DE60324830D1 - Metallisches material für elektronisches bauteil, elektronisches bauteil, elektronische einrichtung, verfahren zur bearbeitung von metallischem material, verfahren zur herstellung von elektronischem bauteil und elektronisches optisches bauteil - Google Patents

Metallisches material für elektronisches bauteil, elektronisches bauteil, elektronische einrichtung, verfahren zur bearbeitung von metallischem material, verfahren zur herstellung von elektronischem bauteil und elektronisches optisches bauteil

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Publication number
DE60324830D1
DE60324830D1 DE60324830T DE60324830T DE60324830D1 DE 60324830 D1 DE60324830 D1 DE 60324830D1 DE 60324830 T DE60324830 T DE 60324830T DE 60324830 T DE60324830 T DE 60324830T DE 60324830 D1 DE60324830 D1 DE 60324830D1
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DE
Germany
Prior art keywords
electronic
electronic component
component
metallic film
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60324830T
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English (en)
Inventor
Takashi Ueno
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Department Corp
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Department Corp
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Publication date
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Application filed by Department Corp filed Critical Department Corp
Application granted granted Critical
Publication of DE60324830D1 publication Critical patent/DE60324830D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/01Alloys based on copper with aluminium as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/10Alloys based on copper with silicon as the next major constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233Copper alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Conductive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Physical Vapour Deposition (AREA)
  • Led Device Packages (AREA)
  • Adornments (AREA)
DE60324830T 2002-09-04 2003-09-03 Metallisches material für elektronisches bauteil, elektronisches bauteil, elektronische einrichtung, verfahren zur bearbeitung von metallischem material, verfahren zur herstellung von elektronischem bauteil und elektronisches optisches bauteil Expired - Lifetime DE60324830D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002258690A JP3754011B2 (ja) 2002-09-04 2002-09-04 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法、電子部品の製造方法及び電子光学部品
PCT/JP2003/011248 WO2004022803A1 (ja) 2002-09-04 2003-09-03 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法、電子部品の製造方法及び電子光学部品

Publications (1)

Publication Number Publication Date
DE60324830D1 true DE60324830D1 (de) 2009-01-02

Family

ID=31973037

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60324830T Expired - Lifetime DE60324830D1 (de) 2002-09-04 2003-09-03 Metallisches material für elektronisches bauteil, elektronisches bauteil, elektronische einrichtung, verfahren zur bearbeitung von metallischem material, verfahren zur herstellung von elektronischem bauteil und elektronisches optisches bauteil

Country Status (10)

Country Link
US (1) US20040187984A1 (de)
EP (4) EP1956104A1 (de)
JP (1) JP3754011B2 (de)
KR (1) KR100673401B1 (de)
CN (1) CN1318626C (de)
AT (1) ATE414801T1 (de)
CA (3) CA2497395A1 (de)
DE (1) DE60324830D1 (de)
TW (1) TWI253475B (de)
WO (1) WO2004022803A1 (de)

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US7642552B2 (en) 2007-01-12 2010-01-05 Tohoku University Liquid crystal display device and manufacturing method therefor
US7633164B2 (en) 2007-04-10 2009-12-15 Tohoku University Liquid crystal display device and manufacturing method therefor
US7782413B2 (en) 2007-05-09 2010-08-24 Tohoku University Liquid crystal display device and manufacturing method therefor
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KR101570556B1 (ko) * 2008-08-05 2015-11-19 후루카와 덴키 고교 가부시키가이샤 전기·전자부품용 동합금 재료의 제조방법
WO2010016428A1 (ja) * 2008-08-05 2010-02-11 古河電気工業株式会社 電気・電子部品用銅合金材
JP5571887B2 (ja) 2008-08-19 2014-08-13 アルティアム サービシズ リミテッド エルエルシー 液晶表示装置及びその製造方法
US8790549B2 (en) 2009-04-10 2014-07-29 Hitachi, Ltd. Electronic component provided with Cu—Al—Co-based alloy electrode or wiring
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WO2012048460A1 (zh) * 2010-10-13 2012-04-19 大连理工大学 低电阻率高热稳定性的Cu-Ni-Mo合金薄膜及其制备工艺
EP2649215A1 (de) * 2010-12-08 2013-10-16 Galleon International Corporation Harte nitridbeschichtungen mit geringer reibung
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CN102978429B (zh) * 2012-11-07 2014-12-10 江苏金源锻造股份有限公司 一种制造支架的铜合金
CN102978431B (zh) * 2012-11-07 2014-07-30 江苏金源锻造股份有限公司 一种用于引线支架的铜铁合金的制造方法
CN102978432B (zh) * 2012-11-07 2014-12-10 江苏金源锻造股份有限公司 一种用于半导体器件的引线支架
WO2014185301A1 (ja) * 2013-05-13 2014-11-20 株式会社アルバック 搭載装置、その製造方法、その製造方法に用いるスパッタリングターゲット
DE112014006173T5 (de) * 2014-01-15 2016-09-29 Epcos Ag Elektroakustisches Filter und Verfahren zum Herstellen eines elektroakustischen Filters
JP6645229B2 (ja) * 2016-02-05 2020-02-14 凸版印刷株式会社 導電性基材、配線付きカラーフィルタ、および液晶ディスプレイ
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Also Published As

Publication number Publication date
US20040187984A1 (en) 2004-09-30
CA2669987A1 (en) 2004-03-18
WO2004022803A1 (ja) 2004-03-18
JP2004091907A (ja) 2004-03-25
CA2497395A1 (en) 2004-03-18
EP1559801A1 (de) 2005-08-03
EP1918391A2 (de) 2008-05-07
CN1678765A (zh) 2005-10-05
TW200404905A (en) 2004-04-01
EP1956104A1 (de) 2008-08-13
JP3754011B2 (ja) 2006-03-08
EP1953250A1 (de) 2008-08-06
CN1318626C (zh) 2007-05-30
KR20050083668A (ko) 2005-08-26
ATE414801T1 (de) 2008-12-15
TWI253475B (en) 2006-04-21
EP1918391A3 (de) 2009-01-07
KR100673401B1 (ko) 2007-01-24
CA2670068A1 (en) 2004-03-18
EP1559801A4 (de) 2005-11-30
EP1559801B1 (de) 2008-11-19

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