电路322侧的面上形成有树脂层328。树脂层328，是后述的布线层330的电连接部332的基底层。树脂层328，例如形成得比多个电极焊盘324的排列区域更靠内侧。作为树脂层328的材料，例如有聚酰亚胺树脂、硅变性聚酰亚胺树脂、环氧树脂、硅变性环氧树脂、苯并环丁烯(BCB；benzocyclobutene)、聚苯并恶唑(PBO；polybenzoxazole)等。
半导体基板320上，形成有与电极焊盘324电连接的布线层330。布线层330，形成为从电极焊盘324到树脂层328上，具有形成在树脂层328上的电连接部(例如突起)332。布线层330，可通过层积例如铜(Cu)、铬(Cr)、钛(Ti)、镍(Ni)、钨化钛(TiW)、金(Au)、铝(Al)、钒化镍(NiV)、钨(W)中的任意一种或多种来形成。另外，多个电连接部332，被在树脂层328上排列为多行多列。
另外，半导体基板320上设有树脂层334，其将布线层330的一部分覆盖起来。树脂层334，避开布线层330的电连接部332(的至少中央部)形成。树脂层334，可以是阻焊剂。
如图11所示，在对半导体基板320的电连接部332形成了外部端子360之后，为了加固外部端子360的根部，可以在避开外部端子360的上端部的区域上再设置树脂层336。
另外，本实施方式还能够应用于第1实施方式的变形例中。即，可以只对多个电连接部332中容易施加机械应力的位置，实施上述料浆的涂布工序以及清洗工序。
(第4实施方式)
图12以及图13为表示本发明的第4实施方式中的电连接部的处理方法的图。
本实施方式中，对形成在母板410上的电连接部(例如突起)412，实施第1实施方式中所说明的料浆的涂布工序以及清洗工序。母板410中，避开电连接部412，设有保护膜(例如阻焊剂)414。
母板410是用来置载多个电子部件的基板，作为其例子可以列举出：刚性基板、挠性基板、挠性刚性基板、或装配基板。作为电子部件可以列举出：半导体装置、光器件、电阻器、电容器、线圈、振荡器、滤波器、温度传感器、热敏电阻、变阻器、旋钮或熔丝等。例如，在料浆的涂布工序以及清洗工序结束之后，将例如半导体装置作为电子部件焊接在母板410的电连接部412上(参照图13)。
(第5实施方式)
作为本发明的第5实施方式中的电子机器，图14中示出了笔记本型个人计算机1000，图15中示出了移动电话2000。本实施方式中的电子机器，内置有通过上述任意一个实施方式制造的半导体装置。
本发明并不仅限于上述实施方式，还能够进行各种变形。例如，本发明包括与实施方式中所说明的构成实质上相同的构成(例如功能、方法以及结果相同的构成，或目的与结果相同的构成)。另外，本发明还包括替换了用实施方式说明的构成中的非本质部分所得到的构成。另外，本发明还包括起到与实施方式中所说明的构成相同的作用效果的构成，或能够实现相同目的的构成。另外，本发明还包括在实施方式中所说明的构成中添加了公知技术后所得到的构成。

Claims (12)

1.一种半导体装置的制造方法，其特征在于，包括：
(a)在与半导体基板电导通、且排列为多行多列的多个电连接部之中，只在位于上述多行多列的外侧的角部的第1电连接部上，设置含酸的料浆；
(b)通过清洗上述第1电连接部，从上述第1电连接部上去除上述料浆；以及，
(c)在上述多个电连接部上，设置导电材料，
在上述(a)工序之前，在上述多个电连接部之中上述第1电连接部以外的第2电连接部上，形成有电镀保护膜。
2.如权利要求1所述的半导体装置的制造方法，其特征在于：
上述导电材料由焊锡构成。
3.如权利要求2所述的半导体装置的制造方法，其特征在于：
上述(c)工序中，借助助焊剂在上述多个电连接部上设置上述焊锡。
4.如权利要求3所述的半导体装置的制造方法，其特征在于：
上述(a)工序中所设置的上述料浆，由与上述(c)工序中所设置的助焊剂相同的材料构成。
5.如权利要求3所述的半导体装置的制造方法，其特征在于：
上述(a)工序中所设置的上述料浆，由比上述(c)工序中所设置的助焊剂含酸比率大的材料构成。
6.如权利要求3所述的半导体装置的制造方法，其特征在于：
上述(a)工序中所设置的上述料浆，由含有比上述(c)工序中所设置的助焊剂的酸还原能力大的酸的材料构成。
7.如权利要求1～6的任一项所述的半导体装置的制造方法，其特征在于：
上述(a)以及(b)工序，在大气或氧气环境下进行。
8.如权利要求1～6的任一项所述的半导体装置的制造方法，其特征在于：
上述料浆的酸是有机酸。
9.如权利要求1～6的任一项所述的半导体装置的制造方法，其特征在于：
上述料浆的酸是无机酸。
10.如权利要求1～6的任一项所述的半导体装置的制造方法，其特征在于：
上述半导体基板，置载于内插器中；
上述多个电连接部，是形成在内插器中的突起。
11.如权利要求1～6的任一项所述的半导体装置的制造方法，其特征在于：
上述多个电连接部，是形成在上述半导体基板上的电极焊盘。
12.如权利要求1～6的任一项所述的半导体装置的制造方法，其特征在于：
上述半导体基板上，形成有树脂层；
上述多个电连接部，是形成在上述树脂层上的突起。
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