CN100347609C - 正性光敏树脂组合物、制备正性光敏树脂组合物的方法及半导体设备 - Google Patents

正性光敏树脂组合物、制备正性光敏树脂组合物的方法及半导体设备 Download PDF

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Publication number
CN100347609C
CN100347609C CNB018183344A CN01818334A CN100347609C CN 100347609 C CN100347609 C CN 100347609C CN B018183344 A CNB018183344 A CN B018183344A CN 01818334 A CN01818334 A CN 01818334A CN 100347609 C CN100347609 C CN 100347609C
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CN
China
Prior art keywords
filler
sensitive resin
positive light
weight portion
alkali soluble
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Expired - Fee Related
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CNB018183344A
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English (en)
Chinese (zh)
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CN1545642A (zh
Inventor
平野孝
冈明周作
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Intel Corp
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Intel Corp
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Publication of CN1545642A publication Critical patent/CN1545642A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Polyamides (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CNB018183344A 2000-10-31 2001-10-09 正性光敏树脂组合物、制备正性光敏树脂组合物的方法及半导体设备 Expired - Fee Related CN100347609C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000333560 2000-10-31
JP333560/00 2000-10-31
JP333560/2000 2000-10-31

Publications (2)

Publication Number Publication Date
CN1545642A CN1545642A (zh) 2004-11-10
CN100347609C true CN100347609C (zh) 2007-11-07

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CNB018183344A Expired - Fee Related CN100347609C (zh) 2000-10-31 2001-10-09 正性光敏树脂组合物、制备正性光敏树脂组合物的方法及半导体设备

Country Status (8)

Country Link
US (1) US6908717B2 (fr)
EP (1) EP1331517B1 (fr)
JP (1) JP3958011B2 (fr)
KR (1) KR100766648B1 (fr)
CN (1) CN100347609C (fr)
DE (1) DE60142844D1 (fr)
TW (1) TWI297812B (fr)
WO (1) WO2002037184A1 (fr)

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TW574620B (en) * 2001-02-26 2004-02-01 Toray Industries Precursor composition of positive photosensitive resin and display device using it
JP4337439B2 (ja) 2002-08-22 2009-09-30 セイコーエプソン株式会社 電気泳動装置、電子機器
JP4317870B2 (ja) * 2003-03-11 2009-08-19 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規な感光性樹脂組成物
JP2004310076A (ja) * 2003-03-26 2004-11-04 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物並びに半導体装置及び表示素子
JP2004306018A (ja) * 2003-03-26 2004-11-04 Sumitomo Bakelite Co Ltd 金属上への感光性樹脂膜の形成方法並びに半導体装置及び表示素子
KR101067828B1 (ko) * 2003-06-06 2011-09-27 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 신규한 감광성 수지 조성물들
EP2381308B1 (fr) * 2003-06-23 2015-07-29 Sumitomo Bakelite Co., Ltd. Composition de résine photosensible à action positive, procédé de fabrication de film de résine à motifs, dispositif semi-conducteur, dispositif d'affichage et procédé de production du dispositif semi-conducteur et dispositif d'affichage
TW200512543A (en) * 2003-08-06 2005-04-01 Sumitomo Bakelite Co Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
EP1708026B1 (fr) 2004-01-14 2011-10-05 Hitachi Chemical DuPont Microsystems Ltd. Composition polymere photosensible, procede pour generer un motif et composant electronique
US7211728B2 (en) * 2004-08-17 2007-05-01 Jds Uniphase Corporation Optical cage system preventing insertion of incorrect module
EP1815515A4 (fr) * 2004-10-29 2009-03-11 Flipchip Internat L L C Boitier de dispositif semi-conducteur comprenant une couche polymere surmontee d'un bossage
KR101255512B1 (ko) * 2006-06-30 2013-04-16 엘지디스플레이 주식회사 Ｔｆｔ 어레이 기판의 제조방법
JP2008218552A (ja) * 2007-03-01 2008-09-18 Nec Corp 電子部品の実装基板および実装方法
US7973418B2 (en) * 2007-04-23 2011-07-05 Flipchip International, Llc Solder bump interconnect for improved mechanical and thermo-mechanical performance
JP5246441B2 (ja) * 2007-06-05 2013-07-24 日産化学工業株式会社 ポジ型感光性樹脂組成物及びポリヒドロキシアミド樹脂
TWI424272B (zh) * 2007-08-10 2014-01-21 Sumitomo Bakelite Co 正型感光性樹脂組成物，硬化膜，保護膜，絕緣膜及半導體裝置
JP5061792B2 (ja) * 2007-08-21 2012-10-31 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜およびそれを用いた半導体装置、表示体装置。
KR101015856B1 (ko) * 2008-10-24 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5425005B2 (ja) * 2009-08-19 2014-02-26 日本電波工業株式会社 圧電部品及びその製造方法
KR101200140B1 (ko) * 2009-08-31 2012-11-12 금호석유화학 주식회사 포지티브형 감광성 조성물
US20130108963A1 (en) * 2010-06-03 2013-05-02 Sumitomo Bakelite Co., Ltd. Photosensitive resin composition and method for preparing photosensitive composition
KR20140083693A (ko) * 2012-12-26 2014-07-04 제일모직주식회사 표시장치 절연막용 감광성 수지 조성물, 및 이를 이용한 표시장치 절연막 및 표시장치
KR101812580B1 (ko) * 2013-12-05 2017-12-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 이를 이용한 표시 소자
WO2016148176A1 (fr) * 2015-03-19 2016-09-22 東レ株式会社 Composition de résine photosensible positive, film durci, substrat de transistor à couches minces, film isolant intercouche, dispositif d'affichage et procédés permettant de produire ces derniers
TW201741765A (zh) * 2015-12-17 2017-12-01 陶氏全球科技責任有限公司 具有高介電常數之光可成像薄膜
TW201802587A (zh) * 2016-03-24 2018-01-16 陶氏全球科技責任有限公司 具有高介電常數之光可成像薄膜

