CA2312223A1 - Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same - Google Patents
Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same Download PDFInfo
- Publication number
- CA2312223A1 CA2312223A1 CA002312223A CA2312223A CA2312223A1 CA 2312223 A1 CA2312223 A1 CA 2312223A1 CA 002312223 A CA002312223 A CA 002312223A CA 2312223 A CA2312223 A CA 2312223A CA 2312223 A1 CA2312223 A1 CA 2312223A1
- Authority
- CA
- Canada
- Prior art keywords
- laser
- optical system
- forming means
- intensity distribution
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 70
- 238000010438 heat treatment Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000009826 distribution Methods 0.000 claims abstract description 125
- 239000010409 thin film Substances 0.000 claims abstract description 87
- 239000010408 film Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000012141 concentrate Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 10
- 230000007547 defect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17923399A JP3562389B2 (ja) | 1999-06-25 | 1999-06-25 | レーザ熱処理装置 |
| JPP11-179233 | 1999-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2312223A1 true CA2312223A1 (en) | 2000-12-25 |
Family
ID=16062280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002312223A Abandoned CA2312223A1 (en) | 1999-06-25 | 2000-06-23 | Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6437284B1 (de) |
| EP (1) | EP1063049B1 (de) |
| JP (1) | JP3562389B2 (de) |
| KR (1) | KR100371986B1 (de) |
| CN (1) | CN1146027C (de) |
| CA (1) | CA2312223A1 (de) |
| DE (1) | DE60027820T2 (de) |
| TW (1) | TW469539B (de) |
Families Citing this family (91)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
| DE19931751A1 (de) * | 1999-07-08 | 2001-01-11 | Zeiss Carl Fa | Vorrichtung zur Reduzierung der Peakleistung einer Pulslaser-Lichtquelle |
| US6635588B1 (en) * | 2000-06-12 | 2003-10-21 | Ultratech Stepper, Inc. | Method for laser thermal processing using thermally induced reflectivity switch |
| US6884699B1 (en) | 2000-10-06 | 2005-04-26 | Mitsubishi Denki Kabushiki Kaisha | Process and unit for production of polycrystalline silicon film |
| JP2002141301A (ja) | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用光学系とこれを用いたレーザアニーリング装置 |
| US6752501B2 (en) | 2001-04-23 | 2004-06-22 | Dee E. Willden | Lensless laser focusing device |
| US6897477B2 (en) | 2001-06-01 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
| KR100885904B1 (ko) * | 2001-08-10 | 2009-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레이저 어닐링장치 및 반도체장치의 제작방법 |
| JP3977038B2 (ja) * | 2001-08-27 | 2007-09-19 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
| JP3980465B2 (ja) * | 2001-11-09 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| TWI267145B (en) | 2001-11-30 | 2006-11-21 | Semiconductor Energy Lab | Manufacturing method for a semiconductor device |
| US7214573B2 (en) * | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
| US7113527B2 (en) | 2001-12-21 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for laser irradiation and manufacturing method of semiconductor device |
| KR101131040B1 (ko) | 2002-08-19 | 2012-03-30 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 에지 영역을 최소화하도록 기판 상의 박막 영역을 레이저결정화 처리하는 방법 및 시스템, 그리고 그러한 박막 영역의 구조 |
| KR20050047103A (ko) | 2002-08-19 | 2005-05-19 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 다양한 조사 패턴을 포함하는 원 샷 반도체 가공 시스템 및방법 |
| JP4278940B2 (ja) | 2002-09-09 | 2009-06-17 | 株式会社 液晶先端技術開発センター | 結晶化装置および結晶化方法 |
| TWI332682B (en) | 2002-09-19 | 2010-11-01 | Semiconductor Energy Lab | Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device |
| JP2004134785A (ja) * | 2002-09-19 | 2004-04-30 | Semiconductor Energy Lab Co Ltd | ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 |
| US7097709B2 (en) * | 2002-11-27 | 2006-08-29 | Mitsubishi Denki Kabushiki Kaisha | Laser annealing apparatus |
| TWI300950B (en) * | 2002-11-29 | 2008-09-11 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same |
| JP2004260144A (ja) * | 2003-02-06 | 2004-09-16 | Mitsubishi Electric Corp | レーザアニーリング方法および装置 |
| KR101191837B1 (ko) | 2003-02-19 | 2012-10-18 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치 |
| JP4494045B2 (ja) * | 2003-03-11 | 2010-06-30 | 株式会社半導体エネルギー研究所 | ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法 |
| US7327916B2 (en) | 2003-03-11 | 2008-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device |
| JP4619035B2 (ja) * | 2003-04-24 | 2011-01-26 | 株式会社半導体エネルギー研究所 | ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法 |
| SG137674A1 (en) | 2003-04-24 | 2007-12-28 | Semiconductor Energy Lab | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| JP4660074B2 (ja) * | 2003-05-26 | 2011-03-30 | 富士フイルム株式会社 | レーザアニール装置 |
| US7245802B2 (en) * | 2003-08-04 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device |
| WO2005029546A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
| WO2005029551A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| US7318866B2 (en) * | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
| TWI351713B (en) | 2003-09-16 | 2011-11-01 | Univ Columbia | Method and system for providing a single-scan, con |
| US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
| US7311778B2 (en) | 2003-09-19 | 2007-12-25 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
| JP2005129916A (ja) * | 2003-09-30 | 2005-05-19 | Semiconductor Energy Lab Co Ltd | ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 |
| US7169630B2 (en) | 2003-09-30 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| JP3960295B2 (ja) * | 2003-10-31 | 2007-08-15 | 住友電気工業株式会社 | チルト誤差低減非球面ホモジナイザー |
| US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
| US7091124B2 (en) | 2003-11-13 | 2006-08-15 | Micron Technology, Inc. | Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices |
| JP4416481B2 (ja) * | 2003-11-18 | 2010-02-17 | ギガフォトン株式会社 | 光学的パルス伸長器および露光用放電励起ガスレーザ装置 |
| JP4838982B2 (ja) * | 2004-01-30 | 2011-12-14 | 株式会社 日立ディスプレイズ | レーザアニール方法およびレーザアニール装置 |
| TWI272149B (en) | 2004-02-26 | 2007-02-01 | Ultratech Inc | Laser scanning apparatus and methods for thermal processing |
| KR100514996B1 (ko) * | 2004-04-19 | 2005-09-15 | 주식회사 이오테크닉스 | 레이저 가공 장치 |
| US20050237895A1 (en) | 2004-04-23 | 2005-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method for manufacturing semiconductor device |
| US20050247894A1 (en) * | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
| US7232754B2 (en) | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
| SG120200A1 (en) | 2004-08-27 | 2006-03-28 | Micron Technology Inc | Slanted vias for electrical circuits on circuit boards and other substrates |
| US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
| US7387954B2 (en) * | 2004-10-04 | 2008-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| US7664365B2 (en) * | 2004-10-27 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same |
| US7645337B2 (en) | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
| US8093530B2 (en) * | 2004-11-19 | 2012-01-10 | Canon Kabushiki Kaisha | Laser cutting apparatus and laser cutting method |
| US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
| JP2006295068A (ja) * | 2005-04-14 | 2006-10-26 | Sony Corp | 照射装置 |
| DE502005005756D1 (de) * | 2005-05-12 | 2008-12-04 | Innovavent Gmbh | Verwendung eines Scheibenlasers zur Kristallisation von Siliziumschichten |
| US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
| JP5519150B2 (ja) * | 2005-08-16 | 2014-06-11 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 高周波レーザを用いた薄膜の均一な逐次的横方向結晶化のためのシステム及び方法 |
| US7863187B2 (en) | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
| US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
