SG115841A1 - Memory devices based on electric field programmable films - Google Patents

Memory devices based on electric field programmable films

Info

Publication number
SG115841A1
SG115841A1 SG200502534A SG200502534A SG115841A1 SG 115841 A1 SG115841 A1 SG 115841A1 SG 200502534 A SG200502534 A SG 200502534A SG 200502534 A SG200502534 A SG 200502534A SG 115841 A1 SG115841 A1 SG 115841A1
Authority
SG
Singapore
Prior art keywords
electric field
memory devices
field programmable
devices based
programmable films
Prior art date
Application number
SG200502534A
Inventor
Bu Lujia
Cutler Charlotte
R Szmanda Charles
Cagin Emine
A Gronbeck Dana
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Publication of SG115841A1 publication Critical patent/SG115841A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Semiconductor Memories (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Laminated Bodies (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG200502534A 2004-03-24 2005-03-24 Memory devices based on electric field programmable films SG115841A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55624604P 2004-03-24 2004-03-24

Publications (1)

Publication Number Publication Date
SG115841A1 true SG115841A1 (en) 2005-10-28

Family

ID=34860543

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200502534A SG115841A1 (en) 2004-03-24 2005-03-24 Memory devices based on electric field programmable films

Country Status (9)

Country Link
US (1) US20050211978A1 (en)
EP (1) EP1580825B1 (en)
JP (1) JP2005307191A (en)
KR (1) KR100687187B1 (en)
CN (2) CN1770461A (en)
CA (1) CA2500938A1 (en)
DE (1) DE602005007405D1 (en)
SG (1) SG115841A1 (en)
TW (1) TWI270982B (en)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6992323B2 (en) * 2001-08-13 2006-01-31 Advanced Micro Devices, Inc. Memory cell
US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
US20060249370A1 (en) * 2003-09-15 2006-11-09 Makoto Nagashima Back-biased face target sputtering based liquid crystal display device
US20050212022A1 (en) * 2004-03-24 2005-09-29 Greer Edward C Memory cell having an electric field programmable storage element, and method of operating same
DE102004037150B4 (en) * 2004-07-30 2006-08-24 Infineon Technologies Ag Resistive memory cell for low-voltage applications and method for their production
US7344913B1 (en) * 2005-04-06 2008-03-18 Spansion Llc Spin on memory cell active layer doped with metal ions
US20070007585A1 (en) * 2005-07-05 2007-01-11 Spansion Llc Memory device with improved data retention
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
US7935957B2 (en) * 2005-08-12 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device
JP2007073969A (en) * 2005-09-07 2007-03-22 Samsung Electronics Co Ltd Charge trap type memory device and method of manufacturing the same
KR100654361B1 (en) * 2005-09-15 2006-12-08 한양대학교 산학협력단 Nonvolatile polymer bistability memory devices utilizing nano particles embedded in polymer thin films and manufacturing method thereof
EP1788436B1 (en) * 2005-11-16 2013-01-09 Shin-Etsu Chemical Company, Ltd. Rework process for photoresist film
KR101167737B1 (en) * 2006-02-22 2012-07-23 삼성전자주식회사 Resistive organic memory device and preparation method thereof
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
US20080032049A1 (en) * 2006-07-29 2008-02-07 Lex Kosowsky Voltage switchable dielectric material having high aspect ratio particles
JP5194401B2 (en) * 2006-08-02 2013-05-08 ソニー株式会社 Charge transfer complex thin film and field effect transistor
JP2008077817A (en) * 2006-09-12 2008-04-03 Rohm & Haas Co Method for writing and reading information and device based thereon
DE602007014165D1 (en) * 2006-11-03 2011-06-09 Danfoss As Dielectric composite and method of making a dielectric composite
JP4577695B2 (en) * 2006-11-07 2010-11-10 エルピーダメモリ株式会社 Semiconductor memory device and manufacturing method of semiconductor memory device
WO2008059940A1 (en) 2006-11-17 2008-05-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and method for manufacturing the same, and semiconductor device
KR100842730B1 (en) * 2007-01-16 2008-07-01 삼성전자주식회사 Multi-bit electro-mechanical memory device and method manufacturing the same
KR100818239B1 (en) * 2007-04-09 2008-04-02 한국과학기술원 Non-volatile memory cell using mechanical switch and method of driving thereof
US8084765B2 (en) * 2007-05-07 2011-12-27 Xerox Corporation Electronic device having a dielectric layer
TWI339895B (en) * 2007-05-09 2011-04-01 Ind Tech Res Inst Organic non-volatile memory material and memory device utilizing the same
CN101330128B (en) * 2007-06-18 2010-08-25 财团法人工业技术研究院 Organic non-volatile memory material and memory device
