ATE387928T1 - Katheterspitze - Google Patents

Katheterspitze

Info

Publication number
ATE387928T1
ATE387928T1 AT04811126T AT04811126T ATE387928T1 AT E387928 T1 ATE387928 T1 AT E387928T1 AT 04811126 T AT04811126 T AT 04811126T AT 04811126 T AT04811126 T AT 04811126T AT E387928 T1 ATE387928 T1 AT E387928T1
Authority
AT
Austria
Prior art keywords
trench
semiconductor substrate
forming
filling material
hardmask layer
Prior art date
Application number
AT04811126T
Other languages
English (en)
Inventor
Thomas Mchale
Jan Weber
Original Assignee
Boston Scient Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boston Scient Ltd filed Critical Boston Scient Ltd
Application granted granted Critical
Publication of ATE387928T1 publication Critical patent/ATE387928T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H01L21/76235Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/95Instruments specially adapted for placement or removal of stents or stent-grafts
    • A61F2/958Inflatable balloons for placing stents or stent-grafts
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/0009Making of catheters or other medical or surgical tubes
    • A61M25/001Forming the tip of a catheter, e.g. bevelling process, join or taper
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/0067Catheters; Hollow probes characterised by the distal end, e.g. tips
    • A61M25/0068Static characteristics of the catheter tip, e.g. shape, atraumatic tip, curved tip or tip structure
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/0067Catheters; Hollow probes characterised by the distal end, e.g. tips
    • A61M25/008Strength or flexibility characteristics of the catheter tip
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/10Balloon catheters
    • A61M25/1027Making of balloon catheters
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/95Instruments specially adapted for placement or removal of stents or stent-grafts
    • A61F2/958Inflatable balloons for placing stents or stent-grafts
    • A61F2002/9583Means for holding the stent on the balloon, e.g. using protrusions, adhesives or an outer sleeve
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2250/00Special features of prostheses classified in groups A61F2/00 - A61F2/26 or A61F2/82 or A61F9/00 or A61F11/00 or subgroups thereof
    • A61F2250/0058Additional features; Implant or prostheses properties not otherwise provided for
    • A61F2250/0096Markers and sensors for detecting a position or changes of a position of an implant, e.g. RF sensors, ultrasound markers
    • A61F2250/0098Markers and sensors for detecting a position or changes of a position of an implant, e.g. RF sensors, ultrasound markers radio-opaque, e.g. radio-opaque markers
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/10Balloon catheters
    • A61M2025/1043Balloon catheters with special features or adapted for special applications
    • A61M2025/1079Balloon catheters with special features or adapted for special applications having radio-opaque markers in the region of the balloon
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/10Balloon catheters
    • A61M2025/1043Balloon catheters with special features or adapted for special applications
    • A61M2025/1093Balloon catheters with special features or adapted for special applications having particular tip characteristics
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M2205/00General characteristics of the apparatus
    • A61M2205/32General characteristics of the apparatus with radio-opaque indicia
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/0043Catheters; Hollow probes characterised by structural features
    • A61M25/005Catheters; Hollow probes characterised by structural features with embedded materials for reinforcement, e.g. wires, coils, braids
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/0043Catheters; Hollow probes characterised by structural features
    • A61M25/0054Catheters; Hollow probes characterised by structural features with regions for increasing flexibility
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/0067Catheters; Hollow probes characterised by the distal end, e.g. tips
    • A61M25/0068Static characteristics of the catheter tip, e.g. shape, atraumatic tip, curved tip or tip structure
    • A61M25/0069Tip not integral with tube
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/01Introducing, guiding, advancing, emplacing or holding catheters
    • A61M25/0105Steering means as part of the catheter or advancing means; Markers for positioning
    • A61M25/0108Steering means as part of the catheter or advancing means; Markers for positioning using radio-opaque or ultrasound markers
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M25/00Catheters; Hollow probes
    • A61M25/01Introducing, guiding, advancing, emplacing or holding catheters
    • A61M25/0105Steering means as part of the catheter or advancing means; Markers for positioning
    • A61M25/0127Magnetic means; Magnetic markers

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Veterinary Medicine (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Anesthesiology (AREA)
  • Pulmonology (AREA)
  • Hematology (AREA)
  • Biophysics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cardiology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Oral & Maxillofacial Surgery (AREA)
  • Transplantation (AREA)
  • Vascular Medicine (AREA)
  • Child & Adolescent Psychology (AREA)
  • Element Separation (AREA)
  • Media Introduction/Drainage Providing Device (AREA)
AT04811126T 2004-01-29 2004-11-17 Katheterspitze ATE387928T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/767,657 US7118987B2 (en) 2004-01-29 2004-01-29 Method of achieving improved STI gap fill with reduced stress

Publications (1)

Publication Number Publication Date
ATE387928T1 true ATE387928T1 (de) 2008-03-15

Family

ID=34807711

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04811126T ATE387928T1 (de) 2004-01-29 2004-11-17 Katheterspitze

Country Status (6)

Country Link
US (1) US7118987B2 (de)
CN (2) CN1324673C (de)
AT (1) ATE387928T1 (de)
DE (1) DE602004012323T3 (de)
ES (1) ES2302071T5 (de)
TW (1) TWI278960B (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100593673B1 (ko) * 2004-10-27 2006-06-28 삼성전자주식회사 반도체 장치의 제조 방법 및 이를 이용한 반도체 장치의 소자 분리막 제조 방법
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
KR100620707B1 (ko) * 2004-12-31 2006-09-13 동부일렉트로닉스 주식회사 반도체 소자의 sti 형성 방법
JP2006237509A (ja) * 2005-02-28 2006-09-07 Toshiba Corp 半導体装置
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US20070020877A1 (en) * 2005-07-21 2007-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation structure and method of fabricating the same
KR100745987B1 (ko) * 2005-08-09 2007-08-06 삼성전자주식회사 반도체 소자의 트렌치 소자 분리 영역 제조 방법
KR100688750B1 (ko) * 2005-08-18 2007-03-02 동부일렉트로닉스 주식회사 섀로우 트렌치 아이솔레이션의 제조방법
US8501632B2 (en) * 2005-12-20 2013-08-06 Infineon Technologies Ag Methods of fabricating isolation regions of semiconductor devices and structures thereof
KR100713924B1 (ko) * 2005-12-23 2007-05-07 주식회사 하이닉스반도체 돌기형 트랜지스터 및 그의 형성방법
KR100724196B1 (ko) * 2005-12-28 2007-05-31 동부일렉트로닉스 주식회사 반도체 소자의 sti 갭필 산화막 제조방법
US7767515B2 (en) * 2006-02-27 2010-08-03 Synopsys, Inc. Managing integrated circuit stress using stress adjustment trenches
US8936995B2 (en) 2006-03-01 2015-01-20 Infineon Technologies Ag Methods of fabricating isolation regions of semiconductor devices and structures thereof
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US7884030B1 (en) 2006-04-21 2011-02-08 Advanced Micro Devices, Inc. and Spansion LLC Gap-filling with uniform properties
US7968425B2 (en) 2006-07-14 2011-06-28 Micron Technology, Inc. Isolation regions
EP2062290B1 (de) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defektreduzierung durch kontrolle des aspektverhältnisses
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
KR100868654B1 (ko) * 2006-12-27 2008-11-12 동부일렉트로닉스 주식회사 반도체 소자의 트렌치 형성 방법
KR100960477B1 (ko) * 2007-02-16 2010-06-01 주식회사 하이닉스반도체 반도체 소자의 sti 형성 방법
KR100842749B1 (ko) * 2007-03-27 2008-07-01 주식회사 하이닉스반도체 반도체소자의 트렌치 소자분리막 형성방법
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8927353B2 (en) * 2007-05-07 2015-01-06 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method of forming the same
JP2008306139A (ja) * 2007-06-11 2008-12-18 Elpida Memory Inc 半導体装置の素子分離構造の形成方法、半導体装置の素子分離構造及び半導体記憶装置
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
KR100894101B1 (ko) * 2007-09-07 2009-04-20 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
US8344242B2 (en) 2007-09-07 2013-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-junction solar cells
CN101442020B (zh) * 2007-11-21 2010-07-28 中芯国际集成电路制造(上海)有限公司 一种可避免氮氧化硅残留的沟槽隔离结构制作方法
KR100940661B1 (ko) * 2007-12-24 2010-02-05 주식회사 동부하이텍 플래시 메모리 소자의 제조 방법
KR100955677B1 (ko) 2007-12-27 2010-05-06 주식회사 하이닉스반도체 반도체 메모리소자의 소자분리막 형성방법
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
KR20090128902A (ko) * 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 이중 하드마스크막을 이용한 씨모스이미지센서 제조 방법
