IT201700119626A1 - Transistor ibrido a gate isolato multi-struttura e multi-materiale - Google Patents
Transistor ibrido a gate isolato multi-struttura e multi-materialeInfo
- Publication number
- IT201700119626A1 IT201700119626A1 IT102017000119626A IT201700119626A IT201700119626A1 IT 201700119626 A1 IT201700119626 A1 IT 201700119626A1 IT 102017000119626 A IT102017000119626 A IT 102017000119626A IT 201700119626 A IT201700119626 A IT 201700119626A IT 201700119626 A1 IT201700119626 A1 IT 201700119626A1
- Authority
- IT
- Italy
- Prior art keywords
- insulated gate
- material insulated
- hybrid transistor
- gate hybrid
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102017000119626A IT201700119626A1 (it) | 2017-10-23 | 2017-10-23 | Transistor ibrido a gate isolato multi-struttura e multi-materiale |
GB2007371.4A GB2583197B (en) | 2017-10-23 | 2018-10-21 | Hybrid insulated gate multi-structure and multi-material transistor |
PCT/IT2018/050203 WO2019082220A1 (en) | 2017-10-23 | 2018-10-21 | MULTI-MATERIAL TRANSISTOR AND HYBRID INSULATED GRID MULTI-STRUCTURE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102017000119626A IT201700119626A1 (it) | 2017-10-23 | 2017-10-23 | Transistor ibrido a gate isolato multi-struttura e multi-materiale |
Publications (1)
Publication Number | Publication Date |
---|---|
IT201700119626A1 true IT201700119626A1 (it) | 2019-04-23 |
Family
ID=61656098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT102017000119626A IT201700119626A1 (it) | 2017-10-23 | 2017-10-23 | Transistor ibrido a gate isolato multi-struttura e multi-materiale |
Country Status (3)
Country | Link |
---|---|
GB (1) | GB2583197B (it) |
IT (1) | IT201700119626A1 (it) |
WO (1) | WO2019082220A1 (it) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5396085A (en) * | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
WO2001045146A1 (en) * | 1999-12-16 | 2001-06-21 | Koninklijke Philips Electronics N.V. | Superior silicon carbide integrated circuits and method of fabricating |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9219144B2 (en) * | 2012-08-10 | 2015-12-22 | Infineon Technologies Austria Ag | Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device |
US8963239B2 (en) * | 2013-03-13 | 2015-02-24 | Icemos Technology, Ltd. | 800 V superjunction device |
-
2017
- 2017-10-23 IT IT102017000119626A patent/IT201700119626A1/it unknown
-
2018
- 2018-10-21 GB GB2007371.4A patent/GB2583197B/en active Active
- 2018-10-21 WO PCT/IT2018/050203 patent/WO2019082220A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5396085A (en) * | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
WO2001045146A1 (en) * | 1999-12-16 | 2001-06-21 | Koninklijke Philips Electronics N.V. | Superior silicon carbide integrated circuits and method of fabricating |
Also Published As
Publication number | Publication date |
---|---|
GB2583197A8 (en) | 2020-11-18 |
WO2019082220A1 (en) | 2019-05-02 |
GB202007371D0 (en) | 2020-07-01 |
GB2583197A (en) | 2020-10-21 |
GB2583197B (en) | 2022-04-20 |
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