WO2002024788A1 - Materiau et vernis pour film isolant, film isolant et dispositif a semiconducteurs faisant appel a ce materiau et a ce vernis - Google Patents
Materiau et vernis pour film isolant, film isolant et dispositif a semiconducteurs faisant appel a ce materiau et a ce vernis Download PDFInfo
- Publication number
- WO2002024788A1 WO2002024788A1 PCT/JP2001/008210 JP0108210W WO0224788A1 WO 2002024788 A1 WO2002024788 A1 WO 2002024788A1 JP 0108210 W JP0108210 W JP 0108210W WO 0224788 A1 WO0224788 A1 WO 0224788A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulating film
- layer
- semiconductor device
- coating
- same
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 5
- 239000011248 coating agent Substances 0.000 title abstract 3
- 238000000576 coating method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002966 varnish Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 3
- 239000004952 Polyamide Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000006482 condensation reaction Methods 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- 238000004132 cross linking Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 229920002647 polyamide Polymers 0.000 abstract 1
- 229920002577 polybenzoxazole Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/38—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes condensation products of aldehydes with amines or amides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/48—Polymers modified by chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G81/00—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2377/00—Characterised by the use of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Derivatives of such polymers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Organic Insulating Materials (AREA)
- Insulating Bodies (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01967765A EP1333050B1 (en) | 2000-09-22 | 2001-09-20 | Material for insulating film, coating varnish for insulating film, and insulating film and semiconductor device using the same |
DE60125575T DE60125575T2 (de) | 2000-09-22 | 2001-09-20 | Material für isolierfilm, decklack für isolierfilm und isolierfilm und damit hergestellte halbleitervorrichtung |
KR1020037004154A KR100787265B1 (ko) | 2000-09-22 | 2001-09-20 | 절연막용 재료, 절연막용 코팅 니스 및 이들을 이용한절연막 및 반도체 장치 |
US10/380,872 US7049371B2 (en) | 2000-09-22 | 2001-09-20 | Material for an insulating film, coating varnish for an insulating film, and insulating film and semiconductor device using the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-288271 | 2000-09-22 | ||
JP2000288271 | 2000-09-22 | ||
JP2000-401237 | 2000-12-28 | ||
JP2000401237A JP3492316B2 (ja) | 2000-09-22 | 2000-12-28 | 絶縁膜用材料、絶縁膜用コーティングワニス及びこれらを用いた絶縁膜並びに半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002024788A1 true WO2002024788A1 (fr) | 2002-03-28 |
Family
ID=26600496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/008210 WO2002024788A1 (fr) | 2000-09-22 | 2001-09-20 | Materiau et vernis pour film isolant, film isolant et dispositif a semiconducteurs faisant appel a ce materiau et a ce vernis |
Country Status (9)
Country | Link |
---|---|
US (1) | US7049371B2 (ja) |
EP (1) | EP1333050B1 (ja) |
JP (1) | JP3492316B2 (ja) |
KR (1) | KR100787265B1 (ja) |
CN (1) | CN1231525C (ja) |
AT (1) | ATE349481T1 (ja) |
DE (1) | DE60125575T2 (ja) |
TW (1) | TWI277629B (ja) |
WO (1) | WO2002024788A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8337982B2 (en) | 2004-12-28 | 2012-12-25 | Sumitomo Bakelite Co., Ltd. | Benzoxazole resin precursor, polybenzoxazole resin, resin film and semiconductor device |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002105202A (ja) * | 2000-10-03 | 2002-04-10 | Daikin Ind Ltd | ビス(3−アミノ−5−アリール−4−ヒドロキシアリール)フルオロアルカン誘導体 |
US20050075696A1 (en) | 2003-10-02 | 2005-04-07 | Medtronic, Inc. | Inductively rechargeable external energy source, charger, system and method for a transcutaneous inductive charger for an implantable medical device |
