TWI272149B - Laser scanning apparatus and methods for thermal processing - Google Patents

Abstract

Apparatus and methods for thermally processing a substrate with scanned laser radiation are disclosed. The apparatus includes a continuous radiation source and an optical system that forms an image on a substrate. The image is scanned relative to the substrate surface so that each point in the process region receives a pulse of radiation sufficient to thermally process the region.

Description

1272149 IX. Description of the invention: [Technology and financial reduction of the invention] This application is a continuation of the application in the joint review application (No. 10/287,864) on November 6, 2002. 5 Field of the Invention The present invention relates to a laser scanning apparatus and method for substrate heat treatment, and particularly to a semiconductor substrate on which an integrated element or circuit is formed. BACKGROUND OF THE INVENTION 1. Manufacturing integrated circuits (ICs) includes passing a semiconductor substrate through, for example, a photoresist wafer, microscopic exposure, photoresist development, engraving, polishing and heating or "heat treatment," Several processes. In some applications, heat treatment is used to activate dopants in substrate doped regions (such as source and drain regions). Heat treatment involves different heating (or cooling) techniques, such as rapid thermal annealing (RTA) and Laser Heat Treatment (LTp). When 15 uses a laser for heat treatment, this technique is sometimes referred to as "shooting," or "laser retreat" temperature. Different techniques and systems for laser processing of semiconductor substrates It is well known and used in (4) circuit (IC) fabrication n-beam processing is preferably accomplished in a single cycle, annealing the temperature of the material to the annealing temperature and then back to the onset (eg, if the ring is required for the activation or annealing, etc.). Use one

Or the following 'substantial improvement 1 (^ performance. Less than - between) has been available with a pulsed laser evenly 仏 # _ , 5 1272149 in Us Patent Νο· Μ%, · B1, titled "L_ 几咖I Pn >cessing ApparatusandMeih〇d,, Illustrated. However, in the case of shorter light shots, the area that can be heat treated is narrower, and the circuit component itself is more likely to cause its own temperature difference. For example, - exists in thick field oxidation The cerevisiae conductor on the layer insulator 5 is heated more rapidly than the shallow layer bonding on the surface of the stone wafer. The longer radiation pulse can obtain a more uniform temperature distribution due to the force", depth rut Deep 'and a longer pulse interval for lateral heat transfer to average the temperature of the entire circuit. However, it is impractical to extend the length of the laser pulse such that a period of more than one microsecond and more than 5 cm2 or more is impractical because The energy of each pulse becomes too high, and the high energy required by the laser and its power supply becomes too large and expensive. Another method using pulsed radiation uses continuous radiation. One uses a laser diode body An embodiment of a continuous heat source heat treatment apparatus is disclosed in US Patent Application No. 09/536,869, entitled "Apparatus Having Line Source of Radiant Energy f〇r Exposing a Substrate,, wherein the book is in March 27, 2〇〇〇Application and transfer to the same assignee as this application. A laser diode array can achieve an output power in the range of 100 W/cm and can form a line image of micron width. 20 Converting power to radiation It is also very efficient. In addition, because there are many diodes operating at a few different wavelengths in the rod, it can form a uniform line image. However, the use of a diode as a continuous source of radiation is only suitable for certain applications. For example, when the annealing depth is less than one micron of the source and gate regions, the light stroke of 6 1272149 is preferably not absorbed by the stone beyond this depth. Unfortunately, a 'length is 0.81⁄4 meters. A typical laser diode has a absorption depth of 2H at room temperature. Therefore, it is applied to the uppermost layer of the substrate (eg, narrower than -micro 2) = heat treatment, and the dipole radical of the A part is more than Place Or the degree of desire. This is the total power required by the Japanese power. Although it can be a very complicated complexity, the 'increase' adds more to the process of the original [invention] the summary of the invention l〇15 2〇 the present invention The view is the poetic heat _ substrate-area loading = the device includes - can provide a first beam intensity curve and has a suitable heat source of the substrate region wavelength _4 connected to the source. The rear section of the radiation source is configured - optical "to accept the radiant light and to shape the Mt light," which is shaped on the substrate. In the - specific column, the image is a line image. The h includes - suitable for the base of the building, and vice versa. At least the optical purity and the towel are adapted to scan the (4) image of the county plate in the T晦 direction, and (4) to heat the region to a temperature sufficient to treat the region. Another aspect of the present invention is a method of heat treating a region of a substrate. The method comprises: generating a continuous private light having a wavelength of the substrate region, and scanning the region in the _ direction (four) Han~ cover, and (4) receiving a heat at the respective points in the region to process the substrate region. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1B is a schematic view showing an embodiment of forming an ideal line image having a long dimension L1 and a short dimension L2 on a substrate by the apparatus of FIG. 1A; FIG. 1C A two-dimensional map represents the intensity distribution accompanying the actual line image. 5 1D is a simplified diagram of a specific example of an optical system of the first drawing device, which includes a conical mirror to form a line image on the substrate; FIG. 2A is a schematic diagram illustrating the implementation of the laser scanning device in FIG. 1A a specific example, which further includes a light converter disposed between the radiation source and the optical system; • FIG. 2B is a schematic diagram illustrating how the optical converter in FIG. 2A changes the beam intensity curve of the variable radiation; 2C is a cross-sectional view of a specific example of a converter/optical system including a flat Gaussian beam intensity curve converter; FIG. 2D is a non-circumferential I. ~ edge dark formed by the converter/optical system of FIG. 2C An example of an exemplary beam intensity curve for angularly uniform radiation; 15 Figure 2E is a similar 2D image with the edge beam removed from the surrounding dim aperture to reduce the intensity peak at the endpoint of the image; ® Figure 3 is a similar BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of an apparatus, the additional elements of which are representative of different embodiments of the present invention; and FIG. 4 illustrates a specific example of the implementation of the reflected-radiation optical monitor of FIG. 3, wherein the incident angle Φ is equal to or close to 0°; Figure 3 is used to measure the scan shadow on the substrate. Temperatures near 100 position or analysis system embodiment 300 showing a specific example of an enlarged detail. Figure 6 is a plot of intensity versus temperature for a black body temperature at 1410 °C (Fig.) at a temperature slightly higher than the temperature of the dopant used to activate the source and drain 8 1272149 regions of a semiconductor transistor; Figure 7 is a graph showing the illusion of the grating pattern relative to the grating pattern features.

The direction plane has a detailed enlarged isometric view of the substrate with incident and reflected laser light having calibration characteristics; 5 Figure 8 10w 10·6 micron wavelength laser radiation reflected by the following surface p and s polarization direction reflectivity versus incident angle Figure (8) pure tantalum, (9) 0.5 micron oxidized insulating layer at the top of the crucible, (c) polycrystalline turbulent channel at the top of the 5·5 micron oxidized insulating layer 〇·1 micron, and (d) infinitely deep tantalum oxide layer Fig. 9 is a plan view showing a specific example of the apparatus of the present invention for processing a gate pattern semiconductor crystal circular 1 substrate formed thereon, illustrating that the substrate is operated in an optimum radiation structure; Fig. 10 is A plan view of a substrate illustrates a pattern of folding a scanned image on a surface of a substrate; FIG. 11 is a cross-sectional view showing an embodiment of an optical system, which includes 15 movable scanning mirrors; and FIG. 12 shows four substrates on a stage The ability to rotate and linearly move the image on the substrate. The plan of the spiral sweeping pattern is generated on the substrate. The drawings of the 13A and 13B are the plan view of the substrate.

