KR20090126762A - 반도체칩이 실장된 인쇄회로기판 및 그 제조방법 - Google Patents
반도체칩이 실장된 인쇄회로기판 및 그 제조방법 Download PDFInfo
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- KR20090126762A KR20090126762A KR1020080053041A KR20080053041A KR20090126762A KR 20090126762 A KR20090126762 A KR 20090126762A KR 1020080053041 A KR1020080053041 A KR 1020080053041A KR 20080053041 A KR20080053041 A KR 20080053041A KR 20090126762 A KR20090126762 A KR 20090126762A
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Abstract
Description
유형 | 구성 | 녹는점(℃) | 비중 |
주석/납(Tin/Lead) | Sn/37Pb | 183 | 8.4 |
Sn/36Pb/2Ag | 179~191 | 8.4 | |
Sn/90Pb | 275~302 | 10.7 | |
Sn/10Pb | 183~213 | 7.55 | |
무연(Lead-free) | Sn/2.5Ag/0.5Cu | 217~219 | 7.4 |
Sn/4Ag/0.5Cu | 217~219 | 7.4 | |
Sn/3.5Ag | 219~223 | 7.36 | |
Sn/3Ag/0.5Cu | 217~219 | 7.4 |
Claims (11)
- 상면에 노출된 접속패드를 구비하는 반도체칩;상기 접속패드 상에 형성된 제1 융점을 가지는 제1 솔더볼;최외각 회로층에 형성된 외부접속단자를 구비하는 인쇄회로기판; 및상기 외부접속단자 상에 형성되고 상기 제1 솔더볼과 접속되며, 상기 제1 융점보다 높은 제2 융점을 갖는 제2 솔더볼;을 포함하는 반도체칩이 실장된 인쇄회로기판.
- 제1항에 있어서,상기 반도체칩 상면을 덮어 봉합하되, 상기 제1 솔더볼을 노출하는 개구부를 갖는 수지봉합부를 더 포함하는 반도체칩이 실장된 인쇄회로기판.
- 제1항에 있어서,상기 제2 솔더볼은 구형 또는 반구형 형상인 반도체칩이 실장된 인쇄회로기판.
- 제1항에 있어서,상기 제1 융점과 상기 제2 융점과의 온도 차이는 15℃ 보다 큰 반도체칩이 실장된 인쇄회로기판.
- (A) 반도체칩의 상면에 노출된 접속패드에 제1 융점을 갖는 제1 솔더볼을 형성하는 단계;(B) 인쇄회로기판의 최외층에 형성된 외부접속단자에 상기 제1 융점보다 높은 제2 융점을 갖는 제2 솔더볼을 형성하는 단계; 및(C) 상기 제1 융점과 상기 제2 융점 사이의 온도에서 상기 제1 솔더볼과 상기 제2 솔더볼을 접속시키는 단계;를 포함하는 반도체칩이 실장된 인쇄회로기판의 제조방법.
- 제5항에 있어서,상기 제2 솔더볼은 구형 또는 반구형 형상인 반도체칩이 실장된 인쇄회로기판의 제조방법.
- 제5항에 있어서,상기 제1 융점과 상기 제2 융점과의 온도 차이는 15℃ 보다 큰 반도체칩이 실장된 인쇄회로기판의 제조방법.
- 제5항에 있어서,상기 제1 솔더볼을 형성하는 단계는,(ⅰ) 반도체칩 상부에 접속패드를 노출하는 제1 솔더볼 형성용 개구부를 갖 는 제1 마스크를 배치하는 단계;(ⅱ) 상기 제1 마스크에 형성된 개구부에 제1 솔더를 충전하는 단계; 및(ⅲ) 상기 제1 마스크를 제거하고 리플로우 공정을 수행하여 제1 솔더볼을 형성하는 단계;를 포함하는 반도체칩이 실장된 인쇄회로기판의 제조방법.
- 제5항에 있어서,상기 제2 솔더볼을 형성하는 단계는,(ⅰ) 기판의 최외층에 외부접속단자를 노출하는 제2 솔더볼 형성용 개구부를 갖는 제2 마스크를 배치하는 단계;(ⅱ) 상기 제2 마스크에 형성된 개구부에 제2 솔더를 충전하는 단계; 및(ⅲ) 상기 제2 마스크를 제거하고 리플로우 공정을 수행하여 제2 솔더볼을 형성하는 단계;를 포함하는 반도체칩이 실장된 인쇄회로기판의 제조방법.
- 제5항에 있어서,상기 제1 솔더볼과 제2 솔더볼을 접속하는 단계는,(ⅰ) 상기 제1 솔더볼과 상기 제2 솔더볼의 노출면에 플럭스를 도포하는 단계; 및(ⅱ) 상기 제1 융점과 상기 제2 융점 사이의 온도에서 수행되는 리플로우 공 정으로 상기 제1 솔더볼 및 제2 솔더볼을 접속하는 단계;를 포함하는 반도체칩이 실장된 인쇄회로기판의 제조방법.
- 제5항에 있어서,상기 제1 솔더볼을 형성하는 단계 이후에, 상기 반도체칩 상면을 덮어 봉합하되, 상기 제1 솔더볼을 노출하는 개구부를 갖는 수지봉합부를 형성하는 단계를 더 포함하는 반도체칩이 실장된 인쇄회로기판의 제조방법.
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US12/232,252 US20090302468A1 (en) | 2008-06-05 | 2008-09-12 | Printed circuit board comprising semiconductor chip and method of manufacturing the same |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI245402B (en) | 2002-01-07 | 2005-12-11 | Megic Corp | Rod soldering structure and manufacturing process thereof |
KR100723497B1 (ko) * | 2005-08-11 | 2007-06-04 | 삼성전자주식회사 | 솔더볼 랜드에 두 종류 이상의 표면처리부를 갖는인쇄회로기판 및 이를 포함하는 반도체 패키지 |
TWI399974B (zh) * | 2010-03-12 | 2013-06-21 | Primax Electronics Ltd | 攝像模組之組裝方法 |
CN102457660A (zh) * | 2010-10-25 | 2012-05-16 | 致伸科技股份有限公司 | 摄像模块的组装方法 |
KR101712459B1 (ko) * | 2010-11-29 | 2017-03-22 | 삼성전자 주식회사 | 적층 패키지의 제조 방법, 및 이에 의하여 제조된 적층 패키지의 실장 방법 |
US9355978B2 (en) | 2013-03-11 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging devices and methods of manufacture thereof |
CN202816916U (zh) * | 2012-10-10 | 2013-03-20 | 矽力杰半导体技术(杭州)有限公司 | 一种倒装封装装置 |
US9385098B2 (en) * | 2012-11-21 | 2016-07-05 | Nvidia Corporation | Variable-size solder bump structures for integrated circuit packaging |
US10483132B2 (en) | 2012-12-28 | 2019-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-passivation interconnect structure and method of forming the same |
CN108241240B (zh) * | 2018-02-08 | 2021-05-14 | 上海天马微电子有限公司 | 一种显示面板以及显示装置 |
US10950573B2 (en) * | 2019-03-19 | 2021-03-16 | International Business Machines Corporation | Lead-free column interconnect |
CN113380728A (zh) * | 2021-05-21 | 2021-09-10 | 南通通富微电子有限公司 | 一种扇出型封装方法及扇出型封装器件 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63187638A (ja) | 1987-01-30 | 1988-08-03 | Hitachi Ltd | 半導体チツプ接続方法 |
US5391514A (en) * | 1994-04-19 | 1995-02-21 | International Business Machines Corporation | Low temperature ternary C4 flip chip bonding method |
US5539153A (en) * | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
US5627112A (en) * | 1995-11-13 | 1997-05-06 | Rockwell International Corporation | Method of making suspended microstructures |
JP3863213B2 (ja) * | 1996-03-27 | 2006-12-27 | 株式会社ルネサステクノロジ | 半導体装置 |
US6225206B1 (en) * | 1999-05-10 | 2001-05-01 | International Business Machines Corporation | Flip chip C4 extension structure and process |
JP2001144204A (ja) * | 1999-11-16 | 2001-05-25 | Nec Corp | 半導体装置及びその製造方法 |
US6717245B1 (en) * | 2000-06-02 | 2004-04-06 | Micron Technology, Inc. | Chip scale packages performed by wafer level processing |
KR100398716B1 (ko) | 2000-06-12 | 2003-09-19 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 모듈 및 반도체 장치를 접속한 회로 기판 |
US6908784B1 (en) * | 2002-03-06 | 2005-06-21 | Micron Technology, Inc. | Method for fabricating encapsulated semiconductor components |
US6740577B2 (en) * | 2002-05-21 | 2004-05-25 | St Assembly Test Services Pte Ltd | Method of forming a small pitch torch bump for mounting high-performance flip-flop devices |
US6818988B2 (en) * | 2002-07-25 | 2004-11-16 | International Business Machines Corporation | Method of making a circuitized substrate and the resultant circuitized substrate |
US7230331B2 (en) * | 2003-04-22 | 2007-06-12 | Industrial Technology Research Institute | Chip package structure and process for fabricating the same |
JP2005011838A (ja) * | 2003-06-16 | 2005-01-13 | Toshiba Corp | 半導体装置及びその組立方法 |
US20050082670A1 (en) * | 2003-09-11 | 2005-04-21 | Nordson Corporation | Method for preapplying a viscous material to strengthen solder connections in microelectronic packaging and microelectronic packages formed thereby |
US7042088B2 (en) * | 2004-03-10 | 2006-05-09 | Ho Tony H | Package structure with two solder arrays |
US7880313B2 (en) * | 2004-11-17 | 2011-02-01 | Chippac, Inc. | Semiconductor flip chip package having substantially non-collapsible spacer |
-
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- 2008-06-05 KR KR1020080053041A patent/KR100969441B1/ko active IP Right Grant
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