JP4520724B2 (ja) * | 2003-11-05 | 2010-08-11 | ダイセル化学工業株式会社 | プレポリマー組成物の製造法、及び絶縁膜の製造法 |
WO2005068535A1 (ja) * | 2004-01-20 | 2005-07-28 | Asahi Kasei Emd Corporation | 樹脂及び樹脂組成物 |
JP2005255612A (ja) * | 2004-03-11 | 2005-09-22 | Sumitomo Bakelite Co Ltd | エチニル基を有する芳香族ジカルボン酸エステル及びその製造方法 |
WO2005114724A1 (ja) | 2004-05-21 | 2005-12-01 | Jsr Corporation | 積層体および半導体装置 |
EP1813637A4 (en) * | 2004-09-30 | 2011-08-31 | Sumitomo Bakelite Co | RESIN COMPOSITION, POLYIMIDE RESIN COMPOSITION, POLYBENZOZAZOL RESIN COMPOSITION, RESIN FILMS, AND SEMICONDUCTOR EQUIPMENT MANUFACTURED THEREWITH |
US8178631B2 (en) * | 2005-09-21 | 2012-05-15 | Sumitomo Bakelite Company, Ltd. | Resin composition, varnish, resin film and semiconductor device |
TWI407255B (zh) * | 2005-09-22 | 2013-09-01 | Hitachi Chem Dupont Microsys | 負片型感光性樹脂組成物、圖案形成方法以及電子零件 |
US20100159217A1 (en) * | 2006-06-20 | 2010-06-24 | Hitachi Chemical Dupont Microsystems, Ltd | Negative-type photosensitive resin composition, method for forming patterns, and electronic parts |
JP4911454B2 (ja) * | 2006-09-19 | 2012-04-04 | 富士フイルム株式会社 | ポリベンゾオキサゾール前駆体、それを用いた感光性樹脂組成物及び半導体装置の製造方法 |
WO2008111470A1 (ja) * | 2007-03-12 | 2008-09-18 | Hitachi Chemical Dupont Microsystems, Ltd. | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
JP5176872B2 (ja) * | 2007-10-29 | 2013-04-03 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パタ−ンの製造方法及び電子部品 |
KR101138800B1 (ko) * | 2009-11-26 | 2012-04-24 | 제일모직주식회사 | 고내열성 투명 고분자 수지 및 이의 제조방법 |
CN103260890B (zh) * | 2010-11-01 | 2016-05-18 | 太阳化学公司 | 平版胶印油墨用的润版液 |
JP6006716B2 (ja) * | 2011-03-03 | 2016-10-12 | 株式会社カネカ | 新規な絶縁膜及び絶縁膜付きプリント配線板 |
CN102925024B (zh) * | 2012-11-15 | 2015-07-08 | 中国科学院深圳先进技术研究院 | 绝缘膜用组合物及三维垂直孔的孔壁上形成绝缘膜的方法 |
US9620378B1 (en) * | 2015-12-24 | 2017-04-11 | Jsr Corporation | Composition for film formation, film, production method of patterned substrate, and compound |
KR101906064B1 (ko) | 2017-07-25 | 2018-10-08 | 송기용 | 저온경화 가능한 유기절연체 조성물 및 이를 이용한 유기절연막 제조방법 |
CN114716858B (zh) * | 2022-04-24 | 2022-11-11 | 住井科技(深圳)有限公司 | 低介电耐电涌清漆及绝缘电线 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995012628A1 (en) * | 1993-11-01 | 1995-05-11 | Research Corporation Technologies, Inc. | Conjugated polymer exciplexes and applications thereof |
JP2000344896A (ja) * | 1999-03-31 | 2000-12-12 | Sumitomo Bakelite Co Ltd | 有機絶縁膜材料、有機絶縁膜及びその製造方法 |
JP2001283638A (ja) * | 2000-03-30 | 2001-10-12 | Sumitomo Bakelite Co Ltd | 絶縁材用樹脂組成物及びこれを用いた絶縁材 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3883452A (en) * | 1973-05-15 | 1975-05-13 | Du Pont | Composition of polyimide powder and polyformaldehyde |
IT1243363B (it) * | 1990-07-25 | 1994-06-10 | Intercast Europ Spa | Struttura di visore a stratificazione multipla, resistente all'urto ed all'appannamento |
JP2531906B2 (ja) * | 1991-09-13 | 1996-09-04 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 発泡重合体 |
US5236980A (en) * | 1992-06-26 | 1993-08-17 | The University Of Rochester | Polyazomethine complexes and method for making optical devices and other materials therewith |
JP2947136B2 (ja) * | 1995-09-14 | 1999-09-13 | 日本電気株式会社 | 光増幅器 |
JP3681106B2 (ja) * | 2000-04-07 | 2005-08-10 | 住友ベークライト株式会社 | 有機絶縁膜材料および有機絶縁膜 |
-
2000
- 2000-12-28 JP JP2000401237A patent/JP3492316B2/ja not_active Expired - Fee Related
-
2001
- 2001-09-20 US US10/380,872 patent/US7049371B2/en not_active Expired - Fee Related
- 2001-09-20 CN CNB018159168A patent/CN1231525C/zh not_active Expired - Fee Related
- 2001-09-20 WO PCT/JP2001/008210 patent/WO2002024788A1/ja active IP Right Grant
- 2001-09-20 EP EP01967765A patent/EP1333050B1/en not_active Expired - Lifetime
- 2001-09-20 AT AT01967765T patent/ATE349481T1/de not_active IP Right Cessation
- 2001-09-20 KR KR1020037004154A patent/KR100787265B1/ko not_active IP Right Cessation
