CH376584A - Verfahren zum Herstellen einkristalliner Halbleiterstäbe - Google Patents

Verfahren zum Herstellen einkristalliner Halbleiterstäbe

Info

Publication number
CH376584A
CH376584A CH7245559A CH7245559A CH376584A CH 376584 A CH376584 A CH 376584A CH 7245559 A CH7245559 A CH 7245559A CH 7245559 A CH7245559 A CH 7245559A CH 376584 A CH376584 A CH 376584A
Authority
CH
Switzerland
Prior art keywords
crystal semiconductor
producing single
semiconductor rods
rods
producing
Prior art date
Application number
CH7245559A
Other languages
English (en)
Inventor
Karl Dr Phil Siebertz
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH376584A publication Critical patent/CH376584A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/16—Dry methods smelting of sulfides or formation of mattes with volatilisation or condensation of the metal being produced
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/003—Coating on a liquid substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH7245559A 1954-06-13 1959-04-23 Verfahren zum Herstellen einkristalliner Halbleiterstäbe CH376584A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES39578A DE976899C (de) 1954-06-13 1954-06-13 Gasentladungsanlage zur Herstellung eines Stabes aus hochreinem Silicium
DES40843A DE1042539B (de) 1954-06-13 1954-09-15 Verfahren zum Herstellen ultrareiner Halbleiterkristalle
DES58066A DE1151782B (de) 1954-06-13 1958-04-30 Verfahren zum Herstellen hochgereinigter einkristalliner Halbleiterstaebe

Publications (1)

Publication Number Publication Date
CH376584A true CH376584A (de) 1964-04-15

Family

ID=27212571

Family Applications (3)

Application Number Title Priority Date Filing Date
CH362061D CH362061A (de) 1954-06-13 1954-10-21 Verfahren zum Herstellen von reinem Bornitrid
CH355220D CH355220A (de) 1954-06-13 1954-10-21 Verfahren zur Herstellung eines kristallisierten Halbleiterstoffes
CH7245559A CH376584A (de) 1954-06-13 1959-04-23 Verfahren zum Herstellen einkristalliner Halbleiterstäbe

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CH362061D CH362061A (de) 1954-06-13 1954-10-21 Verfahren zum Herstellen von reinem Bornitrid
CH355220D CH355220A (de) 1954-06-13 1954-10-21 Verfahren zur Herstellung eines kristallisierten Halbleiterstoffes

Country Status (6)

Country Link
US (2) US2992984A (de)
CH (3) CH362061A (de)
DE (5) DE1017795B (de)
FR (3) FR1131422A (de)
GB (3) GB795191A (de)
NL (1) NL105537C (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
DE1141255B (de) * 1958-03-05 1962-12-20 Siemens Ag Verfahren zum Herstellen hochgereinigter einkristalliner Halbleiterstaebe
GB878765A (en) * 1956-11-05 1961-10-04 Plessey Co Ltd Improvements in and relating to processes for the manufacture of semiconductor materials
DE1109154B (de) * 1957-03-12 1961-06-22 Licentia Gmbh Verfahren zur Gewinnung von borbromid- bzw. borjodidfreiem Siliciumbromid bzw. -jodid
BE567204A (de) * 1957-04-30
DE1114170B (de) * 1957-07-03 1961-09-28 Int Standard Electric Corp Verfahren und Vorrichtung zur Herstellung von extrem reinem Halbleitermaterial
US3006734A (en) * 1957-11-14 1961-10-31 Plessey Co Ltd Process for preparing pure silicon
DE1081869B (de) * 1957-12-03 1960-05-19 Siemens Ag Verfahren zur Herstellung von Silicium-Einkristallen
DE1198321B (de) * 1958-01-06 1965-08-12 Int Standard Electric Corp Verfahren zur Herstellung von Halbleitermaterial grosser Reinheit
NL235008A (de) * 1958-01-11
US3116175A (en) * 1958-01-27 1963-12-31 Marvalaud Inc Method for forming bicrystalline specimens
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
DE1180346B (de) * 1958-03-14 1964-10-29 Gustav Weissenberg Dr H C Dr H Verfahren zum Herstellen hochreiner Kristalle, insbesondere aus Halbleiterstoffen
US3098741A (en) * 1958-04-03 1963-07-23 Wacker Chemie Gmbh Process for effecting crucibleless melting of materials and production of shaped bodies therefrom
DE1181669B (de) * 1958-06-03 1964-11-19 Wacker Chemie Gmbh Verfahren zum Herstellen von festen Verbindungen oder Legierungen
DE1719025A1 (de) * 1958-09-20 1900-01-01
DE1154796B (de) * 1958-12-16 1963-09-26 Western Electric Co Verfahren zum Reinigen von Silicium- oder Germaniumverbindungen
CH354427A (fr) * 1959-06-05 1961-05-31 Ind De Pierres Scient Hrand Dj Procédé de fabrication d'un corps de révolution, notamment d'un disque en pierre synthétique et installation pour la mise en oeuvre de ce procédé
NL256017A (de) * 1959-09-23 1900-01-01
NL244298A (de) * 1959-10-13
DE1128412B (de) * 1959-12-17 1962-04-26 Metallgesellschaft Ag Verfahren zur Herstellung von Reinstsilicium durch thermische Zersetzung von gasfoermigen Siliciumverbindungen
NL262949A (de) * 1960-04-02 1900-01-01
DE1211593B (de) * 1960-04-27 1966-03-03 Wacker Chemie Gmbh Verfahren zur tiegelfreien Herstellung hochreiner, elektrisch halbleitender, kristalliner Verbindungen
NL265528A (de) * 1960-06-02
DE1190918B (de) * 1960-06-24 1965-04-15 Wacker Chemie Gmbh Verfahren zur gezielten Dotierung von stabfoermigen Koerpern waehrend des Zonenschmelzens
DE1216842B (de) * 1960-09-30 1966-05-18 Karl Ernst Hoffmann Verfahren zur Herstellung von reinstem Silicium und Germanium
DE1227424B (de) * 1961-03-01 1966-10-27 Philips Nv Verfahren und Vorrichtung zum Zonenschmelzen eines aus einer Metallverbindung bestehenden stabfoermigen Koerpers
DE1245332B (de) * 1961-09-14 1967-07-27 Gen Electric Vorrichtung zur kontinuierlichen Herstellung von Einkristallen durch Abscheidung aus der Dampfphase
US3267529A (en) * 1961-10-04 1966-08-23 Heraeus Gmbh W C Apparatus for melting metals under high vacuum
US3239368A (en) * 1962-04-26 1966-03-08 Nra Inc Method of preparing thin films on substrates by an electrical discharge
US3303115A (en) * 1962-05-31 1967-02-07 Corning Glass Works Methods for forming materials of high purity by fusion
US3245761A (en) * 1962-10-11 1966-04-12 Norton Co Apparatus for making magnesium oxide crystals
DE1258397B (de) * 1962-11-15 1968-01-11 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung durch einkristallines Aufwachsen halbleitender Schichten mittels Transportreaktion
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
DE1444530B2 (de) * 1962-12-12 1970-10-01 Siemens AG, 1000 Berlin u. 8000 München Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial
US3259468A (en) * 1963-05-02 1966-07-05 Monsanto Co Slim crystalline rod pullers with centering means
GB1108741A (en) * 1963-09-19 1968-04-03 Ass Elect Ind Improvements in and relating to epitaxial layers of semiconductor materials
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
DE1248014B (de) * 1963-12-05 1967-08-24 Siemens Ag Verfahren zum Abscheiden von Halbleitermaterial unter Anwendung einer elektrischen Glimmentladung
BE676042A (de) * 1965-02-10 1966-06-16
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
FR1492063A (fr) * 1966-04-05 1967-08-18 Commissariat Energie Atomique Perfectionnement aux fours électriques haute fréquence pour la fabrication en continu de réfractaires électrofondus
GB1227331A (de) * 1967-04-14 1971-04-07
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
US4068025A (en) * 1971-03-22 1978-01-10 Brown, Boveri & Company Limited Method of applying a protective coating to a body
CH540995A (de) * 1971-03-22 1973-08-31 Bbc Brown Boveri & Cie Verfahren zum Aufbringen einer Schutzschicht auf einen Körper
US4087313A (en) * 1975-11-28 1978-05-02 Joseph Beril Milstein Process and apparatus for preparation of single crystals and textured polycrystals
DE2636348A1 (de) * 1976-08-12 1978-02-16 Wacker Chemitronic Verfahren zur herstellung von reinem, elementarem halbleitermaterial
US4102764A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp. High purity silicon production by arc heater reduction of silicon intermediates
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
US4102766A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Process for doping high purity silicon in an arc heater
JPS60246208A (ja) * 1984-05-21 1985-12-05 Toshiba Tungaloy Co Ltd 窒化ホウ素の製造方法
JPS63222011A (ja) * 1987-03-11 1988-09-14 Mitsubishi Metal Corp 多結晶シリコンの製造方法
EP3539924A1 (de) * 2018-03-14 2019-09-18 ETH Zurich Neuartige vinylphosphine und daraus erhältliche photoinitiatoren
CN111574909B (zh) * 2020-04-23 2021-11-02 华北电力大学（保定） 一种抗击穿型环氧树脂-氮化硼复合材料的制备方法
CN112827319B (zh) * 2020-12-23 2023-03-03 四川天采科技有限责任公司 一种含低浓度硅烷与碳二以上轻烃类的氯基SiC-CVD外延尾气全温程变压吸附提氢与循环再利用方法

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US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2468175A (en) * 1949-04-26 Apparatus for electrochemical
US2768074A (en) * 1949-09-24 1956-10-23 Nat Res Corp Method of producing metals by decomposition of halides
DE863997C (de) * 1951-03-02 1953-01-22 Degussa Abscheidung von Elementen mit metallaehnlichem Charakter aus ihren Verbindungen
BE525102A (de) * 1952-12-17 1900-01-01
NL218408A (de) * 1954-05-18 1900-01-01
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure

Also Published As

Publication number Publication date
CH355220A (de) 1961-06-30
NL105537C (de) 1963-08-15
CH362061A (de) 1962-05-31
FR1131422A (fr) 1957-02-21
DE976899C (de) 1964-07-23
GB812818A (en) 1959-04-29
FR1220648A (fr) 1960-05-25
US2999737A (en) 1961-09-12
GB795191A (en) 1958-05-21
US2992984A (en) 1961-07-18
FR1125277A (fr) 1956-10-29
DE1151782B (de) 1963-07-25
DE1017795B (de) 1957-10-17
GB890230A (en) 1962-02-28
DE1023889B (de) 1958-02-06
DE1042539B (de) 1958-11-06

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