CN100365737C - 布线材料和使用该材料的布线板 - Google Patents

布线材料和使用该材料的布线板 Download PDF

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Publication number
CN100365737C
CN100365737C CNB038110857A CN03811085A CN100365737C CN 100365737 C CN100365737 C CN 100365737C CN B038110857 A CNB038110857 A CN B038110857A CN 03811085 A CN03811085 A CN 03811085A CN 100365737 C CN100365737 C CN 100365737C
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CN
China
Prior art keywords
wiring
film
alloy
weight
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038110857A
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English (en)
Chinese (zh)
Other versions
CN1653557A (zh
Inventor
井上一吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002143312A external-priority patent/JP4738705B2/ja
Priority claimed from JP2002143318A external-priority patent/JP2003342653A/ja
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Publication of CN1653557A publication Critical patent/CN1653557A/zh
Application granted granted Critical
Publication of CN100365737C publication Critical patent/CN100365737C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C22C5/08—Alloys based on silver with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H10W20/4435—Noble-metal alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB038110857A 2002-05-17 2003-04-14 布线材料和使用该材料的布线板 Expired - Fee Related CN100365737C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002143312A JP4738705B2 (ja) 2002-05-17 2002-05-17 配線材料及びそれを用いた配線基板
JP143318/2002 2002-05-17
JP2002143318A JP2003342653A (ja) 2002-05-17 2002-05-17 配線材料及びそれを用いた配線基板
JP143312/2002 2002-05-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN200710193844.2A Division CN101183570A (zh) 2002-05-17 2003-04-14 布线材料和使用该材料的布线板

Publications (2)

Publication Number Publication Date
CN1653557A CN1653557A (zh) 2005-08-10
CN100365737C true CN100365737C (zh) 2008-01-30

Family

ID=29552300

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038110857A Expired - Fee Related CN100365737C (zh) 2002-05-17 2003-04-14 布线材料和使用该材料的布线板

Country Status (8)

Country Link
US (2) US20050127364A1 (enExample)
EP (2) EP2161726A1 (enExample)
KR (1) KR20050014822A (enExample)
CN (1) CN100365737C (enExample)
DE (1) DE60324553D1 (enExample)
SG (1) SG152056A1 (enExample)
TW (2) TW201009849A (enExample)
WO (1) WO2003098641A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103451689A (zh) * 2012-06-01 2013-12-18 日立电线株式会社 铜系材料及其制造方法

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KR100750922B1 (ko) * 2001-04-13 2007-08-22 삼성전자주식회사 배선 및 그 제조 방법과 그 배선을 포함하는 박막트랜지스터 기판 및 그 제조 방법
CN100365737C (zh) * 2002-05-17 2008-01-30 出光兴产株式会社 布线材料和使用该材料的布线板
KR100590270B1 (ko) * 2004-05-11 2006-06-19 삼성에스디아이 주식회사 유기 전계 발광 표시 장치
KR101171175B1 (ko) * 2004-11-03 2012-08-06 삼성전자주식회사 도전체용 식각액 및 이를 이용한 박막 트랜지스터표시판의 제조 방법
KR100959460B1 (ko) * 2007-11-16 2010-05-25 주식회사 동부하이텍 투명 박막 트랜지스터 및 투명 박막 트랜지스터의 제조방법
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
KR20110084523A (ko) 2008-11-07 2011-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI396314B (zh) * 2009-07-27 2013-05-11 Au Optronics Corp 畫素結構、有機電激發光顯示單元及其製造方法
KR101953215B1 (ko) * 2012-10-05 2019-03-04 삼성디스플레이 주식회사 식각 조성물, 금속 배선 및 표시 기판의 제조방법
JP5742859B2 (ja) * 2013-01-30 2015-07-01 日立金属株式会社 高速伝送ケーブル用導体、及びその製造方法、並びに高速伝送ケーブル
US9909196B2 (en) 2013-03-01 2018-03-06 Jx Nippon Mining & Metals Corporation High-purity copper-cobalt alloy sputtering target
JP6287126B2 (ja) * 2013-11-29 2018-03-07 日立金属株式会社 プリント配線板及びその製造方法
JP6172573B2 (ja) * 2013-11-29 2017-08-02 日立金属株式会社 はんだ接合材料とその製造方法、及びはんだ接合用部材、並びに太陽電池モジュール
JP6123655B2 (ja) * 2013-11-29 2017-05-10 日立金属株式会社 銅箔及びその製造方法
TWI657154B (zh) * 2016-04-28 2019-04-21 日商日鐵住金新材料股份有限公司 半導體裝置用接合線

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JPS5249916A (en) * 1975-10-18 1977-04-21 Mitsubishi Marorii Yakin Kogyo Kk Material for electric contact consisting of ag-metal oxides
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JPS58133339A (ja) * 1982-01-31 1983-08-09 Matsushita Electric Works Ltd 電気接点材料
JPS6026625A (ja) * 1983-07-22 1985-02-09 Tanaka Kikinzoku Kogyo Kk 摺動接点材料
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JP2001342560A (ja) * 2000-05-31 2001-12-14 Toshiba Corp スパッタリングターゲット

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Publication number Priority date Publication date Assignee Title
JPS5249916A (en) * 1975-10-18 1977-04-21 Mitsubishi Marorii Yakin Kogyo Kk Material for electric contact consisting of ag-metal oxides
US4290806A (en) * 1978-09-25 1981-09-22 Furukawa Metals Company, Ltd. Copper alloy for reliable electrical connection
JPS55154541A (en) * 1979-05-22 1980-12-02 Furukawa Electric Co Ltd:The High-tensile electrically-conductive copper alloy having low softening temperature
JPS58133339A (ja) * 1982-01-31 1983-08-09 Matsushita Electric Works Ltd 電気接点材料
JPS6026625A (ja) * 1983-07-22 1985-02-09 Tanaka Kikinzoku Kogyo Kk 摺動接点材料
JPS6137937A (ja) * 1984-07-30 1986-02-22 Nippon Gakki Seizo Kk 接点材料
JPS61130449A (ja) * 1984-11-29 1986-06-18 Tanaka Kikinzoku Kogyo Kk すり接点材料
US4732731A (en) * 1985-08-29 1988-03-22 The Furukawa Electric Co., Ltd. Copper alloy for electronic instruments and method of manufacturing the same
JPH02107732A (ja) * 1988-10-17 1990-04-19 Dowa Mining Co Ltd 高強度高導電性銅基合金
JPH1197609A (ja) * 1997-09-17 1999-04-09 Dowa Mining Co Ltd 酸化膜密着性に優れたリードフレーム用銅合金及びその製造方法
JP2001192752A (ja) * 1999-07-12 2001-07-17 Sony Corp 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品
JP2001102592A (ja) * 1999-09-30 2001-04-13 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法
JP2001196371A (ja) * 2000-01-12 2001-07-19 Furontekku:Kk 銅配線基板及びその製造方法並びに液晶表示装置
JP2001342560A (ja) * 2000-05-31 2001-12-14 Toshiba Corp スパッタリングターゲット

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103451689A (zh) * 2012-06-01 2013-12-18 日立电线株式会社 铜系材料及其制造方法
CN103451689B (zh) * 2012-06-01 2017-08-11 日立金属株式会社 铜系材料的制造方法及由该方法制造的铜系材料

Also Published As

Publication number Publication date
SG152056A1 (en) 2009-05-29
US20050127364A1 (en) 2005-06-16
EP1507267B1 (en) 2008-11-05
TW201009849A (en) 2010-03-01
EP1507267A4 (en) 2006-02-08
TW200406789A (en) 2004-05-01
KR20050014822A (ko) 2005-02-07
WO2003098641A1 (fr) 2003-11-27
EP2161726A1 (en) 2010-03-10
CN1653557A (zh) 2005-08-10
DE60324553D1 (enExample) 2008-12-18
US20070228575A1 (en) 2007-10-04
EP1507267A1 (en) 2005-02-16

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