DE602005007405D1 - Speicherbauelemente basierend auf elektrisch programmierbaren Filmen - Google Patents
Speicherbauelemente basierend auf elektrisch programmierbaren FilmenInfo
- Publication number
- DE602005007405D1 DE602005007405D1 DE602005007405T DE602005007405T DE602005007405D1 DE 602005007405 D1 DE602005007405 D1 DE 602005007405D1 DE 602005007405 T DE602005007405 T DE 602005007405T DE 602005007405 T DE602005007405 T DE 602005007405T DE 602005007405 D1 DE602005007405 D1 DE 602005007405D1
- Authority
- DE
- Germany
- Prior art keywords
- memory devices
- devices based
- electrically programmable
- programmable films
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Semiconductor Memories (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55624604P | 2004-03-24 | 2004-03-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005007405D1 true DE602005007405D1 (de) | 2008-07-24 |
Family
ID=34860543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005007405T Expired - Fee Related DE602005007405D1 (de) | 2004-03-24 | 2005-03-19 | Speicherbauelemente basierend auf elektrisch programmierbaren Filmen |
Country Status (9)
Country | Link |
---|---|
US (1) | US20050211978A1 (de) |
EP (1) | EP1580825B1 (de) |
JP (1) | JP2005307191A (de) |
KR (1) | KR100687187B1 (de) |
CN (2) | CN1770461A (de) |
CA (1) | CA2500938A1 (de) |
DE (1) | DE602005007405D1 (de) |
SG (1) | SG115841A1 (de) |
TW (1) | TWI270982B (de) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6992323B2 (en) * | 2001-08-13 | 2006-01-31 | Advanced Micro Devices, Inc. | Memory cell |
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US20060249370A1 (en) * | 2003-09-15 | 2006-11-09 | Makoto Nagashima | Back-biased face target sputtering based liquid crystal display device |
US20050212022A1 (en) * | 2004-03-24 | 2005-09-29 | Greer Edward C | Memory cell having an electric field programmable storage element, and method of operating same |
DE102004037150B4 (de) * | 2004-07-30 | 2006-08-24 | Infineon Technologies Ag | Resistiv arbeitende Speicherzelle für Low-Voltage-Anwendungen und Verfahren zu deren Herstellung |
US7344913B1 (en) * | 2005-04-06 | 2008-03-18 | Spansion Llc | Spin on memory cell active layer doped with metal ions |
US20070007585A1 (en) * | 2005-07-05 | 2007-01-11 | Spansion Llc | Memory device with improved data retention |
US20070009821A1 (en) * | 2005-07-08 | 2007-01-11 | Charlotte Cutler | Devices containing multi-bit data |
US7935957B2 (en) * | 2005-08-12 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and a semiconductor device |
JP2007073969A (ja) * | 2005-09-07 | 2007-03-22 | Samsung Electronics Co Ltd | 電荷トラップ型メモリ素子及びその製造方法 |
KR100654361B1 (ko) * | 2005-09-15 | 2006-12-08 | 한양대학교 산학협력단 | 고분자 박막 내에 형성된 나노 결정체를 사용한 비휘발성고분자 쌍안정성 기억 소자 및 그 제조 방법 |
US7642043B2 (en) * | 2005-11-16 | 2010-01-05 | Shin-Etsu Chemical Co., Ltd. | Rework process for photoresist film |
KR101167737B1 (ko) * | 2006-02-22 | 2012-07-23 | 삼성전자주식회사 | 저항변화형 유기 메모리 소자 및 그의 제조방법 |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US20080032049A1 (en) * | 2006-07-29 | 2008-02-07 | Lex Kosowsky | Voltage switchable dielectric material having high aspect ratio particles |
JP5194401B2 (ja) * | 2006-08-02 | 2013-05-08 | ソニー株式会社 | 電荷移動錯体薄膜、及び、電界効果型トランジスタ |
JP2008077817A (ja) * | 2006-09-12 | 2008-04-03 | Rohm & Haas Co | 情報の書き込みおよび読み取り方法ならびにそれに基づく装置 |
EP1919071B1 (de) * | 2006-11-03 | 2011-04-27 | Danfoss A/S | Dielektrischer Verbundwerkstoff und Verfahren zur Herstellung eines dielektrischen Verbundwerkstoffs |
JP4577695B2 (ja) * | 2006-11-07 | 2010-11-10 | エルピーダメモリ株式会社 | 半導体記憶装置及び半導体記憶装置の製造方法 |
WO2008059940A1 (en) | 2006-11-17 | 2008-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and method for manufacturing the same, and semiconductor device |
KR100842730B1 (ko) * | 2007-01-16 | 2008-07-01 | 삼성전자주식회사 | 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법 |
