ATE169773T1 - Drei-anschlussklemmen-gategesteuerte halbleiterschalteranordnung mit gleichrichtergate - Google Patents

Drei-anschlussklemmen-gategesteuerte halbleiterschalteranordnung mit gleichrichtergate

Info

Publication number
ATE169773T1
ATE169773T1 AT95906004T AT95906004T ATE169773T1 AT E169773 T1 ATE169773 T1 AT E169773T1 AT 95906004 T AT95906004 T AT 95906004T AT 95906004 T AT95906004 T AT 95906004T AT E169773 T1 ATE169773 T1 AT E169773T1
Authority
AT
Austria
Prior art keywords
silicon
mosfet
silicon carbide
source
drain
Prior art date
Application number
AT95906004T
Other languages
English (en)
Inventor
Bantval Jayant Baliga
Original Assignee
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina State filed Critical Univ North Carolina State
Application granted granted Critical
Publication of ATE169773T1 publication Critical patent/ATE169773T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8122—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electronic Switches (AREA)
AT95906004T 1993-12-28 1994-12-19 Drei-anschlussklemmen-gategesteuerte halbleiterschalteranordnung mit gleichrichtergate ATE169773T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/174,690 US5396085A (en) 1993-12-28 1993-12-28 Silicon carbide switching device with rectifying-gate

Publications (1)

Publication Number Publication Date
ATE169773T1 true ATE169773T1 (de) 1998-08-15

Family

ID=22637136

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95906004T ATE169773T1 (de) 1993-12-28 1994-12-19 Drei-anschlussklemmen-gategesteuerte halbleiterschalteranordnung mit gleichrichtergate

Country Status (7)

Country Link
US (1) US5396085A (de)
EP (1) EP0737365B1 (de)
JP (1) JPH09508492A (de)
AT (1) ATE169773T1 (de)
AU (1) AU1439495A (de)
DE (1) DE69412515T2 (de)
WO (1) WO1995018465A1 (de)

Families Citing this family (153)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
US5543637A (en) * 1994-11-14 1996-08-06 North Carolina State University Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
JPH08204179A (ja) * 1995-01-26 1996-08-09 Fuji Electric Co Ltd 炭化ケイ素トレンチｍｏｓｆｅｔ
JPH08213607A (ja) * 1995-02-08 1996-08-20 Ngk Insulators Ltd 半導体装置およびその製造方法
US5661312A (en) * 1995-03-30 1997-08-26 Motorola Silicon carbide MOSFET
US5962893A (en) * 1995-04-20 1999-10-05 Kabushiki Kaisha Toshiba Schottky tunneling device
JP3458531B2 (ja) * 1995-06-02 2003-10-20 株式会社デンソー 交流発電機
US6140678A (en) * 1995-06-02 2000-10-31 Siliconix Incorporated Trench-gated power MOSFET with protective diode
US6049108A (en) 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
JP3575110B2 (ja) * 1995-06-06 2004-10-13 株式会社デンソー 車両用交流発電機
US6573534B1 (en) 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
FR2738394B1 (fr) * 1995-09-06 1998-06-26 Nippon Denso Co Dispositif a semi-conducteur en carbure de silicium, et son procede de fabrication
US5679966A (en) * 1995-10-05 1997-10-21 North Carolina State University Depleted base transistor with high forward voltage blocking capability
US5877515A (en) * 1995-10-10 1999-03-02 International Rectifier Corporation SiC semiconductor device
DE19610135C1 (de) * 1996-03-14 1997-06-19 Siemens Ag Elektronische Einrichtung, insbesondere zum Schalten elektrischer Ströme, für hohe Sperrspannungen und mit geringen Durchlaßverlusten
SE9601179D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A field controlled semiconductor device of SiC and a method for production thereof
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
US5753938A (en) * 1996-08-08 1998-05-19 North Carolina State University Static-induction transistors having heterojunction gates and methods of forming same
SE9602993D0 (sv) * 1996-08-16 1996-08-16 Abb Research Ltd A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC
US6310385B1 (en) 1997-01-16 2001-10-30 International Rectifier Corp. High band gap layer to isolate wells in high voltage power integrated circuits
US6180958B1 (en) * 1997-02-07 2001-01-30 James Albert Cooper, Jr. Structure for increasing the maximum voltage of silicon carbide power transistors
US6570185B1 (en) * 1997-02-07 2003-05-27 Purdue Research Foundation Structure to reduce the on-resistance of power transistors
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US5831289A (en) * 1997-10-06 1998-11-03 Northrop Grumman Corporation Silicon carbide gate turn-off thyristor arrangement
US6281521B1 (en) 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
DE19943785A1 (de) 1998-09-25 2000-03-30 Siemens Ag Elektronische Schalteinrichtung mit mindestens zwei Halbleiterbauelementen
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6621121B2 (en) 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US6251716B1 (en) * 1999-01-06 2001-06-26 Lovoltech, Inc. JFET structure and manufacture method for low on-resistance and low voltage application
DE19902520B4 (de) 1999-01-22 2005-10-06 Siemens Ag Hybrid-Leistungs-MOSFET
DE19905078C1 (de) * 1999-02-08 2000-10-12 Siemens Ag Verfahren und Vorrichtung zur Symmetrierung der Verlustleistung mehrerer parallel geschalteter Kaskodenschaltungen
US6331455B1 (en) 1999-04-01 2001-12-18 Advanced Power Devices, Inc. Power rectifier device and method of fabricating power rectifier devices
US6498367B1 (en) 1999-04-01 2002-12-24 Apd Semiconductor, Inc. Discrete integrated circuit rectifier device
US6313482B1 (en) 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
WO2000077933A1 (de) * 1999-06-11 2000-12-21 Siemens Aktiengesellschaft Schaltungsanordnung mit einem abschaltbaren leistungs-halbleiterschalter
US6614289B1 (en) 2000-11-07 2003-09-02 Lovoltech Inc. Starter device for normally off FETs
US6566936B1 (en) * 1999-10-29 2003-05-20 Lovoltech Inc. Two terminal rectifier normally OFF JFET
US6355513B1 (en) * 1999-10-29 2002-03-12 Lovoltech, Inc. Asymmetric depletion region for normally off JFET
DE60045260D1 (de) * 1999-12-24 2010-12-30 Sumitomo Electric Industries Übergangsfeldeffekttransistor und seine herstellungsmethode
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
US7126169B2 (en) 2000-10-23 2006-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor element
AU2002230482A1 (en) * 2000-11-16 2002-05-27 Silicon Wireless Corporation Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same
US6537860B2 (en) 2000-12-18 2003-03-25 Apd Semiconductor, Inc. Method of fabricating power VLSI diode devices
US6503782B2 (en) * 2001-03-02 2003-01-07 Mississippi State University Research And Technology Corporation (Rtc) Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors
JP4830213B2 (ja) 2001-05-08 2011-12-07 株式会社デンソー 炭化珪素半導体装置及びその製造方法
AT411945B (de) * 2001-07-16 2004-07-26 Siemens Ag Oesterreich Schalteinrichtung
US6621107B2 (en) * 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6855981B2 (en) * 2001-08-29 2005-02-15 Denso Corporation Silicon carbide power device having protective diode
US6906350B2 (en) 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
US6855970B2 (en) * 2002-03-25 2005-02-15 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor device
US6900506B1 (en) 2002-04-04 2005-05-31 Lovoltech, Inc. Method and structure for a high voltage junction field effect transistor
US6921932B1 (en) 2002-05-20 2005-07-26 Lovoltech, Inc. JFET and MESFET structures for low voltage, high current and high frequency applications
US7262461B1 (en) 2002-05-20 2007-08-28 Qspeed Semiconductor Inc. JFET and MESFET structures for low voltage, high current and high frequency applications
US7268378B1 (en) 2002-05-29 2007-09-11 Qspeed Semiconductor Inc. Structure for reduced gate capacitance in a JFET
US20030227320A1 (en) * 2002-06-05 2003-12-11 Intel Corporation Buffer, buffer operation and method of manufacture
US6777722B1 (en) 2002-07-02 2004-08-17 Lovoltech, Inc. Method and structure for double dose gate in a JFET
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
US6696706B1 (en) * 2002-10-22 2004-02-24 Lovoltech, Inc. Structure and method for a junction field effect transistor with reduced gate capacitance
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
US7221010B2 (en) 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US7075132B1 (en) 2002-12-30 2006-07-11 Lovoltech, Inc. Programmable junction field effect transistor and method for programming the same
JP4265234B2 (ja) * 2003-02-13 2009-05-20 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US7038260B1 (en) 2003-03-04 2006-05-02 Lovoltech, Incorporated Dual gate structure for a FET and method for fabricating same
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
JP4039376B2 (ja) * 2004-03-09 2008-01-30 日産自動車株式会社 半導体装置
US7071518B2 (en) * 2004-05-28 2006-07-04 Freescale Semiconductor, Inc. Schottky device
US7118970B2 (en) 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
TWI256536B (en) * 2004-06-25 2006-06-11 Richtek Techohnology Corp Single-chip co-drain junction FET device, step-down converter, step-up converter, inversed converter, switching device, and DC-to-DC converter applying the same
US7202528B2 (en) * 2004-12-01 2007-04-10 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US7820511B2 (en) * 2004-07-08 2010-10-26 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
JP4777630B2 (ja) 2004-09-21 2011-09-21 株式会社日立製作所 半導体装置
JP4727964B2 (ja) 2004-09-24 2011-07-20 株式会社日立製作所 半導体装置
JP5033305B2 (ja) * 2004-10-01 2012-09-26 株式会社日立製作所 炭化珪素半導体装置
US7238224B2 (en) * 2004-10-29 2007-07-03 Hewlett-Packard Development Company, L.P. Fluid-gas separator
US20060091606A1 (en) * 2004-10-28 2006-05-04 Gary Paugh Magnetic building game
US7265399B2 (en) * 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
US7326962B2 (en) * 2004-12-15 2008-02-05 Cree, Inc. Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same
JP4777676B2 (ja) * 2005-03-23 2011-09-21 本田技研工業株式会社 接合型半導体装置および接合型半導体装置の製造方法
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060260956A1 (en) * 2005-05-23 2006-11-23 Bausch & Lomb Incorporated Methods for preventing or reducing interaction between packaging materials and polymeric articles contained therein
US7528040B2 (en) * 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US8203185B2 (en) * 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US7402844B2 (en) * 2005-11-29 2008-07-22 Cree, Inc. Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US8710510B2 (en) * 2006-08-17 2014-04-29 Cree, Inc. High power insulated gate bipolar transistors
US7646043B2 (en) * 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8633521B2 (en) * 2007-09-26 2014-01-21 Stmicroelectronics N.V. Self-bootstrapping field effect diode structures and methods
US8148748B2 (en) 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
WO2009042807A2 (en) * 2007-09-26 2009-04-02 Lakota Technologies, Inc. Adjustable field effect rectifier
US8643055B2 (en) * 2007-09-26 2014-02-04 Stmicroelectronics N.V. Series current limiter device
US9484451B2 (en) * 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
SE533026C2 (sv) 2008-04-04 2010-06-08 Klas-Haakan Eklund Fälteffekttransistor med isolerad gate seriekopplad med en JFET
US7688117B1 (en) 2008-04-21 2010-03-30 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration N channel JFET based digital logic gate structure
US8269263B2 (en) * 2008-05-12 2012-09-18 Vishay-Siliconix High current density power field effect transistor
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8288220B2 (en) * 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
WO2011007387A1 (ja) * 2009-07-15 2011-01-20 三菱電機株式会社 電力用半導体装置およびその製造方法
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
DE112009005538B3 (de) * 2009-07-15 2020-02-13 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung