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US7674684B2 (en) * 2008-07-23 2010-03-09 Applied Materials, Inc. Deposition methods for releasing stress buildup
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
JP2010098293A (ja) * 2008-09-22 2010-04-30 Elpida Memory Inc 半導体装置
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN101740460B (zh) * 2008-11-14 2012-02-29 中芯国际集成电路制造(北京)有限公司 浅沟槽隔离区的形成方法及nmos晶体管的制造方法
JP4886021B2 (ja) * 2008-12-16 2012-02-29 エルピーダメモリ株式会社 半導体装置及びその製造方法
WO2010114956A1 (en) 2009-04-02 2010-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Devices formed from a non-polar plane of a crystalline material and method of making the same
CN101872739B (zh) * 2009-04-23 2013-10-23 上海华虹Nec电子有限公司 沟槽的填充方法
CN102005373B (zh) * 2009-08-28 2012-08-22 中芯国际集成电路制造(上海)有限公司 栅极及功率场效应管的制造方法
JP5602414B2 (ja) * 2009-11-05 2014-10-08 ピーエスフォー ルクスコ エスエイアールエル 半導体装置の製造方法および半導体装置
KR101053647B1 (ko) * 2009-12-29 2011-08-02 주식회사 하이닉스반도체 반도체 장치 제조 방법
US8765561B2 (en) 2011-06-06 2014-07-01 United Microelectronics Corp. Method for fabricating semiconductor device
WO2013004236A1 (en) 2011-07-01 2013-01-10 Coloplast A/S A catheter with a balloon
US8921944B2 (en) 2011-07-19 2014-12-30 United Microelectronics Corp. Semiconductor device
US8647941B2 (en) 2011-08-17 2014-02-11 United Microelectronics Corp. Method of forming semiconductor device
JP5977002B2 (ja) * 2011-08-25 2016-08-24 東京エレクトロン株式会社 トレンチの埋め込み方法および半導体集積回路装置の製造方法
US8691659B2 (en) 2011-10-26 2014-04-08 United Microelectronics Corp. Method for forming void-free dielectric layer
US8679938B2 (en) 2012-02-06 2014-03-25 International Business Machines Corporation Shallow trench isolation for device including deep trench capacitors
US8829642B2 (en) 2012-03-29 2014-09-09 The Institute of Microelectronics, Chinese Academy of Science Semiconductor device and method for manufacturing the same
CN103367395B (zh) * 2012-03-29 2016-09-21 中国科学院微电子研究所 半导体器件及其制造方法
US8835243B2 (en) 2012-05-04 2014-09-16 United Microelectronics Corp. Semiconductor process
US8772120B2 (en) 2012-05-24 2014-07-08 United Microelectronics Corp. Semiconductor process
US8951876B2 (en) 2012-06-20 2015-02-10 United Microelectronics Corp. Semiconductor device and manufacturing method thereof
US9059243B2 (en) 2012-06-25 2015-06-16 International Business Machines Corporation Shallow trench isolation structures
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
US9431487B2 (en) 2013-01-11 2016-08-30 International Business Machines Corporation Graphene layer transfer
US8895396B1 (en) 2013-07-11 2014-11-25 United Microelectronics Corp. Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures
US9362338B2 (en) 2014-03-03 2016-06-07 Sandisk Technologies Inc. Vertical thin film transistors in non-volatile storage systems
US9679917B2 (en) 2014-12-23 2017-06-13 International Business Machines Corporation Semiconductor structures with deep trench capacitor and methods of manufacture
FR3033081B1 (fr) * 2015-02-24 2017-03-31 Commissariat Energie Atomique Procede de modification de l'etat de contrainte d'une structure semi-conductrice a etages de canal de transistor
US9847245B1 (en) * 2016-06-16 2017-12-19 Samsung Electronics Co., Ltd. Filling processes
US10141306B2 (en) 2017-01-27 2018-11-27 Qualcomm Incorporated Systems, methods, and apparatus for improved finFETs
CN110364475A (zh) * 2018-04-09 2019-10-22 无锡华润上华科技有限公司 一种半导体器件的制造方法
CN110767740B (zh) * 2018-07-27 2021-10-15 无锡华润上华科技有限公司 半导体器件及其制造方法
US11201122B2 (en) 2018-09-27 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating semiconductor device with reduced warpage and better trench filling performance
TWI703673B (zh) * 2018-09-27 2020-09-01 台灣積體電路製造股份有限公司 半導體裝置的製造方法以及半導體裝置
CN110707045B (zh) * 2018-10-09 2023-05-12 联华电子股份有限公司 一种制作半导体元件的方法
CN111446167A (zh) * 2020-03-16 2020-07-24 绍兴同芯成集成电路有限公司 一种利用聚合物隔离层生成多阶梯状沟槽晶体管的工艺
US11562923B2 (en) 2020-05-05 2023-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor arrangement including a first electrical insulator layer and a second electrical insulator layer and method of making

