GB202007371D0 - Hybrid insulated gate mult-structure and multi-material transistor - Google Patents

Hybrid insulated gate mult-structure and multi-material transistor

Info

Publication number
GB202007371D0
GB202007371D0 GBGB2007371.4A GB202007371A GB202007371D0 GB 202007371 D0 GB202007371 D0 GB 202007371D0 GB 202007371 A GB202007371 A GB 202007371A GB 202007371 D0 GB202007371 D0 GB 202007371D0
Authority
GB
United Kingdom
Prior art keywords
mult
insulated gate
material transistor
hybrid insulated
hybrid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB2007371.4A
Other versions
GB2583197A (en
GB2583197B (en
GB2583197A8 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daddi Valentina
Original Assignee
Daddi Valentina
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daddi Valentina filed Critical Daddi Valentina
Publication of GB202007371D0 publication Critical patent/GB202007371D0/en
Publication of GB2583197A publication Critical patent/GB2583197A/en
Publication of GB2583197A8 publication Critical patent/GB2583197A8/en
Application granted granted Critical
Publication of GB2583197B publication Critical patent/GB2583197B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
GB2007371.4A 2017-10-23 2018-10-21 Hybrid insulated gate multi-structure and multi-material transistor Active GB2583197B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT102017000119626A IT201700119626A1 (en) 2017-10-23 2017-10-23 Multi-structure and multi-material insulated gate hybrid transistor
PCT/IT2018/050203 WO2019082220A1 (en) 2017-10-23 2018-10-21 Hybrid insulated gate multi-structure and multi-material transistor

Publications (4)

Publication Number Publication Date
GB202007371D0 true GB202007371D0 (en) 2020-07-01
GB2583197A GB2583197A (en) 2020-10-21
GB2583197A8 GB2583197A8 (en) 2020-11-18
GB2583197B GB2583197B (en) 2022-04-20

Family

ID=61656098

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2007371.4A Active GB2583197B (en) 2017-10-23 2018-10-21 Hybrid insulated gate multi-structure and multi-material transistor

Country Status (3)

Country Link
GB (1) GB2583197B (en)
IT (1) IT201700119626A1 (en)
WO (1) WO2019082220A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
US6303508B1 (en) * 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
US9219144B2 (en) * 2012-08-10 2015-12-22 Infineon Technologies Austria Ag Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device
US8963239B2 (en) * 2013-03-13 2015-02-24 Icemos Technology, Ltd. 800 V superjunction device

Also Published As

Publication number Publication date
GB2583197A (en) 2020-10-21
IT201700119626A1 (en) 2019-04-23
WO2019082220A1 (en) 2019-05-02
GB2583197B (en) 2022-04-20
GB2583197A8 (en) 2020-11-18

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