US20110049580A1 (en) * 2009-08-28 2011-03-03 Sik Lui Hybrid Packaged Gate Controlled Semiconductor Switching Device Using GaN MESFET
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
WO2011108768A1 (ja) * 2010-03-04 2011-09-09 独立行政法人産業技術総合研究所 埋め込みゲート型炭化珪素静電誘導トランジスタおよびその製造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8896131B2 (en) 2011-02-03 2014-11-25 Alpha And Omega Semiconductor Incorporated Cascode scheme for improved device switching behavior
WO2012131768A1 (ja) * 2011-03-30 2012-10-04 株式会社日立製作所 炭化珪素半導体装置およびその製造方法
JP5348171B2 (ja) * 2011-04-15 2013-11-20 住友電気工業株式会社 接合型電界効果トランジスタ
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
JP2014531752A (ja) 2011-09-11 2014-11-27 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US8587033B1 (en) 2012-06-04 2013-11-19 Infineon Technologies Austria Ag Monolithically integrated HEMT and current protection device
US9166048B2 (en) * 2012-09-16 2015-10-20 Sensor Electronic Technology, Inc. Lateral/vertical semiconductor device
US9391189B2 (en) 2012-09-16 2016-07-12 Sensor Electronic Technology, Inc. Lateral/vertical semiconductor device
US9660038B2 (en) 2012-09-16 2017-05-23 Sensor Electronic Technology, Inc. Lateral/vertical semiconductor device
US9455697B2 (en) 2012-09-28 2016-09-27 Infineon Technologies Austria Ag Switch circuit with a first transistor device and a second transistor device connected in series
US9202811B2 (en) * 2012-12-18 2015-12-01 Infineon Technologies Americas Corp. Cascode circuit integration of group III-N and group IV devices
EP2787641B1 (de) * 2013-04-05 2018-08-29 Nexperia B.V. Kaskodenhalbleiterbauelemente
US9007117B2 (en) * 2013-08-02 2015-04-14 Infineon Technologies Dresden Gmbh Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor
US9331068B2 (en) 2013-10-30 2016-05-03 United Silicon Carbide, Inc. Hybrid wide-bandgap semiconductor bipolar switches
US9148139B2 (en) 2014-01-13 2015-09-29 United Silicon Carbide, Inc. Monolithically integrated cascode switches
FR3016751B1 (fr) * 2014-01-21 2017-10-06 Mersen France Sb Sas Dispositif de protection d'un circuit contre des surtensions et organe d'alimentation electrique comprenant un tel dispositif
JP6058170B2 (ja) * 2014-01-28 2017-01-11 三菱電機株式会社 炭化珪素半導体装置
US9787212B2 (en) * 2014-05-05 2017-10-10 Rockwell Automation Technologies, Inc. Motor drive with silicon carbide MOSFET switches
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
WO2016028944A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
US11018253B2 (en) 2016-01-07 2021-05-25 Lawrence Livermore National Security, Llc Three dimensional vertically structured electronic devices
US10903371B2 (en) * 2016-01-07 2021-01-26 Lawrence Livermore National Security, Llc Three dimensional vertically structured MISFET/MESFET
US9871510B1 (en) 2016-08-24 2018-01-16 Power Integrations, Inc. Clamp for a hybrid switch
JP6640691B2 (ja) 2016-09-21 2020-02-05 株式会社東芝 半導体装置及びその製造方法
IT201700119626A1 (it) * 2017-10-23 2019-04-23 Valentina Daddi Transistor ibrido a gate isolato multi-struttura e multi-materiale
CN115207128B (zh) * 2022-09-09 2023-01-13 深圳芯能半导体技术有限公司 一种沟槽侧壁栅抗负压碳化硅mosfet及其制备方法
CN115207130B (zh) * 2022-09-09 2023-01-13 深圳芯能半导体技术有限公司 一种侧壁栅双沟槽碳化硅mosfet及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
US4571815A (en) * 1981-11-23 1986-02-25 General Electric Company Method of making vertical channel field controlled device employing a recessed gate structure
JPS61285770A (ja) * 1985-06-12 1986-12-16 Toshiba Corp 拡散型半導体素子
JPS62198160A (ja) * 1986-02-25 1987-09-01 Fuji Electric Co Ltd 絶縁ゲ−ト電界効果トランジスタ
JPS6347983A (ja) * 1986-08-18 1988-02-29 Sharp Corp 炭化珪素電界効果トランジスタ
JPH0673381B2 (ja) * 1986-08-26 1994-09-14 松下電工株式会社 電界効果半導体装置
JP2570742B2 (ja) * 1987-05-27 1997-01-16 ソニー株式会社 半導体装置
US4791462A (en) * 1987-09-10 1988-12-13 Siliconix Incorporated Dense vertical j-MOS transistor
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US4827321A (en) * 1987-10-29 1989-05-02 General Electric Company Metal oxide semiconductor gated turn off thyristor including a schottky contact
US4903189A (en) * 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
US4961100A (en) * 1988-06-20 1990-10-02 General Electric Company Bidirectional field effect semiconductor device and circuit
CA2008176A1 (en) * 1989-01-25 1990-07-25 John W. Palmour Silicon carbide schottky diode and method of making same
US4982260A (en) * 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US5132238A (en) * 1989-12-28 1992-07-21 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device utilizing an accumulation layer
US5202750A (en) * 1990-04-09 1993-04-13 U.S. Philips Corp. MOS-gated thyristor
CA2064146C (en) * 1991-03-28 1997-08-12 Hisashi Ariyoshi Schottky barrier diode and a method of manufacturing thereof
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5313082A (en) * 1993-02-16 1994-05-17 Power Integrations, Inc. High voltage MOS transistor with a low on-resistance

Also Published As

Publication number Publication date
DE69412515T2 (de) 1999-05-06
JPH09508492A (ja) 1997-08-26
DE69412515D1 (de) 1998-09-17
AU1439495A (en) 1995-07-17
EP0737365B1 (de) 1998-08-12
EP0737365A1 (de) 1996-10-16
WO1995018465A1 (en) 1995-07-06
US5396085A (en) 1995-03-07

Similar Documents

Publication Publication Date Title
ATE169773T1 (de) Drei-anschlussklemmen-gategesteuerte halbleiterschalteranordnung mit gleichrichtergate
US7202528B2 (en) Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
Simin et al. 7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
CA1205877A (en) Normally-off, gate-controlled electrical circuit with low on-resistance
US5014102A (en) MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
KR950007161A (ko) 절연게이트형 반도체장치와 그것을 사용한 구동회로장치 및 전자시스템
US8314462B2 (en) Semiconductor devices including electrodes with integrated resistances
US20090009232A1 (en) Power Switches
WO1999065082A1 (en) Field-controlled high-power semiconductor devices
EP0280535A3 (de) MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation
ATE225568T1 (de) Leistung-mosfet aus siliziumkarbid
JPH0883897A (ja) Ｍｏｓ制御型サイリスタ
JPH0575110A (ja) 半導体装置
SE9900358D0 (sv) A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
ATE452426T1 (de) Leistungshalbleiteranordnung mit halbisolierendem substrat
Sugawara et al. 4.5 kV novel high voltage high performance SiC-FET" SIAFET"
WO1998012749A3 (de) Emittergesteuerter thyristor
Alok et al. High voltage (450 V) 6H-SiC lateral MESFET structure
DE68929359T2 (de) Laterale bipolare Transistoranordnungen mit isolierter Steuerelektrode mit geteilter Anode
JPH05315618A (ja) 絶縁ゲート型半導体装置
JPS57192069A (en) Insulated gate field effect semiconductor device
JPS6414960A (en) Semiconductor element
DE60044776D1 (de) LATERALER SiC-BASIERTER FELDEFFEKTTRANSITOR, DESSEN HERSTELLUNGSVERFAHREN UND DER GEBRAUCH EINES SOLCHEN TRANSISTORS
JPH02270377A (ja) スイツチング素子
JPH04150069A (ja) 複合半導体装置