FR2847076B1 - Procede de detachement d'une couche mince a temperature moderee apres co-implantation - Google Patents

Procede de detachement d'une couche mince a temperature moderee apres co-implantation

Info

Publication number
FR2847076B1
FR2847076B1 FR0213935A FR0213935A FR2847076B1 FR 2847076 B1 FR2847076 B1 FR 2847076B1 FR 0213935 A FR0213935 A FR 0213935A FR 0213935 A FR0213935 A FR 0213935A FR 2847076 B1 FR2847076 B1 FR 2847076B1
Authority
FR
France
Prior art keywords
detaching
implantation
thin layer
moderate temperature
moderate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0213935A
Other languages
English (en)
Other versions
FR2847076A1 (fr
Inventor
Ian Cayrefourcq
Mohamed Nadia Ben
Blanchard Christelle Lagahe
Nguyet Phuong Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0213935A priority Critical patent/FR2847076B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Soitec SA filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/EP2003/013148 priority patent/WO2004042779A2/fr
Priority to AU2003298137A priority patent/AU2003298137A1/en
Priority to JP2004549162A priority patent/JP4999272B2/ja
Priority to KR1020057008067A priority patent/KR101122859B1/ko
Priority to CN2003801023000A priority patent/CN1708843B/zh
Priority to EP03795839.4A priority patent/EP1559139B1/fr
Priority to TW092130723A priority patent/TWI294663B/zh
Publication of FR2847076A1 publication Critical patent/FR2847076A1/fr
Application granted granted Critical
Publication of FR2847076B1 publication Critical patent/FR2847076B1/fr
Priority to JP2011242033A priority patent/JP2012084897A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
FR0213935A 2002-11-07 2002-11-07 Procede de detachement d'une couche mince a temperature moderee apres co-implantation Expired - Fee Related FR2847076B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0213935A FR2847076B1 (fr) 2002-11-07 2002-11-07 Procede de detachement d'une couche mince a temperature moderee apres co-implantation
AU2003298137A AU2003298137A1 (en) 2002-11-07 2003-10-30 Method of detaching a thin film at moderate temperature after co-implantation
JP2004549162A JP4999272B2 (ja) 2002-11-07 2003-10-30 共注入後に中温で薄膜を分離する方法
KR1020057008067A KR101122859B1 (ko) 2002-11-07 2003-10-30 공동?주입후 온화한 온도에서 박막의 박리 방법
PCT/EP2003/013148 WO2004042779A2 (fr) 2002-11-07 2003-10-30 Procede de separation d'une couche mince a une temperature moyenne apres implantation conjointe
CN2003801023000A CN1708843B (zh) 2002-11-07 2003-10-30 在共注入后在中等温度下分离薄膜的方法
EP03795839.4A EP1559139B1 (fr) 2002-11-07 2003-10-30 Procede de separation d'une couche mince a une temperature moyenne apres implantation conjointe
TW092130723A TWI294663B (en) 2002-11-07 2003-11-04 Method of detaching a thin film at moderate temperature after co-implantation
JP2011242033A JP2012084897A (ja) 2002-11-07 2011-11-04 共注入後に中温で薄膜を分離する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0213935A FR2847076B1 (fr) 2002-11-07 2002-11-07 Procede de detachement d'une couche mince a temperature moderee apres co-implantation

Publications (2)

Publication Number Publication Date
FR2847076A1 FR2847076A1 (fr) 2004-05-14
FR2847076B1 true FR2847076B1 (fr) 2005-02-18

Family

ID=32116442

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0213935A Expired - Fee Related FR2847076B1 (fr) 2002-11-07 2002-11-07 Procede de detachement d'une couche mince a temperature moderee apres co-implantation

Country Status (8)

Country Link
EP (1) EP1559139B1 (fr)
JP (2) JP4999272B2 (fr)
KR (1) KR101122859B1 (fr)
CN (1) CN1708843B (fr)
AU (1) AU2003298137A1 (fr)
FR (1) FR2847076B1 (fr)
TW (1) TWI294663B (fr)
WO (1) WO2004042779A2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
EP1605504B1 (fr) 2004-06-10 2011-05-25 S.O.I. Tec Silicon on Insulator Technologies S.A. Procédé pour la fabrication d'une tranche SOI
CN100527416C (zh) * 2004-08-18 2009-08-12 康宁股份有限公司 应变绝缘体上半导体结构以及应变绝缘体上半导体结构的制造方法
JP5101287B2 (ja) * 2004-09-21 2012-12-19 ソイテック 接合されるべき面の処理を伴う転写方法
CN101027768B (zh) * 2004-09-21 2010-11-03 S.O.I.Tec绝缘体上硅技术公司 根据避免气泡形成和限制粗糙度的条件来进行共注入步骤的薄层转移方法
WO2006037783A1 (fr) * 2004-10-04 2006-04-13 S.O.I.Tec Silicon On Insulator Technologies Procédé de transfert d'une couche mince comprenant une perturbation controlée d'une structure cristalline
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2907966B1 (fr) 2006-10-27 2009-01-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat.
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
KR100873299B1 (ko) 2007-08-20 2008-12-11 주식회사 실트론 Ｓｓｏｉ 기판의 제조방법
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
FR2949606B1 (fr) * 2009-08-26 2011-10-28 Commissariat Energie Atomique Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation
FR2974944B1 (fr) * 2011-05-02 2013-06-14 Commissariat Energie Atomique Procédé de formation d'une fracture dans un matériau
KR101219358B1 (ko) * 2011-07-26 2013-01-21 삼성코닝정밀소재 주식회사 기판 분리 방법 및 이를 이용한 접합기판 제조방법
FR3045677B1 (fr) 2015-12-22 2019-07-19 Soitec Procede de fabrication d'une couche monocristalline, notamment piezoelectrique
FR3045678B1 (fr) 2015-12-22 2017-12-22 Soitec Silicon On Insulator Procede de fabrication d'une couche piezoelectrique monocristalline et dispositif microelectronique, photonique ou optique comprenant une telle couche
JP6563360B2 (ja) * 2016-04-05 2019-08-21 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
CN106222754A (zh) * 2016-07-29 2016-12-14 成都立威讯科技有限公司 一种工艺精湛的蓝宝石分离方法
DE102016118268A1 (de) 2016-09-27 2018-03-29 Infineon Technologies Ag Verfahren zum Bearbeiten eines einkristallinen Substrats und mikromechanische Struktur

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
US5877070A (en) 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
JP3412470B2 (ja) * 1997-09-04 2003-06-03 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
JPH11307747A (ja) * 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
US6600173B2 (en) * 2000-08-30 2003-07-29 Cornell Research Foundation, Inc. Low temperature semiconductor layering and three-dimensional electronic circuits using the layering

Also Published As

Publication number Publication date
EP1559139B1 (fr) 2013-05-29
TWI294663B (en) 2008-03-11
CN1708843A (zh) 2005-12-14
JP4999272B2 (ja) 2012-08-15
TW200423295A (en) 2004-11-01
WO2004042779A2 (fr) 2004-05-21
FR2847076A1 (fr) 2004-05-14
JP2012084897A (ja) 2012-04-26
KR20050060111A (ko) 2005-06-21
EP1559139A2 (fr) 2005-08-03
AU2003298137A1 (en) 2004-06-07
JP2006505928A (ja) 2006-02-16
AU2003298137A8 (en) 2004-06-07
KR101122859B1 (ko) 2012-03-21
CN1708843B (zh) 2010-08-18
WO2004042779A3 (fr) 2004-09-23

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Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

Owner name: COMMISSARIAT A L ENERGIE ATOMIQUE, FR

Effective date: 20120423

ST Notification of lapse

Effective date: 20160729