ATE349481T1 - Material für isolierfilm, decklack für isolierfilm und isolierfilm und damit hergestellte halbleitervorrichtung - Google Patents

Material für isolierfilm, decklack für isolierfilm und isolierfilm und damit hergestellte halbleitervorrichtung

Info

Publication number
ATE349481T1
ATE349481T1 AT01967765T AT01967765T ATE349481T1 AT E349481 T1 ATE349481 T1 AT E349481T1 AT 01967765 T AT01967765 T AT 01967765T AT 01967765 T AT01967765 T AT 01967765T AT E349481 T1 ATE349481 T1 AT E349481T1
Authority
AT
Austria
Prior art keywords
insulating film
film
semiconductor device
top coat
device made
Prior art date
Application number
AT01967765T
Other languages
English (en)
Inventor
Takashi Enoki
Nobuhiro Higashida
Shinagawa-Ku Chome
Yuichi Ishida
Shinagawa-Ku
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Application granted granted Critical
Publication of ATE349481T1 publication Critical patent/ATE349481T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/38—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes condensation products of aldehydes with amines or amides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/48—Polymers modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G81/00—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2377/00—Characterised by the use of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Derivatives of such polymers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Organic Insulating Materials (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Insulating Bodies (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT01967765T 2000-09-22 2001-09-20 Material für isolierfilm, decklack für isolierfilm und isolierfilm und damit hergestellte halbleitervorrichtung ATE349481T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000288271 2000-09-22
JP2000401237A JP3492316B2 (ja) 2000-09-22 2000-12-28 絶縁膜用材料、絶縁膜用コーティングワニス及びこれらを用いた絶縁膜並びに半導体装置

Publications (1)

Publication Number Publication Date
ATE349481T1 true ATE349481T1 (de) 2007-01-15

Family

ID=26600496

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01967765T ATE349481T1 (de) 2000-09-22 2001-09-20 Material für isolierfilm, decklack für isolierfilm und isolierfilm und damit hergestellte halbleitervorrichtung

Country Status (9)

Country Link
US (1) US7049371B2 (de)
EP (1) EP1333050B1 (de)
JP (1) JP3492316B2 (de)
KR (1) KR100787265B1 (de)
CN (1) CN1231525C (de)
AT (1) ATE349481T1 (de)
DE (1) DE60125575T2 (de)
TW (1) TWI277629B (de)
WO (1) WO2002024788A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002105202A (ja) * 2000-10-03 2002-04-10 Daikin Ind Ltd ビス（３−アミノ−５−アリール−４−ヒドロキシアリール）フルオロアルカン誘導体
US20050075696A1 (en) 2003-10-02 2005-04-07 Medtronic, Inc. Inductively rechargeable external energy source, charger, system and method for a transcutaneous inductive charger for an implantable medical device
JP4520724B2 (ja) * 2003-11-05 2010-08-11 ダイセル化学工業株式会社 プレポリマー組成物の製造法、及び絶縁膜の製造法
JP5030425B2 (ja) * 2004-01-20 2012-09-19 旭化成イーマテリアルズ株式会社 樹脂及び樹脂組成物
JP2005255612A (ja) * 2004-03-11 2005-09-22 Sumitomo Bakelite Co Ltd エチニル基を有する芳香族ジカルボン酸エステル及びその製造方法
CN100481378C (zh) 2004-05-21 2009-04-22 Jsr株式会社 层叠体及半导体装置
KR20070097409A (ko) * 2004-09-30 2007-10-04 스미토모 베이클라이트 가부시키가이샤 수지 조성물, 폴리이미드 수지 조성물, 폴리벤조옥사졸 수지 조성물, 바니시, 수지막 및 이를 이용한 반도체 장치
EP1832619A4 (de) * 2004-12-28 2009-04-29 Sumitomo Bakelite Co Benzoxazolharzvorstufe, polybenzoxazolharz, harzfilm und halbleitervorrichtung
US8178631B2 (en) * 2005-09-21 2012-05-15 Sumitomo Bakelite Company, Ltd. Resin composition, varnish, resin film and semiconductor device
TWI407255B (zh) * 2005-09-22 2013-09-01 Hitachi Chem Dupont Microsys 負片型感光性樹脂組成物、圖案形成方法以及電子零件
WO2007148384A1 (ja) * 2006-06-20 2007-12-27 Hitachi Chemical Dupont Microsystems Ltd. ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品
JP4911454B2 (ja) 2006-09-19 2012-04-04 富士フイルム株式会社 ポリベンゾオキサゾール前駆体、それを用いた感光性樹脂組成物及び半導体装置の製造方法
KR101438857B1 (ko) * 2007-03-12 2014-09-05 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 감광성 수지 조성물, 그 수지 조성물을 이용한 패턴 경화막의 제조방법 및 전자부품
JP5176872B2 (ja) * 2007-10-29 2013-04-03 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パタ−ンの製造方法及び電子部品
KR101138800B1 (ko) * 2009-11-26 2012-04-24 제일모직주식회사 고내열성 투명 고분자 수지 및 이의 제조방법
JP2013544680A (ja) * 2010-11-01 2013-12-19 サン ケミカル コーポレイション オフセットリトグラフ印刷用インキのための湿し水
US8883894B2 (en) * 2011-03-03 2014-11-11 Kaneka Corporation Insulating film and printed wiring board provided with insulating film
CN102925024B (zh) * 2012-11-15 2015-07-08 中国科学院深圳先进技术研究院 绝缘膜用组合物及三维垂直孔的孔壁上形成绝缘膜的方法
US9620378B1 (en) * 2015-12-24 2017-04-11 Jsr Corporation Composition for film formation, film, production method of patterned substrate, and compound
KR101906064B1 (ko) 2017-07-25 2018-10-08 송기용 저온경화 가능한 유기절연체 조성물 및 이를 이용한 유기절연막 제조방법
CN114716858B (zh) * 2022-04-24 2022-11-11 住井科技(深圳)有限公司 低介电耐电涌清漆及绝缘电线

