GB1108741A - Improvements in and relating to epitaxial layers of semiconductor materials - Google Patents

Improvements in and relating to epitaxial layers of semiconductor materials

Info

Publication number
GB1108741A
GB1108741A GB36944/63A GB3694463A GB1108741A GB 1108741 A GB1108741 A GB 1108741A GB 36944/63 A GB36944/63 A GB 36944/63A GB 3694463 A GB3694463 A GB 3694463A GB 1108741 A GB1108741 A GB 1108741A
Authority
GB
United Kingdom
Prior art keywords
wafer
liquid phase
silicon
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36944/63A
Inventor
Ronald Charles Newman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB36944/63A priority Critical patent/GB1108741A/en
Priority to NL6410870A priority patent/NL6410870A/xx
Priority to DEA47111A priority patent/DE1263714B/en
Publication of GB1108741A publication Critical patent/GB1108741A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

<PICT:1108741/C6-C7/1> A method of producing an epitaxial layer of semi-conductor material on a semi-conductor substrate comprises bringing vaporized semi-conductor material into contact with a liquid phase region, produced by alloying the substrate material with a metal on a face of the substrate, so that semi-conductor material is deposited from the region. Si, Ge or Ge-Si alloy is deposited on one of these materials alloyed with Au, Ag, Cu, Al, or Sb. In a chamber 3 under a vacuum of e.g. 10-5mm Hg a cleaned Si wafer 1 is heated to 500-600 DEG C. by an electric heater 7 and gold from a boat 6 evaporated to form a 100<\>rA thick layer on the lower face 4 of the wafer, which at this temperature forms a liquid phase alloy. The wafer is raised to 1208 DEG C. and silicon 5 evaporated by electron beam heating by a gun 8 on to the liquid phase surface. The Si is incorporated into the region and is deposited therefrom on to the substrate. The wafer is cooled and the liquid phase region crystallizes and may be removed by lapping or etching with a mixture of nitric and hydrofluoric acids. Alternatively the Si vapour may be thermally precipitated from SiCl2 under a reducing atmosphere. The epitaxial layer may be doped by evaporating an impurity simultaneously with the coating material.ALSO:<PICT:1108741/C1/1> A method of producing an epitaxial layer of silicon on a silicon substrate comprises bringing vaporized silicon or compound thereof into contact with a liquid phase region produced by alloying the silicon substrate with a metal on a face of the substrate, so that silicon is deposited from the region. The Si, may be alloyed with Au, Ag, Cu, Al, or Sb. In a chamber 3 under a vacuum of e.g. 10-5 mm. Hg a cleaned Si wafer 1 is heated to 500-600 DEG C. by an electric heater 7 and gold from boat 6 evaporated to form a 100<\>rA thick layer on the lower face 4 of the wafer, which at this temperature forms a liquid phase alloy. The wafer is raised to 1208 DEG C. and silicon 5 evaporated by electron beam heating by a gun 8 on to the liquid phase surface. The Si is incorporated into the region and is deposited therefrom on to the substrate. The wafer is cooled and the liquid phase region crystallizes and may be removed by lapping or etching with a mixture of nitric and hydrofluoric acids. Alternatively the Si vapour may be thermally precipitated from SiCl2 under a reducing atmosphere. The epitaxial layer may be doped by evaporating an impurity simultaneously with the coating material.
GB36944/63A 1963-09-19 1963-09-19 Improvements in and relating to epitaxial layers of semiconductor materials Expired GB1108741A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB36944/63A GB1108741A (en) 1963-09-19 1963-09-19 Improvements in and relating to epitaxial layers of semiconductor materials
NL6410870A NL6410870A (en) 1963-09-19 1964-09-17
DEA47111A DE1263714B (en) 1963-09-19 1964-09-19 Method for epitaxially growing a layer of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB36944/63A GB1108741A (en) 1963-09-19 1963-09-19 Improvements in and relating to epitaxial layers of semiconductor materials

Publications (1)

Publication Number Publication Date
GB1108741A true GB1108741A (en) 1968-04-03

Family

ID=10392467

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36944/63A Expired GB1108741A (en) 1963-09-19 1963-09-19 Improvements in and relating to epitaxial layers of semiconductor materials

Country Status (3)

Country Link
DE (1) DE1263714B (en)
GB (1) GB1108741A (en)
NL (1) NL6410870A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3216387C2 (en) * 1982-05-03 1985-09-19 Vereinigte Glaswerke Gmbh, 5100 Aachen Method and device for producing a highly doped semiconductor layer on a temperature-resistant solid base body

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL98697C (en) * 1952-08-20
DE1042553B (en) * 1953-09-25 1958-11-06 Int Standard Electric Corp Process for the production of high purity silicon
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances
DE1141255B (en) * 1958-03-05 1962-12-20 Siemens Ag Process for producing highly purified single-crystalline semiconductor rods
DE1114170B (en) * 1957-07-03 1961-09-28 Int Standard Electric Corp Method and device for the production of extremely pure semiconductor material

Also Published As

Publication number Publication date
DE1263714B (en) 1968-03-21
NL6410870A (en) 1965-03-22

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