CH391672A - Verfahren zum Herstellen von Halbleiterstäben - Google Patents
Verfahren zum Herstellen von HalbleiterstäbenInfo
- Publication number
- CH391672A CH391672A CH910661A CH910661A CH391672A CH 391672 A CH391672 A CH 391672A CH 910661 A CH910661 A CH 910661A CH 910661 A CH910661 A CH 910661A CH 391672 A CH391672 A CH 391672A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing semiconductor
- semiconductor rods
- rods
- manufacturing
- semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES70069A DE1139813B (de) | 1960-08-25 | 1960-08-25 | Verfahren zum Herstellen von hochreinen Silicium- oder Germaniumstaeben |
Publications (1)
Publication Number | Publication Date |
---|---|
CH391672A true CH391672A (de) | 1965-05-15 |
Family
ID=7501430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH910661A CH391672A (de) | 1960-08-25 | 1961-08-03 | Verfahren zum Herstellen von Halbleiterstäben |
Country Status (3)
Country | Link |
---|---|
CH (1) | CH391672A (de) |
DE (1) | DE1139813B (de) |
GB (1) | GB913427A (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2609564A1 (de) * | 1976-03-08 | 1977-09-15 | Siemens Ag | Verfahren zum abscheiden von elementarem silicium aus der gasphase |
DE102009035952A1 (de) * | 2009-08-03 | 2011-02-10 | Graeber Engineering Consultants Gmbh | Flansch für ein CVD-Reaktorgehäuse, Verwendung einer Kamera bei einem CVD-Verfahren sowie CVD-Verfahren zur Erzeugung von Siliziumstangen |
-
1960
- 1960-08-25 DE DES70069A patent/DE1139813B/de active Pending
-
1961
- 1961-08-03 CH CH910661A patent/CH391672A/de unknown
- 1961-08-25 GB GB30755/61A patent/GB913427A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB913427A (en) | 1962-12-19 |
DE1139813B (de) | 1962-11-22 |
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