| US7622377B2 (en) * | 2005-09-01 | 2009-11-24 | Micron Technology, Inc. | Microfeature workpiece substrates having through-substrate vias, and associated methods of formation |
| CN101617069B (zh) | 2005-12-05 | 2012-05-23 | 纽约市哥伦比亚大学理事会 | 处理膜的系统和方法以及薄膜 |
| US7749899B2 (en) | 2006-06-01 | 2010-07-06 | Micron Technology, Inc. | Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces |
| US8803027B2 (en) | 2006-06-05 | 2014-08-12 | Cymer, Llc | Device and method to create a low divergence, high power laser beam for material processing applications |
| US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
| US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
| JP2008068270A (ja) * | 2006-09-12 | 2008-03-27 | Disco Abrasive Syst Ltd | レーザー加工装置 |
| KR100878159B1 (ko) * | 2007-04-19 | 2009-01-13 | 주식회사 코윈디에스티 | 레이저 가공장치 |
| US7573930B2 (en) | 2007-06-14 | 2009-08-11 | Innovavent Gmbh | Anamorphotic solid-sate laser |
| US20090046757A1 (en) * | 2007-08-16 | 2009-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device |
| SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
| TW200942935A (en) | 2007-09-21 | 2009-10-16 | Univ Columbia | Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same |
| WO2009042784A1 (en) | 2007-09-25 | 2009-04-02 | The Trustees Of Columbia University In The City Of New York | Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films |
| DE102007052782B4 (de) * | 2007-11-02 | 2017-02-16 | Saint-Gobain Glass France S.A. | Verfahren zur Veränderung der Eigenschaften einer TCO-Schicht |
| WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
| US8012861B2 (en) | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
| CN101919058B (zh) | 2007-11-21 | 2014-01-01 | 纽约市哥伦比亚大学理事会 | 用于制备外延纹理厚膜的系统和方法 |
| US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
| WO2009111340A2 (en) | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
| KR100908325B1 (ko) * | 2008-07-11 | 2009-07-17 | 주식회사 코윈디에스티 | 레이저 가공방법 |
| JP2012508985A (ja) | 2008-11-14 | 2012-04-12 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 薄膜の結晶化のためのシステムおよび方法 |
| KR20120004456A (ko) * | 2009-03-20 | 2012-01-12 | 코닝 인코포레이티드 | 정밀 레이저 스코어링 |
| KR20100107253A (ko) * | 2009-03-25 | 2010-10-05 | 삼성모바일디스플레이주식회사 | 기판 절단 장치 및 이를 이용한 기판 절단 방법 |
| US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
| US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
| US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
| WO2012120563A1 (ja) * | 2011-03-08 | 2012-09-13 | パナソニック株式会社 | 薄膜トランジスタアレイ装置、有機ｅｌ表示装置、及び、薄膜トランジスタアレイ装置の製造方法 |
| CN107579022B (zh) * | 2012-04-18 | 2021-03-16 | 应用材料公司 | 先进退火工艺中减少颗粒的设备和方法 |
| FR3063395B1 (fr) * | 2017-02-28 | 2021-05-28 | Centre Nat Rech Scient | Source laser pour l'emission d'un groupe d'impulsions |
| CN109520898A (zh) * | 2019-01-22 | 2019-03-26 | 河北工业大学 | 一种柱透镜变换的激光粒度测试方法 |
| US11560987B2 (en) * | 2019-11-20 | 2023-01-24 | Nichia Corporation | Light source device |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583478B2 (ja) * | 1978-03-03 | 1983-01-21 | 株式会社日立製作所 | レ−ザ加熱方法および装置 |
| US4327972A (en) * | 1979-10-22 | 1982-05-04 | Coulter Electronics, Inc. | Redirecting surface for desired intensity profile |
| JPS58127318A (ja) * | 1982-01-25 | 1983-07-29 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁層上への単結晶膜形成方法 |
| JPS6161657A (ja) | 1984-09-03 | 1986-03-29 | Matsushita Electric Ind Co Ltd | イオン風式空気清浄機 |
| US4744615A (en) * | 1986-01-29 | 1988-05-17 | International Business Machines Corporation | Laser beam homogenizer |
| US4793694A (en) * | 1986-04-23 | 1988-12-27 | Quantronix Corporation | Method and apparatus for laser beam homogenization |
| JPS63314862A (ja) * | 1987-06-17 | 1988-12-22 | Nec Corp | 薄膜トランジスタの製造方法 |
| DE3829728A1 (de) * | 1987-09-02 | 1989-03-23 | Lambda Physik Forschung | Verfahren und vorrichtung zum homogenisieren der intensitaetsverteilung im querschnit eines laserstrahls |