KR100818239B1 (ko) * | 2007-04-09 | 2008-04-02 | 한국과학기술원 | 기계적인 스위치를 이용한 비휘발성 메모리 셀 및 그동작방법 |
US8084765B2 (en) * | 2007-05-07 | 2011-12-27 | Xerox Corporation | Electronic device having a dielectric layer |
TWI339895B (en) * | 2007-05-09 | 2011-04-01 | Ind Tech Res Inst | Organic non-volatile memory material and memory device utilizing the same |
CN101330128B (zh) * | 2007-06-18 | 2010-08-25 | 财团法人工业技术研究院 | 有机非易失性存储材料及存储器件 |
US7884342B2 (en) * | 2007-07-31 | 2011-02-08 | Macronix International Co., Ltd. | Phase change memory bridge cell |
GB0721527D0 (en) * | 2007-11-02 | 2007-12-12 | P2I Ltd | Filtration Membranes |
KR101067051B1 (ko) * | 2007-11-29 | 2011-09-22 | 파나소닉 주식회사 | 비휘발성 기억 장치 및 그 제조 방법 |
US7692959B2 (en) | 2008-04-22 | 2010-04-06 | International Business Machines Corporation | Multilayer storage class memory using externally heated phase change material |
IT1392754B1 (it) * | 2008-12-18 | 2012-03-16 | St Microelectronics Srl | Nanoarray ad incrocio con strato organico attivo anisotropico |
US8064247B2 (en) * | 2009-01-14 | 2011-11-22 | Macronix International Co., Ltd. | Rewritable memory device based on segregation/re-absorption |
US8213224B2 (en) | 2009-11-23 | 2012-07-03 | International Business Machines Corporation | High density low power nanowire phase change material memory device |
CN102074648B (zh) * | 2009-11-24 | 2015-04-15 | 清华大学 | 压电元件及其制备方法 |
KR101361658B1 (ko) | 2009-12-04 | 2014-02-21 | 한국전자통신연구원 | 저항형 메모리 장치 및 그 제조 방법 |
TWI407607B (zh) * | 2010-01-22 | 2013-09-01 | Hon Hai Prec Ind Co Ltd | 壓電元件及其製備方法 |
WO2013177539A1 (en) | 2012-05-24 | 2013-11-28 | University Of Utah Research Foundation | Compounds, sensors, methods, and systems for detecting gamma radiation |
JP2014027185A (ja) * | 2012-07-27 | 2014-02-06 | Toshiba Corp | 不揮発性記憶装置 |
US9991076B2 (en) * | 2013-01-28 | 2018-06-05 | Massachusetts Institute Of Technology | Electromechanical device |
JP2016530343A (ja) * | 2013-06-06 | 2016-09-29 | キング アブドゥラー ユニバーシティ オブ サイエンス アンド テクノロジー | トリプチセン系酸二無水物、ポリイミド、それぞれを製造する方法、及び使用方法 |
GB2517755A (en) | 2013-08-30 | 2015-03-04 | Ibm | State-changeable device |
JP2015111054A (ja) * | 2013-12-06 | 2015-06-18 | セイコーエプソン株式会社 | 光学素子及びその製造方法 |
KR101482723B1 (ko) * | 2014-03-07 | 2015-01-15 | 한양대학교 산학협력단 | 비휘발성 메모리 소자 및 그 제조 방법 |
US9858111B2 (en) * | 2014-06-18 | 2018-01-02 | Empire Technologies Development Llc | Heterogeneous magnetic memory architecture |
EP3165511B1 (de) * | 2015-11-03 | 2018-08-08 | The State Scientific Institution "Institute of Chemistry of New Materials of National Academy of Sciences of Belarus" | Verfahren zur herstellung eines polymerfilms mit einer hohen konzentration von silbernanopartikeln |
GB2545264B (en) * | 2015-12-11 | 2020-01-15 | Advanced Risc Mach Ltd | A storage array |
JP2019514195A (ja) * | 2016-03-23 | 2019-05-30 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | メモリーの作製方法、メモリー、及びメモリーの使用 |
JP2019520455A (ja) * | 2016-06-28 | 2019-07-18 | ダウ グローバル テクノロジーズ エルエルシー | 有機電荷輸送フィルムを作製するためのプロセス |
DE112017003257T5 (de) * | 2016-06-30 | 2019-04-18 | Osram Opto Semiconductors Gmbh | Wellenlängenkonverter mit einem polysiloxanmaterial, herstellungsverfahren und ihn enthaltende festkörperbeleuchtungsvorrichtung |
US10418084B2 (en) * | 2017-02-07 | 2019-09-17 | Micron Technology, Inc. | Pre-writing memory cells of an array |
KR102355285B1 (ko) | 2017-07-14 | 2022-01-24 | 엘지디스플레이 주식회사 | 접촉 감응 소자 및 이를 포함하는 표시 장치 |
CA3078540A1 (en) | 2017-11-30 | 2019-06-06 | Arrakis Therapeutics, Inc. | Nucleic acid-binding photoprobes and uses thereof |
CN108417709B (zh) * | 2018-02-05 | 2020-03-20 | 复旦大学 | 一种集多值存储和逻辑运算于一体的器件单元及操作方法 |
US11538523B2 (en) * | 2018-08-17 | 2022-12-27 | Tetramem Inc. | Crossbar array with reduced disturbance |
CN112704491B (zh) * | 2020-12-28 | 2022-01-28 | 华南理工大学 | 基于姿态传感器和动捕模板数据的下肢步态预测方法 |
