ATE449424T1 - Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche - Google Patents
Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherflächeInfo
- Publication number
- ATE449424T1 ATE449424T1 AT03709915T AT03709915T ATE449424T1 AT E449424 T1 ATE449424 T1 AT E449424T1 AT 03709915 T AT03709915 T AT 03709915T AT 03709915 T AT03709915 T AT 03709915T AT E449424 T1 ATE449424 T1 AT E449424T1
- Authority
- AT
- Austria
- Prior art keywords
- gate
- transistor
- zone
- memory cell
- active
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000002356 single layer Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0204690A FR2838563B1 (fr) | 2002-04-15 | 2002-04-15 | Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille |
FR0209454A FR2838554B1 (fr) | 2002-04-15 | 2002-07-25 | Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant |
PCT/FR2003/000311 WO2003088366A1 (fr) | 2002-04-15 | 2003-01-31 | Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE449424T1 true ATE449424T1 (de) | 2009-12-15 |
Family
ID=28676465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03709915T ATE449424T1 (de) | 2002-04-15 | 2003-01-31 | Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche |
Country Status (7)
Country | Link |
---|---|
US (1) | US7333362B2 (de) |
EP (1) | EP1495496B1 (de) |
JP (1) | JP4662529B2 (de) |
AT (1) | ATE449424T1 (de) |
DE (1) | DE60330130D1 (de) |
FR (1) | FR2838554B1 (de) |
WO (1) | WO2003088366A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI231039B (en) * | 2004-04-30 | 2005-04-11 | Yield Microelectronics Corp | Non-volatile memory and its operational method |
GB0415995D0 (en) * | 2004-07-16 | 2004-08-18 | Song Aimin | Memory array |
JP4881552B2 (ja) * | 2004-09-09 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2006202834A (ja) * | 2005-01-18 | 2006-08-03 | Seiko Epson Corp | 半導体記憶装置および半導体記憶装置の製造方法 |
US7402874B2 (en) * | 2005-04-29 | 2008-07-22 | Texas Instruments Incorporated | One time programmable EPROM fabrication in STI CMOS technology |
JP2006344735A (ja) * | 2005-06-08 | 2006-12-21 | Seiko Epson Corp | 半導体装置 |
FR2891398A1 (fr) * | 2005-09-23 | 2007-03-30 | St Microelectronics Sa | Memoire non volatile reprogrammable |
JP2007149947A (ja) * | 2005-11-28 | 2007-06-14 | Nec Electronics Corp | 不揮発性メモリセル及びeeprom |
JP4435095B2 (ja) * | 2006-01-04 | 2010-03-17 | 株式会社東芝 | 半導体システム |
US20070247915A1 (en) * | 2006-04-21 | 2007-10-25 | Intersil Americas Inc. | Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide |
US7759727B2 (en) * | 2006-08-21 | 2010-07-20 | Intersil Americas Inc. | Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology |
JP4282705B2 (ja) * | 2006-09-28 | 2009-06-24 | 株式会社東芝 | エージングデバイス及びその製造方法 |
ES2322418B1 (es) * | 2006-10-02 | 2010-03-22 | Universidad De Almeria | Sistema de coexpresion enzimatica para la produccion de d-aminoacidos. |
US7663173B1 (en) * | 2007-01-12 | 2010-02-16 | National Semiconductor Corporation | Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage |
US7808034B1 (en) * | 2007-01-12 | 2010-10-05 | National Semiconductor Corporation | Non-volatile memory cell with fully isolated substrate as charge storage |
US7903465B2 (en) * | 2007-04-24 | 2011-03-08 | Intersil Americas Inc. | Memory array of floating gate-based non-volatile memory cells |
US7688627B2 (en) * | 2007-04-24 | 2010-03-30 | Intersil Americas Inc. | Flash memory array of floating gate-based non-volatile memory cells |
US8339862B2 (en) * | 2007-12-25 | 2012-12-25 | Genusion, Inc. | Nonvolatile semiconductor memory device |
US8390052B2 (en) * | 2008-04-02 | 2013-03-05 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor memory device |
TWI416713B (zh) * | 2008-09-30 | 2013-11-21 | 國立大學法人九州工業大學 | Floating Gate Type Nonvolatile Memory Configuration |
US7983081B2 (en) * | 2008-12-14 | 2011-07-19 | Chip.Memory Technology, Inc. | Non-volatile memory apparatus and method with deep N-well |
