ATE555479T1 - Dynamische direktzugriffsspeicheranordnung und verfahren zum selbstauffrischen von speicherzellen - Google Patents

Dynamische direktzugriffsspeicheranordnung und verfahren zum selbstauffrischen von speicherzellen

Info

Publication number
ATE555479T1
ATE555479T1 AT06790843T AT06790843T ATE555479T1 AT E555479 T1 ATE555479 T1 AT E555479T1 AT 06790843 T AT06790843 T AT 06790843T AT 06790843 T AT06790843 T AT 06790843T AT E555479 T1 ATE555479 T1 AT E555479T1
Authority
AT
Austria
Prior art keywords
self
refresh
signal
mode
refresh mode
Prior art date
Application number
AT06790843T
Other languages
German (de)
English (en)
Inventor
Hakjune Oh
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Application granted granted Critical
Publication of ATE555479T1 publication Critical patent/ATE555479T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
AT06790843T 2005-10-31 2006-10-12 Dynamische direktzugriffsspeicheranordnung und verfahren zum selbstauffrischen von speicherzellen ATE555479T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/261,493 US7369451B2 (en) 2005-10-31 2005-10-31 Dynamic random access memory device and method for self-refreshing memory cells
PCT/CA2006/001688 WO2007051285A1 (en) 2005-10-31 2006-10-12 Dynamic random access memory device and method for self-refreshing memory cells

Publications (1)

Publication Number Publication Date
ATE555479T1 true ATE555479T1 (de) 2012-05-15

Family

ID=37996029

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06790843T ATE555479T1 (de) 2005-10-31 2006-10-12 Dynamische direktzugriffsspeicheranordnung und verfahren zum selbstauffrischen von speicherzellen

Country Status (9)

Country Link
US (4) US7369451B2 (enExample)
EP (1) EP1943651B1 (enExample)
JP (1) JP5193050B2 (enExample)
KR (1) KR101319761B1 (enExample)
CN (1) CN101300641B (enExample)
AT (1) ATE555479T1 (enExample)
ES (1) ES2386368T3 (enExample)
TW (2) TWI457927B (enExample)
WO (1) WO2007051285A1 (enExample)

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US8272781B2 (en) * 2006-08-01 2012-09-25 Intel Corporation Dynamic power control of a memory device thermal sensor
KR100834403B1 (ko) * 2007-01-03 2008-06-04 주식회사 하이닉스반도체 안정적인 셀프리프레쉬 동작을 수행하는 메모리장치 및셀프리프레쉬주기 제어신호 생성방법
JP5583319B2 (ja) * 2007-10-31 2014-09-03 マイクロン テクノロジー， インク． 半導体記憶装置及びその制御方法
KR101020284B1 (ko) 2008-12-05 2011-03-07 주식회사 하이닉스반도체 초기화회로 및 이를 이용한 뱅크액티브회로
KR101096258B1 (ko) * 2009-08-28 2011-12-22 주식회사 하이닉스반도체 플래그신호 생성회로 및 반도체 장치
US9292426B2 (en) * 2010-09-24 2016-03-22 Intel Corporation Fast exit from DRAM self-refresh
CN102064816A (zh) * 2010-11-11 2011-05-18 苏州合欣美电子科技有限公司 一种生态屋的负压信号生成电路
US9691504B2 (en) 2011-10-24 2017-06-27 Rambus Inc. DRAM retention test method for dynamic error correction
JP5728370B2 (ja) * 2011-11-21 2015-06-03 株式会社東芝 半導体記憶装置およびその駆動方法
US8605489B2 (en) * 2011-11-30 2013-12-10 International Business Machines Corporation Enhanced data retention mode for dynamic memories
CN103369643B (zh) * 2012-04-10 2018-01-23 中兴通讯股份有限公司 移动终端降低系统功耗的方法和装置
US9171605B1 (en) 2012-12-21 2015-10-27 Samsung Electronics Co., Ltd. Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the same
CN104143355B (zh) * 2013-05-09 2018-01-23 华为技术有限公司 一种刷新动态随机存取存储器的方法和装置
US9513693B2 (en) * 2014-03-25 2016-12-06 Apple Inc. L2 cache retention mode
EP3279899B1 (en) 2015-05-04 2020-10-07 Huawei Technologies Co. Ltd. Dram refreshing method, apparatus and system
US10331526B2 (en) * 2015-07-31 2019-06-25 Qualcomm Incorporated Systems, methods, and apparatus for frequency reset of a memory
KR20170030305A (ko) 2015-09-09 2017-03-17 삼성전자주식회사 메모리 장치의 리프레쉬 방법
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
US10672449B2 (en) * 2017-10-20 2020-06-02 Micron Technology, Inc. Apparatus and methods for refreshing memory
US10170174B1 (en) * 2017-10-27 2019-01-01 Micron Technology, Inc. Apparatus and methods for refreshing memory
US10622052B2 (en) 2018-09-04 2020-04-14 Micron Technology, Inc. Reduced peak self-refresh current in a memory device
FR3094830A1 (fr) * 2019-04-08 2020-10-09 Proton World International N.V. Circuit d'alimentation d'une mémoire volatile
CN114333942B (zh) * 2020-10-12 2025-04-22 华邦电子股份有限公司 虚拟静态随机存取存储器装置
CN112612596B (zh) * 2020-12-30 2022-07-08 海光信息技术股份有限公司 命令调度方法、装置、设备和存储介质
US12154611B2 (en) 2022-02-10 2024-11-26 Micron Technology, Inc. Apparatuses and methods for sample rate adjustment

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JP4216457B2 (ja) * 2000-11-30 2009-01-28 富士通マイクロエレクトロニクス株式会社 半導体記憶装置及び半導体装置
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JP4211922B2 (ja) * 2003-06-13 2009-01-21 パナソニック株式会社 半導体装置
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US7369451B2 (en) * 2005-10-31 2008-05-06 Mosaid Technologies Incorporated Dynamic random access memory device and method for self-refreshing memory cells
US7286377B1 (en) * 2006-04-28 2007-10-23 Mosaid Technologies Incorporated Dynamic random access memory device and method for self-refreshing memory cells with temperature compensated self-refresh

Also Published As

Publication number Publication date
US20110103169A1 (en) 2011-05-05
ES2386368T3 (es) 2012-08-17
JP2009514128A (ja) 2009-04-02
TW200733108A (en) 2007-09-01
TW201511000A (zh) 2015-03-16
EP1943651B1 (en) 2012-04-25
CN101300641A (zh) 2008-11-05
JP5193050B2 (ja) 2013-05-08
US7768859B2 (en) 2010-08-03
KR101319761B1 (ko) 2013-10-17
US20090303824A1 (en) 2009-12-10
EP1943651A1 (en) 2008-07-16
TWI457927B (zh) 2014-10-21
WO2007051285A1 (en) 2007-05-10
EP1943651A4 (en) 2009-08-26
US20080144418A1 (en) 2008-06-19
US8374047B2 (en) 2013-02-12
US7907464B2 (en) 2011-03-15
US7369451B2 (en) 2008-05-06
KR20080063520A (ko) 2008-07-04
CN101300641B (zh) 2011-05-11
US20070097677A1 (en) 2007-05-03

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