US20220254799A1 (en) * | 2021-02-05 | 2022-08-11 | Macronix International Co., Ltd. | Semiconductor device and operation method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60203608A (ja) * | 1984-03-28 | 1985-10-15 | Hitachi Chem Co Ltd | 電導性重合体の製造法 |
DE69232758T2 (de) * | 1991-03-26 | 2003-02-06 | Fujitsu Ltd | Organische, funktionnelle, dünne Schicht, Herstellung und Verwendung |
US5238607A (en) * | 1992-02-28 | 1993-08-24 | E. I. Du Pont De Nemours And Company | Photoconductive polymer compositions and their use |
US6208553B1 (en) * | 1999-07-01 | 2001-03-27 | The Regents Of The University Of California | High density non-volatile memory device incorporating thiol-derivatized porphyrins |
US6992323B2 (en) * | 2001-08-13 | 2006-01-31 | Advanced Micro Devices, Inc. | Memory cell |
US6812309B2 (en) * | 2002-01-08 | 2004-11-02 | Rohm And Haas Company | Digitally encoded polymers |
JP2004047791A (ja) * | 2002-07-12 | 2004-02-12 | Pioneer Electronic Corp | 有機薄膜スイッチングメモリ素子及びメモリ装置 |
US7274035B2 (en) * | 2003-09-03 | 2007-09-25 | The Regents Of The University Of California | Memory devices based on electric field programmable films |
-
2005
- 2005-03-16 CA CA002500938A patent/CA2500938A1/en not_active Abandoned
- 2005-03-19 EP EP05251695A patent/EP1580825B1/de not_active Expired - Fee Related
- 2005-03-19 DE DE602005007405T patent/DE602005007405D1/de not_active Expired - Fee Related
- 2005-03-22 US US11/086,176 patent/US20050211978A1/en not_active Abandoned
- 2005-03-23 CN CN200510098031.6A patent/CN1770461A/zh active Pending
- 2005-03-23 JP JP2005083213A patent/JP2005307191A/ja active Pending
- 2005-03-23 CN CN200510056066.3A patent/CN1674293A/zh active Pending
- 2005-03-24 TW TW094109195A patent/TWI270982B/zh not_active IP Right Cessation
- 2005-03-24 SG SG200502534A patent/SG115841A1/en unknown
- 2005-03-24 KR KR1020050024434A patent/KR100687187B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200614500A (en) | 2006-05-01 |
SG115841A1 (en) | 2005-10-28 |
CN1674293A (zh) | 2005-09-28 |
US20050211978A1 (en) | 2005-09-29 |
EP1580825A1 (de) | 2005-09-28 |
CA2500938A1 (en) | 2005-09-24 |
KR100687187B1 (ko) | 2007-02-27 |
EP1580825B1 (de) | 2008-06-11 |
TWI270982B (en) | 2007-01-11 |
KR20060044673A (ko) | 2006-05-16 |
JP2005307191A (ja) | 2005-11-04 |
CN1770461A (zh) | 2006-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602005007405D1 (de) | Speicherbauelemente basierend auf elektrisch programmierbaren Filmen | |
SG109602A1 (en) | Memory devices based on electric field programmable films | |
DE60323202D1 (de) | Phasenwechselspeicheranordnung | |
DE602005009411D1 (de) | Halbleiterspeichervorrichtung | |
DK1854342T3 (da) | Fleksibel elektronisk anordning | |
DE602005021338D1 (de) | Elektrische dermabrasionsvorrichtung | |
DE602005006197D1 (de) | Halbleiterspeicherbaustein | |
DE502004001396D1 (de) | Elektrisch beheizbare Flüssigkeitsleitung | |
DE502005010056D1 (de) | Vorrichtung mit formgedächtniselement | |
DE602006011224D1 (de) | Elektronisches Gerät | |
DE502005003419D1 (de) | Gefahrenmelder | |
DE602004002232D1 (de) | Elektronisches Gerät | |
DE602005015925D1 (de) | Speicherkarte | |
DE502005001432D1 (de) | Elektrisches feldgerät | |
DE502005010450D1 (de) | Elektrische baugruppe | |
ITMI20041957A1 (it) | Dispositivo di memoria | |
DE602004015051D1 (de) | Elektronisches Gerät | |
DE602004023713D1 (de) | Leitungsabschlussschaltung | |
DE502006004870D1 (de) | Elektrisches durchführungsbauelement | |
DE602006001236D1 (de) | Programmierbares Endgerätsystem | |
DE60334276D1 (de) | Programmierbarer Speichertransistor | |
GB2424518B (en) | Flash memory device | |
DE602004032076D1 (de) | Speichervorrichtung | |
SG128666A1 (en) | Electric field programmable films and memory devices based thereon | |
FI20045505A0 (fi) | Laitteen muistiin tallennettavan tiedon suojaaminen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |