ATE544175T1 - Transferverfahren einer dünnschicht auf ein zielsubstrat, das einen anderen wärmedehnungskoeffizienten besitzt als die dünnschicht - Google Patents

Transferverfahren einer dünnschicht auf ein zielsubstrat, das einen anderen wärmedehnungskoeffizienten besitzt als die dünnschicht

Info

Publication number
ATE544175T1
ATE544175T1 AT10162051T AT10162051T ATE544175T1 AT E544175 T1 ATE544175 T1 AT E544175T1 AT 10162051 T AT10162051 T AT 10162051T AT 10162051 T AT10162051 T AT 10162051T AT E544175 T1 ATE544175 T1 AT E544175T1
Authority
AT
Austria
Prior art keywords
thin film
layer
layers
target substrate
thermal expansion
Prior art date
Application number
AT10162051T
Other languages
English (en)
Inventor
Franck Fournel
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE544175T1 publication Critical patent/ATE544175T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT10162051T 2009-06-18 2010-05-05 Transferverfahren einer dünnschicht auf ein zielsubstrat, das einen anderen wärmedehnungskoeffizienten besitzt als die dünnschicht ATE544175T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0954126A FR2947098A1 (fr) 2009-06-18 2009-06-18 Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince

Publications (1)

Publication Number Publication Date
ATE544175T1 true ATE544175T1 (de) 2012-02-15

Family

ID=41664786

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10162051T ATE544175T1 (de) 2009-06-18 2010-05-05 Transferverfahren einer dünnschicht auf ein zielsubstrat, das einen anderen wärmedehnungskoeffizienten besitzt als die dünnschicht

Country Status (5)

Country Link
US (1) US8252663B2 (de)
EP (1) EP2264742B1 (de)
JP (1) JP5587041B2 (de)
AT (1) ATE544175T1 (de)
FR (1) FR2947098A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2961948B1 (fr) * 2010-06-23 2012-08-03 Soitec Silicon On Insulator Procede de traitement d'une piece en materiau compose
KR101922118B1 (ko) 2012-08-27 2018-11-26 삼성전자주식회사 플렉서블 반도체소자 및 그 제조방법
WO2014057748A1 (ja) * 2012-10-12 2014-04-17 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法
FR3079346B1 (fr) * 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique

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EP2264742B1 (de) 2012-02-01
US8252663B2 (en) 2012-08-28
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FR2947098A1 (fr) 2010-12-24
JP2011003893A (ja) 2011-01-06
JP5587041B2 (ja) 2014-09-10

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