The pattern 'where the knowledge path is separated by a space that allows the substrate to cool before the sweeping seedlings are adjacent to the sweeping seedling π 2 ;; I Figure 14 is the apparatus of the present invention in the spiral sweeping method, optical selection The method and the method of the method 4 are based on the simulation of the substrate/hour simulation versus the retention time of the micro-sum; Figure 15 is a similar example of the implementation of the LTP system of the first diagram. A schematic diagram further comprising a loop optical system configured to obtain reflected radiation and direct it back to the substrate as circulating radiation; FIG. 16 is a cross-sectional view of a specific embodiment of the loop optical system of FIG. 15 including a right angle Mirror and collecting/focusing lens; 5 Fig. 17 is a cross-sectional view showing a modification of the specific example of the circulating optical system of Fig. 16, wherein the right angle mirror is displaced (deviation) from the axis AR by an amount of AD, resulting in direct The incident and circulating radiant light has a deviation at the incident angle; Fig. 18 is a schematic cross-sectional view of a specific example of the implementation of the circulatory optical system of Fig. 15, which includes an enlarged successor group and a roof mirror; 10 Fig. 19 is a cycle in Fig. 15. Optical system A cross-sectional view of another embodiment of a specific embodiment including a collimating/focusing lens and a grating; and FIG. 20 is a schematic cross-sectional view showing an embodiment of an LTP system using two laser diode arrays and two opposite configurations The LTP optical system illuminates the substrate at a similar incident angle opposite the normal to the substrate. The various components described in the drawings are for the purpose of illustration and not representation. Some of its parts may be magnified, while others may be shrunk. The drawings are intended to illustrate various embodiments of the invention, which are understood and used by those skilled in the art. I: Implementation:! DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT The detailed description of the specific embodiments of the present invention is set forth below with reference to the accompanying drawings, These specific examples are sufficiently described in detail to enable those skilled in the art to practice the invention, and it is understood that other specific embodiments can be used and other changes can be made without departing from the scope of the invention. Therefore, the following detailed description is not to be considered as limiting, and the scope of the invention is defined by the scope of the appended claims. General Apparatus and Method FIG. 1A is a simplified view of a laser scanning apparatus according to a general embodiment of the present invention. The apparatus 10 of Fig. 1A includes a continuous radiation source 12 that radiates along an optical axis A1 and has an output power and beam intensity curve P1 continuous radiation 14A perpendicular to the optical axis. In an embodiment, the continuous radiation light Ma is collimated. Also in an embodiment, the source 12 is a laser and the radiant light 14 is a laser. Further in this embodiment, the source 12 is a carbon dioxide (c〇2) laser having an operating wavelength of between about 9.4 microns and about 10.8 microns. The c〇2^ radiation can convert electrical energy into radiation very efficiently, and its output light is typically very homogenous, so the curve P1 is a Gaussian curve. Further, as described below, the infrared wavelength generated by the 忒C〇2 field is suitable for processing (e.g., heating) 矽 (e.g., a wire plate such as Shi Xijing 81). Also in the embodiment, the radiant light 14A 15 is linearly polarized and steerable such that the radiation incident on the substrate comprises a single-P-polarization state P, or a single-S-polarized shape US, or both . Since the radiation source 12 emits a continuous radiant light 14A, referred to herein as a "continuous source of radiation, generally, the radiant light 14A includes radiation whose wavelength is absorbed by the substrate and is therefore suitable for heating the substrate. 20 Device 10 Included is an optical system 20 that converts (e.g., focuses or shapes) the radiant light 14A into radiant light 14B at a later stage of the radiation source 12. The optical system 20 may be comprised of unitary elements (e.g., a single lens element or mirror) or may be comprised of a plurality of elements. In an embodiment, the optical system 20 can also include a movable element, such as a scanning mirror, as will be described in more detail below. 11 1272149 The apparatus 10 further includes a clamp 4 具有 having an upper surface 42 at a rear portion of the optical system 20. The 40 series is supported by a stage 46 supported by a platen 50. In another embodiment, the chuck 40 is incorporated into the stage 46. In another embodiment, the stage 46 is movable. In an embodiment, the base 5 stage 46 is rotatable along one or more X, Y and Z axes. The upper surface 42 of the chuck supports a substrate 60 having a surface 62 of the surface normal N and a section 63. In an implementation specific example Substrate 60 includes a reference feature 64 to facilitate calibration of the substrate at device 1, as described below. In an embodiment, reference feature 64 is also used to define the crystal orientation of a single crystal substrate. In a specific example, the substrate 60 is a single crystal germanium wafer, such as the document #Semi M1 -600, "Specifications for" obtained by SEMl (Semiconductor Equipment and Materials International), 3081 Zanker Road, San Jose 95134. Polished Monocrystalline

In the description of Silicon Wafers, the document is also incorporated herein by reference. In addition, in an embodiment, substrate 60 includes source and drain regions 66A and 66B formed on or near surface 62 as A portion of a circuit (e.g., a transistor) 67 formed in the substrate. In an embodiment, the source and gate regions 66A and 66B are shallower having a depth of one micron or less into the substrate. The substrate normal N forms an angle φ which is the incident angle of the radiated light 14B (and the axis A1) and the substrate surface normal N is φ. In an embodiment, the radiant light 14 Β has an incident angle of φ > 0 to ensure The radiant light reflected by the substrate surface 62 does not return to the light source 12. Generally, the angle of incidence may vary in the range of φ φ < 90°. However, in some applications, 12 is selected within this range. 1272149 The angle of incidence to operate the device is beneficial, as described in more detail below. In a consistent embodiment, the device 1 further includes a connection to the radiation source 12 via a connecting line ("wire") 72, and via line 78. Connected to the controller 70 of the stage controller 76. The controller 76 is connected to the stage shame via line 8 to control the movement of the stage. In an embodiment, the controller 70 controls the radiation source 12, the stage controller 76 and the optical via signals 90, 92 and 94, respectively. The operation of system 2 (such as the movement of each component). In a consistent example, one or more lines 72, 78, 80 and 82 are wires and one or more signals 90, 92 and 94 are electronic Signal, however, in another embodiment, the one or more lines are optical fibers and the corresponding one or more signals are optical signals. In an embodiment, the controller 70 is an individual such as an individual. A computer or workstation computer can be obtained by any of a number of well-known computer companies such as Dell Computer, Inc., of Austin Texas. The controller 7 preferably includes 15 such as the 1ntel series, or an AMD K6 or K7 processor, etc. Any commercially available microprocessor, a bus that is suitable for connecting the processor to a memory component such as a hard disk component, and suitable input and output components (such as a keyboard and a display, respectively). Continue to refer to FIG. 1A, radiation 14B by the optical system 20 The A1 guide 20 leads to the substrate surface 62. In an embodiment, the optical system 20 focuses the radiant light 14B to form an image 1 基板 on the substrate surface 62. The term "image" is used herein generally to mean The distribution of the light formed by the radiant light 14β on the substrate surface 62. Therefore, the image 1 〇〇 does not need to have an object accompanying the general concept. Further, the image 100 does not need to be irradiated by a beam line to a point of coke formation 13 1272149. For example, as the circular spot formed by normal incident light is focused by a circularly symmetric optical system, image 100 may form an elliptical spot from deformed optical system 20. Similarly, the term "image" includes the distribution of light formed by the substrate 60 intercepting light 14B on the substrate surface 62. 5 The image 1 can have any number of shapes, such as squares, rectangles, ovals, etc. Similarly, The image 100 can have a variety of different intensity distributions, including the distribution of the associated uniform line image. Figure 1B illustrates the image 100 as a line image in an embodiment. An idealized line image 100 has a long dimension (length) L1. , a short dimension (width) L2, and a uniform (ie, flat) 1〇 intensity. In fact, the line image 100 is not completely uniform due to the diffraction effect. FIG. 1C is a two-dimensional diagram showing the intensity distribution of the actual line image. In most applications, the integral cross section of the short dimension L2 only needs to be completely uniform in the long dimension L1. The uniformity of the integrated intensity distribution is about ± 2% of the image operable part. Continue to refer to the 1B and 1C diagrams. In an embodiment, the length L1 ranges from about 1.25 cm to 4.4 cm and the width is about 50 μm. In another embodiment, the length L1 is 1 cm or less. The image 100 has an intensity range of 50 kW/cm 2 to 150 kW/cm 2 . The intensity of the image 100 is based on the energy required to be supplied to the substrate in practical applications, the 20 image width L2, and the image scanning substrate surface 62 The 1D is a simplified diagram of an optical system 20 including conical mirrors M1, M2 and M3 to form a line image on the surface of the substrate. The optical system 20 of Fig. 1D illustrates how a reflective cone segment is used for focusing. A collimated light is formed into a line image 100. In an embodiment, the optical system 2 includes a parabolic cylindrical lens 14 1272149 segments M1 and M2 and a conical mirror segment M3. The conical mirror segment m3 has the entire conical mirror (shown in dashed lines) Corresponding axis A3. Axis A3 is parallel to collimated light 14A and in the direction along substrate surface 62. Line image 100 is formed on substrate surface 62 along axis A3. The benefit of this arrangement of optical system 20 5 is that A diffraction limit image 10 最小 having a minimum variation at the incident angle φ is generated. The length L1 of the line image is mainly determined according to the incident angle φ and the collimated light measured in the y direction. Different incident angles ρ can be converted. Do not The conical mirror segment (such as mirror M3) enters the radiant light 14A and is reached in the path. The length L1 of the image 100 can be adjusted by collimating light such as adjustable (such as zoom) through 10 mirrors 1 〇 4 With reference to FIG. 1D, in an embodiment, the collimated light 14A can be sized by a parabolic cylindrical mirror Mi and ]y[2. The collimated light 14A is firstly taken by the forward cylindrical parabolic mirror M1. The line is focused at the point of the point. When the focus point F is reached, the focused light 14A is intercepted by the negative parabolic cylindrical mirror M2 to collimate the focused light. The two cylindrical parabolic mirrors Ml and M2 only changes the intensity of the collimated light in the Υ direction. Therefore, the parabolic mirrors M1 and M2 also change the length of the line image 100 on the substrate surface 62. , but does not change the width L2 of the line image along the vertical plane. Also shown in Fig. 1D are alternating parabolic mirrors M1, and M2, and a 20 alternating conical mirrors, all of which can be used, such as the marking wheel 1〇6, deleted and ιι〇, brought to the optical path in advance. The fixed position of the decision. In the specific embodiment, the substrate surface 62 is under the image 100, and one of several scanning patterns described in detail below can be used to scan the field, and the method can be used to achieve the seedlings, including Move the substrate stage 46 or light 15 1272149 to illuminate 14B. Thus, the term "scanning," as used herein, includes the movement of the image relative to the surface of the substrate, regardless of how it is achieved. By scanning a continuous radiant light on substrate surface 62, such as selecting an area thereon. The regions of 66A and _, or one or more circuits such as a transistor-like 5, receive a pulse of radiation at each illuminated point on the substrate. In an embodiment, a residence time of 2 〇〇 microseconds is used (ie The image stays at one point on the day.) The energy of the spotted seedlings on the 5 hai substrate is 5 J/cm2 to 50 J/cm2 in a single broom. The overlap scan increases the total. The energy absorbed. Thus, device 10 can provide a continuous source of radiation to a pulsed source of radiation, and is more suitable for providing a controllable portion of one or more regions, such as circuits or circuit elements formed therein or thereon. Pulse or burst radiation to various points on the substrate. The term used herein is used to treat other terms such as selective melting, explosion recrystallization, and doping activation. In addition, the term "processing," is used herein. Not included Laser 15 ore steam, cleaning of the substrate, or laser light the photoresist as lithography exposure and subsequent activation of the chemical. Conversely, by way of example, image 100 scans substrate 6 to provide sufficient heat to increase the surface temperature of one or more regions to process the one or more regions, such as in the source and drain regions. 66A and 66B activate doping or alter the crystal structure of the one or more regions. In a heat treatment embodiment 20, the apparatus 10 is used for rapid heating and cooling, and thereby activating shallow source and drain regions, such as having a depth of one micron or less from the surface 62 into the substrate. The source and drain regions 66A and 66B of the crystal 67. Apparatus 10 has a number of different specific examples and will be illustrated by the embodiments discussed below. 16 1272149 Specific Example of Optical Converter In a specific example of the embodiment which is not shown in Fig. 1A, the beam intensity curve P1 of the light-emitting light MA is uneven. This situation may occur when the laser is difficult and completely synchronized, and the energy distribution in the fresh direct field is = s-distribution, which causes the knife to be clothed in the same way as when the film is directly on the substrate. In a second application, the father hopes to make the light-emitting aperture and MB more evenly distributed and change their size, so that the image (10) has an intensity distribution and size suitable for the substrate for heat treatment.

10 15

Fig. 2 is a schematic diagram showing an embodiment of the laser broom device 10 of Fig. 1 further including a photoconverter 15A disposed along the axis 1 between the optical system and the continuous radiation source. The optical converter 15 turns the (four) light 14 具有 having the beam intensity curve Ρ 1 into the light beam 14 具有 having the beam intensity curve ρ2. In an embodiment, the optical converter 15 and the optical system % are combined to form a single converter/optical system 16A. Although the light converter 15'' is shown arranged in front of the optical system 20, it may be arranged in the latter stage. The second diagram is a diagram illustrating how the light converter 15 Α converts the radiant light 14 具有 having the beam intensity curve Ρ 1 into the radiant light 14 具有 having the beam intensity curve ρ 2 . The light-emitting light 14 Α and 14 Α ' are shown by a beam 17 , whose beam distance is related to the relative intensity distribution in the radiant light. The light converter 15 〇 adjusts the relative distance (i.e., density) of the beam 70 to change the beam intensity of the radiant light 14 . The curve Ρ1 forms the radiant light 14 具有 having the beam intensity curve Ρ2. In an embodiment, the light converter 150 is a refractive, reflective or catadioptric lens system. 2C is a conversion benefit/optical system 160 having a converter 150 converting the radiant light 14 具有 having a Gaussian beam intensity curve Ρ1 into a flat (ie uniform) beam intensity curve 17 1272149 P2, and forming a focus A cross-sectional view of the optical system 2A of the radiant light 14B and the line image 100. The converter/focusing system 160 of Fig. 2C includes round pupil lenses L1 to L5. Here, "lens" may refer to individual lens elements or a group of transflective elements, ie, a lens group. The first two cylindrical lenses L1 and L2 are used to contract the diameter of the radiant light l4A, and the cylindrical lenses L3 and L4 are used. Increasing the radiant light to about the original size, but because of the spherical aberration in the lens, the radiant beam intensity curve A14 with k is changed. The fifth cylindrical lens l5 is used as the optical system 2 被 and is rotated 90 with respect to the other lenses. Therefore, its effectiveness is outside the plane of the figure. Lens L5 forms radiant light 14B and sequentially forms line image 100 on substrate 6 〇 10. In an embodiment, converter/optical system 16 of Figure 2C Also included is a peripheral vibrating aperture 18〇 disposed in front of the lens L1. This removes the outermost beam of incident light 14A, which is overcorrected by the spherical aberration of the system, which additionally causes other flat shots. The intensity of the edge of the beam intensity curve is sharply increased. Fig. 2D is a diagram of an exemplary beam intensity curve P2 of a non-peripheral dim angle uniform radiant light 14A formed by a typical optical converter 15 。. Typically, a flat shot Shuqiang The curve P2 has a flat portion 2〇〇 for most of its length and includes an intensity peak 21〇 near the end point 204 of the beam. The outer portion of the beam is removed by the peripheral fringe 20 aperture I80, which is also more uniform. The beam intensity curve P2 is as shown in Fig. 2E. Although the outermost beam of the peripheral vignetting radiation 14A can be utilized to avoid an increase in the intensity of the beam end 204, sometimes an increase in intensity near the end of the beam produces uniform heating. It is desirable. The heat at the end of the beam 2〇4 is lost along the parallel and vertical 18 1272149 linear image 1〇〇 (Fig. 1B). Therefore, the beam end point 2〇4 has a relatively high strength to help compensate. High heat loss. This results in a more uniform temperature profile on the substrate as the image is scanned. More specific example 5 Figure 3 is a simplified diagram of device 10 similar to Figure 1A. The figure further includes a plurality of additional elements located across the top of the figure and above the substrate 60. These additional elements are not officially separate or different combinations and have been included to illustrate additional embodiments of the invention. In a specific example, It is clear to those skilled in the art how many additional elements are described in FIG. 3, and whether or not they have been described in the previous embodiment, the same is true in the embodiment to be described. In order to simplify, Figure 3 has been shown to include all of the elements required in these additional implementation specific examples, and some of these implementation specific examples are indeed based on the specific examples previously described. These additional implementation specific examples are Description 15 Referring to Figure 3, in the embodiment, the device 10 includes an attenuator 226 disposed at the rear of the radiation source 12, selectively attenuating the light beam 14A, the light beam 14A according to the position of the attenuator Or light light 14B. In an embodiment, the 'radiation light MA is polarized in a particular direction (eg p, s or a combination of both, / 2 〇 and the degasser 226 includes - a direction of polarization relative to the light of the light) The polarizing plate 227 is rotated to attenuate the light. In another embodiment, the viewer includes at least a movable attenuator, or a programmable attenuation disk having a plurality of attenuator elements. In the yoke example 10, the attenuator 226 is coupled via line 228 to the control 19 1272149 70 and is controlled by the signal 229 of the controller. Quarter Wave Plate In another embodiment, the radiant light 14 is linearly polarized, and the device 10 includes a quarter wave plate 230 to convert the linear 5 polarized light into a circle after the radiation source 12 Polarized light. The quarter wave plate 230 acts in conjunction with the attenuator 226 in an embodiment including the polarizer 227 to prevent the radiated light reflected or dispersed by the substrate surface 62 from returning to the radiation source. In particular, the circularly polarized radiant light reflected from the upper side of the return path is converted into linearly polarized light, which is again blocked by the polarizing plate 227. This configuration is particularly useful when the angle of incidence φ is at or near 10 zero (i.e., at or near normal incidence). Optical Energy Monitoring System In another embodiment, the apparatus 10 includes a light energy monitoring system 25 disposed along the axis 1 in the rear of the radiation source 12 to monitor the energy of the individual beams. System 250 is coupled to controller 70 via line 252 and is coupled to the control device for the signal of the detected light energy. Folding Mirrors In another embodiment, the device 1 includes a folding mirror 26 to make the devices tighter or form a particular device configuration. In an embodiment, the folding mirror 260 is movable to adjust the direction of the light 14Α. In addition, in an embodiment, the folding mirror 260 is coupled to the controller 70 via line 262 and is controlled by the signal 264 of the controller. Reflective radiation monitor

Referring to Figure 3, in another embodiment, the apparatus includes a reflected radiant light monitor 280 for obtaining the ray 20 127 149 illuminating light 281 reflected by the substrate surface 62. Monitor 280 is coupled to controller 70 via line 282 and provides a signal 284 representative of the amount of reflected radiation 281 that it detects to the controller. Figure 4 illustrates an embodiment of a reflected radiant light monitor 280 for use in a device 10 having an angle of incidence φ (1st or 2nd 8th) equal to or near 〇. Implementation 5 specific examples. Reflected radiance light monitor 280 uses a beam splitter 285 along axis A1 to direct a small portion of reflected radiant light 281 (Fig. 3) to a detector 287. The & 280 is connected to the controller 70 via line 282 and provides a signal 284 representative of the detected radiant light to the controller. In an embodiment, a focusing lens 290 for focusing the reflected radiant light 281 is included in the detector 10. The reflected radiation light monitor 280 has several applications. In one mode of operation, the image 100 is rendered as small as possible and the signal difference in the reflected radiation monitor signal 284 is detected. This signal is then used to determine the difference in reflectivity across the substrate. This mode of operation requires that the detector (e.g., detector 287) should have a time equal to or less than the duration of the scan light. By adjusting the angle of incidence, the polarization direction of the incident light 14 调整 is adjusted or both are minimized. In the second mode of operation, the light energy monitoring signal 254 (Fig. 3) of the light energy monitoring system 250 is combined to accurately measure the amount of radiation absorbed. The energy in the radiant light is then adjusted to maintain a fixed absorption of radiation. In the second mode of knowledge, the reflected radiation light monitoring signal 284 is compared to a value of the threshold value, and a signal exceeding the threshold value is detected as an undesired abnormality as a warning, requiring further investigation. In an embodiment, the difference data associated with the reflection of Koda ray is archived (as stored in controller 21 1272149). After the substrate processing is completed, the corresponding substrate identification code can help determine any abnormality. the reason. Analytical Systems In many heat treatments, it is helpful to know the maximum temperature or temperature _ 5 time curve of the surface being treated. For example, in the case of joint annealing, the LTP 柃 needs to be controlled very close to the highest temperature. The proximity control is achieved by controlling the output power of the continuous radiation source using the detected temperature. Ideally, the control system has a faster response time than the scanned image, or approximately equal. 1A Thus, in addition to FIG. 3, in another embodiment, the apparatus 1 includes an analysis system 300 coupled to the substrate 60. The analysis system 3 is coupled to the controller 70 via line 3〇2 and is adapted to perform a particular analytical operation, such as measuring the temperature of the substrate 62. The analysis system 3 provides a signal 304, such as an analytical measurement of the substrate temperature, to the controller. 15 Refer to Figure 4, when the incident angle Φ is at or near 〇. The analysis system 3 is rotated out of the path of the focusing optical system 20. Fig. 5 is a detailed enlarged view of an analysis system 300 for measuring the position of the scanned image or the temperature in the vicinity, in a specific example. The system 3 of Fig. 5 includes a collecting lens 340 along the axis A2 for collecting the emitted light rays 31, and 20 for separating the collected radiant light 31, and guiding the radiation to the line 302A and 302B is connected to two detectors 35, 8 and 35 〇 b splitter 346 of controller 70, respectively. Detectors 350A and 350B detect different bands of radiant light 31 。. A very simple analysis system 300 configuration includes a single detection 22 1272149, such as a detector 350A, which is aligned to obtain the hottest point at the trailing edge of the radiant light (Fig. 3). Usually the signal 3Q4 obtained by the picker will change because the image 100 encounters a different film (not shown) having a different reflectivity on the substrate. For example, tantalum, niobium oxide and a thin polycrystalline tantalum film on the oxide layer have different reflectivities in the normal incidence direction and result in different thermal light transmittances. One way to deal with this problem is to use only the highest signal obtained to estimate the temperature for a given time interval. This approximation is improved because of the reduced accuracy of the detector response time. 10 Continuing with reference to Fig. 5, in an embodiment, the collection lens 340 is focused at the trailing edge of the image 100 (moving in the direction of arrow 354) to collect the radiant light 310 emitted by the hottest spot on the substrate 60. Thus, the hottest (i.e., highest) temperature on substrate 60 can be directly monitored or controlled. The temperature of the control substrate can be accomplished by several methods, including by varying the energy of the continuous radiation source 12, using 15 to adjust the attenuator 226 (Fig. 3), using a change in substrate scanning speed or image scanning speed' or any combination thereof. . The temperature of the substrate 60 can be measured by providing the same surface 62 with the same thermal emissivity from the radiation radiation 31 〇 ' at which the radiation is monitored at a single wavelength. If the substrate 62 is patterned, the temperature can be measured by monitoring the wavelength between the two phases of the near-space during the scanning operation, assuming that the thermal radiance does not change rapidly with the wavelength. Figure 6 is a plot of intensity vs. temperature black body temperature at 1410 ° C (Figure), the temperature is the upper limit used in some fixed heat treatment applications to activate the doping of the source and drain regions of a semiconductor transistor Objects such as regions 66A and 66B of transistor 67 (Fig. 3). As can be seen from Figure 6, the temperature of 23 1272149 degrees close to 1410 ° C can be monitored at 0.8 μm and 1.0 μm using detectors 35 〇 A and 350 B in the 夕 侦测 detector array. The advantage of using a detector array compared to a single detector is that the former can take many temperatures along and across image 100 so that any uneven or irregular temperature can be quickly detected. In a specific example of the implementation of dopants in the active source and the 5th drain region 66Α and 66Β, it is necessary to raise the temperature to 140 (TC temperature and the point-to-point difference of the highest temperature is less than 1 (rc. In the 1400 ° C range, the two spectral regions may range from 5 〇〇 nm to 800 nm and from 800 nm to 1100 nm. The signal ratios of the two detectors are accurately temperature dependent, assuming two different materials on the substrate surface. There is no significant difference in the thermal emissivity of the spectral region. The temperature is controlled by the ratios of the signals 304 and 3046 obtained by the detectors 350 and 3506 to make it relatively easy to achieve a reaction time approximately equal to the retention time. Control loop bandwidth. An alternative approach is to use detectors 15350A and 350B in the form of detector arrays, where the two arrays are developed on the same substrate area but using different spectral regions. The temperature curve of the treatment area and the temperature and temperature unevenness of Yuannan can be accurately determined. This configuration can also uniformly adjust the beam intensity curve. In this configuration, the Shixia debt test can be used. The control loop bandwidth has a reaction time approximately equal to the dwell time. 20 Another method of compensating for different heat emissivity films on the substrate is to configure the analysis system 300 to utilize p-polarized radiation in a near stone In the case of the Brewster's angle, the wavelength is related to the wavelength sensed by the system 300. The absorption coefficient at Brewster's angle is very close to a single, so it is also the heat 24 1272149 The rate of incidence. In an embodiment, the method combines with the method of taking the ratio of the two adjacent arrays at two adjacent wavelengths. In this case, the plane containing the observation axis of the analysis system will contain the light-correcting i4B and the reflection. The plane of the radiant light 281, as shown in Figure 7. 5 The image can be uniformly heated on the wire A. However, many possible defects in the diffraction and in the optical chain can interfere with the formation of the image and cause such as no Unpredictable results of uniform heating. Therefore, it is highly desirable to have a built-in image monitoring line to directly measure the energy uniformity in the image. 10 帛5 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific example of the implementation of the image monitoring system 36. In an embodiment, the image monitoring system is disposed on the sweeping path and in the plane PS defined by the substrate surface 62. The image monitoring system includes an orientation sweep. The hole 362 of the cat path and the tearer of the device behind the hole. During operation, the substrate stage 46 is placed so that the side material 咕 典 典 典 扫 扫 典 , , , , , , , , , , , 代表 代表 代表 代表 代表 代表 代表 代表 代表 代表The image monitoring system 360 is connected to the control (four) 7 经由 via line 366, and provides a signal 368 representing the product of the sacred illuminator to the controller. ~ Image. The sampling of the file provides a determination of the image intensity curve (eg, 1C) The required data, which in turn determines the uniformity of substrate heating. 20 Substrate pre-calibrator Referring again to Figure 3, in some instances, the substrate 6 need to be placed in the chuck 4Q in a predetermined direction. For example, the substrate 6G may be a crystalline body (e.g., a crystalline wafer). The inventors have discovered that the substrate of the working crystal is used for heat treatment, and generally tends to align the crystal axis with respect to the image 1 使 in the selected direction to handle the most 25 1272149 Jiahua. Accordingly, in a consistent embodiment, device 10 includes a pre-calibrator 376 coupled to control (4) via line 378. The pre-calibrator accepts the substrate (9) and aligns it to a 5$ test position PR' using a reference feature 64 such as a plane or a notch and moves (eg, rotates) the substrate until the reference feature calibrates the selected direction for processing. optimization. Signal 380 is transmitted to controller 70 when the substrate is calibrated. The substrate is then transferred by a pre-calibrator to the stage 4 via a substrate controller 386 as a connection stage and pre-calibrator 376. Substrate control port 386 is coupled to controller 7 via line 388 and is controlled via signal 39. The substrate 60 is then placed on the stage 40 in a direction that is consistent with the pre-calibration on the pre-calibrator 376. Measuring absorbed radiation The energy of one of the radiated light 14A, 14A, or 14B is measured by the optical energy monitoring system 250, and the energy 1 of the reflected radiation 15 281 is measured by the monitoring system 28 to obtain absorption by the substrate 60. Radiant light. This sequentially keeps the radiation absorbed by the substrate 60 constant even in the case where the reflectance of the substrate surface 62 changes during scanning. In an embodiment, the energy absorbed per unit area of the storage and fixation is achieved by adjusting one or more of the following: output power of the continuous light source 12; 20 speed of the image 100 on the substrate surface 62 And the degree of attenuation of the attenuator 226. In the specific example, the fixed energy absorbed per unit area is achieved by changing the polarization of the radiated light MB, such as by rotating the quarter wave plate 230. In another embodiment, the energy absorbed per unit area is altered or remains fixed by the combination of the techniques described above. Selected Infrared Rays 26 1272149 The absorbance of the wavelength in Shi Xizhong increases with the improvement of doping impurities in the conductivity of Shixia. Even if the incident radiant light reaches a minimum absorbance at room temperature, any increase in temperature increases its absorbance, thus creating a runaway cycle that quickly causes all incident energy to be absorbed by a surface layer that is only a few microns deep. 50, this heating depth in the chopped wafer is mainly spread by the surface of the hot money

To decide, not the depth of absorption by the infrared wavelength at room temperature. Similarly, doping with η-type or p-type impurities increases the room temperature absorbance and promotes this uncontrolled cycle, resulting in a strong absorption of the material at the first few microns. Incident angle at or near Brewster's angle 1 〇 In an embodiment, the angle of incidence φ is set to be consistent with Brewster, sangie. All p_polarized radiant light p (Fig. 3) is absorbed in the substrate 60 at the Brewster's angle. Brewster, angie is based on the refractive index of the material on the incident radiation. For example, Brewster, s & tons 4 at room temperature is 73 69. And the wavelength is λ = 10.6 μm. Since about 30% of the incident radiant light 14β is reflected at normal incidence 15 directional = 0), the power required for heat treatment can be reduced by reducing the mother 面积 area at or near Brewster, angle using p-polarization. Using a relatively large angle of incidence such as Brewster, the s angle also causes the image 100 to be widened in one direction by cos- (p, or about 35 times the width of the normal-incident image. The effective depth of the image 100 is similarly similar. The element is reduced. 20 When the substrate 60 has a portion of a different region having a multi-layered surface 62, as in the case of a typical semiconductor processing 1 (where ^, the angle most suitable for processing can be plotted from different regions to reflect the incident angle φ Measurements. It is generally found that p-polarized light strikes exhibit minimal reflectivity at each substrate near the Brewster's angle. An angle is usually found, or a small range of angles minimizes and equals reflectivity in each region of 27 1272149. In a consistent embodiment, the angle of incidence φ is limited to the range of angles around the Brewster's angle. In the embodiment where the BreWster's angle is 73.69., the angle of incidence 9 can be limited to between 65 and 80. Optimum radiant light structure In an embodiment, the substrate 60 is heat treated on the surface 62 by means of a scanned image 1 ,, resulting in a small volume on the surface of the substrate. The material is heated to a temperature close to the melting point of the substrate. Accordingly, a large amount of stress and strain is generated in the region where the substrate is heated. In some cases, this stress causes an undesired slippage that spreads to the surface 62. Similarly, in one embodiment, the radiant light 14α is polarized. In this case, the direction of polarization of the incident radiant light 14 相对 relative to the substrate surface 62 is selected as the direction of the incident radiant light 14 Β the incident surface 62. In addition, the heat treatment of the substrate 60 usually involves a process in which the substrate has undergone more than a few other processes that change the properties of the substrate such as structure and type. Fig. 7 is a semiconductor on which a pattern 4 is formed. The embodiment of the substrate 60 in wafer form is an enlarged isometric view. In an embodiment, the pattern 4 includes lines or sides 404 and 406 to form a grid having lines/edges running in the X- and γ-directions. (ie, a Manhattan geometry.) Lines/edges 404 and 406 are equivalent to the edge of more than 20 channels, gate and field oxide isolation regions or 1C wafer boundaries. Generally, in 1C wafer fabrication, the substrate It is often continuously patterned and the patterns are perpendicular to each other. Therefore, when the substrate (wafer) 60 reaches the annealing process in the IC process or the source and drain regions 66A and 66B need to be activated, the surface 62 has been substantially 28 1272149 For example, in a typical IC process, one area of surface 62 may be pure tantalum, while another area of the surface may have a relatively thick tantalum oxide isolation trench, while other areas of the surface may have thin polycrystalline germanium conductors. Crossing the thick oxidation ditch. 5 Accordingly, if not noted, the image 100 will be reflected or diffracted by portions of the substrate surface 62 and will be selectively absorbed in other regions according to the surface structure, including lines/ The main directions of sides 404 and 406. This is particularly true in the specific embodiment where the radiant light 14B is polarized. The result is uneven substrate heating, which is generally undesirable in heat treatment. 10 Therefore, with continued reference to FIG. 7, in an embodiment of the present invention, it is desirable to find an optimum radiant light structure, ie, polarization direction, angle of incidence 扫, scanning speed, and image angle Θ to radiate light 14B. The difference in absorbance on the substrate 60 is minimal. It is further desirable to find the optimum radiant light structure that minimizes the slip plane created in the substrate. 15 The point-to-point difference in the radiant light 281 reflected by the substrate 60 is caused by several factors 'including the difference in film composition, the number and ratio of lines/edges 4〇4 and 406, the orientation of the polarization direction, and the incident angle φ. . Continuing with reference to Figure 7, a plane 440 is defined to include radiant light 14 反射 and reflected radiant light 281. The substrate can be illuminated with radiant light MB to minimize the difference in reflectivity due to the presence of lines/20 sides 404 and 406, such that plane 440 intersects on substrate surface 62 and lines 45/4 and 406 become 45. . The line image is formed such that its long direction is also calibrated to the same plane 440 or perpendicular to this plane. Therefore, regardless of the incident angle φ, the image angle 介于 between the line image 1〇〇 and the opposite lines/edges 404 and 406 is 45°. 29 1272149 Due to the difference in the amount of reflected radiation 281 caused by different structures on the substrate surface 62 (such as line/edge tearing), the incident angle φ can be selected to be further reduced step by step. For example, 'in the case of forming a transistor as a germanium, when the substrate 60 is ready to anneal or activate the source and drain regions 66 and 5 66B, it typically includes all of the following types: a), _, b) An oxidized insulator (e.g., about 0.5 micron thick) buried in the stone, such as a thin (e.g., 0.1 micron) polycrystalline litter flow path at the top of the buried oxidized insulator. Figure 8 is P-polarized radiation? And 8_polarized radiant light s, 1 〇 6 micron wavelength laser radiation, in the above-mentioned room temperature anti-radiation rate of the top end of each type of doped yttrium substrate, the reflectivity of the oxide layer along the infinite deep 矽 layer. It can be clearly seen from Fig. 8 that the reflectance varies greatly with polarization and incident angle. The angle of incidence φ is between about 65. To about 8 baht. The p-polarized radiant light p (i.e., polarized in plane 440) has the lowest reflectance in all four cases and the smallest difference from each case. Therefore, by about 65. To about 80. The range of incident angles φ is particularly suitable for the device 10 to heat treat a semiconductor substrate (e.g., activated in the doped region of the germanium substrate)' because it reduces the total power required and the point-to-point difference in the absorbed radiation. The presence of a tamper or higher temperature makes the ruth more like a metal and shifts the minimum relative to the Brewster's angle to a higher angle and a higher reflectance. Therefore, for doped substrates and/or higher temperatures, the optimum angle is higher than that of the doping material under the chamber/dish. Figure 9 is a top isometric view of a device 10 for processing a semiconductor wafer-form substrate 60 showing operation of the device in an optimal radiant light structure. Wafer 60 includes a gate pattern 400 formed thereon, and a square 30 1272149 468 in each gate represents a 1C wafer (e.g., circuit 67 of Figure 1A). The line image 1〇〇 is scanned at 470 with respect to the substrate (β曰曰) surface 62 so that the image angle θ is 45. . Calculating the crystal orientation As described above, a crystal substrate such as a single crystal germanium wafer has a crystal surface 5 whose orientation is generally defined by a reference feature 64 formed at a cross section 63 in the substrate relative to a major crystal plane direction (as shown in FIG. The notch or plane of Figure 9 is indicated. The broom of the line image 100 produces a large thermal gradient and stress concentration in the direction 474 of the vertical sweeping direction 47 〇 (Fig. 9), which has an adverse effect on the structural integrity of the crystal substrate. 10 Continuing with reference to Figure 9, the Shixi substrate 60 has a (1〇〇) crystal orientation under normal conditions, and the lines/edges 404 and 406 are aligned and the two major crystal axes (100) and (010) on the wafer surface. Into 45. . A preferred scanning direction reduces the slip plane formed in the crystal along a major crystal axis. Therefore, the preferred direction of the sweeping force used to reduce the slip formation in the crystal is also consistent with the preferred orientation of the tantalum substrate for the lines/edges 404 and 406. If there is a line image 100, lines/edges 404 and 406, and the crystal axis (10 (7) and (010) maintain a fixed direction, the image scan with respect to the substrate (wafer) 60 must be linear (ie Backward or forward) instead of circular or arched. Similarly, since the preferred direction of the sweeping field requires respect to the crystal orientation, the substrate is pre-calibrated on the 20 chuck 40 using a substrate in an embodiment. The device 376 (Fig. 3) is pre-calibrated. By carefully selecting the orientation between the substrate crystal axes (100) and (010) and the scanning direction 470, the slip plane due to thermally induced stress in the crystal substrate can be reduced. Possibility. The most suitable scanning direction is due to the thermal gradient, which causes the crystal lattice to have the largest slip resistance. It is generally believed that it differs according to the nature of the substrate crystal 31 1272149. However, the spiral pattern of the single crystal substrate can be The middle broom image touches and inspects the wafer to determine the direction, and the highest temperature ladder wire is experimentally found to be the most suitable direction before the slip occurs. In one (the same as the wafer 60 in the form of the wafer) Suitable for sweeping the cat side 5 to be school To the (_substrate lattice direction or the pattern gate direction indicated by the line/edges 4〇4 and 4〇6 is 45. This has been verified by the inventors using a broom-radial line image 1GG in a spiral pattern. The maximum temperature and the distance between the base and the center are a function. The direction of the comparison and the direction of the crystal axis has the largest anti-slip direction to obtain the most suitable direction for sweeping. 10 Image Scanning Folding Cat 10th The figure is a plan view of the substrate. A pattern 52 is scanned on the surface 62 of the substrate (P is changed backwards and backwards and toward the shovel or "χ_γ") to mark the dots on the substrate. A short heat pulse is generated. The scan pattern 520 includes 5 linear sense scan segments 522. The fold scan pattern 520 can be completed by a conventional two-way parent 4 stage. However, this stage typically has a large weight and is limited /, speed up the force. If a very short dwell time (that is, the time at which the scanned image is at a specific point on the substrate) is required, the conventional stage will waste a lot of acceleration and deceleration time. The stage also takes up a lot of space. For example, 1 〇〇 from the meter A light width pause time of 10 microseconds requires a carrier speed of 10 meters per second (m/s). At an acceleration of k or 9.8 m/s2, it takes 1.02 seconds and moves 5.1 meters to accelerate/decelerate. 10.2 meters of space for the stage to accelerate and destroy the speed system is not required. Optical scanning g-miao 32 1272149 On the substrate surface 62, the image loo scan can be used, using the stationary substrate and moving the image, using the moving substrate and keeping the image still Or the substrate and the image are moved. The figure is a cross-sectional view of an embodiment of the optical system 20, which includes a movable scanning mirror 260. The optical scanning can be used to achieve a very high efficiency acceleration/deceleration rate. (ie the rate at which the stage needs to move to achieve the same scanning effect). In the optical system 2 of Fig. 11, the radiation 14 Α (or 14 Α,) is reflected by the scanning mirror 260 of the aperture 1 位于 of the flat field reticle optical system 2 formed by the cylindrical lenses L10 to L13. In an embodiment, the scanning mirror 260 and a servo motor assembly 54 connected to the controller 7 via a line 542 are coupled and driven. The servo motor assembly 540 is sent by the controller 70 and transmitted by the line 542. 544 to control. The optical system 20 scans the radiant light 14 on the substrate surface 62 to form a moving image 100. The stage 46 increases the substrate area in the direction of the two-way sweeping of the seedlings to cover the required scanning area of the substrate. In an embodiment, the lens elements L10 to L13 are made of ZnSe and can penetrate the infrared light emitted by the radiation emitted by the c〇2 laser and the near-IR and visible radiation emitted by the heated portion of the substrate. . This allows the dichroic beam splitter 550 to be placed on the front of the path of the radiant light 14A of the scanning mirror 20 260 to separate the long-wavelength radiant light 14A used to heat the substrate from the visible and near-IR wavelengths of the luminescence emitted by the substrate. The radiated radiation 310 is used to monitor and control the substrate heat treatment and is coupled to the light analysis system 560 of the controller 70 33 1272149 via a collection lens 562 and detector 564 via line 568. In an embodiment, the radiant light 310 of the enemy radiation is filtered and focused to a separation detection array 564 ί θ θ). The signal 570 corresponding to the amount of radiated light is detected by the detector 564 and is supplied to the controller 70 by the fine green, φ, 、, and 256. 5 Although Fig. 11 shows that the radiant light 14B has an entanglement angle φ = 〇, in another embodiment, the angle of incidence of the person is cp > (). In the embodiment, the incident angle φ is changed by appropriately rotating the substrate stage 46 along the axis AR.

One of the advantages of optical swept cats is that they can be performed at very high levels, so the time was wasted in accelerating and decelerating the beam or stage. In the commercially available scanning optics 10 system, the same effect as the acceleration of the 8000g stage can be achieved. Spiral Sweeping Cat In another embodiment, image 100 is scanned against a substrate 6 under a spiral pattern. Figure 12 is a plan view of four substrates 60 on stage 46, wherein the stage has the ability to rotate and linearly move relative to image 100 to produce a spiral sweep pattern 604. This rotational motion is rotated by the center of rotation 61〇. Similarly, stage 46 can carry several substrates, showing four substrates for reasons of illustration. In another embodiment, the stage 46 includes a linear stage 612 and a rotating stage 614. The spiral scan pattern 604 is formed by the linear and 20 rotation operations of the bonded substrate, so that each substrate is covered by the spiral scan pattern. In order to fix the time at which each point stays on the substrate, the rate of rotation is inversely proportional to the distance between the image 100 and the center of rotation 61. The spiral scan has the advantage of no rapid acceleration/deceleration except for the start and stop processes. Accordingly, this configuration can be used to actually obtain a short retention time. Another advantage is that several substrates 34 1272149 can be processed in a single scan operation. Alternating the grating sweep S on the substrate 60 to scan the image 100 at a small adjacent path pitch pattern will cause overheating at the end of the substrate sweeping cat segment, and the scanning segment end point is a 5 segment just completed and starting another - When the clip. In this case, the portion of the new sweeping path segment begins with a significant thermal gradient due to the scanning segment segment that has just been completed. This gradient increases the temperature due to the new scan unless the beam intensity is properly adjusted. This makes it difficult to achieve a uniform maximum temperature across the entire substrate when the broom is caused. 10A and 13B are plan views of a substrate 60 illustrating an alternate raster scan path 7〇〇 having linear scan path segments 702 and 704. Referring first to Figure 13A, in the alternate raster scan path 7, the scan path segment 702 is first placed with an interval of 7 〇 6 between adjacent scan paths. In an embodiment, the spacing 706 has a size equal to a positive multiple of the effective length of the line scan. In an embodiment, the width of the space 706 is the same as or close to the length L1 of the image 100. Next, referring to Fig. 13B, scan path segment 704 is again applied to fill the intervals. This scanning method greatly reduces the thermal gradient of the scanning path caused by the continuous scanning of the path segments at a close distance, making it easier to reach a uniform maximum temperature across the entire substrate. 20 The output of the sweeping seedling pattern is compared to the vehicle intersection. Figure 14 shows the spiral scanning method (curve 7 20), the optical scanning method (curve 724) and the folding (χ_γ) scanning method (curve 726) in a simulated yield ( Substrate/hour) A plot of retention time (seconds). This comparison assumes that an implementation example uses a 5 kW laser as a continuous source of radiation, which is used to generate a Gaussian beam and has a Gaussian image of 100 1 micron beam width L2 of 35 1272149, which is scanned in an overlapping scan path. Approximately ±2% of the uniformity of the radiant light. From the figure, it can be seen that the spiral scanning method has a good yield under all conditions. However, the spiral scanning method processes a plurality of substrates at a time, so that a large area is required to support the 4 chucks. For example, for four crystal circles, the surface diameter needs to be greater than about 8 mm. Although the disadvantage of this method is that the line scan image and the crystal orientation of the substrate cannot be maintained, it is impossible to maintain an optimum processing structure for a crystal substrate. The output of the optical broom method is almost independent of the hold time and is advantageous over the χγγ10 stage scanning system, which requires a high scan speed for short residence times. Circulating Optical System In the present invention, it is quite important to transfer energy to the substrate 60 as much as possible from the continuous radiation source 12. Accordingly, reference is made briefly to Fig. 19, which will be described in detail below. In an embodiment, the radiation *14b has a range of incident angles of 15 on the substrate. That is, the optical system 20 has a plurality of apertures NA = sin 014b, wherein eHb is a half angle formed by the outer beam 15A or 15B of the axis A1 and the radiant light 146. Note that the incident angle φ 形成 formed by the axial beam (axis Ai) and the substrate surface normal N is referred to herein as the "central angle", which is the angular range provided by the radiant light 14B. 20 In an embodiment, The central angle 014b can be selected to reduce the difference in reflectivity between different film stacks (not shown) on the substrate. The portion of the Korean light 14 reflected by the substrate surface 62 is not easily avoided. One embodiment of the embodiment includes capturing the reflected radiant light 23R and redirecting it back to the substrate as "circulating radiant light" 23RD, which can be absorbed by the substrate at which the incident radiant light 14B is reflected. The circulating radiant light 23RD further assists in the annealing process by providing additional thermal energy to one or more substrate regions (e.g., regions 66A, 66B of Figure 1). Accordingly, referring now to Fig. 15, there is shown a detailed enlarged schematic view of a specific embodiment of a laser scanning device of the present invention. The device 10 of Fig. 15 is similar to that of Fig. 1A, however it further includes a cyclic optical system 900 configured to obtain reflected radiation light 23R' and direct it back to the substrate as circulating radiant light 23RD. The circulatory optical system 9 is disposed along the axis AR and forms an angle cp23RD with the surface normal N. In order to obtain the optimum reflection 10 of the radiant light 23R of the circulating optical system 9, the angle cp23RD is the same as the radiant light incident angle φ ΐ 4 在一 in an embodiment. It should be noted that in the present invention, the substrate is illuminated by a pulse of radiation. As described above, the "pulse" of the radiation is scanned by the radiant light 14 , such that the selected portion of the substrate is exposed to the radiation 15 在 at a particular time, i.e., the duration of the light. Strictly speaking, in the embodiment 10 having the circulatory optical system 900, the reflected wheel light 23R actually constitutes a second pulse which is weaker than the pulse accompanying the incident radiant light 14 。. The second pulse time is delayed by the amount of time AT^OPL/c compared to the first pulse, wherein 〇pl is the optical path length traveled in the circulating optical system 900 before the reflected radiation light 23R returns to the substrate, and 〇 is 20 light speed (~3xl08 m/s). Since the OPL is a level of one meter or less, the delay time ΔΤ between pulses is 10_9 seconds. When the scanning speed level is 1 m/s, the spatial separation of the first and second pulses on the substrate surface 62 is ~(1 m/s) (lCT9s)~l (T9m, which is in Ray In the case of shot annealing, the space 37 3712149 is separated. Therefore, the incident and reflected radiation light effectively overlap, that is, they can reach the same part of the substrate at the same time for all the purpose of the bill. Therefore, the combination of incident and reflected pulses results in a single Enhance the radiant light pulse of energy. In other words, for all purposes and uses, the incident (first) radiant light 14B and the cyclic (second) 5 rounds of illuminating light 23RD illuminate the substrate simultaneously (eg, in one or more regions thereof) Figure 16 is a cross-sectional view showing a specific embodiment of a circulating optical system 900 including a hollow right angle mirror 910 and a collecting/focusing lens having a focal length F and a distance from the lens AR to the substrate surface 62. 916. Hollow right angle mirror 910 has three reflective surfaces that intersect each other perpendicularly, although a simplified illustration of 10 'shows only two surfaces 912 and 914 in Fig. 16. In operation of loop optical system 900 of Fig. 16, Lens 916 collects the opposite The parallel light 920 is radiated. The parallel light is reflected by the three reflecting surfaces and is guided back to the lens 916 in the completely opposite direction, on the other side of the axis AR, as the parallel light 920' constituting the % light beam 23R. 920, the original point 321 is collected and refocused by the lens 916 on the substrate surface 62. Fig. 17 is a cross-sectional view showing a modification of the embodiment of the embodiment illustrated in Fig. 16, wherein the right angle mirror 910 is displaced relative to the axis AR ( Deviation) The amount of Δ£> This causes the reflected radiant light 23R and the circulated radiant light 23RD to deviate from the incident angle of the substrate. Note that the position of the beam on the substrate remains the same _ only the incident 20 angle changes. The relative deviation of the angle of incidence can be utilized to prevent the reflected radiation from traveling back to the continuous source 12 (Fig. 15). In one particular embodiment of this particular embodiment, the reflection of the right angle utilizes all internal reflections because it is unable to maintain the polarization of the beam. Figure 18 is a cross-sectional view of a loop optical system 9 1 38 1272149 of another embodiment, which includes a cylindrical mirror 950, a first cylindrical lens 352, sequentially along the axis AR by the substrate 60. The aperture 954, the second cylindrical lens 956, and one is referred to as a polarization maintaining ridge mirror 960. In an embodiment, the first and second cylindrical lenses 352 and 956 have the same focal length (F,), and It is separated to its double focal length 5 water length (2F) and halfway through it IX to form an aperture 954. The roof mirror 960 is located at a distance from the cylindrical lens 956F' and the ridge mirror 960 is directed toward the direction of polarization of the polarized radiation. In the specific embodiment of the loop optical system 900, it is assumed that the radiated light 14B is focused by the optical system 2〇〇 and forms an image on the substrate (Fig. 10). The cylindrical mirror 950 obtains and collimates the reflected radiant light 23R, which in turn penetrates the cylindrical lenses 952 and 956. The roof mirror 960 is configured to change the direction of the light beam back through the cylindrical lens to the cylindrical mirror and back to the surface of the substrate. The tilting of the roof mirror 960 relative to the incident light beam 23 determines the angle at which the preheated radiant light 23RD incident in the direction is changed to the substrate 60. In an embodiment, the polarization 15 light holding ridge mirror 960 includes a slight tilt design to prevent the circulating radiant light 23RD from returning to the continuous radiation source 12. Back radiation from the laser or laser diode cavity can cause operational problems such as instability of the laser output power. Fig. 19 is a cross-sectional view showing another embodiment of the circulatory optical system 900, which includes a collimating/focusing lens 1050 and a grating yoke 60 having a grating surface 1062. In one embodiment, the lens 1〇5〇 is a high resolution, having a telecentric lens of the first and second lenses 1070 and 1072 and an aperture stop 1074 between the first and second lenses. Further, in this embodiment, the lens 1050 has a focal length F1 on the substrate side and a focal length F2 on the grating side, and the lens is configured such that the substrate surface 62 is located at the axis 10 of the lens 1070 39 1272149. The distance, and the grating i _ is located at a distance F2 from the axis along the lens 2 . The two lenses are also separated to the same distance as the sum of their two focal lengths. The grating surface 1062 is preferably adapted to cause the wavelength of the light-emitting light in the diffracted reflected light 23R to be at most U 匕, and to limit the incident light incident on the surface of the glazing to be circulated to return along the incident path. The best grating period? For p print λ/2^ 〇 where λ is the wavelength of the radiant light, φ (3 is the angle of the grating incident with respect to the normal Ng of the grating surface, and η is the refractive index of the medium around the grating (η= for air) Ig) The purpose of the grating is to compensate for the tilt plane that is tilted on the substrate, and the other side of the plane is caused by the distance between the point 321 and the axial plane of the replacement lens 1〇5〇 in Fig. 19, which results in a return image. Defocusing. Note that in this configuration, the replacement lens 1050 is operated at -IX, cpG = (p14B = cp23R = cp23RD. Generally tancpG = Mtancp23R 'where μ is the magnification from the substrate to the grating replacement lens 1〇5〇. In operation, the reflected radiant light 23R is collimated using a telecentric lens 1050 that includes a lens 1070 and a lens 1072 that carries the radiant light to a focal point on the grating surface 1062. The grating surface 1 〇 62 changes direction (or more precisely That is, the radiant light is returned to the replacement lens 1050, which directs the now circulating radiant light 23RD back to the substrate surface 62 at or near the point 321 which reflects where the radiant light 20 is generated. A disadvantage of the example is that the reflected radiation 23R is shaped on the grating. A small image may cause final refining or other damage of the grating after a certain time. A similar problem encountered in the past is to replace the grating with a vertical incidence mirror (not shown). Therefore, in the use of the optical optical system 900 in Fig. 19 The implementation of the specific 40 1272149 example, care must be taken when operating the device 10. Figure 20 is a cross-sectional schematic view of a specific embodiment of a laser scanning device for annealing the substrate 60, wherein the devices are used in combination with a two-dimensional laser One pole array radiation source 12 and 12, and two 5 optical systems 20 and 20 disposed along axis A1 and ΑΓ, respectively. Continuous radiation sources 12 and 12 are operatively coupled to controller 70 and radiate radiation 14A, respectively. And 14A, each of the radiant light is received by the opposite optical systems 20 and 20. The optical systems 20 and 2 are generated by the radiant light 14A and 14A corresponding to the radiated light 14B and 14B', sequentially on the surface of the substrate. The image 1 〇〇 and 1 形成 are formed thereon. 10 In an embodiment, the optical systems 20 and 20 are at least partially enlarged to form an image on the substrate. In another embodiment, the image 1〇〇 and 1〇〇' In another embodiment, at least one of the annealed radiant beams 14B and 14B is incident on the substrate surface 62 at an incident angle of φ ΜΒ and φ ,, which is at or near Brewster, s angle cpB. 15 This configuration is reduced The need for continuous radiation sources 12 and 12 to output high power radiated light 14B and 14B'. The embodiment of the apparatus of Fig. 20 is not limited to two radiations 14 and 14B. In general, any reasonable continuous source of radiation 12 , 12', 12,,, and the relative number of optical systems 2〇, 2〇, 2〇,, etc., can be used to form a relative image on the substrate surface 62, 1〇〇, 1〇〇, 1〇〇, 2〇, etc. (such as line image) to achieve the desired annealing effect. The features and advantages of the invention are set forth in the Detailed Description of the invention. In addition, the actual construction and operation described herein will not be limited as will be apparent to those skilled in the art. Accordingly, other specific examples are within the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a schematic view showing a general example of a device of the present invention; 5 FIG. 1B illustrates an implementation of forming an ideal line image having a long dimension L1 and a short dimension L2 on a substrate by the apparatus of FIG. Specific example; Figure 1C shows a two-dimensional map representing the intensity distribution accompanying the actual line image. 1D is a simplified diagram of a specific example of an optical system of the apparatus of FIG. 1A, which includes a conical mirror to form a line image on a substrate; and FIG. 2A is a schematic diagram illustrating the implementation of the laser scanning apparatus in FIG. 1A. Specifically, it further includes a light converter disposed between the radiation source and the optical system; FIG. 2B is a schematic diagram illustrating how the optical converter in FIG. 2A changes the beam intensity curve of the radiated light; 15 2C A cross-sectional view of a specific example of a converter/optical system including a flat Gaussian beam intensity curve converter; FIG. 2D is a non-peripheral vignetting light formed by the converter/optical system of FIG. 2C A plot of the exemplary beam intensity curve; Figure 2E is a similar 2D image with the edge beam 20 removed from the peripheral vignetting aperture to reduce the intensity peak of the image endpoint; Figure 3 is a simplified diagram of the device similar to Figure 1A. In the drawings, the additional elements represent different embodiments of the present invention; FIG. 4 illustrates a specific example of the implementation of the reflected-radiation optical monitor of FIG. 3, the incident angle Φ is equal to or close to 0°; 42 1272149 Figure 5 is the third figure Used to measure the broom image on the substrate 1 A specific example of an enlarged Zhuang square analysis or near the location, the system of the embodiment. Figure 6 is a plot of the intensity versus temperature of the black body at a temperature of 141 ° C (Fig.), the temperature of which is slightly higher than the temperature of the dopant used in the source and the electrode 5 of the semiconductor-crystal; Figure 7 is a detailed enlarged isometric view of the substrate with the calibration features of the incident and reflected laser light in the plane of the grating pattern with respect to the light pattern of the light. The image of the image is 1 〇.6 micron wavelength laser radiation. The reflection of the polarization direction of the coffee surface is reflected by the following surface (4) pure stone eve (9) at the top of the stone etched 0.5 micron oxidized insulating layer, (4) at the top of the stone 〇 5 micron oxidized insulating layer 〇 · 1 micron a crystal spar flow channel, and (4) an infinitely deep stone oxide layer; FIG. 9 is a plan view of a specific example of the device of the present invention for processing a thumb pattern semiconductor wafer step substrate 60 formed thereon, illustrating that the substrate is Operating in the top 15 radiant light structure; $10 is a plan view of the substrate. A pattern of the image being folded over the surface of the substrate; τ ν Figure 11 is a cross-sectional view of an embodiment of an optical system, including a movable scanning mirror; 20 Fig. 12 is a plan view showing the rotation and linear movement of the four substrates on the stage, and a plan view of a spiral scan pattern is generated on the substrate; FIGS. 13 and 13 are diagrams showing an alternate grating 浐^ pattern of the substrate. The scanning path is such that the substrate can be scanned in the vicinity of the scan—

