FR2838563B1 - Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille - Google Patents

Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille

Info

Publication number
FR2838563B1
FR2838563B1 FR0204690A FR0204690A FR2838563B1 FR 2838563 B1 FR2838563 B1 FR 2838563B1 FR 0204690 A FR0204690 A FR 0204690A FR 0204690 A FR0204690 A FR 0204690A FR 2838563 B1 FR2838563 B1 FR 2838563B1
Authority
FR
France
Prior art keywords
volatile
single layer
electrically programmable
conductive device
grid material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0204690A
Other languages
English (en)
Other versions
FR2838563A1 (fr
Inventor
Philippe Gendrier
Cyrille Dray
Richard Fournel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0204690A priority Critical patent/FR2838563B1/fr
Priority to FR0209454A priority patent/FR2838554B1/fr
Priority to EP03709915A priority patent/EP1495496B1/fr
Priority to JP2003585189A priority patent/JP4662529B2/ja
Priority to US10/511,712 priority patent/US7333362B2/en
Priority to AT03709915T priority patent/ATE449424T1/de
Priority to PCT/FR2003/000311 priority patent/WO2003088366A1/fr
Priority to DE60330130T priority patent/DE60330130D1/de
Publication of FR2838563A1 publication Critical patent/FR2838563A1/fr
Application granted granted Critical
Publication of FR2838563B1 publication Critical patent/FR2838563B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
FR0204690A 2002-04-15 2002-04-15 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille Expired - Fee Related FR2838563B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0204690A FR2838563B1 (fr) 2002-04-15 2002-04-15 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille
FR0209454A FR2838554B1 (fr) 2002-04-15 2002-07-25 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
JP2003585189A JP4662529B2 (ja) 2002-04-15 2003-01-31 半導体メモリ・デバイス
US10/511,712 US7333362B2 (en) 2002-04-15 2003-01-31 Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane
EP03709915A EP1495496B1 (fr) 2002-04-15 2003-01-31 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
AT03709915T ATE449424T1 (de) 2002-04-15 2003-01-31 Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche
PCT/FR2003/000311 WO2003088366A1 (fr) 2002-04-15 2003-01-31 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
DE60330130T DE60330130D1 (de) 2002-04-15 2003-01-31 Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0204690A FR2838563B1 (fr) 2002-04-15 2002-04-15 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille

Publications (2)

Publication Number Publication Date
FR2838563A1 FR2838563A1 (fr) 2003-10-17
FR2838563B1 true FR2838563B1 (fr) 2004-07-09

Family

ID=28459844

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0204690A Expired - Fee Related FR2838563B1 (fr) 2002-04-15 2002-04-15 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille

Country Status (1)

Country Link
FR (1) FR2838563B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101930982B (zh) * 2010-07-07 2012-04-18 中国电子科技集团公司第五十八研究所 基于flotox结构的抗辐射eeprom存储单元结构

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2596695B2 (ja) * 1993-05-07 1997-04-02 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｅｅｐｒｏｍ
US5761121A (en) * 1996-10-31 1998-06-02 Programmable Microelectronics Corporation PMOS single-poly non-volatile memory structure
US6025625A (en) * 1999-02-25 2000-02-15 Worldwide Semiconductor Manufacturing Corporation Single-poly EEPROM cell structure operations and array architecture
JP2002541669A (ja) * 1999-03-31 2002-12-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不揮発性メモリセルを有する半導体デバイス

Also Published As

Publication number Publication date
FR2838563A1 (fr) 2003-10-17

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091231