ATE489658T1 - Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur - Google Patents

Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur

Info

Publication number
ATE489658T1
ATE489658T1 AT03738519T AT03738519T ATE489658T1 AT E489658 T1 ATE489658 T1 AT E489658T1 AT 03738519 T AT03738519 T AT 03738519T AT 03738519 T AT03738519 T AT 03738519T AT E489658 T1 ATE489658 T1 AT E489658T1
Authority
AT
Austria
Prior art keywords
reflective coating
photoresist film
composition
forming
film
Prior art date
Application number
AT03738519T
Other languages
English (en)
Inventor
Yasushi Akiyama
Yusuke Takano
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Application granted granted Critical
Publication of ATE489658T1 publication Critical patent/ATE489658T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT03738519T 2002-07-04 2003-06-26 Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur ATE489658T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002195582A JP3851594B2 (ja) 2002-07-04 2002-07-04 反射防止コーティング用組成物およびパターン形成方法
PCT/JP2003/008087 WO2004006023A1 (ja) 2002-07-04 2003-06-26 反射防止コーティング用組成物およびパターン形成方法

Publications (1)

Publication Number Publication Date
ATE489658T1 true ATE489658T1 (de) 2010-12-15

Family

ID=30112343

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03738519T ATE489658T1 (de) 2002-07-04 2003-06-26 Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur

Country Status (10)

Country Link
US (1) US7365115B2 (de)
EP (1) EP1542078B1 (de)
JP (1) JP3851594B2 (de)
KR (1) KR100932086B1 (de)
CN (1) CN100476598C (de)
AT (1) ATE489658T1 (de)
DE (1) DE60335120D1 (de)
MY (1) MY138228A (de)
TW (1) TWI326013B (de)
WO (1) WO2004006023A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004067655A1 (ja) * 2003-01-29 2006-05-18 旭硝子株式会社 コーティング組成物、反射防止膜、フォトレジストおよびそれを用いたパターン形成方法
US7508132B2 (en) * 2003-10-20 2009-03-24 Hewlett-Packard Development Company, L.P. Device having a getter structure and a photomask
US20070196763A1 (en) * 2003-11-19 2007-08-23 Daikin Industries, Ltd. Method of forming laminated resist
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP2006039129A (ja) * 2004-07-26 2006-02-09 Sony Corp 液浸露光用積層構造、液浸露光方法、電子装置の製造方法及び電子装置
JP4322205B2 (ja) * 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
US7288362B2 (en) 2005-02-23 2007-10-30 International Business Machines Corporation Immersion topcoat materials with improved performance
JP4482760B2 (ja) * 2005-04-26 2010-06-16 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
JP4913750B2 (ja) * 2005-11-21 2012-04-11 富士フイルム株式会社 感光性転写材料、隔壁及びその形成方法、光学素子及びその製造方法、並びに表示装置
JP2008112779A (ja) * 2006-10-30 2008-05-15 Az Electronic Materials Kk 反射防止膜形成用組成物およびそれを用いたパターン形成方法
JP4727567B2 (ja) * 2006-12-27 2011-07-20 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜形成用組成物およびそれを用いたパターン形成方法
WO2008102820A1 (ja) * 2007-02-22 2008-08-28 Asahi Glass Company, Limited 反射防止コーティング用組成物
KR100886314B1 (ko) * 2007-06-25 2009-03-04 금호석유화학 주식회사 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물
JP4723557B2 (ja) 2007-12-14 2011-07-13 Ａｚエレクトロニックマテリアルズ株式会社 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法
JP5697523B2 (ja) * 2011-04-12 2015-04-08 メルクパフォーマンスマテリアルズＩｐ合同会社 上面反射防止膜形成用組成物およびそれを用いたパターン形成方法
CN103137441A (zh) * 2011-11-22 2013-06-05 上海华虹Nec电子有限公司 半导体工艺中制作细长型孤立线条图形的方法
WO2014134594A1 (en) * 2013-03-01 2014-09-04 Board Of Trustees Of The University Of Arkansas Antireflective coating for glass applications and method of forming same
JP6848547B2 (ja) * 2016-04-22 2021-03-24 Ａｇｃ株式会社 コーティング用組成物およびフォトレジスト積層体の製造方法
CN110128904A (zh) * 2019-05-10 2019-08-16 甘肃华隆芯材料科技有限公司 一种用于光刻的上表面抗反射涂层组合物
CN110045443A (zh) * 2019-05-10 2019-07-23 甘肃华隆芯材料科技有限公司 一种用于上表面抗反射膜的组合物
CN113913060B (zh) * 2021-10-19 2022-05-03 苏州润邦半导体材料科技有限公司 一种顶部抗反射涂层组合物
CN114035405B (zh) * 2022-01-07 2022-04-22 甘肃华隆芯材料科技有限公司 制备顶部抗反射膜的组合物、顶部抗反射膜和含氟组合物
CN116875159B (zh) * 2023-09-05 2023-11-21 甘肃华隆芯材料科技有限公司 顶部抗反射涂层材料及其制备方法和应用

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038821A (ja) 1983-08-12 1985-02-28 Hitachi Ltd エッチング方法
JPS60263141A (ja) * 1984-06-12 1985-12-26 Fuji Photo Film Co Ltd 光重合性感光材料
JPS6215543A (ja) * 1985-07-15 1987-01-23 Konishiroku Photo Ind Co Ltd 写真感光材料
JPH0799730B2 (ja) 1985-09-13 1995-10-25 株式会社日立製作所 パターン形成方法
JPS6262520A (ja) 1985-09-13 1987-03-19 Hitachi Ltd パタ−ン形成方法
AU611106B2 (en) * 1987-10-24 1991-06-06 Ito Optical Industrial Co. Ltd. Optical antireflection treatment
DE3817012A1 (de) * 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
DE68926019T2 (de) 1988-10-28 1996-10-02 Ibm Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
DE69027799T2 (de) * 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
US5216135A (en) * 1990-01-30 1993-06-01 Wako Pure Chemical Industries, Ltd. Diazodisulfones
JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JPH0574700A (ja) 1991-07-17 1993-03-26 Asahi Glass Co Ltd パターン形成方法
JPH0588598A (ja) 1991-09-30 1993-04-09 Toppan Printing Co Ltd ホログラム複製用多面付け原版の製造方法
JP3281053B2 (ja) * 1991-12-09 2002-05-13 株式会社東芝 パターン形成方法
DE69323812T2 (de) * 1992-08-14 1999-08-26 Japan Synthetic Rubber Co. Reflexionsverhindernder Film und Verfahren zur Herstellung von Resistmustern
JPH06118630A (ja) 1992-10-06 1994-04-28 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジスト用塗布液組成物
JP3192505B2 (ja) 1992-11-13 2001-07-30 東京応化工業株式会社 半導体素子製造用パターン形成方法
SG52630A1 (en) * 1993-10-12 1998-09-28 Hoechst Ag Top anti-reflective coating films
JP3344063B2 (ja) * 1994-02-24 2002-11-11 ジェイエスアール株式会社 塩基遮断性反射防止膜およびレジストパターンの形成方法
US5631314A (en) * 1994-04-27 1997-05-20 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition
JP3491978B2 (ja) * 1994-08-01 2004-02-03 シップレーカンパニー エル エル シー 表面反射防止塗布組成物
US5611850A (en) * 1995-03-23 1997-03-18 Mitsubishi Chemical Corporation Composition for anti-reflective coating on resist
JP3510003B2 (ja) 1995-05-01 2004-03-22 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
JPH0950129A (ja) * 1995-05-30 1997-02-18 Shin Etsu Chem Co Ltd 反射防止膜材料及びパターン形成方法
JPH0990615A (ja) * 1995-09-27 1997-04-04 Shin Etsu Chem Co Ltd 反射防止膜材料及びパターン形成方法
JPH09236915A (ja) * 1995-12-27 1997-09-09 Mitsubishi Chem Corp 反射防止組成物及びレジストパターン形成方法
TW337591B (en) * 1996-04-15 1998-08-01 Shinetsu Chem Ind Co Anti-reflection coating material
JP3031287B2 (ja) * 1997-04-30 2000-04-10 日本電気株式会社 反射防止膜材料
JP3965740B2 (ja) * 1997-10-24 2007-08-29 旭硝子株式会社 コーティング組成物
JP3673399B2 (ja) * 1998-06-03 2005-07-20 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
CN1145194C (zh) * 1998-11-20 2004-04-07 克拉瑞特金融(Bvi)有限公司 光致抗蚀图形的形成方法
JP3801398B2 (ja) * 1999-11-01 2006-07-26 信越化学工業株式会社 反射防止膜材料及びパターン形成方法
JP2001142221A (ja) * 1999-11-10 2001-05-25 Clariant (Japan) Kk 反射防止コーティング用組成物
JP4270763B2 (ja) 2001-02-02 2009-06-03 株式会社東芝 ガスタービン制御装置
US7217491B2 (en) * 2002-06-07 2007-05-15 Battelle Memorial Institute Antireflective coatings

Also Published As

Publication number Publication date
EP1542078B1 (de) 2010-11-24
US7365115B2 (en) 2008-04-29
DE60335120D1 (de) 2011-01-05
KR20050075328A (ko) 2005-07-20
KR100932086B1 (ko) 2009-12-16
EP1542078A1 (de) 2005-06-15
EP1542078A4 (de) 2009-11-11
JP3851594B2 (ja) 2006-11-29
CN1666154A (zh) 2005-09-07
MY138228A (en) 2009-05-29
WO2004006023A1 (ja) 2004-01-15
CN100476598C (zh) 2009-04-08
TW200403315A (en) 2004-03-01
JP2004037887A (ja) 2004-02-05
TWI326013B (en) 2010-06-11
US20050239932A1 (en) 2005-10-27

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