Pre-cooled space to separate; I 43 1272149 Figure 14 is a schematic diagram of the present invention in a spiral scanning method, an optical scanning method and a folding scanning method in a substrate/hour simulation yield versus microsecond residence time Figure 15 is a detailed 5 enlarged schematic view of a specific example of the implementation of the LTP system of Figure 1A, which further includes a loop optical system configured to obtain reflected radiation and direct it back to the substrate as a circulating radiant light. Fig. 16 is a cross-sectional view showing a specific example of the embodiment of the circulating optical system of Fig. 15, which includes a right-angle mirror and a collecting/focusing lens; and Fig. 17 is a cross section of a modified example 10 of the circulating optical system of Fig. 16. The figure in which the right angle mirror is displaced (deviated) by the amount of AD relative to the axis AR causes a deviation between the direct incident and the circulating radiation at the incident angle; FIG. 18 is a cross section of the embodiment of the circulating optical system of FIG. a simplified diagram comprising an enlarged successor set and a roof mirror; FIG. 19 is a schematic cross-sectional view of another embodiment of the loop optical system of FIG. 15 including a collimating/focusing lens and a grating; and a 20th Specific examples of embodiments of cross-sectional schematic view of LTP is a system that uses two laser diode arrays and arranged opposite the two LTP optical system similar to an incident angle normal to the substrate opposite the substrate is irradiated. [Main component symbol description] 10...device 40...chuck 12...continuous radiation source 42···upper surface 14A...radiation light 46...stage 14B...radiation light 50...plate 20...optical system 60...substrate 44 1272149 62... Substrate surface 63...cross section 64...reference feature 66A···source region 66B···outlet region 67...circuit 70...controller 72...line 76...stage controller 78...line 80...line 82...line 90... Signal 92...signal 94...signal 100...image 104...collimator lens 106...wheel 108...wheel 110...wheel 150...light converter 160...converter/optical system 170...beam 180...peripheral vibrating aperture 200...flat portion 204 ...beam end point 210···intensity peak 226...attenuator 227...polarizer 228...line 229···signal 230···quarter wave plate 250···light energy monitoring system 252...line 254· ··Light energy monitoring signal 260...folding mirror 262...line 264···signal 280···reflecting radiation monitor 281···reflecting radiation 282...line 284...reflecting radiation monitoring signal 285···beam splitter 287...detector 290···focusing lens 300...analysis system 302... Line 302A... line 45 1272149

302B...line 304···signal 310...radiation light 304A···signal 304B···signal 340...collection lens 346...beam splitter 350A···矽detector 350B...矽detector 352···first Cylindrical lens 354...arrow 360...image monitoring system 362···hole 364...detector 366...line 368...signal 376...pre-calibrator 378...line 380...signal 386...substrate controller 388...line 390···signal 400...pattern 404...line/side 406...line/edge 468···square 470···scan direction 474...direction 520...folding sweeping seedling pattern 522···linear scan scan segment 540··· Servo motor assembly 542...line 544···signal 550···two-color spectroscope 560···light analysis system 562...collecting lens 564...detector 568...line 570...signal 604...screw sweeping seedling pattern 610...rotation Center 612...linear stage 614...rotary stage 700...alternate raster scan path 702...linear scan path segment 704...linear scan path segment 706...interval 720...curve 46 1272149 724...curve 954...aperture 726...curve 956 ...the second cylindrical lens 900...the circulating optical system 960... Vibrating Preserving Roof Mirror 910··· Hollow Right Angle Mirror 1050... Collimation/Focusing Lens 912...Surface 1060···Light Thumb 914...Surface 1062···Optical Surface 916...Lens 1070...First Lens 920...Reflex Radial parallel light 1072...second lens 920'···reflecting radiation parallel light 1074... aperture stop 950... cylindrical mirror 23RD...circulating radiation 47

Claims (1)

Patent Application Scope Amendment No. 94.06 1272^^101534 Patent Application No. 10, the scope of the patent application ‧ a device for heat treating a region of a substrate, comprising a continuous radiation source, which is provided with a heatable a continuous first radiant light having a wavelength of the substrate region; 5 an optical system adapted to form the image on the substrate by the first radiant light and thereby forming the second radiant light; configured to obtain reflection from the substrate a circulating optical system of radiant light 'sub-guides the reflected radiant light back to the substrate as a cyclically reflected light; and a stage adapted to support the substrate, and scans the 10 substrate relative to the image _ the radiation of the light The first pulse, and the second pulse from the circulating light to the system, heats the region to a temperature sufficient to heat treat the region. 2. The device as claimed in the patent application, wherein the image is a line image. 15 3. For the device of the patent application, the (iv) circulating optical system comprises a collimating/focusing lens and a right-angle mirror. 4: The device of claim 3, wherein the circulating radiation and the Le-ray light each have an incident angle, the circulating optical system has an optical axis ' and wherein the right angle mirror is offset with respect to the optical axis Therefore, the angle of incidence of the cycle and the second radiant light is at least partially separated. 5. The device of claim 1, wherein the circulating optical system comprises a telecentric transducer and a diffraction grating. 6. The apparatus of claim 1, wherein the circulating optical system is sequentially included in the optical vehicle from the substrate: a cylindrical mirror; 48 1272149 a relay amplification group (IX); and a suitable for reflecting the reflection The radiant light is amplified by the transducer to return to the polarized light holding mirror of the substrate. 7. The apparatus of claim 6, wherein the repeater amplification kit comprises: first and second cylindrical lenses having the same focal length and separated by twice the focal length; and The aperture between the first and second cylindrical lenses. 8. The device of claim 1, wherein the circulating optical system 10 is adapted to direct the circulating radiant light to the substrate at or near an angle of incidence of the Brewster&apos;s angle. 9. A device for heat treating a region of a substrate, comprising: two or more continuous radiation sources each providing a continuous first round of light having a wavelength that can heat the substrate region; 15 two or more suitable Obtaining an optical system for forming an image on the substrate by obtaining the first radiant light and thereby forming the second radiant light, thereby forming two or more images on the substrate; and one is adapted to support the substrate, and The substrate is scanned relative to the two or more images such that each of the two or more radiation pulses heats the region to a stage sufficient to heat 20 the temperature of the region. 10. The device of claim 9, wherein the two or more optical systems are adapted to form the two or more images as line images. 11. A method for heat treating one or more regions of a substrate, the method comprising: 49 1272149 a. generating a continuous radiant light having a wavelength that can heat the one or more regions; b. using the continuous radiant light First radiating light to illuminate the substrate; c· capturing reflected radiation from one or more regions of the substrate and directing the reflective wheel to return light to the one or more regions as circulating radiant light; and d·in the The first radiant light and the circulated radiant light are scanned over the area or regions such that the one or more regions obtain a thermal energy that can treat the one or more regions. 12. The method of claim 2, wherein the circulating radiant light system is formed to have an incident angle corresponding to a minimum reflectivity of the substrate at the selected wavelength. 13. The method of claim 2, wherein directing the reflected radiation back to the one or more regions comprises reflecting 15 of the radiant light obtained by the right angle mirror. 14. The method of claim </ RTI> wherein the directing the reflected light to return to the one or more regions comprises reflecting radiation from a roof mirror and a cylindrical mirror. 15. The method of claim 1, wherein directing the reflected light beam* to return to the one or more regions comprises reflecting radiation from a diffraction grating that is oblique to the reflected radiation. The reflected wheel light that is directed back to the substrate remains focused in the one or more regions. 16. The method of claiming a mountain of haw, wherein directing the reflected light to return to the one or more regions comprises: 50 1272149 directing the reflected radiation through a cylindrical mirror and a repeater amplification group (IX) to A polarized light holds the ridge mirror, wherein the ridge mirror is adapted to reflect the reflected radiation back to the transducer amplification group to form a focused image on the substrate portion. 5 17. A method for heat treating a region of a substrate, comprising: generating two or more continuous first radiations having a wavelength that can heat the substrate region; and two or more of each are adapted to obtain the first radiation And forming an optical system in which the second radiation forms an image on the substrate to obtain the 10 or more consecutive first radiations, wherein the second radiation forms an image on the substrate, thereby Forming two or more at least partially overlapping images on the substrate; and scanning the substrate relative to the two or more images to cause each of two or more simultaneously occurring radiation pulses to heat the region to a temperature sufficient to heat treat the region 15 . 51