JP5193050B2 - セルフリフレッシュ・メモリセルのためのダイナミックランダムアクセスメモリデバイスおよび方法 - Google Patents

セルフリフレッシュ・メモリセルのためのダイナミックランダムアクセスメモリデバイスおよび方法 Download PDF

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Publication number
JP5193050B2
JP5193050B2 JP2008536889A JP2008536889A JP5193050B2 JP 5193050 B2 JP5193050 B2 JP 5193050B2 JP 2008536889 A JP2008536889 A JP 2008536889A JP 2008536889 A JP2008536889 A JP 2008536889A JP 5193050 B2 JP5193050 B2 JP 5193050B2
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Japan
Prior art keywords
self
signal
refresh
refresh mode
oscillation
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Expired - Fee Related
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JP2008536889A
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English (en)
Japanese (ja)
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JP2009514128A (ja
JP2009514128A5 (enExample
Inventor
ハクジュン・オ
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Mosaid Technologies Inc
Original Assignee
Conversant Intellectual Property Management Inc
Mosaid Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2008536889A 2005-10-31 2006-10-12 セルフリフレッシュ・メモリセルのためのダイナミックランダムアクセスメモリデバイスおよび方法 Expired - Fee Related JP5193050B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/261,493 US7369451B2 (en) 2005-10-31 2005-10-31 Dynamic random access memory device and method for self-refreshing memory cells
US11/261,493 2005-10-31
PCT/CA2006/001688 WO2007051285A1 (en) 2005-10-31 2006-10-12 Dynamic random access memory device and method for self-refreshing memory cells

Publications (3)

Publication Number Publication Date
JP2009514128A JP2009514128A (ja) 2009-04-02
JP2009514128A5 JP2009514128A5 (enExample) 2009-08-27
JP5193050B2 true JP5193050B2 (ja) 2013-05-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008536889A Expired - Fee Related JP5193050B2 (ja) 2005-10-31 2006-10-12 セルフリフレッシュ・メモリセルのためのダイナミックランダムアクセスメモリデバイスおよび方法

Country Status (9)

Country Link
US (4) US7369451B2 (enExample)
EP (1) EP1943651B1 (enExample)
JP (1) JP5193050B2 (enExample)
KR (1) KR101319761B1 (enExample)
CN (1) CN101300641B (enExample)
AT (1) ATE555479T1 (enExample)
ES (1) ES2386368T3 (enExample)
TW (2) TWI457927B (enExample)
WO (1) WO2007051285A1 (enExample)

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US7369451B2 (en) * 2005-10-31 2008-05-06 Mosaid Technologies Incorporated Dynamic random access memory device and method for self-refreshing memory cells
US8272781B2 (en) * 2006-08-01 2012-09-25 Intel Corporation Dynamic power control of a memory device thermal sensor
KR100834403B1 (ko) * 2007-01-03 2008-06-04 주식회사 하이닉스반도체 안정적인 셀프리프레쉬 동작을 수행하는 메모리장치 및셀프리프레쉬주기 제어신호 생성방법
JP5583319B2 (ja) * 2007-10-31 2014-09-03 マイクロン テクノロジー， インク． 半導体記憶装置及びその制御方法
KR101020284B1 (ko) 2008-12-05 2011-03-07 주식회사 하이닉스반도체 초기화회로 및 이를 이용한 뱅크액티브회로
KR101096258B1 (ko) * 2009-08-28 2011-12-22 주식회사 하이닉스반도체 플래그신호 생성회로 및 반도체 장치
US9292426B2 (en) * 2010-09-24 2016-03-22 Intel Corporation Fast exit from DRAM self-refresh
CN102064816A (zh) * 2010-11-11 2011-05-18 苏州合欣美电子科技有限公司 一种生态屋的负压信号生成电路
US9691504B2 (en) 2011-10-24 2017-06-27 Rambus Inc. DRAM retention test method for dynamic error correction
JP5728370B2 (ja) * 2011-11-21 2015-06-03 株式会社東芝 半導体記憶装置およびその駆動方法
US8605489B2 (en) * 2011-11-30 2013-12-10 International Business Machines Corporation Enhanced data retention mode for dynamic memories
CN103369643B (zh) * 2012-04-10 2018-01-23 中兴通讯股份有限公司 移动终端降低系统功耗的方法和装置
US9171605B1 (en) 2012-12-21 2015-10-27 Samsung Electronics Co., Ltd. Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the same
CN104143355B (zh) * 2013-05-09 2018-01-23 华为技术有限公司 一种刷新动态随机存取存储器的方法和装置
US9513693B2 (en) * 2014-03-25 2016-12-06 Apple Inc. L2 cache retention mode
EP3279899B1 (en) 2015-05-04 2020-10-07 Huawei Technologies Co. Ltd. Dram refreshing method, apparatus and system
US10331526B2 (en) * 2015-07-31 2019-06-25 Qualcomm Incorporated Systems, methods, and apparatus for frequency reset of a memory
KR20170030305A (ko) 2015-09-09 2017-03-17 삼성전자주식회사 메모리 장치의 리프레쉬 방법
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
US10672449B2 (en) * 2017-10-20 2020-06-02 Micron Technology, Inc. Apparatus and methods for refreshing memory
US10170174B1 (en) * 2017-10-27 2019-01-01 Micron Technology, Inc. Apparatus and methods for refreshing memory
US10622052B2 (en) 2018-09-04 2020-04-14 Micron Technology, Inc. Reduced peak self-refresh current in a memory device
FR3094830A1 (fr) * 2019-04-08 2020-10-09 Proton World International N.V. Circuit d'alimentation d'une mémoire volatile
CN114333942B (zh) * 2020-10-12 2025-04-22 华邦电子股份有限公司 虚拟静态随机存取存储器装置
CN112612596B (zh) * 2020-12-30 2022-07-08 海光信息技术股份有限公司 命令调度方法、装置、设备和存储介质
US12154611B2 (en) 2022-02-10 2024-11-26 Micron Technology, Inc. Apparatuses and methods for sample rate adjustment

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JPS58155596A (ja) * 1982-03-10 1983-09-16 Hitachi Ltd ダイナミツク型ｍｏｓｒａｍ
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JPH07262772A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd シンクロナスｄｒａｍ
JP2606669B2 (ja) * 1994-09-22 1997-05-07 日本電気株式会社 半導体記憶装置
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JPH1139862A (ja) * 1997-07-16 1999-02-12 Mitsubishi Electric Corp 半導体記憶装置
KR100363105B1 (ko) * 1998-12-23 2003-02-19 주식회사 하이닉스반도체 셀 리키지 커런트 보상용 셀프 리프레쉬 장치
JP4216457B2 (ja) * 2000-11-30 2009-01-28 富士通マイクロエレクトロニクス株式会社 半導体記憶装置及び半導体装置
US6741515B2 (en) * 2002-06-18 2004-05-25 Nanoamp Solutions, Inc. DRAM with total self refresh and control circuit
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KR100502659B1 (ko) * 2002-10-31 2005-07-22 주식회사 하이닉스반도체 저전력 셀프 리프레쉬 장치를 구비한 반도체 메모리 장치
JP4211922B2 (ja) * 2003-06-13 2009-01-21 パナソニック株式会社 半導体装置
JP2005025903A (ja) * 2003-07-01 2005-01-27 Nec Micro Systems Ltd 半導体記憶装置
US7369451B2 (en) * 2005-10-31 2008-05-06 Mosaid Technologies Incorporated Dynamic random access memory device and method for self-refreshing memory cells
US7286377B1 (en) * 2006-04-28 2007-10-23 Mosaid Technologies Incorporated Dynamic random access memory device and method for self-refreshing memory cells with temperature compensated self-refresh

Also Published As

Publication number Publication date
US20110103169A1 (en) 2011-05-05
ES2386368T3 (es) 2012-08-17
JP2009514128A (ja) 2009-04-02
TW200733108A (en) 2007-09-01
TW201511000A (zh) 2015-03-16
EP1943651B1 (en) 2012-04-25
CN101300641A (zh) 2008-11-05
US7768859B2 (en) 2010-08-03
KR101319761B1 (ko) 2013-10-17
US20090303824A1 (en) 2009-12-10
EP1943651A1 (en) 2008-07-16
TWI457927B (zh) 2014-10-21
WO2007051285A1 (en) 2007-05-10
EP1943651A4 (en) 2009-08-26
US20080144418A1 (en) 2008-06-19
US8374047B2 (en) 2013-02-12
US7907464B2 (en) 2011-03-15
US7369451B2 (en) 2008-05-06
KR20080063520A (ko) 2008-07-04
CN101300641B (zh) 2011-05-11
ATE555479T1 (de) 2012-05-15
US20070097677A1 (en) 2007-05-03

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