US7884342B2 (en) * 2007-07-31 2011-02-08 Macronix International Co., Ltd. Phase change memory bridge cell
GB0721527D0 (en) * 2007-11-02 2007-12-12 P2I Ltd Filtration Membranes
EP2219221A4 (en) * 2007-11-29 2013-03-13 Panasonic Corp Nonvolatile storage device and method for manufacturing the same
US7692959B2 (en) 2008-04-22 2010-04-06 International Business Machines Corporation Multilayer storage class memory using externally heated phase change material
IT1392754B1 (en) * 2008-12-18 2012-03-16 St Microelectronics Srl CROSS NANOARRAY WITH ANISOTROPIC ACTIVE ORGANIC LAYER
US8064247B2 (en) * 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8213224B2 (en) 2009-11-23 2012-07-03 International Business Machines Corporation High density low power nanowire phase change material memory device
CN102074648B (en) * 2009-11-24 2015-04-15 清华大学 Piezoelectric element and preparation method thereof
KR101361658B1 (en) 2009-12-04 2014-02-21 한국전자통신연구원 Resistive memory device and method of fabricating the same
TWI407607B (en) * 2010-01-22 2013-09-01 Hon Hai Prec Ind Co Ltd Piezoelectric element and method for making the same
US9452989B2 (en) 2012-05-24 2016-09-27 University Of Utah Research Foundation Compounds, sensors, methods, and systems for detecting gamma radiation
JP2014027185A (en) * 2012-07-27 2014-02-06 Toshiba Corp Nonvolatile memory
EP2948968B1 (en) * 2013-01-28 2018-03-28 Massachusetts Institute of Technology Electromechanical device
WO2014207559A2 (en) * 2013-06-06 2014-12-31 King Abdullah University Of Science And Technlology Triptycene-based dianhydrides, polyimides, methods of making each, and methods of use
GB2517755A (en) 2013-08-30 2015-03-04 Ibm State-changeable device
JP2015111054A (en) * 2013-12-06 2015-06-18 セイコーエプソン株式会社 Optical element, and manufacturing method thereof
KR101482723B1 (en) * 2014-03-07 2015-01-15 한양대학교 산학협력단 Non-volatile memory device and method for manufacturing the same
US9858111B2 (en) * 2014-06-18 2018-01-02 Empire Technologies Development Llc Heterogeneous magnetic memory architecture
EP3165511B1 (en) * 2015-11-03 2018-08-08 The State Scientific Institution "Institute of Chemistry of New Materials of National Academy of Sciences of Belarus" Method for producing a polymer film with a high concentration of silver nanoparticles
GB2545264B (en) * 2015-12-11 2020-01-15 Advanced Risc Mach Ltd A storage array
US10833264B2 (en) * 2016-03-23 2020-11-10 Forschungszentrum Juelich Gmbh Method for producing a memory cell having a porous dielectric and use of the memory cell
JP2019520455A (en) * 2016-06-28 2019-07-18 ダウ グローバル テクノロジーズ エルエルシー Process for making an organic charge transport film
US10923634B2 (en) * 2016-06-30 2021-02-16 Osram Opto Semiconductors Gmbh Wavelength converter having a polysiloxane material, method of making, and solid state lighting device containing same
US10418084B2 (en) * 2017-02-07 2019-09-17 Micron Technology, Inc. Pre-writing memory cells of an array
KR102355285B1 (en) 2017-07-14 2022-01-24 엘지디스플레이 주식회사 Touch sensitive device and display device comprising the same
CN111386127A (en) 2017-11-30 2020-07-07 阿拉基斯医疗公司 Nucleic acid-binding light probes and uses thereof
CN108417709B (en) * 2018-02-05 2020-03-20 复旦大学 Device unit integrating multi-value storage and logic operation and operation method
US11538523B2 (en) * 2018-08-17 2022-12-27 Tetramem Inc. Crossbar array with reduced disturbance
CN112704491B (en) * 2020-12-28 2022-01-28 华南理工大学 Lower limb gait prediction method based on attitude sensor and dynamic capture template data
US20220254799A1 (en) * 2021-02-05 2022-08-11 Macronix International Co., Ltd. Semiconductor device and operation method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60203608A (en) * 1984-03-28 1985-10-15 Hitachi Chem Co Ltd Preparation of electrically conductive polymer
EP0506368B1 (en) * 1991-03-26 2002-09-04 Fujitsu Limited Organic functional thin film, fabrication and use thereof
US5238607A (en) * 1992-02-28 1993-08-24 E. I. Du Pont De Nemours And Company Photoconductive polymer compositions and their use
US6208553B1 (en) * 1999-07-01 2001-03-27 The Regents Of The University Of California High density non-volatile memory device incorporating thiol-derivatized porphyrins
US6992323B2 (en) * 2001-08-13 2006-01-31 Advanced Micro Devices, Inc. Memory cell
US6812309B2 (en) * 2002-01-08 2004-11-02 Rohm And Haas Company Digitally encoded polymers
JP2004047791A (en) * 2002-07-12 2004-02-12 Pioneer Electronic Corp Organic thin film switching memory element and memory device
US7274035B2 (en) * 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films

