DE60336204D1 - Integrierte Schaltung mit programmierbaren Schmelzsicherungsarray - Google Patents

Integrierte Schaltung mit programmierbaren Schmelzsicherungsarray

Info

Publication number
DE60336204D1
DE60336204D1 DE60336204T DE60336204T DE60336204D1 DE 60336204 D1 DE60336204 D1 DE 60336204D1 DE 60336204 T DE60336204 T DE 60336204T DE 60336204 T DE60336204 T DE 60336204T DE 60336204 D1 DE60336204 D1 DE 60336204D1
Authority
DE
Germany
Prior art keywords
integrated circuit
fuse array
programmable fuse
programmable
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60336204T
Other languages
English (en)
Inventor
Roger C Griesmer
Robert L Pitts
Bryan D Sheffield
Kun-His Li
Mark J Jensen
Vinod J Menezes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE60336204D1 publication Critical patent/DE60336204D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/20—Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/26—Floating gate memory which is adapted to be one-time programmable [OTP], e.g. containing multiple OTP blocks permitting limited update ability

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
DE60336204T 2002-12-26 2003-12-24 Integrierte Schaltung mit programmierbaren Schmelzsicherungsarray Expired - Lifetime DE60336204D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43659602P 2002-12-26 2002-12-26

Publications (1)

Publication Number Publication Date
DE60336204D1 true DE60336204D1 (de) 2011-04-14

Family

ID=32469634

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60336204T Expired - Lifetime DE60336204D1 (de) 2002-12-26 2003-12-24 Integrierte Schaltung mit programmierbaren Schmelzsicherungsarray

Country Status (4)

Country Link
US (1) US6876594B2 (de)
EP (1) EP1434238B1 (de)
JP (1) JP2004215261A (de)
DE (1) DE60336204D1 (de)

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US7098721B2 (en) * 2004-09-01 2006-08-29 International Business Machines Corporation Low voltage programmable eFuse with differential sensing scheme
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US7284168B2 (en) * 2005-01-26 2007-10-16 Hewlett-Packard Development Company, L.P. Method and system for testing RAM redundant integrated circuits
US8607328B1 (en) 2005-03-04 2013-12-10 David Hodges Methods and systems for automated system support
US7761773B2 (en) * 2005-06-30 2010-07-20 Sigmatel, Inc. Semiconductor device including a unique identifier and error correction code
US8769295B2 (en) * 2005-08-01 2014-07-01 Intel Corporation Computing system feature activation mechanism
US7417300B2 (en) * 2006-03-09 2008-08-26 International Business Machines Corporation Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof
US7492630B2 (en) * 2006-07-31 2009-02-17 Sandisk 3D Llc Systems for reverse bias trim operations in non-volatile memory
US7499304B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc Systems for high bandwidth one time field-programmable memory
US7495947B2 (en) * 2006-07-31 2009-02-24 Sandisk 3D Llc Reverse bias trim operations in non-volatile memory
US7522448B2 (en) * 2006-07-31 2009-04-21 Sandisk 3D Llc Controlled pulse operations in non-volatile memory
US7499355B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc High bandwidth one time field-programmable memory
US7719874B2 (en) * 2006-07-31 2010-05-18 Sandisk 3D Llc Systems for controlled pulse operations in non-volatile memory
US7675313B1 (en) * 2006-08-03 2010-03-09 Lattice Semiconductor Corporation Methods and systems for storing a security key using programmable fuses
DE102006042115B4 (de) * 2006-09-07 2018-02-08 Ams Ag Schaltungsanordnung und Verfahren zum Betrieb einer Schaltungsanordnung
TWI319196B (en) * 2006-09-27 2010-01-01 Wisepal Technologies Inc Electrostatic discharge protection circui
US7791972B2 (en) * 2006-11-01 2010-09-07 International Business Machines Corporation Design structure for providing optimal field programming of electronic fuses
DE102006053902A1 (de) * 2006-11-15 2008-05-21 Austriamicrosystems Ag Schaltungsanordnung, umfassend ein Speicherzellenfeld, und Verfahren zu deren Betrieb
JP4323527B2 (ja) * 2007-01-25 2009-09-02 Ｏｋｉセミコンダクタ株式会社 半導体記憶装置
JP5137408B2 (ja) * 2007-02-05 2013-02-06 パナソニック株式会社 電気ヒューズ回路
US8679861B2 (en) * 2007-11-29 2014-03-25 International Business Machines Corporation Semiconductor chip repair by stacking of a base semiconductor chip and a repair semiconductor chip
US7889588B2 (en) * 2008-01-08 2011-02-15 Globalfoundries Inc. Circuit having gate oxide protection for low voltage fuse reads and high voltage fuse programming
US7725844B2 (en) * 2008-02-11 2010-05-25 International Business Machines Corporation Method and circuit for implementing eFuse sense amplifier verification
JP2010016062A (ja) * 2008-07-01 2010-01-21 Toshiba Corp 半導体装置
US8411482B2 (en) * 2008-08-20 2013-04-02 Intel Corporation Programmable read only memory
US8234543B2 (en) * 2009-03-06 2012-07-31 Via Technologies, Inc. Detection and correction of fuse re-growth in a microprocessor
US7795899B1 (en) * 2009-04-08 2010-09-14 Oracle America, Inc. Enabling on-chip features via efuses
US20110010759A1 (en) * 2009-07-09 2011-01-13 Apple Inc. Providing a customized interface for an application store
US8880736B2 (en) * 2009-07-09 2014-11-04 Simon Cooper Methods and systems for archiving and restoring securely installed applications on a computing device
US8281198B2 (en) * 2009-08-07 2012-10-02 Via Technologies, Inc. User-initiatable method for detecting re-grown fuses within a microprocessor
US8097520B2 (en) * 2009-08-19 2012-01-17 International Business Machines Corporation Integration of passive device structures with metal gate layers
US8344428B2 (en) 2009-11-30 2013-01-01 International Business Machines Corporation Nanopillar E-fuse structure and process
US9046915B2 (en) * 2012-02-27 2015-06-02 Advanced Micro Devices, Inc. Circuit and method for initializing a computer system
US8971137B2 (en) * 2013-03-07 2015-03-03 Intel Corporation Bit based fuse repair
TWI568183B (zh) * 2015-11-17 2017-01-21 新唐科技股份有限公司 開關掃描電路與方法
US10140175B2 (en) * 2015-11-20 2018-11-27 Qualcomm Incorporated Protecting an ECC location when transmitting correction data across a memory link
US10347350B2 (en) * 2017-05-19 2019-07-09 Skyworks Solutions, Inc. Dynamic fuse sensing and latch circuit
CN108199732B (zh) * 2018-02-08 2024-01-23 北京智芯微电子科技有限公司 射频传输芯片
US10931874B2 (en) 2018-12-06 2021-02-23 Flir Commercial Systems, Inc. Burst mode calibration sensing and image mode sensing for imaging systems and methods
US11032507B2 (en) * 2018-12-06 2021-06-08 Flir Commercial Systems, Inc. Frame rate and associated device manufacturing techniques for imaging systems and methods
JP2021047743A (ja) * 2019-09-19 2021-03-25 株式会社東芝 電子機器
CN114267405B (zh) * 2020-09-16 2023-08-22 长鑫存储技术有限公司 电流测试电路、装置、方法及存储介质
US11715540B2 (en) * 2022-01-05 2023-08-01 Nanya Technology Corporation Anti-fuse device

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US4698589A (en) * 1986-03-21 1987-10-06 Harris Corporation Test circuitry for testing fuse link programmable memory devices
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US6292422B1 (en) * 1999-12-22 2001-09-18 Texas Instruments Incorporated Read/write protected electrical fuse
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US6608792B2 (en) * 2000-11-09 2003-08-19 Texas Instruments Incorporated Method and apparatus for storing data in an integrated circuit
US6577156B2 (en) * 2000-12-05 2003-06-10 International Business Machines Corporation Method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox
JP2003045196A (ja) * 2001-08-02 2003-02-14 Fujitsu Ltd ブロックアドレス切替機能を有するメモリ回路
US6567295B2 (en) * 2001-06-05 2003-05-20 Hewlett-Packard Development Company, L.P. Addressing and sensing a cross-point diode memory array

Also Published As

Publication number Publication date
US20040129952A1 (en) 2004-07-08
US6876594B2 (en) 2005-04-05
JP2004215261A (ja) 2004-07-29
EP1434238B1 (de) 2011-03-02
EP1434238A3 (de) 2007-08-01
EP1434238A2 (de) 2004-06-30

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