| DE3818504A1 (de) * | 1988-05-31 | 1991-01-03 | Fraunhofer Ges Forschung | Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial |
| JPH02175090A (ja) * | 1988-12-27 | 1990-07-06 | Isamu Miyamoto | レーザビーム成形装置 |
| JPH0433791A (ja) * | 1990-05-29 | 1992-02-05 | Matsushita Electric Ind Co Ltd | レーザ加工装置 |
| JP3149450B2 (ja) * | 1991-04-04 | 2001-03-26 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法及び製造装置 |
| JPH06124913A (ja) * | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
| WO1995026517A1 (en) * | 1992-11-10 | 1995-10-05 | United States Department Of Energy | Laser beam pulse formatting method |
| KR100299292B1 (ko) * | 1993-11-02 | 2001-12-01 | 이데이 노부유끼 | 다결정실리콘박막형성방법및그표면처리장치 |
| US5733641A (en) * | 1996-05-31 | 1998-03-31 | Xerox Corporation | Buffered substrate for semiconductor devices |
| JPH10244392A (ja) * | 1997-03-04 | 1998-09-14 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
| JP3402124B2 (ja) | 1997-06-04 | 2003-04-28 | 住友重機械工業株式会社 | ビームホモジナイザ及び半導体薄膜作製方法 |
| JP3484481B2 (ja) | 1997-06-19 | 2004-01-06 | 住友重機械工業株式会社 | ビームホモジナイザ及びそれを用いた半導体薄膜の製造方法 |
-
1999
- 1999-06-25 JP JP17923399A patent/JP3562389B2/ja not_active Expired - Lifetime
-
2000
- 2000-06-23 CA CA002312223A patent/CA2312223A1/en not_active Abandoned
- 2000-06-23 CN CNB001187449A patent/CN1146027C/zh not_active Expired - Lifetime
- 2000-06-23 US US09/599,645 patent/US6437284B1/en not_active Expired - Lifetime
- 2000-06-23 EP EP00113378A patent/EP1063049B1/de not_active Expired - Lifetime
- 2000-06-23 TW TW089112338A patent/TW469539B/zh not_active IP Right Cessation
- 2000-06-23 DE DE60027820T patent/DE60027820T2/de not_active Expired - Lifetime
- 2000-06-24 KR KR10-2000-0035042A patent/KR100371986B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP3562389B2 (ja) | 2004-09-08 |
| TW469539B (en) | 2001-12-21 |
| JP2001007045A (ja) | 2001-01-12 |
| CN1287381A (zh) | 2001-03-14 |
| CN1146027C (zh) | 2004-04-14 |
| KR100371986B1 (ko) | 2003-02-14 |
| EP1063049B1 (de) | 2006-05-10 |
| EP1063049A3 (de) | 2003-03-26 |
| DE60027820T2 (de) | 2007-04-26 |
| KR20010021028A (ko) | 2001-03-15 |
| EP1063049A2 (de) | 2000-12-27 |
| US6437284B1 (en) | 2002-08-20 |
| DE60027820D1 (de) | 2006-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6437284B1 (en) | Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same | |
| US6717105B1 (en) | Laser annealing optical system and laser annealing apparatus using the same | |
| JP4567984B2 (ja) | 平面表示装置の製造装置 | |
| US7381632B2 (en) | Semiconductor thin film crystallization device and semiconductor thin film crystallization method | |
| JP3860444B2 (ja) | シリコン結晶化方法とレーザアニール装置 | |
| JP2001127004A (ja) | レーザ照射装置 | |
| TW200527544A (en) | Laser annealing apparatus and annealing method of semiconductor thin film | |
| JP2002141302A (ja) | レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置 | |
| US7097709B2 (en) | Laser annealing apparatus | |
| JP2002139697A (ja) | 複数レーザビームを用いたレーザ光学系とレーザアニーリング装置 | |
| WO2012029488A1 (ja) | レーザアニール装置およびレーザアニール方法 | |
| TW201145401A (en) | Fabricating method of crystalline semiconductor and laser annealing apparatus | |
| JP4410926B2 (ja) | レーザアニーリング方法 | |
| JP4190901B2 (ja) | レーザ照射装置および半導体装置の作製方法 | |
| JPH0531354A (ja) | レーザ照射装置 | |
| JP5201614B2 (ja) | レーザ光の照射方法及びその装置 | |
| JP5030130B2 (ja) | 薄膜材料の結晶化装置 | |
| KR100814821B1 (ko) | 실리콘 박막의 결정화 장치 및 방법 | |
| JP2006134986A (ja) | レーザ処理装置 | |
| JPH03289128A (ja) | 半導体薄膜結晶層の製造方法 | |
| JP2009032814A (ja) | レーザ光照射装置および結晶成長方法 | |
| JP2004260144A (ja) | レーザアニーリング方法および装置 | |
| JP2007036080A (ja) | レーザアニール装置 | |
| JPH10125614A (ja) | レーザ照射装置 | |
| JPS5952831A (ja) | 光線アニ−ル方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued | ||
| FZDE | Discontinued |
Effective date: 20041216 |
|
| FZDE | Discontinued |
Effective date: 20041216 |