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW388100B (en) * 1997-02-18 2000-04-21 Hitachi Ulsi Eng Corp Semiconductor deivce and process for producing the same
JP2000082808A (ja) * 1998-09-04 2000-03-21 Toshiba Corp 半導体装置及びその製造方法
US6221733B1 (en) * 1998-11-13 2001-04-24 Lattice Semiconductor Corporation Reduction of mechanical stress in shallow trench isolation process
KR100322531B1 (ko) * 1999-01-11 2002-03-18 윤종용 파임방지막을 이용하는 반도체소자의 트랜치 소자분리방법 및이를 이용한 반도체소자
US6297128B1 (en) * 1999-01-29 2001-10-02 Vantis Corporation Process for manufacturing shallow trenches filled with dielectric material having low mechanical stress
KR100354439B1 (ko) * 2000-12-08 2002-09-28 삼성전자 주식회사 트렌치 소자 분리막 형성 방법
KR100568100B1 (ko) * 2001-03-05 2006-04-05 삼성전자주식회사 트렌치형 소자 분리막 형성 방법
KR100512167B1 (ko) * 2001-03-12 2005-09-02 삼성전자주식회사 트렌치 소자 분리형 반도체 장치 및 트렌치형 소자 분리막형성방법
US6693050B1 (en) * 2003-05-06 2004-02-17 Applied Materials Inc. Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques

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CN1649122A (zh) 2005-08-03
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JP4717831B2 (ja) 2011-07-06
DE602004012323T2 (de) 2009-03-19
CN1324673C (zh) 2007-07-04
US20050170606A1 (en) 2005-08-04
US7118987B2 (en) 2006-10-10
TW200525690A (en) 2005-08-01
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ES2302071T3 (es) 2008-07-01
DE602004012323T3 (de) 2017-09-07

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