WO2022158392A1 - パワー半導体装置およびその製造方法ならびに電力変換装置 - Google Patents

パワー半導体装置およびその製造方法ならびに電力変換装置 Download PDF

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Publication number
WO2022158392A1
WO2022158392A1 PCT/JP2022/001154 JP2022001154W WO2022158392A1 WO 2022158392 A1 WO2022158392 A1 WO 2022158392A1 JP 2022001154 W JP2022001154 W JP 2022001154W WO 2022158392 A1 WO2022158392 A1 WO 2022158392A1
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WIPO (PCT)
Prior art keywords
heat sink
module
heat
semiconductor device
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/001154
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English (en)
French (fr)
Japanese (ja)
Inventor
泰之 三田
正喜 後藤
隼人 寺田
穂隆 六分一
晴菜 多田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to CN202280009644.XA priority Critical patent/CN116762170A/zh
Priority to JP2022576650A priority patent/JP7433480B2/ja
Priority to US18/258,037 priority patent/US12477704B2/en
Publication of WO2022158392A1 publication Critical patent/WO2022158392A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/20409—Outer radiating structures on heat dissipating housings, e.g. fins integrated with the housing
    • H05K7/20418—Outer radiating structures on heat dissipating housings, e.g. fins integrated with the housing the radiating structures being additional and fastened onto the housing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/01—Manufacture or treatment
    • H10W40/03—Manufacture or treatment of arrangements for cooling
    • H10W40/037—Assembling together parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/027—Mechanical treatments, e.g. deforming, punching or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations

Definitions

  • the present disclosure relates to a power semiconductor device, its manufacturing method, and a power conversion device.
  • the present disclosure has been made as part of such development, and one object is to provide a power semiconductor device capable of further improving productivity, and another object is to provide such a power semiconductor device.
  • Another object of the present invention is to provide a method of manufacturing a power semiconductor device, and to provide a power converter to which such a power semiconductor device is applied.
  • a power semiconductor device has a power module section, a heat sink base section, and a plurality of heat dissipation fins.
  • the power module section has a module base on which a first concave-convex portion is formed, and a power semiconductor element is mounted on the module base and sealed with a sealing material.
  • the heat sink base portion is formed with a second uneven portion, and is joined to the module base in such a manner that the second uneven portion and the first uneven portion are fitted to each other.
  • a plurality of heat radiation fins are attached to the heat sink base.
  • the module base and the heat sink base are formed in such a manner that, with the module base and the heat sink base joined together, either the first concave-convex portion or the second concave-convex portion has a buffer concave portion left as a space. .
  • a method for manufacturing a power semiconductor device includes the following steps.
  • a module base on which the first concave-convex portion is formed is prepared.
  • a power module section is formed by mounting a power semiconductor element on a module base and encapsulating the power semiconductor element with a sealing material in such a manner that the first concave-convex portion is exposed.
  • a heat sink base portion is prepared on which a second concave-convex portion that fits with the first concave-convex portion is formed. The first uneven portion and the second uneven portion are opposed to each other, one of the module base and the heat sink base portion of the power module portion is pressed against the other, and the first uneven portion and the second uneven portion are fitted to each other. to integrate the module base and the heat sink base.
  • either the first uneven portion or the second uneven portion is left as a buffer concave portion. is formed in a manner comprising
  • a power conversion device includes the power semiconductor device, a main conversion circuit that converts input power and outputs it, and a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit. It has
  • the module base and the heat sink base part are in a state where the module base and the heat sink base part are joined, and either the first uneven part or the second uneven part is left as a space. It is formed in a manner comprising a buffer recess that is recessed. As a result, it is possible to reduce the load when integrating the module base and the heat sink base. As a result, it is possible to obtain a power semiconductor device capable of improving productivity.
  • the first uneven portion and the first uneven portion are formed while the module base and the heat sink base portion are joined together. Either of the two recesses and protrusions is formed in a manner with a buffer recess left as a space. As a result, it is possible to reduce the load when integrating the module base and the heat sink base. As a result, the productivity of power semiconductor devices can be improved.
  • a power converter capable of improving productivity is obtained by including the power semiconductor device.
  • FIG. 1 is an exploded side view including a partial cross section, showing the power semiconductor device according to Embodiment 1;
  • FIG. 2 is a bottom view showing an example of a pattern of uneven portions formed on a module base in the power module portion of the power semiconductor device shown in FIG. 1 in the same embodiment;
  • FIG. It is a side view including a partial cross section which shows the state which integrated the power module part and the heat sink in the same embodiment.
  • It is a side view including a partial cross section which shows one process of the manufacturing method of a power semiconductor device in the embodiment.
  • FIG. 10 is a first diagram for explaining effects of the power semiconductor device in the same embodiment
  • FIG. 4 is a second diagram for explaining the effects of the power semiconductor device in the same embodiment
  • FIG. 10 is an exploded side view including a partial cross section, showing a first modified example of the structure of the uneven portion in the same embodiment.
  • it is the third diagram for explaining the effect of the power semiconductor device.
  • FIG. 11 is a fourth diagram for explaining effects of the power semiconductor device in the same embodiment
  • FIG. 11 is a fifth diagram for explaining the effects of the power semiconductor device in the same embodiment
  • it is the sixth diagram for explaining the effect of the power semiconductor device.
  • it is the 7th figure for demonstrating the effect of a power semiconductor device.
  • FIG. 11 is an eighth diagram for explaining the effect of the power semiconductor device in the same embodiment;
  • FIG. 11 is a ninth diagram for explaining the effects of the power semiconductor device in the same embodiment;
  • FIG. 10 is a bottom view showing another example of the pattern of uneven portions formed on the module base in the power module section in the same embodiment.
  • FIG. 11 is an exploded side view including a partial cross section, showing a second modified example of the structure of the uneven portion in the same embodiment.
  • FIG. 11 is an exploded side view including a partial cross section, showing a third modified example of the structure of the uneven portion in the same embodiment.
  • FIG. 11 is an exploded side view including a partial cross section, showing a fourth modified example of the structure of the uneven portion in the same embodiment.
  • FIG. 11 is an eighth diagram for explaining the effect of the power semiconductor device in the same embodiment.
  • FIG. 11 is a ninth diagram for explaining the effects of the power semiconductor device in the same embodiment
  • FIG. 10 is a bottom view showing another example of the pattern of uneven portions formed on
  • FIG. 10 is an exploded side view including a partial cross section, showing a first modified example of the structure of the heat sink in the same embodiment.
  • FIG. 11 is an exploded side view including a partial cross section, showing a second modification of the structure of the heat sink in the same embodiment.
  • FIG. 10 is a bottom view showing a first modified example of the structure of heat radiation fins in the heat sink in the same embodiment;
  • FIG. 24 is a bottom view for explaining the effects of the heat sink shown in FIG. 23 in the same embodiment;
  • FIG. 24 is a side view including a partial cross section, showing one step of the manufacturing method for explaining the effect of the heat sink shown in FIG. 23 in the same embodiment;
  • FIG. 25 is a side view including a partial cross section, showing a process performed after the process shown in FIG.
  • FIG. 22 is a side view including a partial cross section, showing one step of the manufacturing method for explaining the effect of the heat sink shown in FIG. 21 in the same embodiment
  • FIG. 28 is a side view including a partial cross section, showing a process performed after the process shown in FIG. 27 for explaining the effects of the heat sink shown in FIG. 21 in the same embodiment
  • FIG. 11 is a bottom view showing a second modified example of the structure of the radiation fins in the heat sink in the same embodiment
  • FIG. 30 is a bottom view for explaining the effects of the heat sink shown in FIG. 29 in the same embodiment;
  • FIG. 10 is a bottom view showing a third modified example of the structure of the radiation fins in the heat sink in the same embodiment
  • FIG. 32 is a bottom view for explaining the effects of the heat sink shown in FIG. 31 in the same embodiment
  • FIG. 10 is a partially enlarged cross-sectional view enlarging a part of the power semiconductor device and a side view including a partial cross section, for explaining the function and effect of the buffer concave portion in the same embodiment
  • FIG. 11 is an exploded side view including a partial cross section, showing a power semiconductor device according to a second embodiment
  • FIG. 4 is a side view including a partial cross section, showing an example of a state in which the power module section and the heat sink are integrated in the same embodiment.
  • FIG. 4 is a side view including a partial cross section, showing another example of a state in which the power module section and the heat sink are integrated in the same embodiment.
  • FIG. 10 is a block diagram of a power conversion device to which a power semiconductor device is applied according to Embodiment 3;
  • FIG. 1 shows an exploded side view including a partial cross section of the power semiconductor device.
  • the power semiconductor device 1 includes a power module section 11 and a heat sink 51 .
  • An uneven portion 15 is formed as a first uneven portion in the power module portion 11 .
  • a concave-convex portion 55 is formed on the heat sink 51 as a second concave-convex portion.
  • the power module section 11 has a module base 13 .
  • a lead frame 23 is arranged on one surface of the module base 13 with an insulating sheet 21 interposed therebetween.
  • a chip 27 is joined to the lead frame 23 with solder 25 .
  • a power semiconductor element is formed on the chip 27 .
  • the chip 27 and the like are sealed with a molding resin 29 as a sealing material.
  • a part of the lead frame 23 protrudes as an external terminal from the side surface of the mold resin 29 .
  • the concave-convex portion 15 has a concave-convex shape in which a concave portion 15a and the like are formed in a flat portion 15f.
  • the uneven portion 15 includes a concave portion 15a and a buffer concave portion 15c. That is, in this case, the module base 13 is formed in such a manner that the concave-convex portion 15 is provided with the buffer concave portion 15c.
  • the buffer concave portion 15c will be described later.
  • the concave portions 15a and the like extend, for example, along the Y-axis direction as the first direction and are formed at intervals in the X-axis direction intersecting the Y-axis direction.
  • the uneven portion 15 means the shape of the entire surface of the module base 13 including the recessed portion 15a and the buffer recessed portion 15c.
  • the heat sink 51 includes a heat sink base portion 53 including a heat dissipation diffusion portion 53 a and heat dissipation fins 63 .
  • a heat sink 51a having a crimped structure in which the radiation fins 63 and the heat sink base portion 53 are integrated by crimping is employed.
  • An uneven portion 55 is formed on the heat sink base portion 53 (heat dissipation diffusion portion 53a).
  • the uneven portion 55 has an uneven shape in which a convex portion 55a is formed on a flat portion 55f.
  • the radiation fins 63 are arranged on the side of the heat sink base portion 53 opposite to the side on which the uneven portion 55 is formed, along the Y-axis direction as the second direction, and along the X-axis direction as the third direction. are spaced apart from each other in the direction.
  • the uneven portion 15 formed in the power module portion 11 and the uneven portion 55 formed in the heat sink 51 are fitted to each other by caulking, thereby forming a power module.
  • the portion 11 and the heat sink 51 are joined and integrated.
  • the convex portion 55a is not fitted into the buffer concave portion 15c.
  • the uneven portion 15 is formed with a buffer recessed portion 15c in which the recessed portion is left as a space.
  • one buffer recess 15c is arranged between one recess 15a and another recess 15a that are adjacent to each other in such a manner that the uneven portion 15 and the uneven portion 55 are fitted to each other, but two or more are arranged.
  • the module base 13 is produced by, for example, cutting, die casting, casting, or extrusion.
  • Module base 13 is made of, for example, aluminum or an aluminum alloy.
  • the heat sink base portion 53 is produced by cutting, die casting, casting, extrusion, or the like.
  • the heat sink base portion 53 is made of, for example, aluminum or an aluminum alloy.
  • the power semiconductor device 1 according to Embodiment 1 is configured as described above.
  • the module base 13 is prepared in which the uneven portion 15 including the concave portion 15a and the buffer concave portion 15c is formed (see FIG. 4).
  • a power module section 11 is formed by mounting a chip 27 formed with a power semiconductor element on a module base 13 and sealing it with a mold resin 29 (see FIG. 4).
  • a heat sink 51a (51) having an uneven portion 55 and a crimped portion 61 is prepared (see FIG. 4).
  • a plurality of plate-shaped heat radiation fins 63 are prepared (see FIG. 4).
  • the power module section 11 and the power module section 11 are arranged such that the uneven section 15 formed on the module base 13 of the power module section 11 and the uneven section 55 formed on the heat sink base section 53 face each other.
  • a heat sink base portion 53 is arranged.
  • a plurality of radiation fins 63 are arranged at positions facing the crimped portions 61 formed on the heat sink base portion 53 .
  • each of the plurality of radiating fins 63 is inserted into a corresponding groove (fin insertion groove) located between adjacent crimped portions 61, and the crimped portions 61 A press blade 71 as a processing tool is inserted toward .
  • the press blade 71 is brought into contact with the crimped portion 61. Then, as shown in FIG. 6, the press blade 71 is brought into contact with the crimped portion 61. Then, as shown in FIG. By pressing the power module portion 11 from above in this state, the uneven portion 15 of the module base 13 (power module portion 11) and the uneven portion 55 of the heat sink base portion 53 are fitted to each other, and the power module portion 11 is It is joined to the heat sink base portion 53 .
  • the power semiconductor device 1 in which the power module section 11 and the heat sink 51 shown in FIG. 3 are integrated is completed.
  • the module base 13 is formed with the buffer concave portion 15c into which the convex portion 55a of the uneven portion 55 formed on the heat sink base portion 53 is not fitted. Thereby, the load when joining the module base 13 to the heat sink base portion 53 can be reduced. This will be explained using schematic diagrams.
  • FIG. 7 shows a state before the module base 13 and the heat sink base portion 53 are fitted (before the heat sink is caulked) in the case of the module base 13 in which no buffer concave portion is formed.
  • 4 schematically shows the state after the heat sink is crimped (after the heat sink is crimped).
  • FIG. 8 shows the state before the module base 13 and the heat sink base portion 53 are fitted together (before heat sink caulking) in the case of the module base 13 having the buffer concave portion 15c according to the first embodiment
  • the state after fitting (after heat sink caulking) is schematically shown.
  • a reference load was applied as a press load. This standard load is described as "1 AkN".
  • the flat portion 15f of the module base 13 and the flat portion 55f of the heat sink base portion 53 are not separated from each other. There is a distance between them and the heatsink crimping is not complete.
  • the completion of heat sink crimping means a state in which the gap between the module base 13 and the heat sink base portion 53 does not change even if the press load is increased.
  • the buffer recess 15c in the module base 13 it is possible to reduce the press load applied to complete heat sink caulking.
  • the module base 13 and the heat sink base portion 53 are more stable than when the buffer recess 15c is not provided.
  • the allowable range for relative misalignment is widened.
  • the positioning accuracy between the module base 13 and the heat sink base portion 53 (heat sink 51) can be loosened when caulking the heat sink, and a simpler positioning jig can be used as the positioning jig.
  • the production rate is reduced. It is possible to realize heat sink caulking with good properties.
  • the module when aligning the module base 13 and the heat sink base portion 53 (heat sink 51), the module can be positioned relative to the heat sink base portion 53 (heat sink 51). A rough alignment of the base 13 can be performed.
  • the taller convex portion 55b slides on the inclined portion of the deeper concave portion 15b, and heat sink crimping is started.
  • the positioning accuracy in the X-axis direction can be further moderated, and a simpler positioning jig can be used as the positioning jig.
  • heat sink crimping with even better productivity can be realized.
  • the deeper recesses 15b are arranged at the ends of the module base 13 in the X-axis direction (positive direction) and the ends in the X-axis direction (negative direction), and the higher protrusions 55b are arranged at the heat sink base portion 53 at the X-axis direction. It is desirable to arrange them at the end of the direction (positive direction) and the end of the X-axis direction (negative direction). This makes it possible to easily perform rough alignment of the module base 13 with respect to the heat sink base portion 53 (heat sink 51), which can contribute to improvement in the productivity of heat sink caulking.
  • FIG. 10 shows, as models used for analysis, a model (comparative example) in which no buffer recess is formed and a model (embodiment) in which a buffer recess is formed.
  • the dimensions of each part of the module base 13 and the heat sink base part 53 are set to about several millimeters in the short part (see the short dimension line) and about several tens of millimeters in the long part (see the long dimension line). .
  • the position of the center line of the projection 55a in the X-axis direction was aligned with the position of the center line of the recess 15a and the like in the X-axis direction (see the dotted line).
  • pure aluminum A1050 series was set as the material of the module base 13 .
  • aluminum-magnesium-silicon A6063 system is set. This model was used to analyze how the module base 13 and the like are plastically deformed depending on the presence or absence of the buffer recess.
  • the relationship between the press load and the gap was obtained.
  • the results are shown in FIG.
  • the horizontal axis is the press load.
  • the vertical axis is the gap RD.
  • the gap RD is the distance between the flat portion 15 f of the module base 13 and the flat portion 55 f of the heat sink base portion 53 . It should be noted that this distance can be regarded as the distance remaining until the convex portion of the module base 13 is fitted into the concave portion of the heat sink base portion.
  • model A (Embodiment 1) can reduce the press load required to complete heat sink crimping by 20% compared to model B (comparative example).
  • the evaluation result described above is just an example, and it is possible to further reduce the press load by devising the structure including the buffer concave portion 15c in the module base 13 and the heat sink base portion 53.
  • FIG. 15 shows the state before the heat sink is caulked.
  • FIG. 16 shows contour lines (contour diagrams) of the amount of plastic deformation (in the X-axis direction) when a press load (3.0 AkN) that is 3.0 times the reference press load is applied.
  • the module base 13 is plastically deformed in the X-axis direction by about ⁇ 0.2 mm by applying a press load (3.0 AkN) from the state before heat sink crimping. I found out. From this evaluation, it was confirmed that the plastic deformation of the module base 13 caused by the formation of the buffer concave portion 15c contributed to the reduction of the press load.
  • the holding strength between the module base 13 and the heat sink base portion 53 after heat sink crimping can be adjusted by increasing or decreasing the area (area) of the buffer recess portion 15c that is not fitted with the convex portion 55a or the like.
  • the holding strength is the vertical tensile strength, which is the maximum strength immediately before the module base 13 and the heat sink base portion 53 are pulled apart when the module base 13 and the heat sink base portion 53 are subjected to a tensile test.
  • the region (area) of the buffer concave portion 15c may be adjusted to the extent that the effect of reducing the press load can be obtained.
  • the buffer recess 15c is not limited to this, and may be a buffer recess 15c formed discontinuously along the Y-axis direction as shown in FIG. Even in this case, the same effect as in the case where the buffer concave portions 15c are formed uniformly can be obtained.
  • the uneven portion 55 formed on the heat sink base portion 53 is also formed discontinuously so as to correspond to the uneven portion 15. .
  • one buffer recess 15c is arranged in each (seven places) between adjacent recesses 15a and recesses 15a into which the projections 55a are fitted.
  • the case has been described as an example (see FIG. 3).
  • the layout of the buffer recesses 15c is not limited to this, and as shown in FIG. You may make it provide only a part. Further, as shown in FIG. 19, the structure in which buffer recesses 15c are formed between adjacent recesses 15a may be provided at four locations in the module base 13. FIG. Even with such an arrangement mode of the buffer concave portion 15c, it is possible to contribute to the reduction of the press load.
  • the structure in which the buffer recess 15 c is formed in the module base 13 has been described as an example, but the buffer recess may be formed in the heat sink base portion 53 .
  • the module base 13 is formed with an uneven portion 17 .
  • the concave-convex portion 17 has a concave-convex shape in which convex portions 17a and the like are formed on a flat portion 17f.
  • Concavo-convex portions 57 are formed in the heat sink base portion 53 (radiating diffusion portion 53a).
  • the uneven portion 57 includes a recess 57a and a buffer recess 57c.
  • the convex portion 17a does not fit into the buffer concave portion 57c.
  • the concave-convex portion 57 has a concave-convex shape in which a concave portion 57a and a buffer concave portion 57c are formed in a flat portion 57f. That is, in this case, the heat sink base portion 53 is formed in such a manner that the uneven portion 57 is provided with the buffer concave portion 57c.
  • the concave-convex portion 57 formed on the heat sink base portion 53 includes a buffer concave portion 57c into which the convex portion 17a of the concave-convex portion 17 formed on the module base 13 does not fit, which is similar to the power semiconductor device 1 shown in FIG.
  • the press load can be reduced, which can contribute to the improvement of the sanctioning property.
  • the heat radiating fins 63 of the heat sink 51 are, for example, plate materials (rolled materials) made of aluminum, aluminum alloy, or the like. By using such a plate material, it is possible to achieve both workability and heat dissipation.
  • embossing the heat radiating fins 63 minute depressions may be formed on the surfaces of the heat radiating fins 63.
  • the embossing can be performed with a mold used when manufacturing the radiation fins 63 by press working. As a result, the surface of the radiation fin 63 can be embossed without increasing the production cost.
  • the embossed heat radiation fins 63 are stacked, the contact area between the adjacent heat radiation fins 63 is reduced, and the surface friction between the heat radiation fins 63 is reduced. can do. As a result, it is possible to simplify production equipment used for caulking to integrate the heat sink base portion 53 and the heat radiation fins 63 . Moreover, the production takt time can be shortened, and the productivity can be improved.
  • the crimped portion 61 bites into the embossed recess, thereby exhibiting an anchor effect. can be done.
  • the frictional force in the direction in which the radiation fins 63 are pulled out from the caulked portion is increased, and the vertical tensile strength of the radiation fins 63 with respect to the heat sink base portion 53 can be improved.
  • the caulked portion 61 of the heat sink base portion 53 is embossed rather than biting into the radiation fins 63.
  • Plastic deformation follows the surface of the radiation fins 63 .
  • the vertical tensile strength of the embossed radiation fins with respect to the heat sink base portion 53 can be improved.
  • the caulked portions 61 bite into the surfaces of the radiation fins 63 , so that the radiation fins 63 become plastic. will be transformed.
  • the vertical tensile strength of the heat sink base portion 53 can be improved by the plastic deformation of the heat radiating fins 63 rather than by the effect of embossing.
  • the inventors prepared a sample (sample A) in which the heat sink base portion 53 was formed from an aluminum-magnesium-silicon alloy, aluminum 6000 series material, and the radiation fins 63 were formed from a pure aluminum, aluminum 1000 series material, Vertical tensile strength was evaluated.
  • a sample (sample B) in which both the heat sink base portion 53 and the heat radiating fins 63 were made of a pure aluminum 1000 series material was produced, and the vertical tensile strength was evaluated. As a result, it was found that the vertical tensile strength of sample A was about 2.5 to 3.6 times stronger than the vertical tensile strength of sample B.
  • the material of the module base 13 , the heat sink base portion 53 and the heat radiation fins 63 is not limited to the aluminum-based material. material is used.
  • the heat dissipation performance can be further improved by using a copper-based plate material, which has a higher thermal conductivity than an aluminum-based material, as the heat dissipation fins 36 .
  • the heat sink 51 As the heat sink 51, a heat sink 51a having a crimped structure in which the radiation fins 63 and the heat sink base portion 53 are integrated by crimping is employed. Accordingly, the heat radiation fins 63 can be designed and manufactured separately from the heat sink base portion 53 according to the specifications, thereby contributing to the improvement of the heat radiation capability of the heat sink 51a.
  • a heat sink 51 in which the radiation fins 63 and the heat sink base portion 53 are integrally formed may be applied in addition to the heat sink 51a having the caulking structure.
  • the heat sink 51 may be a heat sink 51b in which a heat sink base portion 53 and heat radiation fins 63 are integrally formed by extrusion, cutting or forging.
  • a heat sink 51c in which a heat sink base portion 53 and heat radiation fins 63 are integrally formed by die casting may be used.
  • the outer peripheral region of the heat sink base portion 53 can function as a load receiving portion 65 when crimping is performed.
  • the heat sink base portion 53 is placed on the heat sink setting jig 73 .
  • the uneven portion 15 formed on the module base 13 and the uneven portion 55 formed on the heat sink base portion 53 are fitted to each other.
  • the power module section 11 is joined to the heat sink base section 53 .
  • the power semiconductor device 1 in which the power module section 11 and the heat sink 51 (heat sink base section 53) are integrated is manufactured.
  • the heat sink set jig 73 By integrating the power module section 11 and the heat sink 51 using the heat sink set jig 73, integration can be performed more easily and efficiently than when the heat sink set jig 73 is not used. can.
  • the heat sink set jig 73 can also be applied when the heat sinks 51b and 51c in which the radiation fins 63 and the heat sink base portion 53 are integrally formed are used. As shown in FIG. 27 , the heat sinks 51 b and 51 c integrally formed with the radiation fins 63 and the heat sink base portion 53 are placed on the heat sink setting jig 73 .
  • the uneven portion 15 formed on the module base 13 and the uneven portion 55 formed on the heat sink base portion 53 are fitted to each other. Then, the power module section 11 and the heat sink base section 53 are integrated.
  • the power semiconductor device 1 in which the power module section 11 and the heat sink 51 are integrated is manufactured.
  • the power semiconductor device 1 in which the power module section 11 and the heat sink 51 are integrated is manufactured.
  • the heat sink 51 in which the radiation fins 63 and the heat sink base portion 53 are integrally formed the power module portion 11 and the heat sink 51 can be easily integrated by using the heat sink setting jig 73. .
  • the power module section 11 can be joined to the heat sink base section 53 by pressing the power module section 11 from above while the jig is in contact with the heat sink base section 53 .
  • the case where the radiation fins 63 are uniformly formed along the Y-axis direction has been described as an example (see FIG. 23).
  • the radiation fins 63 are not limited to this, and as shown in FIG. 29, radiation fins 63 composed of radiation fins 63a and radiation fins 63b discontinuously formed along the Y-axis direction may be used.
  • the heat radiating fins 63 in a manner excluding the outer peripheral region positioned along the outer periphery of the heat sink base portion 53.
  • the outer peripheral region of the portion 53 can function as a load receiving portion 65 during caulking.
  • the radiation fins 63 may be arranged such that the position of the radiation fins 63b in the X-axis direction is shifted from the position of the radiation fins 63a in the X-axis direction.
  • the radiation fin 63b is positioned between the radiation fins 63a adjacent to each other, so that the heat radiation performance of the power semiconductor device 1 can be improved.
  • the outer peripheral region of the heat sink base portion 53 can function as a load receiving portion 65 when caulking is performed.
  • the size of the module base 13 of the power module section 11 is uniquely set for the power module section 11 (mold). Therefore, when the heat generation density of the heat generated in the power semiconductor device 1 (power module section 11) changes, the size (width and depth) excluding the thickness of the heat sink base section 53, the number of heat dissipation fins 63, the number of heat dissipation fins By changing the size of 63, it is possible to ensure the heat dissipation capability corresponding to each heat generation density.
  • a heat sink 51 capable of coping with various amounts of heat generated according to specifications can be joined to the power module section 11.
  • the power module portion 11 can be shared. be able to. As a result, it is possible to contribute to improvement in productivity of the power semiconductor device 1 (power module section 11).
  • the buffer concave portion 15c remains as a space, so it is also possible to judge the quality of the heat sink caulking process from the state of formation of the space. For example, by irradiating the power semiconductor device 1 with light, measuring the projected area, and estimating the height of the space from the heat sink base portion 53 (see the dimension line), the quality of the heat sink caulking process can be determined. By providing such a measuring instrument, it is possible to automatically determine the quality of the heat sink caulking process.
  • FIG. 34 shows an exploded side view including a partial cross section of the power semiconductor device 1
  • FIG. 35 shows a side view of the power semiconductor device 1 in which the power module section 11 and the heat sink 51 are integrated.
  • the heat sink base portion 53 in the power semiconductor device 1 is composed of a heat dissipation diffusion portion 53a and raised portions 53b.
  • the raised portion 53b is formed so as to protrude from the heat dissipation diffusion portion 53a toward the power module portion 11 side. Since the configuration other than this is the same as the configuration of the power semiconductor device 1 shown in FIG. 1 and the like, the same members are denoted by the same reference numerals, and the description thereof will not be repeated unless necessary.
  • a raised portion 53b is formed so as to protrude from the heat dissipation diffusion portion 53a toward the power module portion 11 side. Thereby, the insulation distance L between the lead frame 23 protruding from the mold resin 29 in the power module section 11 and the heat dissipation diffusion section 53a of the heat sink base section 53 can be secured.
  • the heat sink base portion 53 is manufactured by cutting, forging, extrusion or die casting, and the raised portion 53b is formed at the same time when the heat sink base portion 53 is manufactured. Therefore, the thickness (height) of the raised portion 53b can be freely set, and the required insulation distance L according to the specifications can be easily secured without impairing productivity.
  • the uneven portion 15 formed on the module base 13 has an uneven shape in which the recessed portions 15a and the like are formed on the flat portion 15f, and the uneven portion 55 formed on the heat sink base portion 53 (heat dissipation diffusion portion 53a) has an uneven shape.
  • the convex portion 55a is formed on the flat portion 55f.
  • the module base 13 may have an uneven shape in which a convex portion is formed on a flat portion
  • the heat sink base portion 53 may have an uneven shape in which a concave portion is formed on a flat portion.
  • the concave-convex shape of the heat sink base portion 53 is provided with buffer concave portions.
  • Embodiment 3 a power conversion device to which the power semiconductor device 1 described in the above first or second embodiment is applied will be described.
  • the present disclosure is not limited to a specific power converter, a case where the present disclosure is applied to a three-phase inverter will be described below as a third embodiment.
  • FIG. 37 is a block diagram showing the configuration of a power conversion system to which the power converter according to this embodiment is applied.
  • the power conversion system shown in FIG. 37 includes a power supply 100, a power conversion device 200, and a load 300.
  • the power supply 100 is a DC power supply and supplies DC power to the power converter 200 .
  • the power supply 100 can be configured by various things, for example, it can be configured by a DC system, a solar battery, or a storage battery. Alternatively, it may be composed of a rectifier circuit or an AC/DC converter connected to an AC system. Also, power supply 100 may be configured by a DC/DC converter that converts DC power output from a DC system into predetermined power.