Also Published As

Publication number Publication date
JP2005307191A (en) 2005-11-04
CN1674293A (en) 2005-09-28
KR20060044673A (en) 2006-05-16
CN1770461A (en) 2006-05-10
CA2500938A1 (en) 2005-09-24
EP1580825A1 (en) 2005-09-28
TWI270982B (en) 2007-01-11
TW200614500A (en) 2006-05-01
KR100687187B1 (en) 2007-02-27
DE602005007405D1 (en) 2008-07-24
EP1580825B1 (en) 2008-06-11
US20050211978A1 (en) 2005-09-29

Similar Documents

Publication Publication Date Title
SG115841A1 (en) Memory devices based on electric field programmable films
SG109602A1 (en) Memory devices based on electric field programmable films
EP1950779A4 (en) Electrical storage device
EP1883144A4 (en) Electric storage device
TWI340069B (en) Electric tightening device
EP1877133A4 (en) Implantable electric device
SI1610422T1 (en) Electrical connecting device
EP1618609A4 (en) Programmable semiconductor device
AU2003265062A1 (en) Programmable magnetic memory device
EP1946981B8 (en) Electric steering-lock device
EP1714324A4 (en) High k dielectric film
GB0427650D0 (en) Electrical device
SG128666A1 (en) Electric field programmable films and memory devices based thereon
PL1631436T3 (en) Calibrating device
GB2424518B (en) Flash memory device
AU2003265087A1 (en) Programmable magnetic memory device fp-mram
AU2006300857A1 (en) Electrical storage device
GB0515641D0 (en) Flash memory devices
EP1638116A4 (en) Electric wire-coloring device
EP1538553A4 (en) External storage device
GB0426360D0 (en) Electrical device
PT1661213T (en) An electrical connection device
HU0401068D0 (en) Electrical nasal-cleaner
GB0505458D0 (en) Electrical device
DE602004002799D1 (en) Rotatable electrical component