US9324866B2 (en) | 2012-01-23 | 2016-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for transistor with line end extension |
JP5856836B2 (ja) * | 2011-12-16 | 2016-02-10 | セイコーインスツル株式会社 | 不揮発性半導体記憶装置 |
JP2013187534A (ja) * | 2012-03-08 | 2013-09-19 | Ememory Technology Inc | 消去可能プログラマブル単一ポリ不揮発性メモリ |
EP2639817A1 (de) * | 2012-03-12 | 2013-09-18 | eMemory Technology Inc. | Verfahren zum Herstellen einer Floating-gate-Speichervorrichtung mit einer einzelnen Polysiliziumschicht |
CN102723333B (zh) * | 2012-07-11 | 2014-09-03 | 无锡来燕微电子有限公司 | 一种具有p+浮栅电极的非挥发性记忆体及其制备方法 |
KR102166525B1 (ko) * | 2014-04-18 | 2020-10-15 | 에스케이하이닉스 주식회사 | 단일층의 게이트를 갖는 불휘발성 메모리소자 및 그 동작방법과, 이를 이용한 메모리 셀어레이 |
CN108257963A (zh) * | 2016-12-29 | 2018-07-06 | 北京同方微电子有限公司 | 一种闪存存储单元 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2677327B2 (ja) * | 1988-07-11 | 1997-11-17 | 株式会社日立製作所 | 半導体装置 |
JPH03179780A (ja) * | 1989-12-07 | 1991-08-05 | Fujitsu Ltd | 半導体装置 |
US5712180A (en) * | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
JP2596695B2 (ja) * | 1993-05-07 | 1997-04-02 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Eeprom |
JPH06334194A (ja) * | 1993-05-25 | 1994-12-02 | Fuji Electric Co Ltd | 不揮発性半導体メモリ |
JPH07183410A (ja) * | 1993-12-24 | 1995-07-21 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US5761121A (en) * | 1996-10-31 | 1998-06-02 | Programmable Microelectronics Corporation | PMOS single-poly non-volatile memory structure |
US5892709A (en) * | 1997-05-09 | 1999-04-06 | Motorola, Inc. | Single level gate nonvolatile memory device and method for accessing the same |
US6936849B1 (en) * | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
US6243289B1 (en) * | 1998-04-08 | 2001-06-05 | Micron Technology Inc. | Dual floating gate programmable read only memory cell structure and method for its fabrication and operation |
EP0975022A1 (de) * | 1998-07-22 | 2000-01-26 | STMicroelectronics S.r.l. | Herstellungsverfahren für elektronische Bauelemente mit Festwertspeicherzellen und Niederspannungstransistoren, die selbstjustierte Silizidübergänge aufweisen |
US6025625A (en) * | 1999-02-25 | 2000-02-15 | Worldwide Semiconductor Manufacturing Corporation | Single-poly EEPROM cell structure operations and array architecture |
JP2002541669A (ja) * | 1999-03-31 | 2002-12-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 不揮発性メモリセルを有する半導体デバイス |
US6559007B1 (en) * | 2000-04-06 | 2003-05-06 | Micron Technology, Inc. | Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide |
US7212437B2 (en) * | 2001-07-02 | 2007-05-01 | Massimo Atti | Charge coupled EEPROM device and corresponding method of operation |
US6700154B1 (en) * | 2002-09-20 | 2004-03-02 | Lattice Semiconductor Corporation | EEPROM cell with trench coupling capacitor |
JP4390480B2 (ja) * | 2003-06-04 | 2009-12-24 | パナソニック株式会社 | 不揮発性半導体記憶装置 |
-
2002
- 2002-07-25 FR FR0209454A patent/FR2838554B1/fr not_active Expired - Fee Related
-
2003
- 2003-01-31 DE DE60330130T patent/DE60330130D1/de not_active Expired - Lifetime
- 2003-01-31 EP EP03709915A patent/EP1495496B1/de not_active Expired - Lifetime
- 2003-01-31 WO PCT/FR2003/000311 patent/WO2003088366A1/fr active Application Filing
- 2003-01-31 US US10/511,712 patent/US7333362B2/en not_active Expired - Lifetime
- 2003-01-31 AT AT03709915T patent/ATE449424T1/de not_active IP Right Cessation
- 2003-01-31 JP JP2003585189A patent/JP4662529B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20050219912A1 (en) | 2005-10-06 |
JP2005522884A (ja) | 2005-07-28 |
EP1495496A1 (de) | 2005-01-12 |
FR2838554B1 (fr) | 2004-07-09 |
FR2838554A1 (fr) | 2003-10-17 |
DE60330130D1 (de) | 2009-12-31 |
EP1495496B1 (de) | 2009-11-18 |
JP4662529B2 (ja) | 2011-03-30 |
US7333362B2 (en) | 2008-02-19 |
WO2003088366A1 (fr) | 2003-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |