ATE414801T1 - Metallisches material für elektronisches bauteil, elektronisches bauteil, elektronische einrichtung,verfahren zur bearbeitung von metallischem material, verfahren zur herstellung von elektronischem bauteil und elektronisches optisches bauteil - Google Patents

Metallisches material für elektronisches bauteil, elektronisches bauteil, elektronische einrichtung,verfahren zur bearbeitung von metallischem material, verfahren zur herstellung von elektronischem bauteil und elektronisches optisches bauteil

Info

Publication number
ATE414801T1
ATE414801T1 AT03794198T AT03794198T ATE414801T1 AT E414801 T1 ATE414801 T1 AT E414801T1 AT 03794198 T AT03794198 T AT 03794198T AT 03794198 T AT03794198 T AT 03794198T AT E414801 T1 ATE414801 T1 AT E414801T1
Authority
AT
Austria
Prior art keywords
electronic
electronic component
component
metallic material
metallic film
Prior art date
Application number
AT03794198T
Other languages
English (en)
Inventor
Takashi Ueno
Original Assignee
Dept Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=31973037&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE414801(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Dept Corp filed Critical Dept Corp
Application granted granted Critical
Publication of ATE414801T1 publication Critical patent/ATE414801T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/10—Alloys based on copper with silicon as the next major constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H10W20/4424—Copper alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Adornments (AREA)
  • Led Device Packages (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electroluminescent Light Sources (AREA)
AT03794198T 2002-09-04 2003-09-03 Metallisches material für elektronisches bauteil, elektronisches bauteil, elektronische einrichtung,verfahren zur bearbeitung von metallischem material, verfahren zur herstellung von elektronischem bauteil und elektronisches optisches bauteil ATE414801T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002258690A JP3754011B2 (ja) 2002-09-04 2002-09-04 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法、電子部品の製造方法及び電子光学部品

Publications (1)

Publication Number Publication Date
ATE414801T1 true ATE414801T1 (de) 2008-12-15

Family

ID=31973037

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03794198T ATE414801T1 (de) 2002-09-04 2003-09-03 Metallisches material für elektronisches bauteil, elektronisches bauteil, elektronische einrichtung,verfahren zur bearbeitung von metallischem material, verfahren zur herstellung von elektronischem bauteil und elektronisches optisches bauteil

Country Status (10)

Country Link
US (1) US20040187984A1 (de)
EP (4) EP1918391A3 (de)
JP (1) JP3754011B2 (de)
KR (1) KR100673401B1 (de)
CN (1) CN1318626C (de)
AT (1) ATE414801T1 (de)
CA (3) CA2669987A1 (de)
DE (1) DE60324830D1 (de)
TW (1) TWI253475B (de)
WO (1) WO2004022803A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025347A1 (ja) 2004-08-31 2006-03-09 National University Corporation Tohoku University 銅合金及び液晶表示装置
EP2161726A1 (de) * 2002-05-17 2010-03-10 Idemitsu Kosan Co., Ltd. Verdrahtungsmaterial und Leiterplatte, die dieses verwendet
US7940361B2 (en) 2004-08-31 2011-05-10 Advanced Interconnect Materials, Llc Copper alloy and liquid-crystal display device
KR20060062913A (ko) 2004-12-06 2006-06-12 삼성전자주식회사 표시 장치용 배선과 상기 배선을 포함하는 박막트랜지스터 표시판 및 그 제조 방법
JP2007096195A (ja) * 2005-09-30 2007-04-12 Casio Comput Co Ltd 半導体パッケージ及び半導体パッケージの製造方法
DE102005050424B4 (de) * 2005-10-19 2009-10-22 W.C. Heraeus Gmbh Sputtertarget aus mehrkomponentigen Legierungen
KR100787883B1 (ko) * 2006-02-17 2007-12-27 데프트 가부시키가이샤 전자부품용 금속재료 및 금속재료의 가공방법
JP2007294672A (ja) * 2006-04-25 2007-11-08 Mitsubishi Electric Corp 配線基板、表示装置及びそれらの製造方法
JP2008203808A (ja) * 2006-09-08 2008-09-04 Mitsubishi Materials Corp 熱欠陥発生がなくかつ密着性に優れたｔｆｔトランジスターを用いたフラットパネルディスプレイ用配線および電極並びにそれらを形成するためのスパッタリングターゲット
JP4355743B2 (ja) 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
US7642552B2 (en) 2007-01-12 2010-01-05 Tohoku University Liquid crystal display device and manufacturing method therefor
US7633164B2 (en) 2007-04-10 2009-12-15 Tohoku University Liquid crystal display device and manufacturing method therefor
US7782413B2 (en) 2007-05-09 2010-08-24 Tohoku University Liquid crystal display device and manufacturing method therefor
KR100788266B1 (ko) * 2007-08-06 2007-12-27 데프트 가부시키가이샤 전자부품, 전자기기, 전자부품의 제조방법 및 전자광학부품
KR20110039372A (ko) * 2008-08-05 2011-04-15 후루카와 덴키 고교 가부시키가이샤 전기·전자부품용 동합금재
KR101570556B1 (ko) * 2008-08-05 2015-11-19 후루카와 덴키 고교 가부시키가이샤 전기·전자부품용 동합금 재료의 제조방법
JP5571887B2 (ja) 2008-08-19 2014-08-13 アルティアム サービシズ リミテッド エルエルシー 液晶表示装置及びその製造方法
JP5474936B2 (ja) 2009-04-10 2014-04-16 株式会社日立製作所 Ｃｕ−Ａｌ−Ｃｏ系合金の電極・配線を具備した電子部品及びＣｕ−Ａｌ−Ｃｏ系合金の電極・配線用材料ならびにそれを用いた電極・配線用ペースト材料
JP2011034894A (ja) * 2009-08-05 2011-02-17 Hitachi Chem Co Ltd Ｃｕ−Ａｌ合金粉末、それを用いた合金ペーストおよび電子部品
DE102009038589B4 (de) * 2009-08-26 2014-11-20 Heraeus Materials Technology Gmbh & Co. Kg TFT-Struktur mit Cu-Elektroden
JP5403527B2 (ja) 2010-07-02 2014-01-29 合同会社先端配線材料研究所 半導体装置
WO2012002574A1 (ja) 2010-07-02 2012-01-05 合同会社先端配線材料研究所 薄膜トランジスタ
CN103237910B (zh) * 2010-10-13 2015-06-24 大连理工大学 低电阻率高热稳定性的Cu-Ni-Mo合金薄膜及其制备工艺
KR101807341B1 (ko) * 2010-12-08 2017-12-08 갈레온 인터내셔널 코퍼레이션 마찰 저항이 작은 경질의 질화물 코팅
CN102021358A (zh) * 2010-12-31 2011-04-20 黄曦 铜合金材料
US9393263B2 (en) 2011-06-03 2016-07-19 Allergan, Inc. Dermal filler compositions including antioxidants
CN102978431B (zh) * 2012-11-07 2014-07-30 江苏金源锻造股份有限公司 一种用于引线支架的铜铁合金的制造方法
CN102978432B (zh) * 2012-11-07 2014-12-10 江苏金源锻造股份有限公司 一种用于半导体器件的引线支架
CN102978429B (zh) * 2012-11-07 2014-12-10 江苏金源锻造股份有限公司 一种制造支架的铜合金
KR101582176B1 (ko) * 2013-05-13 2016-01-11 울박, 인크 탑재 장치 및 그 제조 방법
US20160336918A1 (en) * 2014-01-15 2016-11-17 Epcos Ag Electroacoustic filter and method of manufacturing an electroacoustic filter
JP6645229B2 (ja) * 2016-02-05 2020-02-14 凸版印刷株式会社 導電性基材、配線付きカラーフィルタ、および液晶ディスプレイ
KR20170116499A (ko) * 2016-04-11 2017-10-19 삼성전기주식회사 인덕터 제조방법 및 인덕터
WO2018189965A1 (ja) 2017-04-13 2018-10-18 株式会社アルバック 液晶表示装置、有機ｅｌ表示装置、半導体素子、配線膜、配線基板、ターゲット
JP6762333B2 (ja) * 2018-03-26 2020-09-30 Ｊｘ金属株式会社 Ｃｕ−Ｎｉ−Ｓｉ系銅合金条
CN114127981A (zh) * 2019-06-28 2022-03-01 阿莫绿色技术有限公司 薄膜箔及制造薄膜箔的方法
CN112616260B (zh) * 2020-11-30 2022-02-15 湖北中培电子科技有限公司 一种促使金属蚀刻且分离无效粒子的蚀刻夹持装置
DE102021106875B4 (de) * 2021-03-19 2023-09-28 Mundorf Eb Gmbh Kupfer-Silber-Gold-Legierung

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR476655A (fr) * 1913-12-27 1915-08-24 New Jersey Zinc Co Procédé pour la concentration ou enrichissement des minerais par flottage
GB398385A (en) * 1933-01-12 1933-09-14 Metallgesellschaft Ag Process for improving the mechanical properties of copper alloys containing from 0.2to 3% of chromium
JPS58144557A (ja) * 1982-02-19 1983-08-27 Tanaka Kikinzoku Kogyo Kk すり接点材料
JPS59140340A (ja) * 1983-01-29 1984-08-11 Furukawa Electric Co Ltd:The リ−ドフレ−ム用銅合金
JPS6365037A (ja) * 1986-09-05 1988-03-23 Furukawa Electric Co Ltd:The 銅細線とその製造方法
EP0264626A3 (de) * 1986-10-17 1988-12-28 Battelle-Institut e.V. Verfahren zur Herstellung von dispersionsgehärteten Legierungen auf der Basis von Kupfer
DE3734424A1 (de) * 1986-10-17 1988-04-28 Battelle Institut E V Verfahren zur herstellung von dispersionsgehaerteten legierungen auf der basis von kupfer
JPH01156442A (ja) * 1987-12-11 1989-06-20 Kobe Steel Ltd 点溶接用電極
JPH0449539A (ja) * 1990-06-19 1992-02-18 Tdk Corp 光情報媒体
JPH06100984A (ja) * 1992-09-22 1994-04-12 Nippon Steel Corp バネ限界値と形状凍結性に優れたバネ用材料及びその製造方法
JPH06192769A (ja) * 1992-12-25 1994-07-12 Nikko Kinzoku Kk 高力高導電性銅合金
JPH06256909A (ja) * 1993-01-06 1994-09-13 Nippon Steel Corp 良好な曲げ性と優れたばね特性を有する電気接点ばね用金属板およびその製造方法
DE19539174C1 (de) * 1995-10-20 1997-02-27 Siemens Ag Oberleitungsfahrdraht einer elektrischen Hochgeschwindigkeitsbahnstrecke und Verfahren zu dessen Herstellung
JP2000349085A (ja) * 1999-06-01 2000-12-15 Nec Corp 半導体装置及び半導体装置の製造方法
JP2001207229A (ja) * 2000-01-27 2001-07-31 Nippon Mining & Metals Co Ltd 電子材料用銅合金
JP2002009061A (ja) * 2000-06-23 2002-01-11 Nec Kagoshima Ltd ウェットエッチング方法
KR20030038727A (ko) * 2000-09-04 2003-05-16 소니 가부시끼 가이샤 반사층, 반사층을 구비한 광학 기록 매체 및 반사층형성용 스퍼터링 타겟
JP4494610B2 (ja) * 2000-09-04 2010-06-30 株式会社フルヤ金属 薄膜形成用スパッタリングターゲット材
JP4583564B2 (ja) * 2000-09-04 2010-11-17 株式会社フルヤ金属 配線、電極及び接点
JP3793020B2 (ja) * 2000-12-26 2006-07-05 松下電器産業株式会社 ドライエッチング方法
JP2002237484A (ja) * 2001-02-07 2002-08-23 Nec Corp Ａｕ膜のエッチング方法
JP2003243325A (ja) * 2002-02-20 2003-08-29 Mitsubishi Materials Corp 銅合金配線膜形成用スパッタリングターゲットおよびそのターゲットを用いて形成した熱影響を受けることの少ない銅合金配線膜

Also Published As

Publication number Publication date
CN1318626C (zh) 2007-05-30
EP1559801A4 (de) 2005-11-30
CN1678765A (zh) 2005-10-05
DE60324830D1 (de) 2009-01-02
EP1559801B1 (de) 2008-11-19
CA2497395A1 (en) 2004-03-18
WO2004022803A1 (ja) 2004-03-18
KR100673401B1 (ko) 2007-01-24
TWI253475B (en) 2006-04-21
JP3754011B2 (ja) 2006-03-08
TW200404905A (en) 2004-04-01
EP1956104A1 (de) 2008-08-13
EP1559801A1 (de) 2005-08-03
JP2004091907A (ja) 2004-03-25
US20040187984A1 (en) 2004-09-30
EP1918391A3 (de) 2009-01-07
KR20050083668A (ko) 2005-08-26
CA2670068A1 (en) 2004-03-18
EP1953250A1 (de) 2008-08-06
EP1918391A2 (de) 2008-05-07
CA2669987A1 (en) 2004-03-18

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