  • the power conversion device 200 is a three-phase inverter connected between the power supply 100 and the load 300 , converts the DC power supplied from the power supply 100 into AC power, and supplies the AC power to the load 300 .
  • the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.
  • the load 300 is a three-phase electric motor driven by AC power supplied from the power conversion device 200 .
  • the load 300 is not limited to a specific application, but is an electric motor mounted on various electrical equipment, such as a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, or an electric motor for an air conditioner.
  • the main conversion circuit 201 includes a switching element and a freewheeling diode (both not shown). By switching the switching element, the DC power supplied from the power supply 100 is converted into AC power and supplied to the load 300 .
  • the main conversion circuit 201 is a two-level three-phase full bridge circuit, with six switching elements and It can consist of six freewheeling diodes in anti-parallel.
  • the power semiconductor device 1 according to Embodiment 1 or Embodiment 2 described above is configured as a semiconductor module 202 in at least one of each switching element and each freewheeling diode of the main converter circuit 201 .
  • Six switching elements are connected in series every two switching elements to form upper and lower arms, and each upper and lower arm forms each phase (U phase, V phase, W phase) of the full bridge circuit.
  • Output terminals of the upper and lower arms, that is, three output terminals of the main conversion circuit 201 are connected to the load 300 .
  • the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element, but the drive circuit may be built in the semiconductor module 202 or may be provided.
  • the drive circuit generates a drive signal for driving the switching element of the main conversion circuit 201 and supplies it to the control electrode of the switching element of the main conversion circuit 201 .
  • a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element.
  • the driving signal When maintaining the switching element in the ON state, the driving signal is a voltage signal (ON signal) equal to or higher than the threshold voltage of the switching element, and when maintaining the switching element in the OFF state, the driving signal is a voltage equal to or less than the threshold voltage of the switching element. signal (off signal).
  • the control circuit 203 controls the switching elements of the main conversion circuit 201 so that the desired power is supplied to the load 300 . Specifically, based on the power to be supplied to the load 300, the time (on time) during which each switching element of the main conversion circuit 201 should be in the ON state is calculated. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the ON time of the switching element according to the voltage to be output. Then, a control command (control signal ). The drive circuit outputs an ON signal or an OFF signal as a drive signal to the control electrode of each switching element according to this control signal.
  • the power semiconductor device 1 described in the first embodiment or the second embodiment is provided in at least one of the switching elements and the free wheel diodes of the main converter circuit 201, and the semiconductor module 202 apply as This can contribute to improving the productivity of the power converter.
  • the present disclosure is not limited to this, and can be applied to various power converters.
  • a two-level power conversion device is used, but a three-level or multi-level power conversion device may be used. Disclosure may apply.
  • the present disclosure can be applied to a DC/DC converter or an AC/DC converter.
  • the power conversion device to which the present disclosure is applied is not limited to the case where the above-described load is an electric motor. It can also be used as a power conditioner such as a photovoltaic power generation system or an electric storage system.
  • the present disclosure is effectively used for a heatsink-integrated power semiconductor device in which a power module and a heatsink are integrated.
  • 1 power semiconductor device 11 power module part, 13 module base, 15 uneven part, 15a, 15b recessed part, 15c buffer recessed part, 15f flat part, 17 uneven part, 17a, 17b convex part, 17f flat part, 21 insulating sheet, 23 Lead frame, 25 solder, 27 chip, 29 mold resin, 51, 51a, 51b, 51c heat sink, 53 heat sink base portion, 53a heat dissipation diffusion portion, 53b raised portion, 55 uneven portion, 55a, 55b convex portion, 55f flat portion, 57 uneven part, 57a, 57b recessed part, 57c buffer recessed part, 57f flat part, 61 fin caulking part, 63 heat radiation fin, 63a, 63b heat radiation fin, 65 load receiving part, 71 press blade, 73 heat sink setting jig.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
PCT/JP2022/001154 2021-01-22 2022-01-14 パワー半導体装置およびその製造方法ならびに電力変換装置 Ceased WO2022158392A1 (ja)

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CN202280009644.XA CN116762170A (zh) 2021-01-22 2022-01-14 功率半导体装置及其制造方法以及电力转换装置
JP2022576650A JP7433480B2 (ja) 2021-01-22 2022-01-14 パワー半導体装置およびその製造方法ならびに電力変換装置
US18/258,037 US12477704B2 (en) 2021-01-22 2022-01-14 Power semiconductor device and method of manufacturing the same, and power conversion device

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