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883452A (en) * 1973-05-15 1975-05-13 Du Pont Composition of polyimide powder and polyformaldehyde
IT1243363B (it) * 1990-07-25 1994-06-10 Intercast Europ Spa Struttura di visore a stratificazione multipla, resistente all'urto ed all'appannamento
JP2531906B2 (ja) * 1991-09-13 1996-09-04 インターナショナル・ビジネス・マシーンズ・コーポレイション 発泡重合体
US5236980A (en) * 1992-06-26 1993-08-17 The University Of Rochester Polyazomethine complexes and method for making optical devices and other materials therewith
US5597890A (en) 1993-11-01 1997-01-28 Research Corporation Technologies, Inc. Conjugated polymer exciplexes and applications thereof
JP2947136B2 (ja) * 1995-09-14 1999-09-13 日本電気株式会社 光増幅器
JP3714848B2 (ja) * 1999-03-31 2005-11-09 住友ベークライト株式会社 有機絶縁膜材料、有機絶縁膜及びその製造方法
JP2001283638A (ja) * 2000-03-30 2001-10-12 Sumitomo Bakelite Co Ltd 絶縁材用樹脂組成物及びこれを用いた絶縁材
JP3681106B2 (ja) * 2000-04-07 2005-08-10 住友ベークライト株式会社 有機絶縁膜材料および有機絶縁膜

Also Published As

Publication number Publication date
JP2002167442A (ja) 2002-06-11
EP1333050A4 (de) 2005-03-02
KR100787265B1 (ko) 2007-12-21
DE60125575T2 (de) 2007-04-19
DE60125575D1 (de) 2007-02-08
KR20040030416A (ko) 2004-04-09
US7049371B2 (en) 2006-05-23
EP1333050B1 (de) 2006-12-27
TWI277629B (en) 2007-04-01
CN1461323A (zh) 2003-12-10
CN1231525C (zh) 2005-12-14
JP3492316B2 (ja) 2004-02-03
WO2002024788A1 (fr) 2002-03-28
EP1333050A1 (de) 2003-08-06
US20040002572A1 (en) 2004-01-01

Similar Documents

Publication Publication Date Title
ATE349481T1 (de) Material für isolierfilm, decklack für isolierfilm und isolierfilm und damit hergestellte halbleitervorrichtung
US6225238B1 (en) Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
CN104141112B (zh) 用于电子器件或其他物品上的涂层中的混合层
Maier Low dielectric constant polymers for microelectronics
WO2003063205A3 (en) Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
US8178390B2 (en) Semiconductor component and production method
WO2003019651A3 (en) Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
TWI335072B (en) Repair and restoration of damaged dielectric materials and films
KR960019581A (ko) 집적회로용 절연체와 그 제조 공정
US20160226023A1 (en) Interposer layer for enhancing adhesive attraction of poly(p-xylylene) film to substrate
TW200848257A (en) Prepreg and laminate
US20030017635A1 (en) Low dielectric constant polyorganosilicon materials generated from polycarbosilanes
US5789325A (en) Coating electronic substrates with silica derived from polycarbosilane
JP2015086253A (ja) 熱硬化性樹脂組成物、これを用いたプリプレグ、樹脂付フィルム、積層板、プリント配線板及び半導体パッケージ
TW200608519A (en) Semiconductor device and manufacturing method therefor
CN101021680B (zh) 形成曝光光线阻挡膜的材料、多层互连结构及其制造方法以及半导体器件
Kim et al. Controlling the gate dielectric properties of vinyl-addition polynorbornene copolymers via thiol–ene click chemistry for organic field-effect transistors
US5976703A (en) Material and method for planarization of substrate
KR100315936B1 (ko) 집적회로장치및집적회로패키징장치
US6764718B2 (en) Method for forming thin film from electrically insulating resin composition
US20090127544A1 (en) Method for producing organic electronic devices on solvent-and/or temperature-sensitive plastic substrates
Kim et al. A flexible insulator of a hollow SiO 2 sphere and polyimide hybrid for flexible OLEDs
CN101044189B (zh) 耐热性树脂
Jang et al. Correlation of residual stress and adhesion on copper by the effect of chemical structure of polyimides for copper‐clad laminates
WO2002024785A1 (fr) Precurseur de resine resistant a la chaleur, resine resistante a la chaleur, couche isolante isolant et dispositif semiconducteur

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties