NL6410870A - - Google Patents

Info

Publication number
NL6410870A
NL6410870A NL6410870A NL6410870A NL6410870A NL 6410870 A NL6410870 A NL 6410870A NL 6410870 A NL6410870 A NL 6410870A NL 6410870 A NL6410870 A NL 6410870A NL 6410870 A NL6410870 A NL 6410870A
Authority
NL
Netherlands
Application number
NL6410870A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6410870A publication Critical patent/NL6410870A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
NL6410870A 1963-09-19 1964-09-17 NL6410870A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB36944/63A GB1108741A (en) 1963-09-19 1963-09-19 Improvements in and relating to epitaxial layers of semiconductor materials

Publications (1)

Publication Number Publication Date
NL6410870A true NL6410870A (xx) 1965-03-22

Family

ID=10392467

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6410870A NL6410870A (xx) 1963-09-19 1964-09-17

Country Status (3)

Country Link
DE (1) DE1263714B (xx)
GB (1) GB1108741A (xx)
NL (1) NL6410870A (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3216387C2 (de) * 1982-05-03 1985-09-19 Vereinigte Glaswerke Gmbh, 5100 Aachen Verfahren und Vorrichtung zur Herstellung einer hochdotierten Halbleiterschicht auf einem temperaturbeständigen Feststoff-Grundkörper

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180750B (nl) * 1952-08-20 Bristol Myers Co Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten.
DE1042553B (de) * 1953-09-25 1958-11-06 Int Standard Electric Corp Verfahren zur Herstellung von Silicium grosser Reinheit
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
DE1141255B (de) * 1958-03-05 1962-12-20 Siemens Ag Verfahren zum Herstellen hochgereinigter einkristalliner Halbleiterstaebe
DE1114170B (de) * 1957-07-03 1961-09-28 Int Standard Electric Corp Verfahren und Vorrichtung zur Herstellung von extrem reinem Halbleitermaterial

Also Published As

Publication number Publication date
GB1108741A (en) 1968-04-03
DE1263714B (de) 1968-03-21

Similar Documents

Publication Publication Date Title
AR142945A1 (xx)
BE627012A (xx)
BE644218A (xx)
BE634128A (xx)
BE31062A (xx)
BE462764A (xx)
BE465565A (xx)
BE507458A (xx)
BE533484A (xx)
BE547422A (xx)
BE571209A (xx)
BE582314A (xx)
BE603935A (xx)
BE644657A (xx)
BE612803A (xx)
BE614220A (xx)
BE616247A (xx)
BE616830A (xx)
BE616967A (xx)
BE619061A (xx)
BE620325A (xx)
BE621232A (xx)
BE621517A (xx)
BE622160A (xx)
BE623117A (xx)