- 2001-09-20 DE DE60125575T patent/DE60125575T2/de not_active Expired - Lifetime
- 2001-09-21 TW TW090123313A patent/TWI277629B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995012628A1 (en) * | 1993-11-01 | 1995-05-11 | Research Corporation Technologies, Inc. | Conjugated polymer exciplexes and applications thereof |
JP2000344896A (ja) * | 1999-03-31 | 2000-12-12 | Sumitomo Bakelite Co Ltd | 有機絶縁膜材料、有機絶縁膜及びその製造方法 |
JP2001283638A (ja) * | 2000-03-30 | 2001-10-12 | Sumitomo Bakelite Co Ltd | 絶縁材用樹脂組成物及びこれを用いた絶縁材 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8337982B2 (en) | 2004-12-28 | 2012-12-25 | Sumitomo Bakelite Co., Ltd. | Benzoxazole resin precursor, polybenzoxazole resin, resin film and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2002167442A (ja) | 2002-06-11 |
KR100787265B1 (ko) | 2007-12-21 |
US7049371B2 (en) | 2006-05-23 |
CN1461323A (zh) | 2003-12-10 |
EP1333050A1 (en) | 2003-08-06 |
TWI277629B (en) | 2007-04-01 |
DE60125575D1 (de) | 2007-02-08 |
KR20040030416A (ko) | 2004-04-09 |
US20040002572A1 (en) | 2004-01-01 |
EP1333050A4 (en) | 2005-03-02 |
EP1333050B1 (en) | 2006-12-27 |
JP3492316B2 (ja) | 2004-02-03 |
CN1231525C (zh) | 2005-12-14 |
ATE349481T1 (de) | 2007-01-15 |
DE60125575T2 (de) | 2007-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002024788A1 (fr) | Materiau et vernis pour film isolant, film isolant et dispositif a semiconducteurs faisant appel a ce materiau et a ce vernis | |
WO2000075975A3 (en) | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes | |
JP5015591B2 (ja) | エポキシ樹脂組成物 | |
WO2003063205A3 (en) | Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications | |
CN103650649B (zh) | 粘接膜、使用了该粘接膜的多层印制电路板、及该多层印制电路板的制造方法 | |
CA2162189A1 (en) | Insulator for integrated circuits and process | |
US8440733B2 (en) | Semiconductor component and production method | |
EP1232998A4 (en) | LOW PERMITTIVITY POROUS SILICA FILM, SEMICONDUCTOR DEVICES PROVIDED WITH SUCH FILMS, AND COATING COMPOSITION FOR FORMING SAID FILM | |
WO2003019651A3 (en) | Through-via vertical interconnects, through-via heat sinks and associated fabrication methods | |
WO2002032198A3 (en) | Microelectronic magnetic structure, device including the structure, and methods of forming the structure and device | |
EP1063262A4 (en) | THERMO-CURABLE POLYPHENYLENE ETHER COMPOSITION, HARD RESIN COMPOSITION THEREOF AND LAYER STRUCTURE | |
JPS5550646A (en) | Integrated circuit device | |
EP0825231A3 (en) | Polysilazane-based coating solution for interlayer insulation | |
WO2008044766A1 (fr) | Composition de résine | |
WO2020219852A1 (en) | Phenolic functionalized polyimides and compositions thereof | |
WO2021113415A1 (en) | Low dk copper clad laminate compositions | |
KR960030376A (ko) | 반도체장치의 제조방법 | |
WO2009075079A1 (ja) | 回路板、回路板の製造方法およびカバーレイフィルム | |
MY140754A (en) | Connection board, and multi-layer wiring board, substrate for semiconductor package and semiconductor package using connection board, and manufacturing method thereof | |
CN101044189B (zh) | 耐热性树脂 | |
CN106560484B (zh) | 绝缘材料和具有该绝缘材料的印刷电路板 | |
KR102376112B1 (ko) | 반도체 소자 밀봉용 조성물 및 반도체 소자 밀봉용 필름 | |
EP0860462A3 (en) | Composition and method for the formation of silica thin films | |
WO2002024785A1 (fr) | Precurseur de resine resistant a la chaleur, resine resistante a la chaleur, couche isolante isolant et dispositif semiconducteur | |
WO2004077547A3 (de) | Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN KR SG US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 018159168 Country of ref document: CN Ref document number: 10380872 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020037004154 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001967765 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2001967765 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020037004154 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 2001967765 Country of ref document: EP |