CA1213378A - Ballistic heterojunction bipolar transistors - Google Patents

Ballistic heterojunction bipolar transistors

Info

Publication number
CA1213378A
CA1213378A CA000436549A CA436549A CA1213378A CA 1213378 A CA1213378 A CA 1213378A CA 000436549 A CA000436549 A CA 000436549A CA 436549 A CA436549 A CA 436549A CA 1213378 A CA1213378 A CA 1213378A
Authority
CA
Canada
Prior art keywords
emitter
base
region
barrier
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000436549A
Other languages
English (en)
French (fr)
Inventor
David G. Ankri
Lester F. Eastman
Walter H. Ku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
France Telecom R&D SA
Original Assignee
France Telecom R&D SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom R&D SA filed Critical France Telecom R&D SA
Application granted granted Critical
Publication of CA1213378A publication Critical patent/CA1213378A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/881—Resonant tunnelling transistors

Landscapes

  • Bipolar Transistors (AREA)
CA000436549A 1982-09-17 1983-09-13 Ballistic heterojunction bipolar transistors Expired CA1213378A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41929382A 1982-09-17 1982-09-17
US419,293 1982-09-17

Publications (1)

Publication Number Publication Date
CA1213378A true CA1213378A (en) 1986-10-28

Family

ID=23661636

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000436549A Expired CA1213378A (en) 1982-09-17 1983-09-13 Ballistic heterojunction bipolar transistors

Country Status (5)

Country Link
EP (1) EP0106724B1 (enExample)
JP (1) JPS59210669A (enExample)
AU (1) AU562454B2 (enExample)
CA (1) CA1213378A (enExample)
DE (1) DE3380047D1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211267A (ja) * 1983-05-17 1984-11-30 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
DE3572752D1 (en) * 1984-09-21 1989-10-05 American Telephone & Telegraph A novel semiconductor device
US4866488A (en) * 1985-03-29 1989-09-12 Texas Instruments Incorporated Ballistic transport filter and device
JPS6216569A (ja) * 1985-07-16 1987-01-24 Matsushita Electric Ind Co Ltd ヘテロ接合トランジスタおよびその製造方法
JPS6218762A (ja) * 1985-07-18 1987-01-27 Matsushita Electric Ind Co Ltd ヘテロ接合トランジスタおよびその製造方法
JPS6221272A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd ヘテロ接合トランジスタの製造方法
JPS6247158A (ja) * 1985-08-26 1987-02-28 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249662A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249656A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249660A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249659A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249661A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249657A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS6249658A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPH0611056B2 (ja) * 1985-12-03 1994-02-09 富士通株式会社 高速半導体装置
JPS6348863A (ja) * 1986-08-19 1988-03-01 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタの製造方法
DE3751781T2 (de) * 1986-08-12 1996-10-17 Canon Kk Festkörper-Elektronenstrahlerzeuger
JPS6348862A (ja) * 1986-08-19 1988-03-01 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタの製造方法
US4929997A (en) * 1986-12-22 1990-05-29 Nec Corporation Heterojunction bipolar transistor with ballistic operation
JPS63188969A (ja) * 1987-01-30 1988-08-04 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタの製造方法
JPH0654780B2 (ja) * 1987-02-19 1994-07-20 松下電器産業株式会社 ヘテロ接合バイポーラトランジスタ
JPS63263761A (ja) * 1987-04-22 1988-10-31 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタの製造方法
JP2624253B2 (ja) * 1987-05-07 1997-06-25 松下電器産業株式会社 バイポーラトランジスタの製造方法
JPH0682678B2 (ja) * 1987-05-07 1994-10-19 松下電器産業株式会社 バイポーラトランジスタの製造方法
JPH0824127B2 (ja) * 1987-07-24 1996-03-06 松下電器産業株式会社 バイポ−ラトランジスタの製造方法
JPH0824124B2 (ja) * 1987-07-24 1996-03-06 松下電器産業株式会社 バイポ−ラトランジスタの製造方法
JPH0824125B2 (ja) * 1987-07-24 1996-03-06 松下電器産業株式会社 バイポ−ラトランジスタおよびその製造方法
JPH0824126B2 (ja) * 1987-07-24 1996-03-06 松下電器産業株式会社 バイポ−ラトランジスタおよびその製造方法
US4821082A (en) * 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
US5098853A (en) * 1988-11-02 1992-03-24 Hughes Aircraft Company Self-aligned, planar heterojunction bipolar transistor and method of forming the same
JP3299807B2 (ja) * 1993-04-07 2002-07-08 シャープ株式会社 ヘテロ接合バイポーラトランジスタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024592B2 (ja) * 1975-01-27 1985-06-13 株式会社日立製作所 ワイドギヤツプエミツタトランジスタの製造方法
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device

Also Published As

Publication number Publication date
AU1879183A (en) 1984-03-22
EP0106724A3 (en) 1986-02-12
AU562454B2 (en) 1987-06-11
JPH0586658B2 (enExample) 1993-12-13
EP0106724B1 (fr) 1989-06-07
JPS59210669A (ja) 1984-11-29
DE3380047D1 (en) 1989-07-13
EP0106724A2 (fr) 1984-04-25

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