Citations (5)

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Publication number Priority date Publication date Assignee Title
US5340683A (en) * 1992-07-22 1994-08-23 Fuji Photo Film Co., Ltd. Presensitized plate having surface-grained and anodized aluminum substrate with light-sensitive layer containing quinone diazide sulfonic acid ester of particular polyhydroxy compound
EP0807852A1 (fr) * 1996-05-13 1997-11-19 Sumitomo Bakelite Company Limited Composition à base de résine photosensible, de type positif et dispositif semi-conducteur utilisant celle-ci
JPH1087960A (ja) * 1996-09-20 1998-04-07 Kanegafuchi Chem Ind Co Ltd ソルダーレジスト用樹脂組成物
JPH1152570A (ja) * 1997-08-05 1999-02-26 Mitsui Chem Inc 感光性樹脂組成物
JP2000122269A (ja) * 1998-10-14 2000-04-28 Konica Corp 平版印刷版用支持体及び感熱性平版印刷版材料

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Publication number Priority date Publication date Assignee Title
US5340683A (en) * 1992-07-22 1994-08-23 Fuji Photo Film Co., Ltd. Presensitized plate having surface-grained and anodized aluminum substrate with light-sensitive layer containing quinone diazide sulfonic acid ester of particular polyhydroxy compound
EP0807852A1 (fr) * 1996-05-13 1997-11-19 Sumitomo Bakelite Company Limited Composition à base de résine photosensible, de type positif et dispositif semi-conducteur utilisant celle-ci
JPH1087960A (ja) * 1996-09-20 1998-04-07 Kanegafuchi Chem Ind Co Ltd ソルダーレジスト用樹脂組成物
JPH1152570A (ja) * 1997-08-05 1999-02-26 Mitsui Chem Inc 感光性樹脂組成物
JP2000122269A (ja) * 1998-10-14 2000-04-28 Konica Corp 平版印刷版用支持体及び感熱性平版印刷版材料

Also Published As

Publication number Publication date
EP1331517A1 (fr) 2003-07-30
KR20040004422A (ko) 2004-01-13
CN1545642A (zh) 2004-11-10
WO2002037184A1 (fr) 2002-05-10
TWI297812B (fr) 2008-06-11
JP2002202593A (ja) 2002-07-19
JP3958011B2 (ja) 2007-08-15
US20040023147A1 (en) 2004-02-05
EP1331517B1 (fr) 2010-08-18
EP1331517A4 (fr) 2007-04-04
KR100766648B1 (ko) 2007-10-15
US6908717B2 (en) 2005-06-21
DE60142844D1 (de) 2010-09-30

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